2 inch 50.8mm Sapphire Wafer C-Plane M-ụgbọelu R-ụgbọ elu A-ụgbọ elu ọkpụrụkpụ 350um 430um 500um

2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-ụgbọ elu ọkpụrụkpụ 350um 430um 500um Foto egosipụtara

Nkọwa dị mkpirikpi:

Sapphire bụ ihe nchikota pụrụ iche nke anụ ahụ, kemịkalụ na ngwa anya, nke na-eme ka ọ na-eguzogide okpomọkụ dị elu, ujo ọkụ, mmiri na ájá ájá, na ncha.

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Nkọwapụta nghazi dị iche iche

Nhazi	C (0001)-Axis		R (1-102)-Axis		M (10-10) -Akụkụ	A (11-20)-Akụkụ
Ihe onwunwe	C axis nwere ìhè kristal, na axes ndị ọzọ nwere ìhè na-adịghị mma.Plane C dị larịị, ọkacha mma ịkpụ.		Ụgbọ elu R siri ike karịa A.		M ụgbọ elu na-steepụ serrated, adịghị mfe ịkpụ, mfe ịkpụ.	Isi ike nke ụgbọ elu A dị elu nke ukwuu karịa nke ụgbọ elu C, nke a na-egosipụta na nguzogide eyi, nkwụsị ọkọ na isi ike dị elu;Akụkụ A-ụgbọ elu bụ ụgbọ elu zigzag, nke dị mfe ịkpụ;
Ngwa	A na-eji mkpụrụ osisi sapphire C-dabere na-eto eto ihe nkiri edobere III-V na II-VI, dị ka gallium nitride, nke nwere ike mepụta ngwaahịa LED na-acha anụnụ anụnụ, diodes laser, na ngwa nchọpụta infrared. Nke a bụ tumadi n'ihi na usoro nke sapphire kristal ibu n'akụkụ C-axis bụ tozuru okè, na-eri bụ dịtụ ala, anụ ahụ na kemịkalụ Njirimara na-eguzosi ike, na nkà na ụzụ nke epitaxy na C-ụgbọ elu bụ tozuru okè ma kwụsie ike.		R-gbakwasara ala mkpụrụ uto nke dị iche iche echekwabara silicon extrasystals, eji na microelectronics agbakwunyere sekit. Tụkwasị na nke ahụ, a pụkwara ịmepụta sekit agbakwunyere ngwa ngwa na ihe mmetụta nrụgide na usoro mmepụta ihe nkiri nke uto silicon epitaxial.A pụkwara iji ụdị ụdị R mee ihe na mmepụta nke ndu, ihe ndị ọzọ na-emepụta ihe na-emepụta ihe, ndị na-eguzogide elu, gallium arsenide.		A na-ejikarị ya eto ihe nkiri GaN epitaxial na-abụghị polar/ọkara polar iji kwalite arụmọrụ ọkụ.	A-gbadoro anya na mkpụrụ osisi na-emepụta ikike ikike/ọkara, na a na-eji ihe mkpuchi dị elu na teknụzụ microelectronics ngwakọ.Enwere ike ịmepụta superconductors dị elu site na kristal elongated A-base.
Ike nhazi	Ụdị Sapphire Substrate (PSS): N'ụdị nke Uto ma ọ bụ Etching, a na-emepụta nanoscale kpọmkwem ụkpụrụ microstructure mgbe niile na sapphire substrate iji chịkwaa ụdị ọkụ ọkụ nke LED, ma belata ntụpọ dị iche iche n'etiti GaN na-eto eto na sapphire mkpụrụ. , melite ogo epitaxy, ma welie arụmọrụ quantum dị n'ime nke LED ma na-abawanye arụmọrụ nke mmịpụta ọkụ. Na mgbakwunye, sapphire prism, mirror, oghere, oghere, cone na akụkụ ndị ọzọ nwere ike ịhazi dịka ihe ndị ahịa chọrọ.
Nkwupụta ihe onwunwe	Njupụta	Isi ike	ebe mgbaze	Infrared refractive (nke a na-ahụ anya na infrared)	Mbufe (DSP)	Dielectric mgbe niile
Nkwupụta ihe onwunwe	3.98g / cm3	9 (mohs)	2053 ℃	1.762-1.770	≥85%	11.58@300K na C axis (9.4 na A axis)

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Osote: 2 inch 50.8mm ọkpụrụkpụ 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-ụgbọelu R-ụgbọ elu A-ụgbọ elu

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