Silicon carbide na-eguzogide ogologo ọkụ kristal na-eto 6/8/12 inch SiC ingot crystal PVT usoro
Ụkpụrụ ọrụ:
1. Ngwunye ihe eji eme ihe: elu dị ọcha SiC ntụ ntụ (ma ọ bụ ngọngọ) etinye na ala nke graphite crucible (mpaghara okpomọkụ dị elu).
2. Vacuum/inert gburugburu: kpochapu ụlọ ọkụ (<10⁻³ mbar) ma ọ bụ nyefee gas inert (Ar).
3. High okpomọkụ sublimation: iguzogide kpo oku 2000 ~ 2500 ℃, SiC decomposition n'ime Si, Si₂C, SiC₂ na ndị ọzọ gas frasi components.
4. Usoro nnyefe gas: gradient okpomọkụ na-ebufe mgbasa nke ihe ọkụkụ gas na mpaghara okpomọkụ dị ala (njedebe mkpụrụ).
5. Uto kristal: Oge gas na-emegharị n'elu nke Mkpụrụ Crystal ma na-etolite na ntụziaka ntụziaka n'akụkụ C-axis ma ọ bụ A-axis.
Igodo akara:
1. Okpomọkụ gradient: 20 ~ 50 ℃ / cm (njikwa uto ọnụego na njupụta ntụpọ).
2. Nrụgide: 1 ~ 100mbar (nrụgide dị ala iji belata ntinye adịghị ọcha).
3.Growth ọnụego: 0.1 ~ 1mm / h (na-emetụta àgwà kristal na mmepụta mmepụta).
Isi atụmatụ:
(1) Ogo kristal
Njupụta dị ala: njupụta microtubule <1 cm⁻², njupụta dislocation 10³ ~ 10⁴ cm⁻² (site na njikarịcha mkpụrụ na njikwa usoro).
Ụdị njikwa polycrystalline: nwere ike itolite 4H-SiC (isi), 6H-SiC, 4H-SiC nha> 90% (mkpa ịchịkwa gradient okpomọkụ na gas na akụkụ stoichiometric nke ọma).
(2) Nrụ ọrụ akụrụngwa
Nkwụsi ike dị elu: okpomoku ahụ na-ekpo ọkụ graphite> 2500 ℃, ahụ ọkụ na-anabata ihe mkpuchi mkpuchi multi-layer (dị ka graphite chere + jaket mmiri jụrụ oyi).
Njikwa n'ịdị n'otu: Mgbanwe okpomọkụ axial / radial nke ± 5 Celsius C na-eme ka nkwụsi ike nke kristal (6-inch substrate ọkpụrụkpụ deviation <5%).
Ogo nke akpaaka: Sistemụ njikwa PLC jikọtara ọnụ, nleba anya nke oge okpomọkụ, nrụgide na ọnụego uto.
(3) Uru teknụzụ
Iji ihe dị elu: ọnụego mgbanwe akụrụngwa> 70% (dị mma karịa usoro CVD).
Nnukwu nha ndakọrịta: 6-inch mass arụpụtala, 8-inch nọ na mmepe ogbo.
(4) Ike oriri na ọnụ ahịa
The ike oriri nke otu ọkụ bụ 300 ~ 800kW ·h, aza maka 40% ~ 60% nke mmepụta ego nke SiC substrate.
Ntinye ego akụrụngwa dị elu (1.5M 3M kwa otu), mana ọnụ ahịa mkpụrụ akụkụ dị ala karịa usoro CVD.
Ngwa isi:
1. Eletrọnịkị ike: SiC MOSFET mkpụrụ maka ihe ntụgharị ụgbọ ala eletrik na onye ntụgharị fotovoltaic.
2. Ngwa Rf: 5G base station GaN-on-SiC epitaxial substrate (tumadi 4H-SiC).
3. Ngwaọrụ gburugburu ebe obibi dị oke egwu: oke okpomọkụ na ihe mmetụta dị elu maka ikuku ikuku na ngwá ọrụ ike nuklia.
Nka nka:
Nkọwapụta | Nkọwa |
Akụkụ (L × W × H) | 2500 × 2400 × 3456 mm ma ọ bụ hazie ya |
Dayameta Crucible | 900 mm |
Nrụgide Vacuum kacha | 6 × 10⁻ Pa (mgbe awa 1.5 gachara) |
Ọnụ ego ntapu | ≤5 Pa / 12h (emechara) |
Dayameta Shaft Rotation | 50 mm |
Ọsọ ntụgharị | 0,5-5 rpm |
Usoro kpo oku | Igwe ọkụ na-eguzogide ọkụ |
Okpomọkụ ọkụ kacha | 2500C |
Ike ikpo ọkụ | 40 kW × 2 × 20 kW |
Nleba okpomọkụ | pyrometer infrared nwere agba abụọ |
Oke okpomọkụ | 900-3000C |
Okpomọkụ ziri ezi | ±1°C |
Oke nrụgide | 1-700 mbar |
Ịdị mma njikwa nrụgide | 1–10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100–700 mbar: ± 0.5% FS |
Ụdị ọrụ | Nbudata ala, nhọrọ nchekwa akwụkwọ ntuziaka/ akpaaka |
Atụmatụ nhọrọ | Ntụ okpomọkụ abụọ, ọtụtụ mpaghara kpo oku |
Ọrụ XKH:
XKH na-enye ọrụ usoro ọrụ dum nke ọkụ ọkụ SiC PVT, gụnyere nhazi ngwá ọrụ (imepụta mpaghara okpomọkụ, njikwa akpaka), mmepe usoro (nchịkwa kristal, njikarịcha ntụpọ), ọzụzụ teknụzụ (ọrụ na mmezi) na nkwado mgbe-ahịa (ngbanwe akụkụ graphite, nhazi ihu igwe ọkụ) iji nyere ndị ahịa aka inweta ihe nrụpụta sic kristal dị elu. Anyị na-enyekwa ọrụ nkwalite usoro ka ọ na-aga n'ihu na-emeziwanye mkpụrụ kristal na nrụpụta uto, yana oge ndu nke ọnwa 3-6.
Eserese zuru ezu


