50.8mm 2inch GaN na sapphire Epi-layer wafer
Ngwa nke gallium nitride GaN epitaxial mpempe akwụkwọ
Dabere na arụmọrụ nke gallium nitride, gallium nitride epitaxial chips bụ nke dabara adaba maka ike dị elu, ugboro dị elu na ngwa voltaji dị ala.
A na-egosipụta ya na:
1) High bandgap: High bandgap na-eme ka ọkwa voltaji nke ngwaọrụ gallium nitride dị elu ma nwee ike ịmepụta ike dị elu karịa ngwaọrụ gallium arsenide, nke dabara adaba maka ọdụ nkwurịta okwu 5G, radar ndị agha na mpaghara ndị ọzọ;
2) Ntugharị dị elu: na-eguzogide gallium nitride na-agbanwe ike ngwaọrụ eletrọnịkị bụ iwu 3 dị ala karịa nke ngwaọrụ silicon, nke nwere ike belata ọnwụ na-agbanwe agbanwe;
3) Igwe ọkụ na-ekpo ọkụ dị elu: ihe ọkụkụ dị elu nke gallium nitride na-eme ka ọ rụọ ọrụ nke ọma na-ekpo ọkụ ọkụ, nke kwesịrị ekwesị maka mmepụta nke ike dị elu, okpomọkụ na mpaghara ndị ọzọ nke ngwaọrụ;
4) Ike mgbawa eletriki: Ọ bụ ezie na ike mgbaka eletrik nke gallium nitride dị nso na nke silicon nitride, n'ihi usoro semiconductor, ihe na-adịghị mma na ihe ndị ọzọ, nkwụsị voltaji nke ngwaọrụ gallium nitride na-abụkarị ihe dịka 1000V, na voltaji ojiji nchekwa na-adịkarị n'okpuru 650V.
| Ihe | GaN-TCU-C50 | GaN-TCN-C50 | GaN-TCP-C50 |
| Akụkụ | e 50.8mm ± 0.1mm | ||
| Ọkpụrụkpụ | 4.5 ± 0.5 um | 4.5 ± 0.5um | |
| Nhazi | C-ụgbọ elu(0001) ±0.5° | ||
| Ụdị omume | Ụdị N (Edochiri) | Ụdị N (Si-doped) | Ụdị P (Mg-doped) |
| Nguzogide (3O0K) | <0.5Q・cm | <0.05 Q・cm | ~ 10 Q.cm |
| Ntinye uche nke ebu | <5x1017cm-3 | > 1 x1018cm-3 | > 6x1016 cm-3 |
| Mbugharị | ~ 300 cm2/Vs | ~ 200 cm2/Vs | ~ 10 cm2/Vs |
| Njupụta nke Dislocation | Ihe na-erughị 5x108cm-2(nke FWHM nke XRD gbakọrọ) | ||
| Ọdịdị mkpụrụ | GaN na Sapphire (Ọkọlọtọ: Nhọrọ SSP: DSP) | ||
| Mpaghara elu enwere ike iji | > 90% | ||
| ngwugwu | Ejiri ya na klaasị 100 dị ọcha gburugburu ụlọ, na cassettes nke 25pcs ma ọ bụ otu akpa wafer, n'okpuru ikuku nitrogen. | ||
* Enwere ike ịhazi oke ọkpụrụkpụ ọzọ
Eserese zuru ezu
