Usoro CVD maka imepụta akụrụngwa SiC dị ọcha na ọkụ ọkụ silicon carbide na 1600 ℃

Nkọwa dị mkpirikpi:

Silicon carbide (SiC) ọkụ ọkụ (CVD). Ọ na-eji teknụzụ Vapor Deposition (CVD) na teknụzụ gaseous silicon isi mmalite (dịka SiH₄, SiCl₄) na ọnọdụ okpomọkụ dị elu nke ha na-emeghachi omume na isi mmalite carbon (dịka C₃H₈, CH₄). Ngwa dị mkpa maka itolite kristal silicon carbide dị ọcha na mkpụrụ (graphite ma ọ bụ mkpụrụ SiC). A na-eji teknụzụ eme ihe maka ịkwadebe mkpụrụ osisi SiC otu kristal (4H / 6H-SiC), nke bụ akụrụngwa usoro maka nrụpụta ike semiconductor (dị ka MOSFET, SBD).

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Ụkpụrụ ọrụ:

1. Precursor ọkọnọ. A na-agwakọta isi iyi silicon (dịka ọmụmaatụ SiH₄) na isi iyi carbon (dịka ọmụmaatụ C₃H₈) gas na oke nha ma tinye ya n'ime ụlọ mmeghachi omume.

2. Igwe ọkụ dị elu: N'ebe okpomọkụ dị elu nke 1500 ~ 2300 ℃, ikuku gas na-emepụta Si na C na-arụ ọrụ atọm.

3. Mmeghachi omume n'elu: Si na C atọm na-edebe n'elu mkpụrụ n'elu na-etolite a SiC crystal oyi akwa.

4. Ụtọ kristal: Site na njikwa nke gradient okpomọkụ, ikuku gas na nrụgide, iji nweta ọganihu ntụziaka n'akụkụ c axis ma ọ bụ axis.

Igodo akara:

Okpomọkụ: 1600 ~ 2200 ℃ (> 2000 ℃ maka 4H-SiC)

· Nrụgide: 50 ~ 200mbar (obere nrụgide iji belata gas nucleation)

Ogo gas: Si / C≈1.0 ~ 1.2 (iji zere ntụpọ Si ma ọ bụ C)

Isi atụmatụ:

(1) Ogo kristal
Ngosi obere ntụpọ: njupụta microtubule <0.5cm ⁻², njupụta njupụta <10⁴ cm⁻².

Ụdị njikwa polycrystalline: nwere ike itolite 4H-SiC (isi), 6H-SiC, 3C-SiC na ụdị kristal ndị ọzọ.

(2) Nrụ ọrụ akụrụngwa
Elu okpomọkụ kwụsie ike: graphite induction kpo oku ma ọ bụ iguzogide kpo oku, okpomọkụ> 2300 ℃.

Njikwa Uniformity: mgbanwe okpomọkụ ± 5 ℃, ọnụego uto 10 ~ 50μm / h.

Sistemụ gas: High precision mass flowmeter (MFC), ịdị ọcha gas ≥99.999%.

(3) Uru teknụzụ
Ịdị ọcha dị elu: Ntinye uche adịghị ọcha n'azụ <10¹⁶ cm⁻³ (N, B, wdg).

Nnukwu nha: Nkwado 6 "/ 8" SiC mkpụrụ mkpụrụ.

(4) Ike oriri na ọnụ ahịa
Eriri ike dị elu (200 ~ 500kW · h kwa ọkụ), na-aza 30% ~ 50% nke mmepụta ego nke mkpụrụ SiC.

Ngwa isi:

1. Ihe ntinye ike nke semiconductor: SiC MOSFETs maka ịmepụta ụgbọ ala eletrik na fotovoltaic inverters.

2. Rf ngwaọrụ: 5G base station GaN-on-SiC epitaxial substrate.

Ngwaọrụ gburugburu 3.Extreme: ihe mmetụta okpomọkụ dị elu maka ikuku ikuku na ike nuklia.

Nkọwa nka nka:

Nkọwapụta	Nkọwa
Akụkụ (L × W × H)	4000 x 3400 x 4300 mm ma ọ bụ hazie
Dayameta ụlọ ọkụ	1100mm
Ikike ibu	50kg
Oke oghere ogo	10-2Pa (2h mgbe mgbapụta molekụla amalite)
Ọnụego ịrị elu nke ụlọ	≤10Pa/h (mgbe calcination gasịrị)
Lower ọkụ cover ebuli ọrịa strok	1500mm
Usoro kpo oku	Induction kpo oku
Okpomọkụ kachasị na ọkụ ọkụ	2400°C
Ọkụ ọkụ ọkụ	2X40kW
Nleta okpomọkụ	Ntụ okpomọkụ infrared agba abụọ
Oke okpomọkụ	900 ~ 3000 ℃
Izi ezi njikwa okpomọkụ	±1°C
Oke nrụgide njikwa	1 ~ 700mbar
Ịdị mma njikwa nrụgide	1 ~ 5mbar ± 0.1mbar; 5 ~ 100mbar ± 0.2mbar; 100 ~ 700mbar ± 0.5mbar
Ụzọ ntinye	Ngwunye ala;
Nhazi nhọrọ	Ebe elele okpomọkụ okpukpu abụọ, na-ebutu forklift.

Ọrụ XKH:

XKH na-enye ọrụ okirikiri zuru oke maka ọkụ ọkụ silicon carbide CVD, gụnyere nhazi akụrụngwa (mmepụta mpaghara okpomọkụ, nhazi sistemu gas), mmepe usoro (njikwa kristal, njikarịcha ntụpọ), ọzụzụ teknụzụ (ọrụ na mmezi) na nkwado azụmaahịa (akụkụ akụkụ mapụtara nke ihe ndị dị mkpa, nyocha dịpụrụ adịpụ) iji nyere ndị ahịa aka nweta oke nrụpụta SiC substrate uka mmepụta. Ma nyekwa ọrụ nkwalite usoro ka ọ na-aga n'ihu na-emewanye mkpụrụ kristal na nrụpụta uto.