4H-N/6H-N SiC Wafer Reasearch mmepụta Dummy grade Dia150mm Silicon carbide substrate
6 inch dayameta silicon carbide (SiC) nkọwa mkpụrụ
Ọkwa | MPD efu | Mmepụta | Ọkwa nyocha | Ngụsị akwụkwọ |
Dayameta | 150.0mm ± 0.25mm | |||
Ọkpụrụkpụ | 4H-N | 350um±25um | ||
4H-SI | 500um±25um | |||
Usoro Wafer | Na axis: <0001>±0.5°maka 4H-SI | |||
Flat nke izizi | {10-10}±5.0° | |||
Ogologo Flat nke izizi | 47.5mm ± 2.5mm | |||
Mwepu ihu | 3mm | |||
TTV/Ụta/Warp | ≤15um/≤40um/≤60um | |||
Njupụta Micropipe | ≤1cm-2 | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 |
Resistivity 4H-N 4H-SI | 0.015 ~ 0.028Ω! cm | |||
≥1E5Ω!cm | ||||
Isi ike | Polish Ra ≤1nm CMP Ra≤0.5nm | |||
# Mgbawa site na nnukwu ọkụ ọkụ | Ọ dịghị | 1 kwere, ≤2mm | Ngụkọta ogologo ≤10mm, otu ogologo≤2mm | |
* Efere Hex site na ọkụ dị elu | Mpaghara mkpokọta ≤1% | Mpaghara mkpokọta ≤ 2% | Mpaghara mkpokọta ≤ 5% | |
* Mpaghara polytype site na nnukwu ọkụ ọkụ | Ọ dịghị | Mpaghara mkpokọta ≤ 2% | Mpaghara mkpokọta ≤ 5% | |
*&Akụkụ site n'ìhè siri ike dị elu | Ogologo 3 nchikota ruo dayameta wafer 1 | 5 kpụchara ruo 1 x dayameta wafer ngụkọta ogologo | Ogologo 5scratches ruo dayameta wafer 1 | |
Agba mgbawa | Ọ dịghị | 3 kwere, ≤0.5mm nke ọ bụla | 5 kwere, ≤1mm nke ọ bụla | |
Mmetọ site na nnukwu ọkụ ọkụ | Ọ dịghị
|
Ahịa & Ọrụ Ndị Ahịa
Ịzụ ihe
Ngalaba na-azụta ihe bụ ọrụ ịchịkọta akụrụngwa niile achọrọ iji mepụta ngwaahịa gị. Nchọpụta ngwaahịa na akụrụngwa niile, gụnyere nyocha kemịkalụ na anụ ahụ na-adị mgbe niile.
Ogo
N'oge na mgbe nrụpụta ma ọ bụ na-arụ ọrụ nke ngwaahịa gị, ngalaba njikwa mma na-etinye aka n'ịhụ na ihe niile na ndidi na-ezute ma ọ bụ gafere nkọwapụta gị.
Ọrụ
Anyị ji onwe anyị nganga inwe ndị ọrụ injinia ahịa nwere ahụmịhe karịa afọ 5 na ụlọ ọrụ semiconductor. A zụrụ ha ka ha zaa ajụjụ teknuzu yana ịnye ngụ oge maka mkpa gị.
anyị nọ n'akụkụ gị n'oge ọ bụla ị nwere nsogbu ma dozie ya n'ime awa 10.