4inch Semi-mkparị SiC wafers HPSI SiC substrate Prime Production ọkwa

4inch Semi-mkparị SiC wafers HPSI SiC mkpụrụ osisi Prime Production ọkwa egosipụtara onyonyo

Nkọwa dị mkpirikpi:

A na-eji efere polishing okpukpu abụọ nke 4-inch dị ọcha nke ọkara mkpuchi mkpuchi silicon carbide na-ejikarị na nkwukọrịta 5G na mpaghara ndị ọzọ, yana uru dị n'ịkwalite ọnụọgụ redio, njiri anya dị ogologo, mgbochi mgbochi, ọsọ dị elu. , nnukwu nnyefe ozi na ngwa ndị ọzọ, a na-ewerekwa ya dị ka ihe kachasị mma maka ịmepụta ngwaọrụ ike microwave.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Nkọwapụta ngwaahịa

Silicon carbide (SiC) bụ ihe mejupụtara semiconductor ihe mejupụtara carbon na silicon, ọ bụkwa otu n'ime ihe kachasị mma maka ịme okpomọkụ dị elu, ugboro ugboro, ike dị elu na ngwaọrụ voltaji. E jiri ya tụnyere ihe siliki ọdịnala (Si), obosara nke silicon carbide a machibidoro iwu bụ okpukpu atọ nke silicon; conductivity thermal bụ 4-5 ugboro nke silicon; voltaji ndakpọ bụ 8-10 ugboro nke silicon; na ọnụọgụ saturation electron bụ 2-3 ugboro nke silicon, nke na-egbo mkpa nke ụlọ ọrụ ọgbara ọhụrụ maka ike dị elu, voltaji, na elu ugboro ugboro, a na-ejikarị ya eme ngwa ngwa dị elu. ugboro, ike dị elu na ọkụ na-emitting electronic components, na ya mgbada ngwa ngwa gụnyere smart grid, New energy ugbo ala, fotovoltaic ifufe ike, 5G nkwukọrịta, wdg N'ọhịa nke ike ngwaọrụ, silicon carbide diodes na MOSFETs amalitela ịdị. etinyere azụmaahịa.

Uru nke SiC wafers/Mkpụrụ SiC

Nnukwu okpomọkụ na-eguzogide. The mmachibido iwu obosara nke silicon carbide bụ 2-3 ugboro nke silicon, ya mere electrons na-adịkarịghị na-awụlikwa elu na elu okpomọkụ na ike idi elu ọrụ okpomọkụ, na thermal conductivity nke silicon carbide bụ 4-5 ugboro nke silicon, na-eme ka. ọ dị mfe ịgbasa okpomọkụ site na ngwaọrụ ma na-enye ohere maka oke okpomọkụ na-egbochi ọrụ. Njirimara okpomọkụ dị elu nwere ike ịbawanye njupụta ike nke ukwuu, ebe ọ na-ebelata ihe ndị a chọrọ maka usoro ikpo ọkụ ọkụ, na-eme ka ọnụ ala ahụ dịkwuo arọ ma dị ntakịrị.

Nnukwu voltaji na-eguzogide. Silicon carbide's nbibi ike ubi bụ ugboro 10 nke silicon, na-enyere ya aka iguzogide voltaji dị elu, na-eme ka ọ dabara adaba maka ngwaọrụ voltaji dị elu.

Nguzogide dị elu. Silicon carbide nwere okpukpu abụọ nke saturation electron drift rate of silicon, na-akpata na ngwaọrụ ya na usoro mmechi adịghị adị n'ime ihe dị ugbu a na-adọkpụ, nwere ike imeziwanye oge mgbanwe ngwaọrụ, iji nweta miniaturisation ngwaọrụ.

Ọnwụ ike dị ala. Silicon carbide nwere ihe nguzogide dị ala ma e jiri ya tụnyere ihe silicon, nkwụsị nchịkwa dị ala; N'otu oge ahụ, nnukwu bandwit nke silicon carbide na-ebelata nkenke nke ugbu a, ike ọnwụ; Tụkwasị na nke ahụ, ngwaọrụ silicon carbide na usoro nkwụsị adịghị adị na ihe dị ugbu a na-adọkpụ, nkwụsị mgbanwe dị ala.