Kristal otu dị ụkọ n'okike, ọbụlagodi mgbe ha mere, ha na-adịkarị obere—karịsịa na milimita (mm) nha—ma sie ike inweta. Daịamọnd, emeralds, agates, wdg. akọọrọ, anaghị abanye n'ahịa, ma e wezụga ngwa ụlọ ọrụ mmepụta ihe; a na-egosi ọtụtụ n'ime ha na ụlọ ngosi ihe mgbe ochie maka ihe ngosi. Agbanyeghị, ụfọdụ kristal otu nwere uru ụlọ ọrụ mmepụta ihe dị mkpa, dị ka silicon otu kristal na ụlọ ọrụ sekit agbakwunyere, sapphire a na-ejikarị eme ihe na lenses anya, na silicon carbide, nke na-enweta mmụba na semiconductors ọgbọ nke atọ. Ike imepụta kristal otu ndị a n'ụlọ ọrụ mmepụta ihe abụghị naanị na ọ na-anọchite anya ike na teknụzụ ụlọ ọrụ mmepụta ihe na sayensị kamakwa ọ bụ ihe nnọchianya nke akụnụba. Ihe bụ isi achọrọ maka mmepụta kristal otu na ụlọ ọrụ mmepụta ihe bụ nnukwu nha, ebe nke a bụ isi ihe na-ebelata ọnụ ahịa nke ọma. N'okpuru ebe a bụ ụfọdụ kristal otu a na-ahụkarị n'ahịa:
1. Sapphire Single Crystal
Sapphire single kristal na-ezo aka na α-Al₂O₃, nke nwere sistemu kristal hexagonal, ike Mohs nke 9, na ihe ndị sitere na kemịkalụ kwụsiri ike. Ọ naghị agbaze na mmiri acidic ma ọ bụ alkaline, ọ na-eguzogide okpomọkụ dị elu, ọ na-egosipụtakwa nnyefe ọkụ dị mma, ike okpomọkụ, na mkpuchi eletriki.
Ọ bụrụ na ion Ti na Fe dochie ion Al dị na kristal ahụ, kristal ahụ na-acha anụnụ anụnụ ma a na-akpọ ya sapphire. Ọ bụrụ na ion Cr dochie ya, ọ na-adị ka ọbara ọbara ma a na-akpọ ya ruby. Agbanyeghị, sapphire ụlọ ọrụ mmepụta ihe bụ α-Al₂O₃ dị ọcha, enweghị agba ma doo anya, na-enweghị ihe ruru unyi.
Safaịf ụlọ ọrụ na-adịkarị n'ụdị wafers, nke dị 400–700 μm n'obosara na sentimita 4–8 n'obosara. A maara ndị a dị ka wafers ma e jiri kristal ingots bee ha. Egosipụtara n'okpuru ebe a bụ ingot ọhụrụ a dọpụtara ọhụrụ site n'otu ọkụ kristal, nke a na-emebeghị ka ọ maa mma ma ọ bụ bee.
Na 2018, ụlọ ọrụ Jinghui Electronic Company dị na Inner Mongolia mepụtara kristal sapphire kachasị ukwuu n'ụwa nke dị kilogram 450 buru ibu nke ukwuu. Kristal sapphire kachasị ukwuu n'ụwa niile bụ kristal 350 kg nke e mepụtara na Russia. Dịka a hụrụ na foto a, kristal a nwere ọdịdị nkịtị, ọ na-apụta ìhè nke ọma, enweghị mgbawa na ókèala ọka, ọ naghịkwa enwe ọtụtụ afụ.
2. Silikọn Kristal nke Otu
Ugbu a, silicon otu kristal eji eme ihe maka chips sekit agbakwunyere nwere ịdị ọcha nke 99.9999999% ruo 99.999999999% (9–11 nines), na ingot silicon kilogram 420 ga-anọgide na-enwe nhazi zuru oke dị ka diamond. N'okike, ọbụna dayamọnd otu karat (200 mg) adịghị ahụkebe.
Mmepụta zuru ụwa ọnụ nke ingots silicon otu kristal bụ nke ụlọ ọrụ ise dị mkpa: Shin-Etsu nke Japan (28.0%), SUMCO nke Japan (21.9%), GlobalWafers nke Taiwan (15.1%), SK Siltron nke South Korea (11.6%), na Siltronic nke Germany (11.3%). Ọbụna ụlọ ọrụ mmepụta wafer semiconductor kachasị ukwuu na China, NSIG, nwere naanị ihe dị ka 2.3% nke òkè ahịa. Agbanyeghị, dịka onye ọhụrụ, ekwesighi ileghara ikike ya anya. Na 2024, NSIG na-eme atụmatụ itinye ego na ọrụ iji kwalite mmepụta wafer silicon 300 mm maka sekit agbakwunyere, yana atụmatụ itinye ego zuru oke nke ¥13.2 ijeri.
Dịka ihe eji emepụta chips, ingots silicon otu kristal dị ọcha na-agbanwe site na dayameta inch 6 ruo inch 12. Ndị isi na-emepụta chips mba ụwa, dịka TSMC na GlobalFoundries, na-emepụta chips site na wafer silicon inch 12 nke bụ isi ahịa, ebe a na-ewepụ wafer inch 8 nwayọ nwayọ. SMIC, onye isi n'ime obodo, ka na-eji wafer inch 6. Ugbu a, naanị SUMCO nke Japan nwere ike imepụta wafer substrates inch 12 dị ọcha.
3. Gallium Arsenide
Achịcha Gallium arsenide (GaAs) bụ ihe dị mkpa maka semiconductor, nha ha bụkwa ihe dị oke mkpa n'usoro nkwadebe.
Ugbu a, a na-emepụta wafers GaAs n'ogo nke sentimita abụọ, sentimita atọ, sentimita anọ, sentimita isii, sentimita asatọ, na sentimita iri na abụọ. N'ime ndị a, wafers nke sentimita isii bụ otu n'ime nkọwapụta ndị a na-ejikarị eme ihe.
Oke dayameta nke kristal otu nke e ji usoro Horizontal Bridgman (HB) mepụta na-abụkarị sentimita atọ, ebe usoro Liquid-Encapsulated Czochralski (LEC) nwere ike imepụta kristal otu ruo sentimita iri na abụọ na dayameta. Agbanyeghị, uto LEC chọrọ nnukwu ego ngwa ma na-emepụta kristal nwere enweghị otu nha na nnukwu njupụta dislocation. Usoro Vertical Gradient Freeze (VGF) na Vertical Bridgman (VB) nwere ike imepụta kristal otu ruo sentimita asatọ na dayameta, yana nhazi ya na obere njupụta dislocation.
Ụlọ ọrụ atọ bụ isi ndị ọkachamara n'ihe gbasara mmepụta nke wafers GaAs nke nwere inchi anọ na inchi isii: Sumitomo Electric Industries nke Japan, Freiberger Compound Materials nke Germany, na AXT nke US. Ka ọ na-erule 2015, substrates nke dị inchi isii eburula ihe karịrị 90% nke òkè ahịa.
Na 2019, Freiberger, Sumitomo, na Beijing Tongmei bụ ndị chịrị ahịa GaAs substrate zuru ụwa ọnụ, ha nwere òkè ahịa nke 28%, 21%, na 13% n'otu n'otu. Dịka atụmatụ ụlọ ọrụ ndụmọdụ Yole si kwuo, ahịa zuru ụwa ọnụ nke GaAs substrates (nke a gbanwere gaa na nha nhata inch 2) ruru ihe dị ka nde iberibe 20 na 2019 ma a na-atụ anya na ọ ga-agafe nde iberibe 35 na 2025. Ahịa GaAs substrate zuru ụwa ọnụ ruru ihe dị ka nde dọla 200 na 2019 ma a na-atụ anya na ọ ga-eru nde dọla 348 ka ọ na-erule 2025, yana ọnụego uto kwa afọ (CAGR) nke 9.67% site na 2019 ruo 2025.
4. Silicon Carbide Single Crystal
Ugbu a, ahịa ahụ nwere ike ịkwado uto nke kristal silicon carbide (SiC) nke dị sentimita 2 na sentimita 3 n'obosara. Ọtụtụ ụlọ ọrụ akọpụtala mmụba nke kristal SiC nke dị sentimita 4 n'obosara, nke na-egosi na China enwetala ọkwa klaasị ụwa na teknụzụ uto kristal SiC. Agbanyeghị, enwere nnukwu oghere tupu azụmaahịa.
N'ozuzu, ihe ndị e ji usoro mmiri mmiri kụọ na SiC pere mpe, ọkpụrụkpụ ha dịkwa na sentimita. Nke a bụkwa ihe kpatara ọnụ ahịa dị elu nke wafer SiC.
XKH bụ ọkachamara na R&D na nhazi ahaziri iche nke ihe semiconductor dị mkpa, gụnyere sapphire, silicon carbide (SiC), silicon wafers, na seramiiki, na-ekpuchi usoro uru zuru oke site na uto kristal ruo na nhazi ziri ezi. Site na iji ikike ụlọ ọrụ agbakwunyere, anyị na-enye wafer sapphire dị elu, ihe ndị e ji silicon carbide mee, na wafer silicon dị ọcha nke ukwuu, nke a na-akwado site na ngwọta ahaziri ahazi dịka ịkpụcha omenala, mkpuchi elu, na imepụta geometry dị mgbagwoju anya iji gboo mkpa gburugburu ebe obibi dị oke mkpa na sistemụ laser, mmepụta semiconductor, na ngwa ike mmeghari ohuru.
N'ịgbaso ụkpụrụ dị mma, ngwaahịa anyị nwere nkenke ọkwa micron, nkwụsi ike okpomọkụ >1500°C, na nguzogide nchara dị elu, na-eme ka a pụrụ ịtụkwasị obi n'ọnọdụ ọrụ siri ike. Na mgbakwunye, anyị na-enye quartz substrates, ihe metal/non-metallic, na ihe ndị ọzọ dị na semiconductor, na-eme ka mgbanwe dị mfe site na prototyping gaa na mmepụta buru ibu maka ndị ahịa n'ofe ụlọ ọrụ.
Oge ozi: Ọgọst-29-2025