Sapphire bụ otu kristal nke alumina, bụ nke tripartite kristal usoro, hexagonal Ọdịdị, ya crystal Ọdịdị bụ mejupụtara atọ oxygen atọm abụọ aluminom atọ na covalent njikọ ụdị, haziri nke ọma, na ike bonding yinye na lattice ume, mgbe ya. kristal n'ime ọ fọrọ nke nta ka ọ dịghị adịghị ọcha ma ọ bụ ntụpọ, ya mere o nwere magburu onwe eletriki mkpuchi, nghọta, ezi thermal conductivity na elu rigidity àgwà. A na-eji ya eme ihe dị ka windo anya na ihe ndị na-arụ ọrụ dị elu. Otú ọ dị, usoro ihe omimi nke sapphire dị mgbagwoju anya na e nwere anisotropy, na mmetụta na ihe ndị kwekọrọ na anụ ahụ dịkwa nnọọ iche maka nhazi na iji ntụziaka kristal dị iche iche, ya mere ojiji dị iche iche. N'ozuzu, sapphire substrates dị na C, R, A na M ntụziaka ụgbọ elu.
Ngwa nkeC-ụgbọ elu sapphire wafer
Gallium nitride (GaN) dị ka obosara bandgap ọgbọ nke atọ semiconductor, nwere obosara kpọmkwem band gap, atomiki njikọ siri ike, elu thermal conductivity, ezigbo kemịkalụ kwụsie ike (fọrọ nke nta ka ọ dịghị corroded site ọ bụla acid) na ike mgbochi irradiation ike, na nwere nnukwu atụmanya na. ngwa nke optoelectronics, elu okpomọkụ na ike ngwaọrụ na elu ugboro ngwa ngwa ngwa ngwa. Otú ọ dị, n'ihi nnukwu agbaze nke GaN, ọ na-esiri ike ịnweta nnukwu ihe otu kristal, ya mere, ụzọ a na-emekarị bụ ịmepụta heteroepitaxies na-eto eto na ihe ndị ọzọ, nke nwere ihe dị elu maka ihe ndị na-emepụta ihe.
Tụnyere nasapphire mkpụrụna ihu kristal ndị ọzọ, ọnụ ọgụgụ na-adaghị adaba mgbe niile n'etiti ụgbọ elu C-ụgbọ elu (<0001> nghazi) sapphire wafer na ihe nkiri ndị a na-edobere n'ìgwè Ⅲ-Ⅴ na Ⅱ-Ⅵ (dị ka GaN) dịtụ ntakịrị, na lattice na-adaba adaba mgbe niile. ọnụego n'etiti abụọ na nkeIhe nkiri AlNnke enwere ike iji dị ka oyi akwa mkpuchi dị ntakịrị, ọ na-emezukwa ihe achọrọ nke nguzogide okpomọkụ dị elu na usoro GaN crystallization. Ya mere, ọ bụ ihe a na-ahụkarị maka uto GaN, nke a pụrụ iji mee ka ndị na-acha ọcha / acha anụnụ anụnụ / green leds, laser diodes, infrared detectors na na.
Ọ bara uru ịkọ na ihe nkiri GaN toro na sapphire C-plane na-etolite n'akụkụ axis polar ya, ya bụ, ntụziaka nke C-axis, nke na-abụghị nanị usoro uto tozuru okè na usoro epitaxy, ọnụ ala dị ala, anụ ahụ kwụsiri ike. na chemical Njirimara, ma mma nhazi arụmọrụ. Atọm nke sapphire nke C-oriented na-ejikọta na nhazi O-al-al-o-al-O, ebe kristal M-oriented na A-oriented sapphire na-ejikọta na al-O-al-O. N'ihi na Al-Al nwere obere njikọ ike yana njikọ na-esighị ike karịa Al-O, ma e jiri ya tụnyere kristal sapphire M-oriented na A-oriented, nhazi nke C-sapphire bụ tumadi imeghe igodo Al-Al, nke dị mfe ịhazi. , ma nwee ike nweta ogo elu dị elu, wee nweta mma gallium nitride epitaxial quality, nke nwere ike imeziwanye àgwà nke ultra-high lightness white/blue LED. N'aka nke ọzọ, ihe nkiri ndị toro n'akụkụ C-axis nwere mmetụta na-enweghị isi na piezoelectric polarization, na-eme ka ọkụ eletrik dị n'ime ụlọ dị n'ime ihe nkiri ahụ (na-arụ ọrụ oyi akwa quantum Wells), nke na-ebelata nke ukwuu arụmọrụ nke ihe nkiri GaN.
N'ihi arụmọrụ ya zuru oke, ọkachasị nnyefe dị mma, otu kristal sapphire nwere ike ịkwalite mmetụta ntinye infrared, wee bụrụ ihe dị mma n'etiti ihe windo infrared, nke ejirila na akụrụngwa fotoelectric agha. Ebe Sapphire bụ ụgbọ elu polar (C ụgbọelu) n'ụzọ nkịtị nke ihu, bụ elu na-abụghị polar. N'ozuzu, àgwà nke kristal sapphire A-oriented dị mma karịa nke kristal C-oriented, na-enwe obere nkwụsịtụ, obere ihe nhazi Mosaic na nhazi kristal zuru oke, ya mere ọ nwere ọrụ nnyefe ọkụ ka mma. N'otu oge ahụ, n'ihi na Al-O-Al-O atomic bonding mode na ụgbọ elu a, ike ike na iyi nguzogide nke A-gbakwasara ala sapphire bụ budata elu karịa nke C-gbakwasara n'elu sapphire. Ya mere, a na-ejikarị ibe A-directional dị ka ihe windo; Ke adianade do, A sapphire nwekwara edo dielectric mgbe niile na elu mkpuchi ihe Njirimara, n'ihi ya, ọ nwere ike tinye n'ọrụ na ngwakọ microelectronics technology, kamakwa maka uto nke ikenyeneke eduzi conductors, dị ka ojiji nke TlBaCaCuO (TbBaCaCuO), Tl-2212, uto. Ihe nkiri dị iche iche na-eme ihe nkiri epitaxial superconducting na cerium oxide (CeO2) sapphire composite substrate. Otú ọ dị, nakwa n'ihi nnukwu njikọ ike nke Al-O, ọ bụ ihe siri ike hazie.
Ngwa nkeR/M ụgbọ elu sapphire wafer
Ụgbọ elu R bụ ihe na-abụghị polar elu nke sapphire, ya mere mgbanwe na ọnọdụ R-plane na ngwaọrụ sapphire na-enye ya dị iche iche n'ibu, thermal, electric, and optical properties. N'ozuzu, R-surface sapphire substrate ka ahọrọ maka heteroepitaxial deposition nke silicon, tumadi maka semiconductor, ngwa ndakwa nri na microelectronics Integrated circuit ngwa, na mmepụta nke ndu, ndị ọzọ superconducting components, elu nguzogide resistors, gallium arsenide nwekwara ike iji R- pịnye mkpụrụ osisi ibu. Ka ọ dị ugbu a, na-ewu ewu nke smart phones na mbadamba kọmputa usoro, R-face sapphire substrate dochie dị ugbu a compound SAW ngwaọrụ eji maka smart phones na mbadamba kọmputa, na-enye a substrate maka ngwaọrụ ndị nwere ike melite arụmọrụ.
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Oge nzipu: Jul-16-2024