4 inch SiC Wafers 6H Semi-Insulating SiC Substrates praịmarị, nyocha na ọkwa nju.
Nkọwapụta ngwaahịa
| Ọkwa | Ọkwa mmepụta MPD efu (ọkwa Z) | Ọkachamara Mmepụta Ọkọrịa(P Ọkwa) | Ngụsị akwụkwọ (D grade) | ||||||||
| Dayameta | 99.5 mm ~ 100.0 mm | ||||||||||
| 4H-SI | 500 μm± 20 μm | 500 μm± 25 μm | |||||||||
| Usoro Wafer |
Gbanyụọ axis: 4.0° n'ebe <1120> ± 0.5° maka 4H-N, On axis: <0001>±0.5° maka 4H-SI | ||||||||||
| 4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||||||||
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
| Nhazi Flat nke izizi | {10-10} ±5.0° | ||||||||||
| Ogologo Flat nke izizi | 32.5 mm± 2.0 mm | ||||||||||
| Ogologo Flat nke abụọ | 18.0 mm± 2.0 mm | ||||||||||
| Nhazi Flat nke abụọ | Silicon ihu elu: 90° CW. si Prime flat ± 5.0° | ||||||||||
| Mwepu ihu | 3 mm | ||||||||||
| LTV/TTV/Ụta/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
| Isi ike | C ihu | Polish | Ra≤1 nm | ||||||||
| Si ihu | CMP | Ra≤0.2 nm | Ra ≤0.5 nm | ||||||||
| Edge cracks Site na nnukwu ọkụ ọkụ | Ọ dịghị | Ogologo ngụkọta ≤ 10 mm, otu ogologo≤2 mm | |||||||||
| Efere Hex Site na Ìhè Dị Elu | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤0.1% | |||||||||
| Mpaghara Polytype Site n'ìhè dị elu | Ọ dịghị | Mpaghara mkpokọta≤3% | |||||||||
| Ntinye Carbon Anya Anya | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤3% | |||||||||
| Silicon dị n'elu Scratches Site na nnukwu ọkụ ọkụ | Ọ dịghị | Ogologo ngụkọta ogologo≤1＊wafer dayameta | |||||||||
| Edge Chips High Site n'ọkụ ọkụ | Ọnweghị nke enyere ikike ≥0.2 mm obosara na omimi | 5 kwere, ≤1 mm nke ọ bụla | |||||||||
| Mmetọ Silicon dị n'elu site na oke ike | Ọ dịghị | ||||||||||
| Nkwakọ ngwaahịa | Cassette Multi-wafer ma ọ bụ otu akpa wafer | ||||||||||
Eserese zuru ezu
Dee ozi gị ebe a ziga anyị ya
