Usoro ọkụ kristal ogologo nke na-eguzogide silikọn carbide na-eto eto 6/8/12inch inch SiC ingot kristal PVT
Ụkpụrụ ọrụ:
1. Ibu ihe eji arụ ọrụ: ntụ ntụ SiC dị ọcha (ma ọ bụ ngọngọ) nke dị n'ala nke griitị graphite (mpaghara okpomọkụ dị elu).
2. Gburugburu ikuku/ọkụ: kpoo oghere ọkụ (<10⁻³ mbar) ma ọ bụ gafere gas ikuku (Ar).
3. Ntinye okpomọkụ dị elu: ikpo ọkụ na-eguzogide ruo 2000 ~ 2500℃, mmebi SiC n'ime Si, Si₂C, SiC₂ na akụkụ gas ndị ọzọ.
4. Nnyefe nke usoro gas: mgbanwe okpomọkụ na-akpali mgbasa nke ihe usoro gas gaa na mpaghara okpomọkụ dị ala (njedebe mkpụrụ).
5. Mmụba kristal: Usoro gas ahụ na-agbanwegharị n'elu kristal mkpụrụ osisi ahụ ma na-eto n'akụkụ ụzọ n'akụkụ C-axis ma ọ bụ A-axis.
Isi paramita:
1. Oke okpomọkụ: 20~50℃/cm (ọkwa uto na njupụta ntụpọ).
2. Nrụgide: 1~100mbar (nrụgide dị ala iji belata ihe ndị na-adịghị ọcha).
3. Ọkwa uto: 0.1~1mm/h (na-emetụta ịdị mma kristal na arụmọrụ mmepụta).
Isi atụmatụ:
(1) Ogo kristal
Njupụta ntụpọ dị ala: njupụta microtubule <1 cm⁻², njupụta dislocation 10³~10⁴ cm⁻² (site na nhazi mkpụrụ na njikwa usoro).
Njikwa ụdị Polycrystalline: nwere ike itolite 4H-SiC (isi iyi), 6H-SiC, 4H-SiC nkezi >90% (mkpa iji chịkwaa oke okpomọkụ na oke stoichiometric nke gas nke ọma).
(2) Arụmọrụ akụrụngwa
Okpomọkụ dị elu: graphite na-ekpo ọkụ okpomọkụ ahụ> 2500℃, ahụ ọkụ na-anabata imewe mkpuchi ọtụtụ oyi akwa (dịka graphite felt + jaket mmiri oyi).
Njikwa otu: Mgbanwe okpomọkụ axial/radial nke ±5 ° C na-eme ka dayameta kristal dị n'otu (nhazi ọkpụrụkpụ substrate nke inch 6 <5%).
Ọkwa nke akpaaka: Sistemụ njikwa PLC agbakwunyere, nlekota oge okpomọkụ, nrụgide na ọnụego uto.
(3) Uru teknụzụ
Ojiji dị elu nke ihe onwunwe: ọnụego mgbanwe ihe onwunwe > 70% (ka mma karịa usoro CVD).
Ndakọrịta nha buru ibu: Emeela mmepụta oke nke sentimita isii, sentimita asatọ nọ n'ọkwa mmepe.
(4) Oriri ike na ọnụ ahịa
Oriri ike nke otu ọkụ bụ 300 ~ 800kW·h, nke na-aza 40% ~ 60% nke ọnụ ahịa mmepụta nke ihe SiC substrate.
Ntinye ego akụrụngwa dị elu (1.5M 3M kwa nkeji), mana ọnụ ahịa ihe eji eme ihe dị ala karịa usoro CVD.
Ngwa ndị bụ isi:
1. Igwe eletriki ike: SiC MOSFET substrate maka inverter ụgbọ ala eletrik na inverter fotovoltaic.
2. Ngwaọrụ Rf: ọdụ ntọala 5G GaN-on-SiC epitaxial substrate (karịsịa 4H-SiC).
3. Ngwaọrụ gburugburu ebe obibi dị oke njọ: ihe mmetụta okpomọkụ dị elu na nrụgide dị elu maka ngwa ike ikuku na nuklia.
Teknụzụ paramita:
| Nkọwapụta | Nkọwa |
| Nha (L × W × H) | 2500 × 2400 × 3456 mm ma ọ bụ hazie ya |
| Dayameta Crucible | 900 mm |
| Nrụgide Ume Kasị Elu | 6 × 10⁻⁴ Pa (mgbe awa 1.5 nke ikuku batara) |
| Ọnụego ntapu mmiri | ≤5 Pa/awa 12 (a na-eme achịcha n'èzí) |
| Dayameta nke Ogwe Ntugharị | 50 mm |
| Ọsọ ntụgharị | 0.5–5 rpm |
| Usoro Ịkpo Ọkụ | Kpoo ọkụ eletriki na-eguzogide ọkụ |
| Okpomọkụ Kachasị Elu | 2500°C |
| Ike Ịkpo Ọkụ | 40 kW × 2 × 20 kW |
| Ntụle Okpomọkụ | Pyrometer infrared agba abụọ |
| Oke okpomọkụ | 900–3000°C |
| Izi ezi nke Okpomọkụ | ±1°C |
| Oke Nrụgide | 1–700 mbar |
| Izi ezi nke njikwa nrụgide | 1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS |
| Ụdị Ọrụ | Ibu ibu ala, nhọrọ nchekwa aka/akpaka |
| Atụmatụ Nhọrọ | Nha okpomọkụ abụọ, ọtụtụ mpaghara ọkụ |
Ọrụ XKH:
XKH na-enye ọrụ usoro niile nke ọkụ SiC PVT, gụnyere nhazi akụrụngwa (nhazi ubi okpomọkụ, njikwa akpaka), mmepe usoro (njikwa ọdịdị kristal, njikarịcha ntụpọ), ọzụzụ teknụzụ (ọrụ na mmezi) na nkwado mgbe erechara ahịa (ndochi akụkụ graphite, nhazi ubi okpomọkụ) iji nyere ndị ahịa aka inweta mmepụta kristal sic dị elu. Anyị na-enyekwa ọrụ nkwalite usoro iji melite mmepụta kristal na arụmọrụ uto mgbe niile, yana oge ndu nke ọnwa 3-6.





