Ụdị SiC kristal ahaziri ahazi Dia 205/203/208 Ụdị 4H-N maka Nkwukọrịta Ngwa.

Ụdị SiC kristal ahaziri ahazi Dia 205/203/208 Ụdị 4H-N maka Onyonyo Nkwukọrịta Ngwa.

Nkọwa dị mkpirikpi:

SiC (silicon carbide) mkpụrụ kristal mkpụrụ, dị ka ndị isi na-ebu ihe semiconductor nke ọgbọ nke atọ, na-eme ka ịdị elu ha dị elu (4.9 W / cm · K), ike mgbawa dị elu (2-4 MV / cm), na bandgap obosara (3.2 eV) iji jee ozi dị ka ihe ntọala maka ụgbọ ala optoelectronics, ngwa nzikọrịta ike 5G. Site na teknụzụ mmepụta dị elu dị ka ụgbọ njem anụ ahụ (PVT) na mmiri mmiri epitaxy (LPE), XKH na-enye ụdị 4H / 6H-N, ihe mkpuchi ọkara, na 3C-SiC mkpụrụ mkpụrụ osisi polytype na 2-12-inch wafer formats, na micropipe densities n'okpuru 0.3 cm⁻ ⁻², resistivity n'okpuru 0.3 cm⁻², Ω0cm. isi ike (Ra) <0.2 nm. Ọrụ anyị gụnyere uto heteroepitaxial (dịka, SiC-on-Si), nanoscale precision machining (± 0.1 μm ndidi), na nnyefe ngwa ngwa zuru ụwa ọnụ, na-enye ndị ahịa ike imeri ihe mgbochi teknụzụ na mee ngwangwa nnọpụiche carbon na mgbanwe ọgụgụ isi.

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Atụmatụ

Usoro nka

Silicon carbide mkpụrụ wafer
Ụdị poly	4H
Njehie nhazi ihu elu	4° chere ihu <11-20>±0.5º
Nguzogide	nhazi
Dayameta	205 ± 0.5mm
Ọkpụrụkpụ	600± 50μm
Isi ike	CMP, Ra≤0.2nm
Njupụta Micropipe	≤1 ea/cm2
Ọkpụkpụ	≤5, ngụkọta ogologo≤2* dayameta
Iberibe ibe/indents	Ọ dịghị
Akara laser n'ihu	Ọ dịghị
Ọkpụkpụ	≤2, ngụkọta ogologo≤ Dayameta
Iberibe ibe/indents	Ọ dịghị
Mpaghara polytype	Ọ dịghị
Akara laser azụ	1mm (site na n'elu elu)
Ọnụ	Chamfer
Nkwakọ ngwaahịa	Multi-wafer cassette

Njirimara isi

1. Crystal Structure na Electric Performance

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (eg, 6H/15R), na XRD mkpatụ curve zuru-obosara na ọkara-kacha (FWHM) ≤32.7 arcsec.

· Mbugharị ụgbọ elu dị elu: Mbugharị eletrọn nke 5,400 cm²/V·s (4H-SiC) na oghere oghere nke 380 cm²/V·s, na-eme ka eserese ngwaọrụ dị elu.

Ike ike radieshon: Na-eguzogide 1 MeV neutron irradiation nwere oke mmebi nke 1 × 10¹⁵ n/cm², dị mma maka ikuku ikuku na ngwa nuklia.

2. Thermal na Mechanical Njirimara

· Omume okpomọkụ pụrụ iche: 4.9 W / cm · K (4H-SiC), okpukpu atọ nke silicon, na-akwado ọrụ n'elu 200 ° C.

Obere Mgbasa Mgbasa Ọkụ dị ala: CTE nke 4.0 × 10⁻⁶/K (25-1000°C), na-eme ka ndakọrịta na nkwakọ ngwaahịa silicon na ibelata nrụgide okpomọkụ.

3. Njikwa adịghị mma na nhazi nhazi

Njupụta Micropipe: <0.3 cm⁻² (wafers 8-inch), njupụta njupụta <1,000 cm⁻² (kwetara site na KOH etching).

Ọdịmma dị elu: CMP na-egbu maramara ka ọ bụrụ Ra <0.2 nm, na-ezute EUV lithography-grade flatness chọrọ.

Ngwa igodo

ngalaba	Ihe ngosi ngwa	Uru nka
Communications Optical	100G/400G lasers, silicon photonics ngwakọ modul	Mkpụrụ mkpụrụ InP na-eme ka bandgap kpọmkwem (1.34 eV) na heteroepitax nke dabeere na Si, na-ebelata mfu njikọ anya.
Ụgbọ ala ume ọhụrụ	800V elu voltaji inverters, n'elu chaja (OBC)	Ihe ntinye 4H-SiC na-eguzogide> 1,200 V, na-ebelata mfu conduction site na 50% yana olu sistemụ site na 40%.
Mmekọrịta 5G	Ngwaọrụ RF Millimeter-wave (PA/LNA), ihe mgba ọkụ ọdụ ọdụ	Mgbochi SiC na-ekpuchi ọkara (resistivity> 10⁵ Ω·cm) na-eme ka mbanye na-agafe agafe ugboro dị elu (60 GHz+).
Akụrụngwa ụlọ ọrụ	Ihe mmetụta okpomọkụ dị elu, ihe ngbanwe dị ugbu a, ihe nleba anya ngwa ngwa nuklia	Mkpụrụ mkpụrụ inSb (0.17 eV bandgap) na-enye ikike ndọta ruo 300% @ 10 T.

Uru ndị bụ isi

SiC (silicon carbide) mkpụrụ kristal mkpụrụ na-ebuga arụmọrụ na-enweghị atụ na 4.9 W / cm · K thermal conductivity, 2 – 4 MV / cm breakdown field ike, na 3.2 eV wide bandgap, na-eme ka ike dị elu, ugboro ugboro, na ngwa okpomọkụ dị elu. Na-egosipụta njupụta micropipe efu na <1,000 cm⁻² njupụta dislocation, ihe ndị a na-ahụ maka ntụkwasị obi na ọnọdụ dị oke egwu. Inertness kemịkalụ ha na elu CVD dakọtara (Ra <0.2 nm) na-akwado uto heteroepitaxial dị elu (dịka, SiC-on-Si) maka optoelectronics na sistemụ ike EV.

Ọrụ XKH:

1. Mmepụta ahaziri ahazi

Ụdị Wafer na-agbanwe agbanwe: 2-12-inch wafers nwere okirikiri, akụkụ anọ, ma ọ bụ nke nwere ụdị omenala (± 0.01 mm ndidi).

Njikwa doping: nitrogen (N) na aluminom (Al) doping nke ọma site na CVD, na-enweta ihe mgbochi sitere na 10⁻³ ruo 10⁶ Ω·cm.

2. Advanced Usoro Teknụzụnke

· Heteroepitaxy: SiC-on-Si (dakọtara na 8-inch silicon ahịrị) na SiC-on-Diamond (thermal conductivity>2,000 W / m·K).

Mbelata ntụpọ: hydrogen etching na annealing iji belata micropipe / njupụta ntụpọ, na-eme ka wafer mkpụrụ ruo>95%.

3. Quality Management Systemsnke

Nnwale ngwụcha ruo ngwụcha: Raman spectroscopy (nkwado polytype), XRD (crystallinity), na SEM (nyocha ntụpọ).

· Asambodo: Dabara na AEC-Q101 (ụgbọala), JEDEC (JEDEC-033), na MIL-PRF-38534 (ọkwa agha).

4. Nkwado Chain Supply Globalnke

· Ike mmepụta: mmepụta kwa ọnwa> 10,000 wafers (60% 8-inch), na nnyefe mberede 48-hour.

Network Logistics: Mkpuchi na Europe, North America, na Asia-Pacific site na ibu ikuku / oke osimiri na nkwakọ ngwaahịa na-achịkwa okpomọkụ.

5. Nkà na ụzụ Co-Developmentnke

Ụlọ nyocha R&D jikọrọ ọnụ: Imekọ ọnụ na njikarịcha nkwakọ ngwaahịa ike modul SiC (dịka ọmụmaatụ, ntinye mkpụrụ nke DBC).

Ikikere IP: Nye GaN-on-SiC RF ikike teknụzụ uto epitaxial iji belata ọnụ ahịa R&D ndị ahịa.

Nchịkọta

SiC (silicon carbide) mkpụrụ kristal mkpụrụ, dị ka ihe eji eme atụmatụ, na-emegharị ụdọ ụlọ ọrụ mmepụta ihe zuru ụwa ọnụ site na ọganiihu na uto kristal, njikwa ntụpọ, yana njikọta dị iche iche. Site n'ịga n'ihu na-aga n'ihu na mbelata ntụpọ wafer, na-emepụta mmepụta 8-inch, na ịgbasa ikpo okwu heteroepitaxial (dịka, SiC-on-Diamond), XKH na-ebuga ntụkwasị obi dị elu, ngwọta dị ọnụ ahịa maka optoelectronics, ike ọhụrụ, na mmepụta dị elu. Nkwenye anyị na imepụta ihe ọhụrụ na-eme ka ndị ahịa na-eduga na nnọpụiche carbon na sistemụ nwere ọgụgụ isi, na-ebuga oge na-esote nke gburugburu ebe obibi semiconductor obosara bandgap.