8 inch SiC silicon carbide wafer 4H-N ụdị 0.5mm mmepụta ọkwa ọkwa nyocha mkpụrụ ihe na-egbu maramara
Akụkụ bụ isi nke 8-inch silicon carbide substrate 4H-N ụdị gụnyere:
1. Microtubule njupụta: ≤ 0.1/cm² ma ọ bụ ala, dị ka microtubule njupụta na-budata belata na-erughị 0.05/cm² na ụfọdụ ngwaahịa.
2. Ụdị kristal: Ụdị kristal 4H-SiC ruru 100%.
3. Resistivity: 0.014 ~ 0.028 Ω · cm, ma ọ bụ kwụsie ike n'etiti 0.015-0.025 Ω · cm.
4. Mgbidi elu elu: CMP Si Face Ra≤0.12nm.
5. Ọkpụrụkpụ: Ọtụtụ mgbe 500.0 ± 25μm ma ọ bụ 350.0 ± 25μm.
6. chamfering n'akuku: 25 ± 5 ° ma ọ bụ 30 ± 5 ° maka A1 / A2 dabere na ọkpụrụkpụ.
7. Mkpokọta njupụta njupụta: ≤3000/cm².
8. Mmetọ ọla n'elu: ≤1E+11 atọm/cm².
9. Ehulata na warpage: ≤ 20μm na ≤2μm, n'otu n'otu.
Àgwà ndị a na-eme ka 8-inch silicon carbide substrates nwere uru ngwa dị mkpa n'ịmepụta ngwa ọkụ dị elu, nke dị elu na ngwa eletrik dị elu.
8inch silicon carbide wafer nwere ọtụtụ ngwa.
1. Ike ngwaọrụ: SiC wafers na-eji ọtụtụ ebe na-emepụta ike electronic ngwaọrụ dị ka ike MOSFETs (metal-oxide-semiconductor field-effect transistor), Schottky diodes, na ike mwekota modul. N'ihi ịdị elu nke thermal conductivity, voltaji nkwụsịtụ dị elu, na elu eletrọn nke SiC, ngwaọrụ ndị a nwere ike ịrụ ọrụ nke ọma, ngbanwe ike dị elu na okpomọkụ dị elu, elu voltaji na gburugburu ebe dị elu.
2. Optoelectronic Devices: SiC wafers na-arụ ọrụ dị mkpa na ngwaọrụ optoelectronic, nke a na-eji emepụta fotodetectors, laser diodes, ultraviolet source, wdg. Ihe ndị dị elu nke silicon carbide na-eme ka ọ bụrụ ihe a na-ahọrọ, karịsịa na ngwa ndị chọrọ okpomọkụ dị elu. elu ugboro, na elu ike ọkwa.
3. Ngwaọrụ Redio (RF): A na-ejikwa chips SiC rụpụta ngwaọrụ RF dị ka RF power amplifiers, mgba ọkụ dị elu, sensọ RF, na ndị ọzọ. Nkwụsi ike nke okpomọkụ dị elu nke SiC, njirimara ugboro dị elu, yana mfu dị ala na-eme ka ọ dị mma maka ngwa RF dị ka nkwukọrịta ikuku na sistemụ radar.
4.High-temperature electronics: N'ihi nkwụsi ike ha dị elu na nkwụsi ike nke okpomọkụ, a na-eji SiC wafers na-emepụta ngwaahịa eletrọnịkị e mere iji rụọ ọrụ na gburugburu ebe okpomọkụ dị elu, gụnyere ọkụ eletrik dị elu, sensọ, na ndị na-achịkwa.
Ụzọ isi ngwa nke 8-inch silicon carbide substrate 4H-N ụdị gụnyere mmepụta nke okpomọkụ dị elu, nke dị elu na ngwa eletrik dị elu, karịsịa n'ọhịa nke ngwá electronic, ike anyanwụ, ike ikuku, ọkụ eletrik. locomotives, sava, ngwa ụlọ, na ụgbọ ala eletrik. Na mgbakwunye, ngwaọrụ ndị dị ka SiC MOSFETs na Schottky diodes egosipụtawo ọmarịcha arụmọrụ n'ịgbanwe ugboro ugboro, nnwale mkpirisi okirikiri, na ngwa inverter, na-ebuli ojiji ha na ngwa eletrọnịkị ike.
Enwere ike ịhazi XKH na ọkpụrụkpụ dị iche iche dịka ihe ndị ahịa chọrọ. Dị iche iche n'elu roughness na polishing ọgwụgwọ dị. A na-akwado ụdị doping dị iche iche (dị ka nitrogen doping). XKH nwere ike inye nkwado teknụzụ na ọrụ ndụmọdụ iji hụ na ndị ahịa nwere ike dozie nsogbu na usoro iji. Mkpụrụ silicon carbide nke anụ ọhịa 8-inch nwere uru dị ukwuu n'ihe gbasara mbelata ọnụ ahịa yana ikike ka ukwuu, nke nwere ike belata ọnụ ahịa mgbawa ihe dịka 50% ma e jiri ya tụnyere mkpụrụ 6-inch. Na mgbakwunye, ụbara ọkpụrụkpụ nke mkpụrụ inch asatọ na-enyere aka belata nhụsianya geometrical na ihu ihu n'oge eji arụ ọrụ, si otú a na-emeziwanye mkpụrụ.