3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi na-akparị SiC wafers

3-inch 4H ọkara mkpuchi SiC (silicon carbide) mkpụrụ wafers bụ ihe semiconductor na-ejikarị.4H na-egosi nhazi kristal tetrahexahedral.Ọkara mkpuchi pụtara na mkpụrụ ahụ nwere njirimara nguzogide dị elu yana enwere ike kewapụ ya na ọsọ dị ugbu a.

Ndị dị otú ahụ mkpụrụ wafers nwere àgwà ndị a: elu thermal conductivity, obere conduction ọnwụ, magburu onwe elu okpomọkụ nguzogide, na magburu onwe n'ibu na kemịkal kwụsie ike.N'ihi na silicon carbide nwere ohere ike dị ukwuu ma nwee ike iguzogide oke okpomọkụ na ọnọdụ ọkụ eletrik dị elu, a na-eji 4H-SiC ọkara mkpuchi mkpuchi na ngwa eletrik eletrik na ngwaọrụ redio (RF).

Ngwa ndị bụ isi nke wafers 4H-SiC ọkara mkpuchi gụnyere:

1--Power electronics: 4H-SiC wafers nwere ike iji rụpụta ike ịgbanwe ngwaọrụ dị ka MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) na Schottky diodes.Ngwaọrụ ndị a nwere njikwa dị ala na ngbanwe mfu na nnukwu voltaji na ọnọdụ okpomọkụ dị elu ma na-enye arụmọrụ dị elu na ntụkwasị obi.

2--Redio Frequency (RF) Ngwaọrụ: 4H-SiC semi-insulated wafers nwere ike iji mepụta ike dị elu, ihe na-eme ka ike RF dị elu, mgbawa mgbawa, nzacha, na ngwaọrụ ndị ọzọ.Silicon carbide nwere arụmọrụ dị elu ka mma yana nkwụsi ike dị ọkụ n'ihi oke nrịba elektrọn saturation drift ya na njikwa ọkụ dị elu.

3--Optoelectronic ngwaọrụ: 4H-SiC semi-insulated wafers nwere ike iji rụpụta elu-ike laser diodes, UV ìhè nchọpụta na optoelectronic integrated sekit.

N'ihe banyere ntụziaka ahịa, ọchịchọ maka 4H-SiC ọkara mkpuchi mkpuchi na-abawanye na mpaghara na-eto eto nke ike eletriki, RF na optoelectronics.Nke a bụ n'ihi na silicon carbide nwere ọtụtụ ngwa ngwa, gụnyere ike ike, ụgbọ ala eletrik, ume ọhụrụ na nkwukọrịta.N'ọdịnihu, ahịa maka 4H-SiC ọkara mkpuchi mkpuchi na-anọgide na-ekwe nkwa ma na-atụ anya na ọ ga-eji dochie ihe silicon omenala na ngwa dị iche iche.