Sapphire bụ otu kristal nke alumina, bụ nke tripartite crystal usoro, hexagonal Ọdịdị, ya crystal Ọdịdị na-emi esịnede atọ oxygen atọm na abụọ aluminum atọm na covalent nkekọ ụdị, ndokwa nnọọ anya, na ike bonding yinye na lattice ume, mgbe ya crystal ime ọ fọrọ nke nta ka ọ dịghị adịghị ma ọ bụ ntụpọ, n'ihi ya, o nwere magburu onwe eletriki mkpuchi ihe, ezi rigidity àgwà. A na-ejikarị ya dị ka windo anya na ihe ndị na-arụ ọrụ dị elu. Otú ọ dị, usoro ihe omimi nke sapphire dị mgbagwoju anya na e nwere anisotropy, na mmetụta na ihe ndị kwekọrọ na anụ ahụ dịkwa nnọọ iche maka nhazi na iji ntụziaka kristal dị iche iche, ya mere ojiji dị iche iche. N'ozuzu, sapphire substrates dị na C, R, A na M ntụziaka ụgbọ elu.
Ngwa nkeC-ụgbọ elu sapphire wafer
Gallium nitride (GaN) dị ka obosara bandgap ọgbọ nke atọ semiconductor, nwere obosara kpọmkwem band gap, ike atomiki bond, elu thermal conductivity, ezigbo kemịkalụ kwụsie ike (fọrọ nke nta ka ọ bụghị corroded ọ bụla acid) na ike mgbochi irradiation ike, na nwere nnukwu atụmanya na ngwa nke optoelectronics, elu okpomọkụ na ike ngwaọrụ na elu ugboro ngwa ndakwa nri ngwaọrụ. Otú ọ dị, n'ihi nnukwu agbaze nke GaN, ọ na-esiri ike ịnweta nnukwu ihe otu kristal, ya mere, ụzọ a na-emekarị bụ ịmepụta heteroepitaxies na-eto eto na ihe ndị ọzọ, nke nwere ihe dị elu maka ihe ndị na-emepụta ihe.
Tụnyere nasapphire mkpụrụna ihu kristal ndị ọzọ, ọnụ ọgụgụ na-adaghị adaba mgbe niile n'etiti C-plane (<0001> orientation) sapphire wafer na ihe nkiri ndị edobere n'ìgwè Ⅲ-Ⅴ na Ⅱ-Ⅵ (dị ka GaN) dị ntakịrị, yana ọnụ ọgụgụ na-adaghị adaba mgbe niile n'etiti ha abụọ naIhe nkiri AlNnke enwere ike iji dị ka oyi akwa mkpuchi dị ntakịrị, ọ na-emezukwa ihe achọrọ nke nguzogide okpomọkụ dị elu na usoro GaN crystallization. Ya mere, ọ bụ ihe a na-ahụkarị maka uto GaN, nke a pụrụ iji mee ka ndị na-acha ọcha / acha anụnụ anụnụ / green leds, laser diodes, infrared detectors na na.
Ọ bara uru ịkọwa na ihe nkiri GaN toro na sapphire C-plane na-etolite n'akụkụ axis polar ya, ya bụ, ntụziaka nke C-axis, nke na-abụghị nanị usoro uto tozuru okè na usoro epitaxy, ọnụ ala dị ala, ihe onwunwe anụ ahụ na nke kemịkal kwụsiri ike, kamakwa ịrụ ọrụ nhazi ka mma. Atọm nke sapphire nke C-oriented na-ejikọta na nhazi O-al-al-o-al-O, ebe kristal M-oriented na A-oriented sapphire na-ejikọta na al-O-al-O. N'ihi na Al-Al nwere ala bonding ume na ike ike bonding karịa Al-O, ma e jiri ya tụnyere M-oriented na A-oriented sapphire kristal, The nhazi nke C-sapphire bụ tumadi imeghe Al-Al igodo, nke dị mfe hazie, na ike nweta elu elu àgwà, na mgbe ahụ nweta mma gallium nitride epitaxial àgwà gallium nitride epitaxial mma, nke nwere ike imeziwanye-high LED na-egbuke egbuke. N'aka nke ọzọ, ihe nkiri ndị toro n'akụkụ C-axis nwere mmetụta na-enweghị isi na piezoelectric polarization, na-eme ka ọkụ eletrik dị n'ime ụlọ dị n'ime ihe nkiri ahụ (na-arụ ọrụ oyi akwa quantum Wells), nke na-ebelata nke ukwuu arụmọrụ nke ihe nkiri GaN.
N'ihi arụmọrụ ya zuru oke, ọkachasị nnyefe dị mma, otu kristal sapphire nwere ike ịkwalite mmetụta ntinye infrared, wee bụrụ ihe dị mma n'etiti ihe windo infrared, nke ejirila na akụrụngwa fotoelectric agha. Ebe Sapphire bụ ụgbọ elu polar (C ụgbọelu) n'ụzọ nkịtị nke ihu, bụ elu na-abụghị polar. N'ozuzu, àgwà nke kristal sapphire A-oriented dị mma karịa nke kristal C-oriented, na-enwe obere nkwụsịtụ, obere ihe nhazi Mosaic na nhazi kristal zuru oke, ya mere ọ nwere ọrụ nnyefe ọkụ ka mma. N'otu oge ahụ, n'ihi na Al-O-Al-O atomic bonding mode na ụgbọ elu a, ike ike na iyi nguzogide nke A-gbakwasara ala sapphire bụ budata elu karịa nke C-gbakwasara n'elu sapphire. Ya mere, A-directional ibe na-akasị eji dị ka window ihe; Ke adianade do, A sapphire nwekwara edo dielectric mgbe niile na elu mkpuchi ihe Njirimara, ya mere, ọ nwere ike tinye n'ọrụ na ngwakọ microelectronics technology, kamakwa maka uto nke ikenyeneke eduzi conductors, dị ka ojiji nke TlBaCaCuO (TbBaCaCuO), Tl-2212, uto nke heterogeneous epitaxial superconducting oxide na subsiterium. Otú ọ dị, nakwa n'ihi nnukwu njikọ ike nke Al-O, ọ bụ ihe siri ike hazie.
Ngwa nkeR/M ụgbọ elu sapphire wafer
Ụgbọ elu R bụ ihe na-abụghị polar elu nke sapphire, ya mere mgbanwe na ọnọdụ R-plane na ngwaọrụ sapphire na-enye ya dị iche iche n'ibu, thermal, electric, and optical properties. N'ozuzu, R-surface sapphire substrate ka ahọrọ maka heteroepitaxial deposition nke silicon, tumadi maka semiconductor, ngwa ndakwa nri na microelectronics integrated circuit ngwa, na mmepụta nke ndu, ndị ọzọ superconducting components, elu nguzogide resistors, gallium arsenide nwekwara ike-eji maka R-ụdị mkpụrụ ibu. Ka ọ dị ugbu a, na-ewu ewu nke smart phones na mbadamba kọmputa usoro, R-face sapphire substrate dochie dị ugbu a compound SAW ngwaọrụ eji maka smart phones na mbadamba kọmputa, na-enye a substrate maka ngwaọrụ ndị nwere ike melite arụmọrụ.
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Oge nzipu: Jul-16-2024