Usoro nhazi SiCOI nke dị sentimita 4, nke dị sentimita 6, nke nwere usoro HPSI SiC SiO2 Si

Wafer SiCOI nke dị sentimita 4 n'obosara 6 n'obosara HPSI SiC SiO2 Si nhazi subatrate Foto a na-egosipụta

Nkọwa Dị Mkpirikpi:

Akwụkwọ a na-egosi nkọwa zuru ezu nke wafers Silicon Carbide-on-Insulator (SiCOI), nke na-elekwasị anya kpọmkwem na ihe ndị dị n'ime inch 4 na inch 6 nke nwere akwa silicon carbide (SiC) dị ọcha nke ejikọtara na akwa mkpuchi silicon dioxide (SiO₂) n'elu ihe ndị dị ...

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Ọdịdị nke wafer SiCOI

HPB (njikọ arụmọrụ dị elu) BIC (njikọ njikọta agbakọtara agbakọta) na SOD (teknụzụ Silicon-on-Diamond ma ọ bụ Silicon-on-Insulator-dị ka teknụzụ). Ọ gụnyere:

Usoro Arụmọrụ:

Na-edepụta paramita dịka izi ezi, ụdị njehie (dịka ọmụmaatụ, "Enweghị njehie," "Ọnọdụ uru"), na nha ọkpụrụkpụ (dịka ọmụmaatụ, "Ọkpụrụkpụ Layer-Direct/kg").

Tebụl nwere ụkpụrụ ọnụọgụgụ (ikekwe paramita nnwale ma ọ bụ usoro) n'okpuru isiokwu dịka "ADDR/SYGBDT," "10/0," wdg.

Data ọkpụrụkpụ oyi akwa:

Ntinye ndị a na-emegharị ugboro ugboro nke akpọrọ "Ike L1 (A)" ruo "Ike L270 (A)" (o yikarịrị ka ọ dị na Ångströms, 1 Å = 0.1 nm).

Na-atụ aro nhazi nwere ọtụtụ oyi akwa nwere njikwa ọkpụrụkpụ ziri ezi maka oyi akwa ọ bụla, nke a na-ahụkarị na wafer semiconductor dị elu.

Ọdịdị Wafer SiCOI

SiCOI (Silicon Carbide on Insulator) bụ usoro wafer pụrụ iche nke jikọtara silicon carbide (SiC) na oyi akwa mkpuchi, nke yiri SOI (Silicon-on-Insulator) mana ọ ka mma maka ojiji ike dị elu/okpomọkụ dị elu. Isi ihe dị mkpa:

Ngwakọta oyi akwa:

Akwa Elu: Otu kristal Silicon Carbide (SiC) maka ngagharị elektrọn dị elu na nkwụsi ike okpomọkụ.

Ihe mkpuchi e liri n'ili: A na-ejikarị SiO₂ (oxide) ma ọ bụ diamond (na SOD) eme ihe iji belata ikike nje ma melite ikewapụ onwe onye.

Isi Ala: Silicon ma ọ bụ polycrystalline SiC maka nkwado igwe

Njirimara nke wafer SiCOI

Njirimara Ọdụdọ Eletriki Oke oghere (3.2 eV maka 4H-SiC): Na-eme ka voltaji mgbawa dị elu (>10× karịa silicon). Na-ebelata mmiri mmiri na-agbapụta, na-eme ka arụmọrụ dị mma na ngwaọrụ ike.

Njem Elektrọn Dị Elu:~900 cm²/V·s (4H-SiC) vs. ~1,400 cm²/V·s (Si), mana arụmọrụ dị elu ka mma.

Obere Nguzogide Na-adịghị Ike:Transistors nke dabere na SiCOI (dịka ọmụmaatụ, MOSFETs) na-egosi obere mfu nke conduction.

Mkpuchi dị mma:Oxide e liri n'ala (SiO₂) ma ọ bụ oyi akwa dayamọnd na-ebelata ikike parasitic na mkparịta ụka.

Njirimara nke okpomọkụOke Ọkụ Na-eme Ka Ọkụ Dị Elu:SiC (~490 W/m·K maka 4H-SiC) vs. Si (~150 W/m·K). Daịamọnd (ọ bụrụ na ejiri ya dị ka ihe mkpuchi) nwere ike ịgafe 2,000 W/m·K, nke na-eme ka okpomọkụ na-agbaze ngwa ngwa.

Ịkwụsi Ike nke Okpomọkụ:Ọ na-arụ ọrụ nke ọma na >300°C (site na ~150°C maka silicon). Ọ na-ebelata ihe achọrọ maka oyi na ngwa eletrọniki ike.

3. Njirimara Mekaniki na KemịkalụIke siri ike (~ 9.5 Mohs): Na-eguzogide iyi, na-eme ka SiCOI sie ike maka gburugburu ebe siri ike.

Enweghị ike kemịkalụ:Ọ na-eguzogide oxidation na corrosion, ọbụlagodi n'ọnọdụ acidic/alkaline.

Mgbasawanye Okpomọkụ dị ala:Dakọtara nke ọma na ihe ndị ọzọ dị elu (dịka ọmụmaatụ, GaN).

4. Uru Nhazi (na nnukwu SiC ma ọ bụ SOI)

Mbelata Mfu nke ihe ndị dị n'ime ala:Ihe mkpuchi mkpuchi na-egbochi mmiri mmiri na-agbapụta n'ime ihe mkpuchi ahụ.

Arụmọrụ RF ka mma:Ike parasitic dị ala na-eme ka mgbanwe ngwa ngwa (ọ bara uru maka ngwaọrụ 5G/mmWave).

Nhazi dị mfe:N'elu SiC dị gịrịgịrị, oyi akwa dị gịrịgịrị na-enye ohere maka nhazi ngwaọrụ kachasị mma (dịka ọmụmaatụ, ọwa dị gịrịgịrị na transistors).

Ntụnyere na SOI na SiC buru ibu

Akụ na ụba	SiCOI	SOI (Si/SiO₂/Si)	SiC buru ibu
Bandgap	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
Ọgbakọ okpomọkụ	Elu (SiC + dayamọnd)	Dị ala (SiO₂ na-egbochi mgbasa okpomọkụ)	Elu (naanị SiC)
Voltaji mmebi	Oke Elu	Nke dị n'etiti	Oke Elu
Ọnụ ego	Ka Elu	Ala	Kasị Elu (SiC dị ọcha)

Ngwa wafer SiCOI

Eletrọniki Ike
A na-eji wafer SiCOI eme ihe nke ukwuu na ngwaọrụ semiconductor dị elu na nke nwere ike dị elu dịka MOSFETs, Schottky diodes, na switches ike. Nnukwu bandgap na voltaji mmebi dị elu nke SiC na-eme ka mgbanwe ike dị irè yana mbelata mfu na arụmọrụ okpomọkụ ka mma.

Ngwaọrụ Ugboro Redio (RF)
Ihe mkpuchi dị na wafers SiCOI na-ebelata ikike parasitic, na-eme ka ha dabara adaba maka transistors na amplifiers dị elu nke ejiri na teknụzụ nkwukọrịta, radar, na 5G.

Sistemụ Microelectromechanical (MEMS)
Wafers SiCOI na-enye ikpo okwu siri ike maka imepụta sensọ MEMS na ihe na-eme ihe nke na-arụ ọrụ nke ọma na gburugburu ebe siri ike n'ihi enweghị ike kemịkalụ na ike igwe nke SiC.

Eletrọniki Okpomọkụ Dị Elu
SiCOI na-eme ka ngwa eletrọnịkị na-arụ ọrụ na ntụkwasị obi n'oge okpomọkụ dị elu, na-abara uru maka ngwa ụgbọ ala, ụgbọelu, na ụlọ ọrụ mmepụta ihe ebe ngwaọrụ silicon nkịtị na-ada ada.

Ngwaọrụ Photonic na Optoelectronic
Njikọta nke ihe ndị dị na anya SiC na oyi akwa mkpuchi na-eme ka njikọta nke sekit fotonik na njikwa okpomọkụ ka mma.

Elektrọnik siri ike nke radieshon
N'ihi nnwere onwe radieshon nke SiC, wafers SiCOI dị mma maka ngwa oghere na nuklia nke chọrọ ngwaọrụ ndị na-eguzogide gburugburu radieshon dị elu.

Ajụjụ na Azịza nke wafer SiCOI

Q1: Gịnị bụ wafer SiCOI?

A: SiCOI na-anọchite anya Silicon Carbide-on-Insulator. Ọ bụ nhazi wafer semiconductor ebe a na-ejikọta obere oyi akwa silicon carbide (SiC) na akwa mkpuchi (karịsịa silicon dioxide, SiO₂), nke ihe mkpuchi silicon na-akwado. Nhazi a na-ejikọta ihe onwunwe dị mma nke SiC na ikewapụ eletriki site na ihe mkpuchi ahụ.

Q2: Kedu uru ndị bụ isi nke wafers SiCOI?

A: Uru ndị bụ isi gụnyere voltaji dị elu nke na-emebi emebi, oghere band dị obosara, njikwa okpomọkụ dị mma, ike mekaniki dị elu, na mbelata ikike parasitic site na oyi akwa mkpuchi. Nke a na-eduga na arụmọrụ ngwaọrụ ka mma, arụmọrụ, na ntụkwasị obi.

Q3: Kedu ihe a na-ejikarị eme wafers SiCOI?

A: A na-eji ha eme ihe na ngwa eletrọniki ike, ngwa RF ugboro ugboro, ihe mmetụta MEMS, ngwa eletrọniki okpomọkụ dị elu, ngwa fotonik, na ngwa eletrọniki nke radieshon siri ike.