2 inch 50.8mm Sapphire Wafer C-Plane M-ụgbọelu R-ụgbọ elu A-ụgbọ elu ọkpụrụkpụ 350um 430um 500um
Nkọwapụta nghazi dị iche iche
Nhazi | C (0001)-Axis | R (1-102)-Axis | M (10-10) -Akụkụ | A (11-20)-Akụkụ | ||
Ihe onwunwe | C axis nwere ìhè kristal, na axes ndị ọzọ nwere ìhè na-adịghị mma. Plane C dị larịị, ọkacha mma ịkpụ. | Ụgbọ elu R siri ike karịa A. | M ụgbọ elu na-steepụ serrated, adịghị mfe ịkpụ, mfe ịkpụ. | Isi ike nke ụgbọ elu A dị elu nke ukwuu karịa nke ụgbọ elu C, nke a na-egosipụta na nguzogide eyi, nkwụsị ọkọ na isi ike dị elu; Akụkụ A-ụgbọ elu bụ ụgbọ elu zigzag, nke dị mfe ịkpụ; | ||
Ngwa | A na-eji mkpụrụ osisi sapphire C-dabere na-eto eto ihe nkiri edobere III-V na II-VI, dị ka gallium nitride, nke nwere ike mepụta ngwaahịa LED na-acha anụnụ anụnụ, diodes laser, na ngwa nchọpụta infrared. | R-gbakwasara ala mkpụrụ uto nke dị iche iche echekwabara silicon extrasystals, eji na microelectronics agbakwunyere sekit. | A na-ejikarị ya eto ihe nkiri GaN epitaxial na-abụghị polar/ọkara polar iji kwalite arụmọrụ ọkụ. | A-gbadoro anya na mkpụrụ osisi na-emepụta ikike ikike/ọkara, na a na-eji ihe mkpuchi dị elu na teknụzụ microelectronics ngwakọ. Enwere ike ịmepụta superconductors dị elu site na kristal elongated A-base. | ||
Ike nhazi | Ụdị Sapphire Substrate (PSS): N'ụdị nke Uto ma ọ bụ Etching, a na-emepụta nanoscale kpọmkwem ụkpụrụ microstructure mgbe niile na sapphire substrate iji chịkwaa ụdị ọkụ ọkụ nke LED, ma belata ntụpọ dị iche iche n'etiti GaN na-eto eto na sapphire mkpụrụ. , melite ogo epitaxy, ma welie arụmọrụ quantum dị n'ime nke LED ma na-abawanye arụmọrụ nke mmịpụta ọkụ. Na mgbakwunye, sapphire prism, mirror, oghere, oghere, cone na akụkụ ndị ọzọ nwere ike ịhazi dịka ihe ndị ahịa chọrọ. | |||||
Nkwupụta ihe onwunwe | Njupụta | Isi ike | ebe mgbaze | Infrared refractive (nke a na-ahụ anya na infrared) | Mbufe (DSP) | Dielectric mgbe niile |
3.98g / cm3 | 9 (mohs) | 2053 ℃ | 1.762-1.770 | ≥85% | 11.58@300K na C axis (9.4 na A axis) |