100mm 4inch GaN na Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

Nkọwa dị mkpirikpi:

Gallium nitride epitaxial mpempe akwụkwọ bụ ihe nnọchianya nke ọgbọ nke atọ nke ihe ndị na-emepụta ihe na-emepụta ihe dị iche iche nke semiconductor epitaxial, nke nwere ihe ndị magburu onwe ya dị ka ọdịiche dị n'obosara, ike nkwụsịtụ dị elu, ikuku okpomọkụ dị elu, nnukwu saturation electron drift ọsọ, ike radieshon na-eguzogide na elu. kemịkalụ kwụsie ike.

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Usoro uto nke GaN blue LED quantum well structure.Usoro nhazi zuru ezu bụ nke a

(1) Akwa okpomọkụ mmiri, sapphire mkpụrụ bụ nke mbụ kpụ ọkụ n'ọnụ ruo 1050 ℃ na hydrogen ikuku, nzube bụ ihicha mkpụrụ n'elu;

(2) Mgbe mkpụrụ osisi na-adaba na 510 ℃, a na-edobe oyi akwa GaN / AlN dị ala nke nwere ọkpụrụkpụ nke 30nm n'elu nke sapphire mkpụrụ;

(3) Okpomọkụ na-ebili na 10 ℃, a na-agbanye gas amonia mmeghachi omume, trimethylgallium na silane, n'otu n'otu na-achịkwa ọnụego mmiri kwekọrọ, na ụdị silicon-doped N-ụdị GaN nke ọkpụrụkpụ 4um toro;

(4) A na-eji gas mmeghachi omume nke trimethyl aluminum na trimethyl gallium mee ihe iji kwadebe silicon-doped N-ụdị A⒑ kọntinent nwere ọkpụrụkpụ nke 0.15um;

(5) 50nm Zn-doped InGaN kwadebere site n'itinye trimethylgallium, trimethylindium, diethylzinc na amonia na okpomọkụ nke 8O0 ℃ na ịchịkwa ọnụego mmiri dị iche iche n'otu n'otu;

(6) A na-abawanye okpomọkụ na 1020 ℃, trimethylaluminum, trimethylgallium na bis (cyclopentadienyl) magnesium na-agbanye iji kwadebe 0.15um Mg doped P-type AlGaN na 0.5um Mg doped P-type G glucose ọbara;

(7) E nwetara ihe nkiri P-ụdị GaN Sibuyan dị elu site na annealing na ikuku nitrogen na 700 ℃;

(8) Etching na P-ụdị G stasis elu iji kpughee N-ụdị G stasis elu;

(9) Evaporation nke Ni/Au efere kọntaktị n'elu p-GANI, evaporation nke △/Al kọntaktị plate n'elu ll-GaN na-emepụta electrodes.

Nkọwapụta

Ihe	GaN-TCU-C100	GaN-TCN-C100
Akụkụ	e 100 mm ± 0.1 mm
Ọkpụrụkpụ	4.5 ± 0.5 um Enwere ike ịhazi ya
Nhazi	C-ụgbọ elu(0001) ±0.5°
Ụdị omume	Ụdị N (Edochiri)	Ụdị N (Si-doped)
Nguzogide (300K)	<0.5Q・cm	<0.05 Q・cm
Ntinye uche nke ebu	<5x10¹⁷cm^-3	> 1 x10¹⁸cm^-3
Mbugharị	~ 300 cm²/Vs	~ 200 cm²/Vs
Njupụta nke Dislocation	Ihe na-erughị 5x10⁸cm^-2(nke FWHM nke XRD gbakọrọ)
Ọdịdị mkpụrụ	GaN na Sapphire (Ọkọlọtọ: Nhọrọ SSP: DSP)
Mpaghara elu enwere ike iji	> 90%
ngwugwu	Ejiri ya na klaasị 100 dị ọcha gburugburu ụlọ, na cassettes nke 25pcs ma ọ bụ otu akpa wafer, n'okpuru ikuku nitrogen.