LiTaO3 Wafer 2inchi-8inchi 10x10x0.5 mm 1sp 2sp maka Nkwukọrịta 5G/6G
Teknụzụ paramita
| Aha | LiTaO3 nke ọkwa anya | Ọkwa tebụl ụda LiTaO3 |
| Axial | Mbelata Z + / - 0.2 Celsius | Mkpụcha 36° Y / Mkpụcha 42° Y / Mkpụcha X (+ / - 0.2 Celsius) |
| Dayameta | 76.2mm + / - 0.3mm/ 100±0.2mm | 76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm |
| Datum plane | 22mm + / - 2mm | 22mm +/-2mm 32mm +/-2mm |
| Ọkpụrụkpụ | 500um + /-5mm 1000um + /-5mm | 500um + /-20mm 350um + /-20mm |
| TV | ≤ 10um | ≤ 10um |
| Okpomọkụ Curie | 605 °C + / - 0.7 °C (Ụzọ DTA) | 605 °C + / -3 °C (Ụzọ DTA |
| Ogo elu | Ịchacha akụkụ abụọ | Ịchacha akụkụ abụọ |
| Akụkụ Chamfered | gburugburu nsọtụ | gburugburu nsọtụ |
Njirimara Ndị Dị Mkpa
1. Arụmọrụ eletriki na nke anya
· Electro-Optic Coefficient: r33 ruru elekere iri atọ nke ehihie/V (X-cut), 1.5× karịa LiNbO3, nke na-eme ka modulation electro-optic nke ultra-wideband (>40 GHz bandwidth).
· Nzaghachi Spectral sara mbara: Oke nnyefe 0.4–5.0 μm (ọkpụrụkpụ 8 mm), yana oke mmịpụta ultraviolet dị ala dịka 280 nm, nke dị mma maka laser UV na ngwaọrụ quantum dot.
· Ọnụọgụ Pyroelectric dị ala: dP/dT = 3.5×10⁻⁴ C/(m²·K), na-eme ka a kwụsie ike na ihe mmetụta infrared dị elu.
2. Njirimara okpomọkụ na mekaniki
· Oke Ọkụ: 4.6 W/m·K (X-cut), okpukpu anọ nke quartz, na-akwado -200–500°C thermal cycle.
· Ọnụọgụ Mgbasawanye Okpomọkụ Dị Ala: CTE = 4.1×10⁻⁶/K (25–1000°C), dakọtara na nkwakọ ngwaahịa silicon iji belata nrụgide okpomọkụ.
3. Njikwa na Nhazi Mmezi Njọ
· Njupụta nke paịpụ micropipe: <0.1 cm⁻² (wafers nke sentimita asatọ), njupụta nke mgbanwe <500 cm⁻² (akwadoro site na KOH etching).
· Ogo Elu: Ejiri CMP mee ka ọ dị mma ruo Ra <0.5 nm, na-emezu ihe achọrọ maka ọkwa larịị nke EUV lithography.
Ngwa Ndị Dị Mkpa
| Ngalaba | Ọnọdụ Ngwa | Uru Teknụzụ |
| Nkwukọrịta Anya | 100G/400G DWDM lasers, silicon photonics ngwakọ modulu | Nnyefe spectral sara mbara nke LiTaO3 wafer na obere mfu nduzi ebili mmiri (α <0.1 dB/cm) na-eme ka mgbasa nke C-band dịkwuo mma. |
| Nkwukọrịta 5G/6G | Ihe nzacha SAW (1.8–3.5 GHz), ihe nzacha BAW-SMR | Wafers 42° Y e ji aka bee na-enweta Kt² >15%, na-enye obere mfu ntinye (<1.5 dB) na nnukwu mkpụgharị (>30 dB). |
| Teknụzụ Quantum | Nchọpụta otu-photon, isi mmalite mgbanwe parametric | Ọnụọgụ ọnụọgụgụ gbara ọchịchịrị dị elu (χ(2)=40 pm/V) na ọnụego ọnụọgụgụ dị ala (<100 count/s) na-eme ka ntụkwasị obi nke quantum dịkwuo mma. |
| Nchọpụta Ọrụ | Ihe mmetụta nrụgide dị elu, mgbanwe ugbu a | Mmeghachi omume piezoelectric nke LiTaO3 wafer (g33 >20 mV/m2) na oke okpomọkụ (>400°C) dabara na gburugburu ebe dị oke njọ. |
Ọrụ XKH
1. Ịmepụta Wafer omenala
· Nha na Ịkpụcha: Wafers nke dị sentimita 2–8 nwere X/Y/Z, nke dị sentimita 42°Y, na nke dị sentimita 42°Y (nnwere onwe ± 0.01°).
· Njikwa Doping: Fe, Mg doping site na usoro Czochralski (oke njupụta 10¹⁶–10¹⁹ cm⁻³) iji melite ọnụọgụ electro-optic na nkwụsi ike okpomọkụ.
2. Teknụzụ Usoro Dị Elu
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· Nhazi oge (PPLT): Teknụzụ Smart-Cut maka wafers LTOI, na-enweta nhazi oge ngalaba ±10 nm na mgbanwe ugboro ugboro nke quasi-phase-dakọtara (QPM).
· Njikọta Dị Iche Iche: Wafers mejupụtara LiTaO3 nke dabeere na Si (POI) nwere njikwa ọkpụrụkpụ (300–600 nm) na ike okpomọkụ ruo 8.78 W/m·K maka nzacha SAW ugboro ugboro.
3. Sistemụ Njikwa Ogo
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· Nnwale Ọgwụgwụ ruo na Ọgwụgwụ: Raman spectroscopy (nkwenye ụdị polytype), XRD (kristallinity), AFM (ụdị elu), na nnwale nha anya (Δn <5×10⁻⁵).
4. Nkwado Nnyefe Ngwa Ahịa zuru ụwa ọnụ
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· Ike Mmepụta: Mmepụta kwa ọnwa karịrị wafers 5,000 (inch 8: 70%), yana nnyefe mberede awa 48.
· Netwọk Njem: Mkpuchi na Yuropu, Ugwu Amerịka, na Eshia-Pacific site na ibu ikuku/oké osimiri yana nkwakọ ngwaahịa nke okpomọkụ na-achịkwa.
