6 inch Conductive SiC Composite Substrate 4H Dayameta 150mm Ra≤0.2nm Warp≤35μm

Nkọwa dị mkpirikpi:

N'ịchụso ụlọ ọrụ semiconductor na-achụso ịrụ ọrụ dị elu yana ọnụ ala dị ala, mkpụrụ ihe mejupụtara inch isii nke SiC apụtala. Site na teknụzụ ihe mejupụtara ihe ọhụrụ, wafer 6-inch na-enweta 85% nke arụmọrụ nke wafer 8-inch ọdịnala ebe ọ na-eri naanị 60% karịa. Ngwa ike dị na ngwa kwa ụbọchị dị ka ọdụ ụgbọ ala ike ọhụrụ, modul ọdụ ụgbọ ala 5G, na ọbụna draịva na-agbanwe agbanwe na ngwa ụlọ adịchaghị nwere ike na-ejirị ụdị ụdị a. Nkà na ụzụ uto epitaxial multi-layer akwadoro anyị na-enyere oghere atọ mejupụtara larịị dị larịị na ntọala SiC, yana njupụta steeti interface dị n'okpuru 1 × 10¹¹/cm²·eV - nkọwapụta rurula ọkwa mba ụwa.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Usoro nka

Ihe	Mmepụtaọkwa	Dummyọkwa
Dayameta	6-8 anụ ọhịa	6-8 anụ ọhịa
Ọkpụrụkpụ	350/500±25.0 μm	350/500±25.0 μm
Ụdị poly	4H	4H
Nguzogide	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TTV	≤5 μm	≤20 μm
Warp	≤35 μm	≤55 μm
N'ihu (Si-face) adịghị ike	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Atụmatụ igodo

1.Cost Advantage: 6-inch conductive SiC composite substrate na-eji teknụzụ "graded buffer Layer" nke na-eme ka ihe mejupụtara ya belata ọnụ ahịa akụrụngwa site na 38% ma na-ejigide arụmọrụ eletrik dị mma. Ntụle n'ezie na-egosi na ngwaọrụ 650V MOSFET na-eji mkpụrụ a na-enweta mbelata 42% n'ọnụ ahịa otu mpaghara ma e jiri ya tụnyere usoro ọdịnala, nke dị mkpa maka ịkwalite nnabata ngwaọrụ SiC na ngwa elektrọn ndị ahịa.
2.Excellent Conductive Properties: Site kpọmkwem nitrogen doping akara Filiks, anyị 6-inch conductive SiC mejupụtara mkpụrụ nweta ultra-low resistivity nke 0.012-0.022Ω · cm, na mgbanwe na-achịkwa n'ime ± 5%. N'ụzọ doro anya, anyị na-edobe ịdị n'otu nke resistivity ọbụlagodi n'ime mpaghara ihu 5mm nke wafer, na-edozi nsogbu mmetụta dị ogologo na ụlọ ọrụ ahụ.
3.Thermal Performance: A 1200V / 50A modul mepụtara iji anyị mkpụrụ na-egosi naanị 45 ℃ junction okpomọkụ ịrị elu n'elu ambient na zuru ibu ọrụ - 65 ℃ ala karịa silicon dabeere ngwaọrụ. Nke a na-enyere ya aka site na nhazi ihe mejupụtara "3D thermal channel" nke na-eme ka ikuku ọkụ dị n'akụkụ gaa na 380W/m·K na vetikal thermal conductivity na 290W/m·K.
4.Process ndakọrịta: N'ihi na pụrụ iche Ọdịdị nke 6-inch conductive SiC mejupụtara substrates, anyị mepụtara a kenha stealth laser dicing usoro ọbọ 200mm / s ọnwụ ọsọ mgbe ịchịkwa ihu chipping n'okpuru 0.3μm. Tụkwasị na nke a, anyị na-enye nhọrọ ntinye nke nickel-plated nke na-enyere aka ịnwụ anwụ bonding, na-azọpụta ndị ahịa usoro usoro abụọ.

Ngwa isi

Ngwa grid Smart dị egwu:

Na ultra-high voltaji dị ugbu a (UHVDC) nnyefe sistemu na-arụ ọrụ na ± 800kV, ngwaọrụ IGCT na-eji 6-inch conductive SiC composite substrates na-egosipụta nkwalite arụmọrụ dị ịrịba ama. Ngwaọrụ ndị a na-enweta mbelata 55% n'ịgbanwe mfu n'oge usoro mmegharị, ebe na-abawanye arụmọrụ sistemu zuru oke gafere 99.2%. The substrates' elu thermal conductivity (380W/m·K) na-enyere kọmpat Ntụgharị aghụghọ na-ebelata substation akara ukwu site 25% tụnyere omenala dabeere silicon.

Ụgbọ okporo ígwè ike ọhụrụ:

Sistemụ draịva ahụ na-etinye ihe nrụpụta SiC nke anụ ọhịa 6 na-arụ ọrụ na-enweta njupụta ike inverter na-enwetụbeghị ụdị ya nke 45kW / L - mmụba 60% karịa atụmatụ 400V silicon gara aga ha. Kachasị mma, usoro na-ejigide 98% arụmọrụ gafee dum arụ ọrụ okpomọkụ nso si -40 ℃ ka +175 ℃, na-edozi oyi-idu ọrụ ịma aka nke kpagidere nkuchi EV na ugwu ihu igwe. Nnwale n'ezie na-egosi mmụba 7.5% n'oge oyi maka ụgbọ ala nwere teknụzụ a.

Ọkwọ ụgbọala na-agbanwe agbanwe nke ụlọ ọrụ:

Nkwenye nke substrates anyị na modul ike ọgụgụ isi (IPMs) maka sistemu servo nke ụlọ ọrụ na-agbanwe akpaaka nrụpụta. Na ụlọ ọrụ CNC, modul ndị a na-ebuga nzaghachi moto 40% ngwa ngwa (na-ebelata oge osooso site na 50ms ruo 30ms) ebe ị na-egbutu mkpọtụ electromagnetic site na 15dB ruo 65dB (A).

Eletrọnịkị ndị ahịa:

Mgbanwe nke eletrọnịkị ndị ahịa na-aga n'ihu na mkpụrụ anyị na-enyere ndị na-esote 65W GaN chaja ngwa ngwa. Ihe nkwụnye ọkụ kọmpat ndị a na-enweta mbelata olu 30% (ruo 45cm³) ka ha na-ejigide nrụpụta ike zuru oke, ekele maka ngbanwe dị elu nke atụmatụ dabere na SiC. Onyonyo ọkụ na-egosi oke ọnọdụ okpomọkụ nke naanị 68 Celsius C n'oge arụ ọrụ na-aga n'ihu - 22 Celsius C jụrụ oyi karịa atụmatụ a na-emekarị - na-eme ka ndụ ngwaahịa na nchekwa dịkwuo mma.

Ọrụ nhazi nke XKH

XKH na-enye nkwado nhazi nhazi zuru oke maka 6-inch conductive SiC composite substrates:

Nhazi ịdị arọ: Nhọrọ gụnyere 200μm, 300μm, na nkọwa 350μm
2. Njikwa nguzogide: N-ụdị doping na-agbanwe agbanwe site na 1 × 10¹⁸ ruo 5 × 10¹⁸ cm⁻³

3. Crystal Orientation: Nkwado maka otutu nghazi gụnyere (0001) off-axis 4 ° ma ọ bụ 8 °

4. Ọrụ Nnwale: Akuko nnwale oke-ọkwa wafer zuru ezu

Oge ndu anyị ugbu a site na prototyping ruo na mmepụta oke nwere ike ịdị mkpụmkpụ dị ka izu 8. Maka ndị ahịa dị mkpa, anyị na-enye ọrụ mmepe usoro raara onwe ya nye iji hụ na ọ dabara nke ọma na chọrọ ngwaọrụ.