Mkpụrụ SiC Mkpụrụ Crystal Substrates Dia 205/203/208 Ụdị 4H-N maka Nkwukọrịta Anya

Mkpụrụ kristal SiC ahaziri ahazi Dia 205/203/208 Ụdị 4H-N maka Nkwukọrịta Anya Foto a na-egosipụta

Nkọwa Dị Mkpirikpi:

Ihe ndị e ji mkpụrụ osisi SiC (silicon carbide) mee, dịka ihe ndị na-ebu ihe ndị na-emepụta semiconductor nke ọgbọ nke atọ, na-eji ike ha dị elu (4.9 W/cm·K), ike ubi mgbawa dị elu (2–4 MV/cm), na bandgap sara mbara (3.2 eV) arụ ọrụ dị ka ihe ndị bụ isi maka optoelectronics, ụgbọ ala ike ọhụrụ, nkwukọrịta 5G, na ngwa aerospace. Site na teknụzụ mmepụta dị elu dị ka njem ikuku anụ ahụ (PVT) na mmiri mmiri epitaxy (LPE), XKH na-enye mkpụrụ polytype 4H/6H-N, semi-insulating, na 3C-SiC na ụdị wafer 2–12-inch, yana njupụta micropipe dị n'okpuru 0.3 cm⁻², nguzogide sitere na 20–23 mΩ·cm, na oke elu (Ra) <0.2 nm. Ọrụ anyị gụnyere mmụba heteroepitaxial (dịka ọmụmaatụ, SiC-on-Si), nhazi nhazi nanoscale (±0.1 μm ndidi), na nnyefe ngwa ngwa zuru ụwa ọnụ, na-enye ndị ahịa ike imeri ihe mgbochi teknụzụ ma mee ka nnọpụiche carbon na mgbanwe ọgụgụ isi dị ngwa.

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atụmatụ

Teknụzụ paramita

Wafer mkpụrụ silik carbide
Ụdị Polytype	4H
Njehie nhazi elu	4° gaa <11-20>±0.5º
Nguzogide	nhazi
Dayameta	205±0.5mm
Ọkpụrụkpụ	600±50μm
Isi ike	CMP,Ra≤0.2nm
Njupụta nke paịpụ micropipe	≤1 ea/cm2
Akpụkpọ	≤5, Ogologo ya niile ≤2*dayameta
Mkpọchi/ndọtị nke akụkụ	Ọ dịghị
Akara laser n'ihu	Ọ dịghị
Akpụkpọ	≤2, Ogologo ya niile ≤ Dayameta
Mkpọchi/ndọtị nke akụkụ	Ọ dịghị
Ebe polytype	Ọ dịghị
Akara laser azụ	1mm (site na nsọtụ elu)
Akụkụ	Chamfer
Nkwakọ ngwaahịa	Kaseti ọtụtụ wafer

Njirimara Ndị Dị Mkpa

1. Nhazi kristal na arụmọrụ eletriki

· Nkwụsi ike nke kristal: 100% 4H-SiC polytype dominance, enweghị multicrystalline inclusions (dịka ọmụmaatụ, 6H/15R), yana XRD rocking rocking curve zuru oke na ọkara-maximum (FWHM) ≤32.7 arcsec.

· Njem Elu nke Ndị Na-ebu Ihe: Njem elektrọn nke 5,400 cm²/V·s (4H-SiC) na ngagharị oghere nke 380 cm²/V·s, na-eme ka atụmatụ ngwaọrụ dị elu.

·Isi Ike nke Radiation: Na-eguzogide radiation neutron 1 MeV yana oke mmebi nke 1 × 10¹⁵ n/cm², nke zuru oke maka ngwa ikuku na nuklia.

2. Njirimara nke okpomọkụ na nke mekaniki

· Oke Ọkụ Pụrụ Iche: 4.9 W/cm·K (4H-SiC), okpukpu atọ nke silicon, na-akwado ọrụ karịrị 200°C.

· Ọnụọgụ Mgbasawanye Okpomọkụ Dị Ala: CTE nke 4.0×10⁻⁶/K (25–1000°C), na-ahụ na e nwere ike ijikọta ya na nkwakọ ngwaahịa dabere na silicon ma belata nrụgide okpomọkụ.

3. Njikwa na Nhazi Mmezi Nrụpụta

· Njupụta nke paịpụ micropipe: <0.3 cm⁻² (wafers nke sentimita asatọ), njupụta nke mgbanwe <1,000 cm⁻² (akwadoro site na KOH etching).

· Ogo Elu: Ejiri CMP mee ka ọ dị mma ruo Ra <0.2 nm, na-emezu ihe achọrọ maka ọkwa larịị nke EUV lithography.

Ngwa Ndị Dị Mkpa

Ngalaba	Ọnọdụ Ngwa	Uru Teknụzụ
Nkwukọrịta Anya	100G/400G lasers, silicon photonics ngwakọ modulu	Mkpụrụ InP na-eme ka bandgap kpọmkwem (1.34 eV) na heteroepitaxy dabere na Si na-eme ka ọ dị mfe, na-ebelata mfu njikọ anya.
Ụgbọala Ike Ọhụrụ	Ndị na-agbanwe voltaji dị elu nke 800V, chaja dị n'ime (OBC)	Ihe ndị mejupụtara 4H-SiC na-eguzogide ihe karịrị 1,200 V, na-ebelata mfu conduction site na 50% na olu sistemụ site na 40%.
Mmekọrịta 5G	Ngwaọrụ RF nke milimita-ebili mmiri (PA/LNA), ihe ndị na-eme ka ike dị n'ọdụ ala dị elu	Ihe ndị e ji SiC nke na-egbochi ihe mgbochi ọkara (resistvion >10⁵ Ω·cm) na-eme ka njikọta ugboro ugboro dị elu (60 GHz+) na-arụ ọrụ nke ọma.
Ngwaọrụ ụlọ ọrụ	Ihe mmetụta okpomọkụ dị elu, transformers ugbu a, ihe nlekota reactor nuklia	Mkpụrụ InSb (0.17 eV bandgap) na-enye mmetụta magnetik ruo 300% @ 10 T.

Uru Ndị Dị Mkpa

Mkpụrụ kristal mkpụrụ SiC (silicon carbide) na-enye arụmọrụ na-enweghị atụ yana njikwa okpomọkụ 4.9 W/cm·K, ike mgbawa ubi 2–4 MV/cm, na bandgap obosara 3.2 eV, na-eme ka ojiji ike dị elu, ugboro ugboro, na okpomọkụ dị elu. Na-enwe njupụta micropipe efu na njupụta dislocation <1,000 cm⁻², ihe ndị a na-eme ka a pụrụ ịtụkwasị obi n'ọnọdụ dị oke njọ. Enweghị ike kemịkalụ ha na elu dakọtara na CVD (Ra <0.2 nm) na-akwado uto heteroepitaxial dị elu (dịka ọmụmaatụ, SiC-on-Si) maka sistemụ ike optoelectronics na EV.

Ọrụ XKH:

1. Mmepụta ahaziri ahazi

· Ụdị Wafer Na-agbanwe Agbanwe: Wafer nke dị sentimita 2–12 nwere mkpụcha gburugburu, akụkụ anọ, ma ọ bụ nke e ji aka mee (±0.01 mm).

· Njikwa Doping: Ndoping nitrogen (N) na aluminom (Al) kpọmkwem site na CVD, na-enweta iguzogide dị site na 10⁻³ ruo 10⁶ Ω·cm.

2. Teknụzụ Usoro Dị Elunke

· Heteroepitaxy: SiC-on-Si (dakọtara na ahịrị silicon nke dị sentimita asatọ) na SiC-on-Diamond (ike okpomọkụ >2,000 W/m·K).

· Mbelata Nrụpụta: Ịchacha na ịchacha hydrogen iji belata ntụpọ micropipe/njupụta, na-eme ka mmepụta wafer ka mma ruo >95%.

3. Sistemụ Njikwa Ogonke

· Nnwale Ọgwụgwụ ruo na Ọgwụgwụ: Raman spectroscopy (nkwenye ụdị polytype), XRD (kristallinity), na SEM (nnyocha ntụpọ).

· Asambodo: Dabara na AEC-Q101 (ụgbọala), JEDEC (JEDEC-033), na MIL-PRF-38534 (ọkwa agha).

4. Nkwado Ngwunye Ngwakọta zuru ụwa ọnụnke

· Ike Mmepụta: Mmepụta kwa ọnwa karịrị wafers 10,000 (60% nke 8-inch), yana nnyefe mberede awa 48.

· Netwọk Njem: Mkpuchi na Yuropu, Ugwu Amerịka, na Eshia-Pacific site na ibu ikuku/oké osimiri yana nkwakọ ngwaahịa nke okpomọkụ na-achịkwa.

5. Mmepe Njikọ Aka na Teknụzụnke

· Ụlọ nyocha R&D nke jikọrọ aka: Soro na nhazi nkwakọ ngwaahịa ike SiC (dịka ọmụmaatụ, njikọta substrate DBC).

· Ikike IP: Nye ikike teknụzụ uto epitaxial GaN-on-SiC RF iji belata ọnụ ahịa nyocha na mmepe nke ndị ahịa.

Nchịkọta

Mkpụrụ kristal mkpụrụ SiC (silicon carbide), dị ka ihe dị mkpa, na-agbanwe usoro ụlọ ọrụ zuru ụwa ọnụ site na mmụba na uto kristal, njikwa ntụpọ, na njikọta dị iche iche. Site n'ịga n'ihu na-ebelata ntụpọ wafer, ịbawanye mmepụta inch 8, na ịgbasa ikpo okwu heteroepitaxial (dịka ọmụmaatụ, SiC-on-Diamond), XKH na-enye ngwọta dị elu, nke dị ọnụ ala maka optoelectronics, ike ọhụrụ, na mmepụta dị elu. Nkwa anyị na-eme ihe ọhụrụ na-eme ka ndị ahịa na-eduga na nnọpụiche carbon na sistemụ nwere ọgụgụ isi, na-eduga n'oge ọzọ nke usoro semiconductor sara mbara.