2 inch Sic silicon carbide substrate 6H-N Ụdị 0.33mm 0.43mm polishing akụkụ abụọ nke elu okpomọkụ conductivity dị ala ike oriri.

2 inch Sic silicon carbide substrate 6H-N Ụdị 0.33mm 0.43mm polishing akụkụ abụọ nwere akụkụ dị elu nke ọkụ ọkụ dị ala egosipụtara Foto.

Nkọwa dị mkpirikpi:

Silicon carbide (SiC) bụ ihe nwere oghere semiconductor nwere ọmarịcha ikuku na nkwụsi ike kemịkal. Ụdị 6H-N na-egosi na nhazi kristal ya bụ hexagonal (6H), na "N" na-egosi na ọ bụ ihe N-ụdị semiconductor ihe, nke a na-enwetakarị site na doping nitrogen.
Mkpụrụ osisi silicon carbide nwere njirimara magburu onwe ya nke nguzogide nrụgide dị elu, oke okpomọkụ na-eguzogide, arụmọrụ ugboro ugboro, wdg. E jiri ya tụnyere ngwaahịa silicon, ngwaọrụ a kwadebere site na mkpụrụ osisi silicon nwere ike belata ọnwụ site na 80% ma belata nha ngwaọrụ site na 90%. N'ihe banyere ụgbọ ala ume ọhụrụ, silicon carbide nwere ike inyere ụgbọ ala ume ọhụrụ aka iru nha ma belata mfu, ma na-abawanye oke ịnya ụgbọ ala; N'ihe gbasara nzikọrịta ozi 5G, enwere ike iji ya maka imepụta akụrụngwa metụtara ya; Na mmepụta ike fotovoltaic nwere ike melite arụmọrụ ngbanwe; Ogige nke ụzọ ụgbọ oloko nwere ike iji oke okpomọkụ ya na njirimara nguzogide nrụgide dị elu.

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Ihe ndị a bụ njirimara nke 2inch silicon carbide wafer

1. Isi ike: Mohs hardness bụ banyere 9.2.
2. Ọdịdị kristal: ihe owuwu hexagonal lattice.
3. High thermal conductivity: thermal conductivity nke SiC dị elu karịa nke silicon, nke na-eme ka ikpochapụ ọkụ dị irè.
4. Ogologo oghere sara mbara: ọdịiche nke band nke SiC bụ banyere 3.3eV, kwesịrị ekwesị maka okpomọkụ dị elu, ugboro ugboro na ngwa ike dị elu.
5. Nkwụsị eletriki eletrik na mmegharị eletrọn: Igwe ọkụ eletrik dị elu na-agbaji na-agagharị agagharị, dị mma maka ngwaọrụ eletrik dị mma dị ka MOSFET na IGBT.
6. Nkwụsi ike nke kemịkalụ na nguzogide radieshon: adabara maka gburugburu ebe siri ike dị ka ikuku ikuku na nchekwa mba. Nguzogide kemịkalụ mara mma, acid, alkali na ihe mgbaze ndị ọzọ.
7. Elu ígwè ọrụ ike: Magburu onwe n'ibu ike n'okpuru elu okpomọkụ na elu nrụgide gburugburu ebe obibi.
Enwere ike iji ya mee ihe n'ọtụtụ ebe na ike dị elu, ngwa eletrik dị elu na okpomọkụ dị elu, dị ka ultraviolet photodetectors, photovoltaic inverters, PCUs ụgbọala eletrik, wdg.

2inch silicon carbide wafer nwere ọtụtụ ngwa.

1.Power ngwaọrụ eletrọnịkị: eji arụpụta ike dị elu MOSFET, IGBT na ngwaọrụ ndị ọzọ, nke a na-ejikarị na ntụgharị ike na ụgbọ ala eletrik.

Ngwa 2.Rf: N'ime ngwa nzikọrịta ozi, SiC nwere ike iji mee ihe na-eme ka ọ bụrụ ihe na-eme ka ọ dịkwuo elu na RF power amplifiers.

3.Photoelectric ngwaọrụ: dị ka SIC dabeere leds, karịsịa na-acha anụnụ anụnụ na ultraviolet ngwa.

4.Sensọ: N'ihi okpomọkụ dị elu na nguzogide kemịkalụ, SiC substrates nwere ike iji mepụta ihe mmetụta okpomọkụ dị elu na ngwa mmetụta ndị ọzọ.

5.Military na aerospace: n'ihi na ọ na-eguzogide okpomọkụ dị elu na njirimara ike dị elu, nke kwesịrị ekwesị maka iji mee ihe na gburugburu ebe obibi.

Akụkụ ngwa ngwa nke 6H-N ụdị 2 "SIC substrate gụnyere ụgbọ ala ike ọhụrụ, nnyefe voltaji dị elu na ọdụ mgbanwe, ngwongwo ọcha, ụgbọ oloko dị elu, moto, inverter photovoltaic, ọkụ ọkụ na ihe ndị ọzọ.

Enwere ike ịhazi XKH na ọkpụrụkpụ dị iche iche dịka ihe ndị ahịa chọrọ. Dị iche iche n'elu roughness na polishing ọgwụgwọ dị. A na-akwado ụdị doping dị iche iche (dị ka nitrogen doping). Oge nnyefe ọkọlọtọ bụ izu 2-4, dabere na nhazi ahụ. Jiri ihe nkwakọ ngwaahịa mgbochi static na ụfụfụ mgbochi seismic iji hụ na nchekwa nke mkpụrụ osisi ahụ. Nhọrọ mbupu dị iche iche dị, ndị ahịa nwere ike ịlele ọnọdụ nke ngwa ngwa ozugbo site na nọmba nsochi enyere. Nye nkwado teknụzụ na ọrụ ndụmọdụ iji hụ na ndị ahịa nwere ike dozie nsogbu na usoro iji.