Safaịre bụ otu kristal nke alumina, nke bụ nke usoro kristal tripartite, nhazi hexagonal, nhazi kristal ya nwere atọm oxygen na atọm aluminom abụọ n'ụdị njikọ covalent, nke edobere nke ọma, nwere agbụ njikọ siri ike na ike lattice, ebe ime kristal ya fọrọ nke nta ka ọ ghara ịdị ọcha ma ọ bụ ntụpọ, yabụ o nwere mkpuchi eletriki dị mma, nghọta, ezigbo njikwa okpomọkụ na njirimara siri ike dị elu. A na-eji ya eme ihe nke ukwuu dị ka windo anya na ihe substrate arụmọrụ dị elu. Agbanyeghị, nhazi molekul nke safaịre dị mgbagwoju anya ma enwere anisotropy, mmetụta na ihe onwunwe anụ ahụ kwekọrọ dịkwa iche maka nhazi na ojiji nke ntụziaka kristal dị iche iche, yabụ ojiji dịkwa iche. N'ozuzu, substrates safaịre dị na ntụziaka ụgbọelu C, R, A na M.
Ngwa nkeWafer sapphire C-plane
Gallium nitride (GaN) dị ka semiconductor ọgbọ nke atọ nke sara mbara, nwere oghere eriri kpọmkwem sara mbara, njikọ atọm siri ike, njikwa okpomọkụ dị elu, ezigbo nkwụsi ike kemịkalụ (ihe fọrọ nke nta ka ọ bụrụ na ọ dịghị acid ọ bụla emebi) yana ikike mgbochi radieshọn siri ike, ma nwee nnukwu atụmanya n'iji optoelectronics, ngwaọrụ okpomọkụ dị elu na ike na ngwaọrụ microwave ugboro ugboro. Agbanyeghị, n'ihi oke agbaze nke GaN, ọ na-esiri ike inweta nnukwu ihe kristal otu nha, yabụ ụzọ a na-ahụkarị bụ ime uto heteroepitaxy na substrates ndị ọzọ, nke nwere ihe achọrọ dị elu maka ihe substrate.
Ma e jiri ya tụnyereihe mejupụtara sapphirena ihu kristal ndị ọzọ, ọnụego enweghị nkwekọ na lattice n'etiti C-plane (<0001> nhazi) sapphire wafer na ihe nkiri ndị e tinyere n'ime otu Ⅲ-Ⅴ na Ⅱ-Ⅵ (dịka GaN) dị obere, ọnụego enweghị nkwekọ na lattice n'etiti abụọ ahụ naIhe nkiri AlNnke enwere ike iji dị ka ihe nchekwa dị obere karịa, ọ na-emezukwa ihe achọrọ maka iguzogide okpomọkụ dị elu na usoro kristal GaN. Ya mere, ọ bụ ihe a na-ejikarị eme ihe maka uto GaN, nke enwere ike iji mee led ọcha/acha anụnụ anụnụ/akwụkwọ ndụ akwụkwọ ndụ, diode laser, ihe nchọpụta infrared na ndị ọzọ.
Ọ dị mkpa ikwu na ihe nkiri GaN a na-akụ n'elu ihe mkpuchi sapphire C-plane na-eto n'akụkụ oghere polar ya, ya bụ, ntụziaka nke axis C, nke abụghị naanị usoro uto tozuru okè na usoro epitaxy, ọnụ ahịa dị ala, njirimara anụ ahụ na kemịkalụ kwụsiri ike, kamakwa arụmọrụ nhazi ka mma. A na-ejikọta atọm nke wafer sapphire C-oriented na nhazi O-al-o-al-O, ebe kristal sapphire M-oriented na A-oriented na al-O-al-O. N'ihi na Al-Al nwere ike njikọ dị ala na njikọ adịghị ike karịa Al-O, ma e jiri ya tụnyere kristal sapphire M-oriented na A-oriented, Nhazi nke C-sapphire bụ isi imepe igodo Al-Al, nke dị mfe nhazi, ma nwee ike nweta mma elu dị elu, wee nweta mma epitaxial gallium nitride ka mma, nke nwere ike imeziwanye mma nke LED ọcha/acha anụnụ anụnụ na-enwu enwu nke ukwuu. N'aka nke ọzọ, ihe nkiri ndị a na-akọ n'akụkụ C-axis nwere mmetụta polarization na-akpaghị aka na nke piezoelectric, na-eme ka ọkụ eletrik dị n'ime ihe nkiri ahụ sie ike (quantum Wells nke na-arụ ọrụ n'ime oyi akwa), nke na-ebelata arụmọrụ na-enwu enwu nke ihe nkiri GaN nke ukwuu.
N'ihi arụmọrụ ya zuru oke nke ọma, ọkachasị nnyefe dị mma, kristal sapphire otu nwere ike ime ka mmetụta ntinye infrared dịkwuo mma, wee bụrụ ihe zuru oke maka windo etiti infrared, nke ejirila mee ihe nke ukwuu na ngwa fotoelektrik agha. Ebe sapphire bụ ụgbọelu polar (C) n'akụkụ ihu nkịtị, ọ bụ elu na-abụghị polar. N'ozuzu, ịdị mma nke kristal sapphire nke A-oriented ka mma karịa nke kristal C-oriented, yana obere mgbanwe, obere nhazi Mosaic na nhazi kristal zuru oke, yabụ ọ nwere arụmọrụ nnyefe ìhè ka mma. N'otu oge ahụ, n'ihi ụdị njikọ atọm Al-O-Al-O na plane a, ike na nguzogide iyi nke sapphire nke A-oriented dị elu nke ukwuu karịa nke sapphire nke C-oriented. Ya mere, a na-ejikarị chips A-directional eme ihe dị ka ihe windo; Tinyere nke ahụ, sapphire A nwekwara ihe ndị na-agbanwe agbanwe na-agbanwe agbanwe ma na-enye mkpuchi dị elu, yabụ enwere ike itinye ya na teknụzụ microelectronics ngwakọ, kamakwa maka uto nke ndị na-eduzi ihe dị mma, dịka iji TlBaCaCuO (TbBaCaCuO), Tl-2212, uto nke ihe nkiri epitaxial superconducting dị iche iche na cerium oxide (CeO2) sapphire composite substrate. Agbanyeghị, n'ihi ike njikọ dị ukwuu nke Al-O, ọ na-esiri ike karị ịhazi.
Ojiji nkeR/M plane sapphire wafer
R-plane bụ elu sapphire na-abụghị polar, yabụ mgbanwe dị na ọnọdụ R-plane na ngwaọrụ sapphire na-enye ya ihe dị iche iche dị na igwe, okpomọkụ, eletriki, na ihe anya. N'ozuzu, a na-ahọrọ R-surface sapphire substrate maka heteroepitaxial deposition nke silicon, ọkachasị maka semiconductor, microwave na microelectronics integrated circuit applications, na mmepụta nke lead, ihe ndị ọzọ na-eduzi superconducting, ndị na-eguzogide ike dị elu, enwere ike iji gallium arsenide maka uto ụdị R. Ugbu a, site na ewu ewu nke ekwentị smart na sistemụ kọmputa mbadamba, R-face sapphire substrate edochila ngwaọrụ SAW compound dị ugbu a eji maka ekwentị smart na kọmputa mbadamba, na-enye substrate maka ngwaọrụ ndị nwere ike imeziwanye arụmọrụ.
Ọ bụrụ na enwere mmebi iwu, hichapụ kọntaktị
Oge ozi: Julaị-16-2024