12 inch SIC mkpụrụ silicon carbide praịm ọkwa dayameta 300mm nnukwu nha 4H-N dabara maka mgbasa ọkụ ngwaọrụ dị elu

12 inch SIC mkpụrụ silicon carbide praịm ọkwa dayameta 300mm buru ibu 4H-N Kwesịrị ekwesị maka mgbasa ozi ọkụ dị elu ngwaọrụ egosipụtara

Nkọwa dị mkpirikpi:

Mkpụrụ sịlịkọn carbide nke anụ ọhịa 12-inch (Mkpụrụ SiC) bụ nnukwu ihe na-arụ ọrụ semiconductor ihe sitere na otu kristal silicon carbide. Silicon carbide (SiC) bụ nnukwu oghere semiconductor ihe nwere ọmarịcha ọkụ eletrik, thermal na akụrụngwa, nke a na-ejikarị eme ihe n'ichepụta ngwaọrụ eletrọnịkị na ike dị elu, ugboro dị elu na gburugburu ọnọdụ okpomọkụ. Mkpụrụ 12-inch (300mm) bụ nkọwapụta dị elu ugbu a nke teknụzụ silicon carbide, nke nwere ike melite arụmọrụ mmepụta yana belata ọnụ ahịa.

Zitere anyị email

Nkọwa ngwaahịa

Mkpado ngwaahịa

Njirimara ngwaahịa

1. High thermal conductivity: thermal conductivity nke silicon carbide bụ ihe karịrị ugboro 3 nke silicon, nke kwesịrị ekwesị maka ikpo ọkụ ngwaọrụ dị elu.

2. Ike mgbawa dị elu: Ike nkwụsịtụ bụ ugboro 10 nke silicon, dabara maka ngwa nrụgide dị elu.

3.Wide bandgap: The bandgap bụ 3.26eV (4H-SiC), adabara elu okpomọkụ na elu ugboro ngwa ngwa.

4. High hardness: Mohs hardness bụ 9.2, nke abụọ naanị diamond, magburu onwe eyi nguzogide na ike n'ibu.

5. Nkwụsi ike nke kemịkalụ: nguzogide corrosion siri ike, arụmọrụ kwụsiri ike na oke okpomọkụ na gburugburu ebe obibi siri ike.

6. Nnukwu nha: 12 inch (300mm) mkpụrụ, melite mmepụta mmepụta, belata ọnụ ahịa otu.

7.Low ntụpọ njupụta: elu àgwà otu kristal ibu technology iji hụ na obere ntụpọ njupụta na elu agbanwe agbanwe.

Ntụziaka isi ngwa ngwaahịa

1. Igwe eletrọnịkị ike:

Mosfets: A na-eji ụgbọ ala eletrik, moto ụlọ ọrụ mmepụta ihe na ndị ntụgharị ike.

Diodes: dị ka Schottky diodes (SBD), eji maka mmezi nke ọma na ịgbanye ọkụ ọkụ.

2. Rf ngwaọrụ:

Rf power amplifier: ejiri ya na ọdụ nkwukọrịta 5G yana nkwukọrịta satịlaịtị.

Ngwaọrụ Microwave: Kwesịrị ekwesị maka sistemụ nkwukọrịta ikuku na radar.

3. Ụgbọ ala ume ọhụrụ:

Sistemụ mbanye eletrik: ndị na-ahụ maka moto na ndị inverters maka ụgbọ ala eletrik.

Okpokoro chajị: modul ike maka ngwa nchaji ngwa ngwa.

4. Ngwa ụlọ ọrụ:

Inverter voltaji dị elu: maka njikwa moto ụlọ ọrụ na njikwa ike.

Smart Grid: Maka nnyefe HVDC na ihe ngbanwe ọkụ eletrik.

5. Aerospace:

Igwe eletrọnịkị dị elu: dabara maka ọnọdụ okpomọkụ dị elu nke akụrụngwa ikuku.

6. Mpaghara nyocha:

Nnyocha semiconductor bandgap sara mbara: maka mmepe nke ihe na ngwaọrụ semiconductor ọhụrụ.

Mkpụrụ silicon carbide nke 12-inch bụ ụdị ihe nrụpụta semiconductor na-arụ ọrụ dị elu nwere ihe ndị mara mma dị ka ikuku ikuku dị elu, ike mgbawa dị elu na oghere band. A na-eji ya eme ihe na ngwa elektrọnik ike, ngwaọrụ ugboro redio, ụgbọ ala ike ọhụrụ, njikwa ụlọ ọrụ na ikuku ikuku, ma bụrụ ihe dị mkpa iji kwalite mmepe nke ọgbọ na-esote nke ngwaọrụ elektrọnik na-arụ ọrụ nke ọma na nke dị elu.

Ọ bụ ezie na silicon carbide substrates ugbu a nwere obere ngwa ozugbo na ngwa eletrọnịkị ndị ahịa dị ka iko AR, ikike ha nwere na njikwa ike dị mma yana obere eletrọnịkị dị ntakịrị nwere ike ịkwado ihe nrụpụta ike dị arọ, dị elu maka ngwaọrụ AR/VR n'ọdịnihu. Ka ọ dị ugbu a, isi mmepe nke mkpụrụ osisi silicon carbide na-elekwasị anya na mpaghara mmepụta ihe dị ka ụgbọ ala ike ọhụrụ, akụrụngwa nkwukọrịta na akpaaka ụlọ ọrụ, ma na-akwalite ụlọ ọrụ semiconductor iji zụlite n'ụzọ dị mma na ntụkwasị obi.

XKH gbalịsiri ike ịnye ihe ntanetị 12 "SIC dị elu nwere nkwado na ọrụ teknụzụ zuru oke, gụnyere:

1. ahaziri mmepụta: Dị ka ndị ahịa kwesịrị inye dị iche iche resistivity, crystal nghazi na elu ọgwụgwọ mkpụrụ.

2. Nhazi usoro: Nye ndị ahịa nkwado teknụzụ nke uto epitaxial, nrụpụta ngwaọrụ na usoro ndị ọzọ iji melite arụmọrụ ngwaahịa.

3. Nnwale na asambodo: Nye nchọpụta ntụpọ siri ike na asambodo dị mma iji hụ na mkpụrụ ahụ na-ezute ụkpụrụ ụlọ ọrụ.

4.R&d imekọ ihe ọnụ: Jikọọ ọnụ mepụta ọhụrụ silicon carbide ngwaọrụ na ndị ahịa na-akwalite nkà na ụzụ ọhụrụ.

Chaatị data

1 2 inch Silicon Carbide (SiC) Nkọwapụta mkpụrụ
Ọkwa		Mmepụta ZeroMPD Ọkwa (ọkwa Z)	Standard mmepụta Ọkwa(P Ọkwa)		Ngụsị akwụkwọ (D ọkwa)
Dayameta		3 00mm ~ 305mm
Ọkpụrụkpụ	4H-N	750μm± 15 μm	750μm±25 μm
	4H-SI	750μm± 15 μm	750μm±25 μm
Usoro Wafer		Gbanyụọ axis: 4.0° n'ebe <1120>±0.5° maka 4H-N, On axis: <0001>±0.5° maka 4H-SI
Njupụta Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Nguzogide	4H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Nhazi Flat nke izizi		{10-10} ±5.0°
Ogologo Flat nke izizi	4H-N	N/A
	4H-SI	Ọkwa
Mwepu ihu		3 mm
LTV/TTV/Ụta/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Isi ike		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra ≤0.5 nm
Edge cracks Site na nnukwu ọkụ ọkụ Efere Hex Site na Ìhè Dị Elu Mpaghara Polytype Site n'ìhè dị elu Ntinye Carbon Anya Anya Silicon dị n'elu Scratches Site na nnukwu ọkụ ọkụ		Ọ dịghị Mpaghara mkpokọta ≤0.05% Ọ dịghị Mpaghara mkpokọta ≤0.05% Ọ dịghị			Ogologo ngụkọta ≤ 20 mm, otu ogologo≤2 mm Mpaghara mkpokọta ≤0.1% Mpaghara mkpokọta≤3% Mpaghara mkpokọta ≤3% Mgbakọ ogologo≤1 × dayameta wafer
Chips Edge Site na Ìhè Dị Elu		Ọnweghị nke anabatara obosara na omimi ≥0.2mm			7 kwere, ≤1 mm nke ọ bụla
(TSD) Ịghasa eriri eriri		≤500 cm-2		N/A
(BPD) Ntugharị ụgbọ elu isi		≤1000 cm-2		N/A
Mmetọ Silicon dị n'elu site na ọkụ ọkụ dị elu		Ọ dịghị
Nkwakọ ngwaahịa		Cassette Multi-wafer ma ọ bụ otu akpa wafer
ndetu:
1 Oke ntụpọ na-emetụta n'elu wafer dum belụsọ mpaghara mwepu ihu. 2Ekwesịrị ịlele ncha ahụ naanị na ihu Si. 3 Data mwepu bụ naanị site na KOH etched wafers.

XKH ga-aga n'ihu na-etinye ego na nyocha na mmepe iji kwalite ọganihu nke 12-inch silicon carbide substrates na nnukwu nha, obere ntụpọ na ịdị elu dị elu, ebe XKH na-enyocha ngwa ya na mpaghara ndị na-apụta dị ka ngwá electronic ndị na-azụ ahịa (dị ka modul ike maka ngwaọrụ AR / VR) na nhazi nke quantum. Site n'ibelata ọnụ ahịa na ịba ụba ikike, XKH ga-eweta ọganihu na ụlọ ọrụ semiconductor.