4inch Semi-mkparị SiC wafers HPSI SiC substrate Prime Production ọkwa

4inch Semi-mkparị SiC wafers HPSI SiC mkpụrụ osisi Prime Production ọkwa egosipụtara onyonyo

Nkọwa dị mkpirikpi:

A na-eji efere polishing okpukpu abụọ nke 4 inch dị ọcha nke ọkara mkpuchi mkpuchi silicon carbide na-ejikarị na nkwukọrịta 5G na mpaghara ndị ọzọ, yana uru nke imeziwanye ọnụọgụ redio, nnabata ultra-ogologo, mgbochi nnyonye anya, ọsọ ọsọ, nnukwu ikike nnyefe ozi na ngwa ndị ọzọ, a na-ahụta ya dị ka ezigbo mkpụrụ maka imepụta ngwaọrụ ike microwave.

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Atụmatụ

Nkọwapụta ngwaahịa

Silicon carbide (SiC) bụ ihe mejupụtara semiconductor ihe mejupụtara carbon na silicon, ọ bụkwa otu n'ime ihe kachasị mma maka ịme okpomọkụ dị elu, ugboro ugboro, ike dị elu na ngwaọrụ voltaji. E jiri ya tụnyere ihe siliki ọdịnala (Si), obosara nke silicon carbide a machibidoro iwu bụ okpukpu atọ nke silicon; conductivity thermal bụ 4-5 ugboro nke silicon; voltaji ndakpọ bụ 8-10 ugboro nke silicon; na electron saturation drift rate is 2-3 times that of silicon, which meet the need of modern industry for high-power, high-voltage, and high-frequency, and it is tumly used to make high-speed, high-frequency, high-power and light-emitting electronic components, na ya ala ngwa ebe na-agụnye smart grid, New ike nkwurịta okwu ugbo ala, fotovoltaic ugbo ala, fotovoltaic ugbo ala silicon, wdg. carbide diodes na MOSFET amalitela itinye n'ọrụ n'ahịa.

Uru nke SiC wafers/Mkpụrụ SiC

Nnukwu okpomọkụ na-eguzogide. The mmachibidoro band obosara nke silicon carbide bụ 2-3 ugboro nke silicon, ya mere electrons na-adịkarịghị na-awụlikwa elu na elu okpomọkụ na ike iguzogide elu arụ ọrụ okpomọkụ, na thermal conductivity nke silicon carbide bụ 4-5 ugboro nke silicon, na-eme ka ọ dịkwuo mfe igbasa okpomọkụ site na ngwaọrụ na ikwe ka elu na-amachi ọrụ okpomọkụ. Njirimara okpomọkụ dị elu nwere ike ịbawanye njupụta ike nke ukwuu, ebe ọ na-ebelata ihe ndị a chọrọ maka usoro ikpo ọkụ ọkụ, na-eme ka ọnụ ala ahụ dịkwuo arọ ma dị ntakịrị.

Nnukwu voltaji na-eguzogide. Silicon carbide's nbibi ike ubi bụ ugboro 10 nke silicon, na-enyere ya aka iguzogide voltaji dị elu, na-eme ka ọ dabara adaba maka ngwaọrụ voltaji dị elu.

Nguzogide dị elu. Silicon carbide nwere okpukpu abụọ nke saturation electron drift rate of silicon, na-akpata na ngwaọrụ ya na usoro mmechi adịghị adị n'ime ihe dị ugbu a na-adọkpụ, nwere ike imeziwanye oge mgbanwe ngwaọrụ, iji nweta miniaturisation ngwaọrụ.

Ọnwụ ike dị ala. Silicon carbide nwere ihe nguzogide dị ala ma e jiri ya tụnyere ihe silicon, nkwụsị nchịkwa dị ala; N'otu oge ahụ, nnukwu bandwit nke silicon carbide na-ebelata nkenke nke ugbu a, ike ọnwụ; Tụkwasị na nke ahụ, ngwaọrụ silicon carbide na usoro nkwụsị adịghị adị na ihe dị ugbu a na-adọkpụ, nkwụsị mgbanwe dị ala.