Wafer 4H-N HPSI SiC 6H-N 6H-P 3C-N SiC Wafer Epitaxial maka MOS ma ọ bụ SBD
Nkọwa Epi-wafer nke SiC Substrate SiC
Anyị na-enye nchịkọta zuru oke nke ihe ndị dị elu SiC na wafers sic dị elu n'ọtụtụ ụdị na profaịlụ doping—gụnyere 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating semi), na 6H-P (p-type conductive)—na dayameta site na 4″, 6″, na 8″ ruo 12″. Karịa substrates gba ọtọ, ọrụ uto epi wafer anyị agbakwunyere na-enye wafers epitaxial (epi) nwere ọkpụrụkpụ a na-achịkwa nke ọma (1–20 µm), njupụta doping, na njupụta ntụpọ.
A na-enyocha sic wafer na epi wafer ọ bụla nke ọma n'ime ahịrị (njupụta micropipe <0.1 cm⁻², oke elu Ra <0.2 nm) na njirimara eletriki zuru oke (CV, mapping resistive) iji hụ na kristal dị n'otu na arụmọrụ pụrụ iche. Ma ejiri ya maka modulu eletrọniki ike, amplifiers RF ugboro ugboro, ma ọ bụ ngwaọrụ optoelectronic (LEDs, photodetectors), akara ngwaahịa SiC substrate na epi wafer anyị na-enye ntụkwasị obi, nkwụsi ike okpomọkụ, na ike mmebi nke ngwa ndị kacha achọ taa chọrọ.
Njirimara na ngwa nke ụdị SiC Substrate 4H-N
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Ụdị Polytype (Hexagonal) nke 4H-N SiC
Oke oghere nke ~3.26 eV na-eme ka arụmọrụ eletriki kwụsie ike na ike okpomọkụ dị n'okpuru ọnọdụ okpomọkụ dị elu na ọkụ eletrik dị elu.
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Ihe mejupụtara SiCN-Ụdị Doping
Ntụnye nitrogen a na-achịkwa nke ọma na-eme ka ọnụọgụgụ ndị na-ebu ibu dị site na 1×10¹⁶ ruo 1×10¹⁹ cm⁻³ na mmegharị elektrọn n'ime ụlọ ruo ~900 cm²/V·s, na-ebelata mfu nke nnyefe.
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Ihe mejupụtara SiCNguzogide zuru oke na otu
Oke iguzogide dị site na 0.01–10 Ω·cm na ọkpụrụkpụ wafer nke 350–650 µm yana ndidi ±5% ma na doping na ọkpụrụkpụ - nke dị mma maka imepụta ngwaọrụ nwere ike dị elu.
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Ihe mejupụtara SiCNjupụta ntụpọ dị oke ala
Njupụta nke paịpụ micropipe < 0.1 cm⁻² na njupụta nke basal-plane dislocation < 500 cm⁻², na-enye ihe karịrị 99% mmepụta ngwaọrụ na iguzosi ike n'ezi ihe kristal dị elu.
- Ihe mejupụtara SiCOke Ọkụ Na-eme Ka Ọ Dị Mma
Ọkwa okpomọkụ ruo ~370 W/m·K na-eme ka mwepụ okpomọkụ dị irè, na-eme ka ntụkwasị obi na njupụta ike nke ngwaọrụ dịkwuo elu.
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Ihe mejupụtara SiCNgwa Ebumnuche
SiC MOSFETs, Schottky diodes, modulu ike na ngwaọrụ RF maka draịva ụgbọala eletrik, inverters anyanwụ, draịva ụlọ ọrụ mmepụta ihe, sistemụ traction, na ahịa eletriki ndị ọzọ na-achọsi ike.
Nkọwapụta nke wafer SiC ụdị 4H-N nke dị sentimita 6 | ||
| Akụ na ụba | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Ọkwa | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Dayameta | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Nhazi Wafer | N'akụkụ axis: 4.0° gaa <1120> ± 0.5° | N'akụkụ axis: 4.0° gaa <1120> ± 0.5° |
| Njupụta nke paịpụ micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Nguzogide | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Nhazi Ala Dị Elu nke Mbụ | [10-10] ± 50° | [10-10] ± 50° |
| Ogologo Dị larịị nke Mbụ | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Mwepu nke Ọnụọgụ | 3 mm | 3 mm |
| LTV/TIV / Ụta / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Isi ike | Ra nke Poland ≤ 1 nm | Ra nke Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mgbawa Ọkụ Site na Ọkụ Ike Dị Elu | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm |
| Efere Hex Site na Ìhè Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 0.1% |
| Ebe Polytype Site na Ọkụ Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 3% |
| Ihe Ndị A Na-ahụ Anya Banyere Carbon | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 5% |
| Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike | Ogologo mkpokọta ≤ 1 dayameta wafer | |
| Iberibe Edge site na High Intensity Light | Ọ dịghị ihe a na-ekwe ka ≥ obosara na omimi nke 0.2 mm | 7 enyere ikike, ≤ 1 mm nke ọ bụla |
| Mgbasa nke Skrọ Eriri | < 500 cm³ | < 500 cm³ |
| Mmetọ Elu Silikọn Site na Ìhè Dị Ike | ||
| Nkwakọ ngwaahịa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa |
Nkọwapụta nke ụdị wafer SiC nke 4H-N nke 8inch | ||
| Akụ na ụba | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Ọkwa | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Dayameta | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Nhazi Wafer | 4.0° gaa <110> ± 0.5° | 4.0° gaa <110> ± 0.5° |
| Njupụta nke paịpụ micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Nguzogide | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Nhazi Dị Nsọpụrụ | ||
| Mwepu nke Ọnụọgụ | 3 mm | 3 mm |
| LTV/TIV / Ụta / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Isi ike | Ra nke Poland ≤ 1 nm | Ra nke Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mgbawa Ọkụ Site na Ọkụ Ike Dị Elu | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm |
| Efere Hex Site na Ìhè Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 0.1% |
| Ebe Polytype Site na Ọkụ Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 3% |
| Ihe Ndị A Na-ahụ Anya Banyere Carbon | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 5% |
| Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike | Ogologo mkpokọta ≤ 1 dayameta wafer | |
| Iberibe Edge site na High Intensity Light | Ọ dịghị ihe a na-ekwe ka ≥ obosara na omimi nke 0.2 mm | 7 enyere ikike, ≤ 1 mm nke ọ bụla |
| Mgbasa nke Skrọ Eriri | < 500 cm³ | < 500 cm³ |
| Mmetọ Elu Silikọn Site na Ìhè Dị Ike | ||
| Nkwakọ ngwaahịa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa |
4H-SiC bụ ihe eji arụ ọrụ dị elu nke e ji eme ihe maka eletrọniki ike, ngwaọrụ RF, na ngwa okpomọkụ dị elu. "4H" na-ezo aka na nhazi kristal, nke bụ hexagonal, "N" na-egosikwa ụdị doping eji eme ka arụmọrụ ihe ahụ ka mma.
Ihe4H-SiCA na-ejikarị ụdị maka:
Ngwa eletrọniki ike:A na-eji ya na ngwaọrụ dịka diode, MOSFETs, na IGBTs maka ụgbọ okporo ígwè eletrik, igwe ụlọ ọrụ mmepụta ihe, na sistemụ ike mmeghari ohuru.
Teknụzụ 5G:Site na ọchịchọ 5G maka ihe ndị dị elu na nke dị elu, ikike SiC nwere ijikwa voltaji dị elu ma rụọ ọrụ na okpomọkụ dị elu na-eme ka ọ dị mma maka amplifiers ike ọdụ isi na ngwaọrụ RF.
Sistemụ Ike Anyanwụ:Njirimara njikwa ike dị mma nke SiC dị mma maka inverters na converters photovoltaic (ike anyanwụ).
Ụgbọala eletriki (EV):A na-eji SiC eme ihe nke ukwuu na EV powertrains maka mgbanwe ike dị irè karị, mmepụta okpomọkụ dị ala, na njupụta ike dị elu.
Njirimara na ngwa nke ụdị SiC Substrate 4H Semi-insulating
Njirimara:
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Usoro njikwa njupụta na-enweghị micropipe: Na-eme ka ọ dị mma na enweghị obere ọkpọkọ, na-eme ka mma nke ihe ndị dị n'ime ya dịkwuo mma.
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Usoro njikwa monocrystalline: Na-ekwe nkwa otu nhazi kristal maka ihe onwunwe emelitere.
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Usoro njikwa ihe ndị dị mkpa: Na-ebelata ọnụnọ nke ihe ndị na-adịghị ọcha ma ọ bụ ihe ndị e tinyere na ya, na-eme ka ihe dị ọcha dị na ya.
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Usoro njikwa iguzogide ọrịa: Na-enye ohere maka njikwa ziri ezi nke iguzogide eletriki, nke dị oke mkpa maka arụmọrụ ngwaọrụ.
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Usoro njikwa na iwu adịghị ọcha: Na-achịkwa ma na-egbochi itinye ihe ndị na-adịghị ọcha n'ime ihe ndị dị n'ime ihe ahụ iji nọgide na-eguzosi ike n'ihe.
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Usoro njikwa obosara nzọụkwụ ala: Na-enye njikwa ziri ezi n'obosara nzọụkwụ, na-ahụ na nhazi zuru oke n'ofe ihe ahụ
Nkọwapụta ihe mejupụtara 4H-ọkara SiC nke 6Inch | ||
| Akụ na ụba | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Dayameta (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ (um) | 500 ± 15 | 500 ± 25 |
| Nhazi Wafer | N'akụkụ: ±0.0001° | N'akụkụ: ±0.05° |
| Njupụta nke paịpụ micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Nguzogide (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Nhazi Ala Dị Elu nke Mbụ | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ogologo Dị larịị nke Mbụ | Ọkpụkpọ | Ọkpụkpọ |
| Mwepụ nke N'akụkụ (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Efere / Warp | ≤ 3 µm | ≤ 3 µm |
| Isi ike | Polish Ra ≤ 1.5 µm | Polish Ra ≤ 1.5 µm |
| Iberibe Edge site na High Intensity Light | ≤ 20 µm | ≤ 60 µm |
| Efere Okpomọkụ Site na Ọkụ Ike Dị Elu | Ngụkọta ≤ 0.05% | Ngụkọta ≤ 3% |
| Ebe Polytype Site na Ọkụ Dị Ike | Ihe Ndị A Na-ahụ Anya Maka Carbon ≤ 0.05% | Ngụkọta ≤ 3% |
| Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike | ≤ 0.05% | Ngụkọta ≤ 4% |
| Iberibe Ọkụ Dị Ike (Nha) | Anaghị ekwe ka > 02 mm Obosara na Omimi | Anaghị ekwe ka > 02 mm Obosara na Omimi |
| Mgbasa nke Skruu Enyemaka | ≤ 500 µm | ≤ 500 µm |
| Mmetọ Elu Silikọn Site na Ìhè Dị Ike | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Nkwakọ ngwaahịa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu Wafer Container | Kaseti nwere ọtụtụ wafer ma ọ bụ otu Wafer Container |
Nkọwapụta SiC nke dị sentimita 4 nke nwere ihe mkpuchi ọkara
| Paramita | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
|---|---|---|
| Njirimara Anụ Ahụ | ||
| Dayameta | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Nhazi Wafer | N'akụkụ: <600h > 0.5° | N'akụkụ: <000h > 0.5° |
| Njirimara Ọdụdọ Eletriki | ||
| Njupụta nke paịpụ micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Nguzogide | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Nkwenye nke Geometric | ||
| Nhazi Ala Dị Elu nke Mbụ | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Ogologo Dị larịị nke Mbụ | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ogologo Dị larịị nke Abụọ | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Nhazi nke Abụọ nke Dị larịị | 90° CW site na Prime flat ± 5.0° (Si ihu elu) | 90° CW site na Prime flat ± 5.0° (Si ihu elu) |
| Mwepu nke Ọnụọgụ | 3 mm | 3 mm |
| LTV / TTV / Ụta / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ogo Elu | ||
| Ọdịdị siri ike n'elu (Polish Ra) | ≤1 nm | ≤1 nm |
| Ọdịdị Dị Ike n'elu (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Mgbawa Ọnụ (Ọkụ siri ike) | Anabataghị ya | Ogologo mkpokọta ≥10 mm, otu mgbawa ≤2 mm |
| Nrụhie Efere Hexagonal | ≤0.05% mpaghara nchịkọta | ≤0.1% mpaghara nchịkọta |
| Ebe Ndị A Na-etinye Polytype | Anabataghị ya | Mpaghara mkpokọta ≤1% |
| Ihe Ndị A Na-ahụ Anya Banyere Carbon | ≤0.05% mpaghara nchịkọta | Mpaghara mkpokọta ≤1% |
| Ihe ndị e ji akpụcha elu silikọn | Anabataghị ya | Ogologo mkpokọta nke dayameta wafer ≤1 |
| Ibe Ọkụkọ | A naghị ekwe ka ọ bụrụ ihe a na-anabata (≥0.2 mm obosara/omimi) | ≤5 ibe (nke ọ bụla ≤1 mm) |
| Mmetọ Elu Silicon | Akọwapụtaghị ya | Akọwapụtaghị ya |
| Nkwakọ ngwaahịa | ||
| Nkwakọ ngwaahịa | Kaseti ọtụtụ wafer ma ọ bụ akpa wafer otu-wafer | Kaseti ọtụtụ wafer ma ọ bụ |
Ngwa:
IheIhe ndị na-egbochi ihe mkpuchi ọkara SiC 4HA na-ejikarị ya eme ihe na ngwaọrụ eletrọniki dị elu na nke dị elu, ọkachasị naMpaghara RFIhe ndị a dị oke mkpa maka ọtụtụ ngwa gụnyeresistemụ nkwukọrịta microwave, radar usoro nhazi nke usoro, naihe nchọpụta eletriki ikukuOke ike ha na-arụ ọrụ nke ọma na njirimara eletriki dị mma na-eme ka ha dị mma maka ojiji siri ike na ngwa eletrọniki ike na sistemụ nkwukọrịta.
Njirimara na ojiji nke ụdị SiC epi wafer 4H-N
Njirimara na Ngwa nke SiC 4H-N Ụdị Epi Wafer
Njirimara nke SiC 4H-N Ụdị Epi Wafer:
Ihe mejupụtara ihe:
SiC (Silikọn Carbide): A maara SiC maka ike ya pụrụ iche, ike okpomọkụ dị elu, na ikike eletriki dị mma, ọ dị mma maka ngwaọrụ eletrọniki dị elu.
Ụdị Polytype 4H-SiC: A maara ụdị polytype 4H-SiC maka arụmọrụ dị elu na nkwụsi ike ya na ngwa eletrọniki.
N-ụdị Doping: N-ụdị doping (e tinyere nitrogen) na-enye ezigbo ngagharị elektrọn, na-eme ka SiC dabara adaba maka ngwa ugboro ugboro na ike dị elu.
Oke Ọkụ Na-eme Ka Ọ Dọpụta:
Wafers SiC nwere ike ime ka okpomọkụ dịkwuo elu, nke na-abụkarị site na120–200 W/m·K, na-enye ha ohere ijikwa okpomọkụ nke ọma na ngwaọrụ ndị nwere ike dị elu dịka transistors na diode.
Oghere sara mbara:
Na bandgap nke3.26 eV, 4H-SiC nwere ike ịrụ ọrụ na voltaji, ugboro ugboro, na okpomọkụ dị elu ma e jiri ya tụnyere ngwaọrụ ndị dabere na silicon ọdịnala, na-eme ka ọ dị mma maka ngwa arụmọrụ dị elu na arụmọrụ dị elu.
Njirimara eletriki:
Ike elektrọn dị elu nke SiC na njikwa elektrọn na-eme ka ọ dị mma makangwa eletrọniki ike, na-enye ọsọ mgbanwe ngwa ngwa na ikike njikwa ọkụ eletrik dị elu na voltaji, na-eme ka sistemụ njikwa ike dịkwuo irè.
Nguzogide Mechanical na Chemical:
SiC bụ otu n'ime ihe ndị siri ike, nke abụọ karịa diamond, ọ na-eguzogide oke oxidation na corrosion, nke na-eme ka ọ sie ike n'ebe siri ike.
Ngwa nke SiC 4H-N Ụdị Epi Wafer:
Ngwa eletrọniki ike:
A na-ejikarị wafers ụdị SiC 4H-N eme ihe n'ọtụtụ ebe naike MOSFET, IGBTs, nadiodemakantụgharị iken'ime sistemụ dịkandị na-agbanwe anyanwụ, ụgbọala eletrik, nasistemụ nchekwa ike, na-enye arụmọrụ ka mma na arụmọrụ ike.
Ụgbọala eletriki (EV):
In ụgbọ okporo ígwè eletrik, ndị na-achịkwa moto, naọdụ chaja, Wafers SiC na-enyere aka nweta arụmọrụ batrị ka mma, chaja ngwa ngwa, na arụmọrụ ike ka mma n'ozuzu ya n'ihi ikike ha nwere ijikwa ike na okpomọkụ dị elu.
Sistemụ Ike Mmegharị Ọhụrụ:
Ndị na-agbanwe anyanwụA na-eji wafer SiC eme ihe nasistemụ ike anyanwụmaka ịtụgharị ike DC site na panel anyanwụ gaa na AC, na-eme ka arụmọrụ sistemụ na arụmọrụ ya dịkwuo elu.
Turbine ikukuA na-eji teknụzụ SiC eme ihe nasistemụ njikwa turbine ifufe, ime ka mmepụta ike na arụmọrụ ntụgharị dịkwuo mma.
Ụgbọelu na Nchebe:
Wafers SiC dị mma maka ojiji nangwa eletrọniki aerospacenangwa agha, gụnyeresistemụ radarnaeletrọniki satịlaịtị, ebe oke iguzogide radieshon na nkwụsi ike okpomọkụ dị oke mkpa.
Ngwa Okpomọkụ Dị Elu na Ugboro Dị Elu:
Wafers SiC dị oke mmangwa eletrọniki dị elu, ejiri mee ihe nainjin ụgbọelu, mbara igwe, nasistemụ kpo oku ụlọ ọrụ mmepụta ihe, ebe ha na-arụ ọrụ nke ọma n'ọnọdụ okpomọkụ dị oke njọ. Na mgbakwunye, nnukwu bandgap ha na-enye ohere maka ojiji nangwa ugboro ugboro dị eludị kaNgwaọrụ RFnankwukọrịta microwave.
| Nkọwapụta axial nke ụdị N-ụdị epit nke sentimita isii | |||
| Paramita | otu | Z-MOS | |
| Ụdị | Omume / Dopant | - | Ụdị N / Nitrogen |
| Ihe nchekwa oyi akwa | Ọkpụrụkpụ nke ihe nchekwa | um | 1 |
| Nchekwa oyi akwa ọkpụrụkpụ | % | ±20% | |
| Ntinye Uche nke Laịnụ Nchekwa | cm-3 | 1.00E+18 | |
| Nchekwa Nchekwa Layer Ntachi Obi | % | ±20% | |
| Akpa Epi nke Mbụ | Ọkpụrụkpụ nke Epi Layer | um | 11.5 |
| Ọkpụrụkpụ Epi Layer | % | ±4% | |
| Njikere Ibu nke Epi ((Spec- Oke, Nkeji)/Nkọwapụta) | % | ±5% | |
| Ntinye Aka Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Nnwere Onwe nke Epi Layer Concentration | % | 6% | |
| Otu esi etinye uche n'otu oyi akwa Epi Layer (σ) /nkezi) | % | ≤5% | |
| Nha nhata nke Epi Layer <(kachasị-nkeji)/(kachasị+nkeji> | % | ≤ 10% | |
| Ọdịdị Wafer Epitaixal | Ụta | um | ≤±20 |
| WARP | um | ≤30 | |
| TV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Àgwà Izugbe | Ogologo ọkọ | mm | ≤30mm |
| Ibe Ọkụkọ | - | Ọ DỊGHỊ | |
| Nkọwa nke ntụpọ | ≥97% (A tụrụ ya na 2 * 2, Mmebi ndị na-egbu egbu gụnyere: Mmebi gụnyere Obere paịpụ /Oghere buru ibu, Karọt, Triangular | ||
| Mmetọ ígwè | atọm/cm² | d f f ll m ≤5E10 atọm/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca naMn) | |
| Ngwugwu | Nkọwapụta nkwakọ ngwaahịa | PC/igbe | cassette nwere ọtụtụ wafer ma ọ bụ otu wafer |
| Nkọwapụta epitaxial nke ụdị N nke sentimita 8 | |||
| Paramita | otu | Z-MOS | |
| Ụdị | Omume / Dopant | - | Ụdị N / Nitrogen |
| Akwa nchekwa | Ọkpụrụkpụ nke ihe nchekwa | um | 1 |
| Nchekwa oyi akwa ọkpụrụkpụ | % | ±20% | |
| Ntinye Uche nke Laịnụ Nchekwa | cm-3 | 1.00E+18 | |
| Nchekwa Nchekwa Layer Ntachi Obi | % | ±20% | |
| Akpa Epi nke Mbụ | Ọkpụrụkpụ nke Epi Layers | um | 8~ 12 |
| Ọkpụrụkpụ nke Epi Layers Otu (σ/nkezi) | % | ≤2.0 | |
| Njikere Ibu nke Epi ((Nkọwapụta -Max, Min)/Nkọwapụta) | % | ±6 | |
| Epi Layers Net Nkezi Doping | cm-3 | 8E+15 ~2E+16 | |
| Otu esi etinye ihe n'ime otu oyi akwa Epi (σ/mkpụrụ) | % | ≤5 | |
| Ntanye Doping nke Epi Layers((Spec -Max，) | % | ± 10.0 | |
| Ọdịdị Wafer Epitaixal | Mi )/S ) Warp | um | ≤50.0 |
| Ụta | um | ± 30.0 | |
| TV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Izugbe Àgwà | Akpụkpọ | - | Ogologo mkpokọta ≤ 1/2 Dayameta Wafer |
| Ibe Ọkụkọ | - | ≤2 ibe, radius ọ bụla ≤1.5mm | |
| Mmetọ nke ọla dị n'elu | atọm/cm2 | ≤5E10 atọm/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca naMn) | |
| Nnyocha ntụpọ | % | ≥ 96.0 (Nrụpụ 2X2 gụnyere Micropipe/Oghere buru ibu, Karọt, ntụpọ triangle, ọdịda, Linear/IGSF-s, BPD) | |
| Mmetọ nke ọla dị n'elu | atọm/cm2 | ≤5E10 atọm/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca naMn) | |
| Ngwugwu | Nkọwapụta nkwakọ ngwaahịa | - | cassette nwere ọtụtụ wafer ma ọ bụ otu wafer |
Ajụjụ na Azịza nke SiC wafer
Q1: Kedu uru dị na iji wafer SiC karịa wafer silicon ọdịnala na ngwa eletrọniki ike?
A1:
Wafers SiC na-enye ọtụtụ uru dị mkpa karịa wafers silicon (Si) ọdịnala na ngwa eletrọniki ike, gụnyere:
Arụmọrụ Ka Elu: SiC nwere bandgap sara mbara (3.26 eV) ma e jiri ya tụnyere silicon (1.1 eV), nke na-enye ngwaọrụ ohere ịrụ ọrụ na voltaji dị elu, ugboro ugboro, na okpomọkụ. Nke a na-eduga na mbelata ike na arụmọrụ dị elu na sistemụ ntụgharị ike.
Oke Ọkụ Na-eduzi Ya: Ọkwa okpomọkụ nke SiC dị elu karịa nke silicon, na-eme ka ọ dị mma ka ọkụ gbasaa n'oge a na-eji ike dị elu, nke na-eme ka ntụkwasị obi na ndụ nke ngwaọrụ ike dịkwuo mma.
Njikwa Voltaji Ka Elu na Njikwa Ugbu a: Ngwaọrụ SiC nwere ike ijikwa ọkwa voltaji dị elu na nke ugbu a, na-eme ka ha dabara adaba maka ngwa ike dị elu dịka ụgbọ ala eletrik, sistemụ ike mmeghari ohuru, na draịva moto ụlọ ọrụ mmepụta ihe.
Ọsọ Mgbanwe Ngwa Ngwa: Ngwaọrụ SiC nwere ikike ịgbanwe ngwa ngwa, nke na-enyere aka belata mfu ike na nha sistemụ, na-eme ka ha dị mma maka ngwa ugboro ugboro.
Q2: Kedu ihe bụ isi eji SiC wafers eme ihe n'ụlọ ọrụ ụgbọala?
A2:
N'ime ụlọ ọrụ ụgbọ ala, a na-ejikarị wafer SiC eme ihe na:
Ụgbọala eletriki (EV) Powertrains: Ihe ndị dabere na SiC dịkandị na-agbanwe ihenaike MOSFETmelite arụmọrụ na arụmọrụ nke powertrains ụgbọ ala eletrik site n'ime ka ọsọ mgbanwe ngwa ngwa na njupụta ike dị elu. Nke a na-eduga na ndụ batrị dị ogologo na arụmọrụ ka mma nke ụgbọ ala n'ozuzu ya.
Chaja Ndị Dị n'ObodoNgwaọrụ SiC na-enyere aka imeziwanye arụmọrụ nke sistemụ chaja n'ime ụgbọ site n'inyere aka ime ka oge chaja ngwa ngwa na njikwa okpomọkụ ka mma, nke dị oke mkpa maka EVs iji kwado ọdụ chaja ike dị elu.
Sistemụ Njikwa Batrị (BMS)Teknụzụ SiC na-eme ka arụmọrụ nkesistemụ njikwa batrị, na-enye ohere maka njikwa voltaji ka mma, njikwa ike dị elu, na ndụ batrị dị ogologo.
Ndị na-agbanwe DC-DCA na-eji wafer SiC eme ihe naNdị na-agbanwe DC-DCiji gbanwee ike DC dị elu ka ọ bụrụ ike DC dị ala nke ọma, nke dị oke mkpa n'ụgbọala eletrik iji jikwaa ike site na batrị gaa na akụkụ dị iche iche dị n'ụgbọala ahụ.
Arụmọrụ kachasị elu nke SiC na ngwa voltaji dị elu, okpomọkụ dị elu, na arụmọrụ dị elu na-eme ka ọ dị mkpa maka mgbanwe ụlọ ọrụ ụgbọala gaa na mmegharị eletrik.
Nkọwapụta nke wafer SiC ụdị 4H-N nke dị sentimita 6 | ||
| Akụ na ụba | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Ọkwa | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Dayameta | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Nhazi Wafer | N'akụkụ axis: 4.0° gaa <1120> ± 0.5° | N'akụkụ axis: 4.0° gaa <1120> ± 0.5° |
| Njupụta nke paịpụ micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Nguzogide | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Nhazi Ala Dị Elu nke Mbụ | [10-10] ± 50° | [10-10] ± 50° |
| Ogologo Dị larịị nke Mbụ | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Mwepu nke Ọnụọgụ | 3 mm | 3 mm |
| LTV/TIV / Ụta / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Isi ike | Ra nke Poland ≤ 1 nm | Ra nke Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mgbawa Ọkụ Site na Ọkụ Ike Dị Elu | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm |
| Efere Hex Site na Ìhè Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 0.1% |
| Ebe Polytype Site na Ọkụ Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 3% |
| Ihe Ndị A Na-ahụ Anya Banyere Carbon | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 5% |
| Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike | Ogologo mkpokọta ≤ 1 dayameta wafer | |
| Iberibe Edge site na High Intensity Light | Ọ dịghị ihe a na-ekwe ka ≥ obosara na omimi nke 0.2 mm | 7 enyere ikike, ≤ 1 mm nke ọ bụla |
| Mgbasa nke Skrọ Eriri | < 500 cm³ | < 500 cm³ |
| Mmetọ Elu Silikọn Site na Ìhè Dị Ike | ||
| Nkwakọ ngwaahịa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa |
Nkọwapụta nke ụdị wafer SiC nke 4H-N nke 8inch | ||
| Akụ na ụba | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Ọkwa | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Dayameta | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Nhazi Wafer | 4.0° gaa <110> ± 0.5° | 4.0° gaa <110> ± 0.5° |
| Njupụta nke paịpụ micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Nguzogide | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Nhazi Dị Nsọpụrụ | ||
| Mwepu nke Ọnụọgụ | 3 mm | 3 mm |
| LTV/TIV / Ụta / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Isi ike | Ra nke Poland ≤ 1 nm | Ra nke Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mgbawa Ọkụ Site na Ọkụ Ike Dị Elu | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm | Ogologo mkpokọta ≤ 20 mm otu ogologo ≤ 2 mm |
| Efere Hex Site na Ìhè Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 0.1% |
| Ebe Polytype Site na Ọkụ Dị Ike | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 3% |
| Ihe Ndị A Na-ahụ Anya Banyere Carbon | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 5% |
| Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike | Ogologo mkpokọta ≤ 1 dayameta wafer | |
| Iberibe Edge site na High Intensity Light | Ọ dịghị ihe a na-ekwe ka ≥ obosara na omimi nke 0.2 mm | 7 enyere ikike, ≤ 1 mm nke ọ bụla |
| Mgbasa nke Skrọ Eriri | < 500 cm³ | < 500 cm³ |
| Mmetọ Elu Silikọn Site na Ìhè Dị Ike | ||
| Nkwakọ ngwaahịa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer akpa |
Nkọwapụta ihe mejupụtara 4H-ọkara SiC nke 6Inch | ||
| Akụ na ụba | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
| Dayameta (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ (um) | 500 ± 15 | 500 ± 25 |
| Nhazi Wafer | N'akụkụ: ±0.0001° | N'akụkụ: ±0.05° |
| Njupụta nke paịpụ micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Nguzogide (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Nhazi Ala Dị Elu nke Mbụ | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ogologo Dị larịị nke Mbụ | Ọkpụkpọ | Ọkpụkpọ |
| Mwepụ nke N'akụkụ (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Efere / Warp | ≤ 3 µm | ≤ 3 µm |
| Isi ike | Polish Ra ≤ 1.5 µm | Polish Ra ≤ 1.5 µm |
| Iberibe Edge site na High Intensity Light | ≤ 20 µm | ≤ 60 µm |
| Efere Okpomọkụ Site na Ọkụ Ike Dị Elu | Ngụkọta ≤ 0.05% | Ngụkọta ≤ 3% |
| Ebe Polytype Site na Ọkụ Dị Ike | Ihe Ndị A Na-ahụ Anya Maka Carbon ≤ 0.05% | Ngụkọta ≤ 3% |
| Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike | ≤ 0.05% | Ngụkọta ≤ 4% |
| Iberibe Ọkụ Dị Ike (Nha) | Anaghị ekwe ka > 02 mm Obosara na Omimi | Anaghị ekwe ka > 02 mm Obosara na Omimi |
| Mgbasa nke Skruu Enyemaka | ≤ 500 µm | ≤ 500 µm |
| Mmetọ Elu Silikọn Site na Ìhè Dị Ike | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Nkwakọ ngwaahịa | Kaseti nwere ọtụtụ wafer ma ọ bụ otu Wafer Container | Kaseti nwere ọtụtụ wafer ma ọ bụ otu Wafer Container |
Nkọwapụta SiC nke dị sentimita 4 nke nwere ihe mkpuchi ọkara
| Paramita | Ọkwa Mmepụta MPD efu (Ọkwa Z) | Akara D (Ọkwa D) |
|---|---|---|
| Njirimara Anụ Ahụ | ||
| Dayameta | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Ụdị poly-type | 4H | 4H |
| Ọkpụrụkpụ | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Nhazi Wafer | N'akụkụ: <600h > 0.5° | N'akụkụ: <000h > 0.5° |
| Njirimara Ọdụdọ Eletriki | ||
| Njupụta nke paịpụ micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Nguzogide | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Nkwenye nke Geometric | ||
| Nhazi Ala Dị Elu nke Mbụ | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Ogologo Dị larịị nke Mbụ | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ogologo Dị larịị nke Abụọ | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Nhazi nke Abụọ nke Dị larịị | 90° CW site na Prime flat ± 5.0° (Si ihu elu) | 90° CW site na Prime flat ± 5.0° (Si ihu elu) |
| Mwepu nke Ọnụọgụ | 3 mm | 3 mm |
| LTV / TTV / Ụta / Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ogo Elu | ||
| Ọdịdị siri ike n'elu (Polish Ra) | ≤1 nm | ≤1 nm |
| Ọdịdị Dị Ike n'elu (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Mgbawa Ọnụ (Ọkụ siri ike) | Anabataghị ya | Ogologo mkpokọta ≥10 mm, otu mgbawa ≤2 mm |
| Nrụhie Efere Hexagonal | ≤0.05% mpaghara nchịkọta | ≤0.1% mpaghara nchịkọta |
| Ebe Ndị A Na-etinye Polytype | Anabataghị ya | Mpaghara mkpokọta ≤1% |
| Ihe Ndị A Na-ahụ Anya Banyere Carbon | ≤0.05% mpaghara nchịkọta | Mpaghara mkpokọta ≤1% |
| Ihe ndị e ji akpụcha elu silikọn | Anabataghị ya | Ogologo mkpokọta nke dayameta wafer ≤1 |
| Ibe Ọkụkọ | A naghị ekwe ka ọ bụrụ ihe a na-anabata (≥0.2 mm obosara/omimi) | ≤5 ibe (nke ọ bụla ≤1 mm) |
| Mmetọ Elu Silicon | Akọwapụtaghị ya | Akọwapụtaghị ya |
| Nkwakọ ngwaahịa | ||
| Nkwakọ ngwaahịa | Kaseti ọtụtụ wafer ma ọ bụ akpa wafer otu-wafer | Kaseti ọtụtụ wafer ma ọ bụ |
| Nkọwapụta axial nke ụdị N-ụdị epit nke sentimita isii | |||
| Paramita | otu | Z-MOS | |
| Ụdị | Omume / Dopant | - | Ụdị N / Nitrogen |
| Ihe nchekwa oyi akwa | Ọkpụrụkpụ nke ihe nchekwa | um | 1 |
| Nchekwa oyi akwa ọkpụrụkpụ | % | ±20% | |
| Ntinye Uche nke Laịnụ Nchekwa | cm-3 | 1.00E+18 | |
| Nchekwa Nchekwa Layer Ntachi Obi | % | ±20% | |
| Akpa Epi nke Mbụ | Ọkpụrụkpụ nke Epi Layer | um | 11.5 |
| Ọkpụrụkpụ Epi Layer | % | ±4% | |
| Njikere Ibu nke Epi ((Spec- Oke, Nkeji)/Nkọwapụta) | % | ±5% | |
| Ntinye Aka Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Nnwere Onwe nke Epi Layer Concentration | % | 6% | |
| Otu esi etinye uche n'otu oyi akwa Epi Layer (σ) /nkezi) | % | ≤5% | |
| Nha nhata nke Epi Layer <(kachasị-nkeji)/(kachasị+nkeji> | % | ≤ 10% | |
| Ọdịdị Wafer Epitaixal | Ụta | um | ≤±20 |
| WARP | um | ≤30 | |
| TV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Àgwà Izugbe | Ogologo ọkọ | mm | ≤30mm |
| Ibe Ọkụkọ | - | Ọ DỊGHỊ | |
| Nkọwa nke ntụpọ | ≥97% (A tụrụ ya na 2 * 2, Mmebi ndị na-egbu egbu gụnyere: Mmebi gụnyere Obere paịpụ /Oghere buru ibu, Karọt, Triangular | ||
| Mmetọ ígwè | atọm/cm² | d f f ll m ≤5E10 atọm/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca naMn) | |
| Ngwugwu | Nkọwapụta nkwakọ ngwaahịa | PC/igbe | cassette nwere ọtụtụ wafer ma ọ bụ otu wafer |
| Nkọwapụta epitaxial nke ụdị N nke sentimita 8 | |||
| Paramita | otu | Z-MOS | |
| Ụdị | Omume / Dopant | - | Ụdị N / Nitrogen |
| Akwa nchekwa | Ọkpụrụkpụ nke ihe nchekwa | um | 1 |
| Nchekwa oyi akwa ọkpụrụkpụ | % | ±20% | |
| Ntinye Uche nke Laịnụ Nchekwa | cm-3 | 1.00E+18 | |
| Nchekwa Nchekwa Layer Ntachi Obi | % | ±20% | |
| Akpa Epi nke Mbụ | Ọkpụrụkpụ nke Epi Layers | um | 8~ 12 |
| Ọkpụrụkpụ nke Epi Layers Otu (σ/nkezi) | % | ≤2.0 | |
| Njikere Ibu nke Epi ((Nkọwapụta -Max, Min)/Nkọwapụta) | % | ±6 | |
| Epi Layers Net Nkezi Doping | cm-3 | 8E+15 ~2E+16 | |
| Otu esi etinye ihe n'ime otu oyi akwa Epi (σ/mkpụrụ) | % | ≤5 | |
| Ntanye Doping nke Epi Layers((Spec -Max，) | % | ± 10.0 | |
| Ọdịdị Wafer Epitaixal | Mi )/S ) Warp | um | ≤50.0 |
| Ụta | um | ± 30.0 | |
| TV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Izugbe Àgwà | Akpụkpọ | - | Ogologo mkpokọta ≤ 1/2 Dayameta Wafer |
| Ibe Ọkụkọ | - | ≤2 ibe, radius ọ bụla ≤1.5mm | |
| Mmetọ nke ọla dị n'elu | atọm/cm2 | ≤5E10 atọm/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca naMn) | |
| Nnyocha ntụpọ | % | ≥ 96.0 (Nrụpụ 2X2 gụnyere Micropipe/Oghere buru ibu, Karọt, ntụpọ triangle, ọdịda, Linear/IGSF-s, BPD) | |
| Mmetọ nke ọla dị n'elu | atọm/cm2 | ≤5E10 atọm/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca naMn) | |
| Ngwugwu | Nkọwapụta nkwakọ ngwaahịa | - | cassette nwere ọtụtụ wafer ma ọ bụ otu wafer |
Q1: Kedu uru dị na iji wafer SiC karịa wafer silicon ọdịnala na ngwa eletrọniki ike?
A1:
Wafers SiC na-enye ọtụtụ uru dị mkpa karịa wafers silicon (Si) ọdịnala na ngwa eletrọniki ike, gụnyere:
Arụmọrụ Ka Elu: SiC nwere bandgap sara mbara (3.26 eV) ma e jiri ya tụnyere silicon (1.1 eV), nke na-enye ngwaọrụ ohere ịrụ ọrụ na voltaji dị elu, ugboro ugboro, na okpomọkụ. Nke a na-eduga na mbelata ike na arụmọrụ dị elu na sistemụ ntụgharị ike.
Oke Ọkụ Na-eduzi Ya: Ọkwa okpomọkụ nke SiC dị elu karịa nke silicon, na-eme ka ọ dị mma ka ọkụ gbasaa n'oge a na-eji ike dị elu, nke na-eme ka ntụkwasị obi na ndụ nke ngwaọrụ ike dịkwuo mma.
Njikwa Voltaji Ka Elu na Njikwa Ugbu a: Ngwaọrụ SiC nwere ike ijikwa ọkwa voltaji dị elu na nke ugbu a, na-eme ka ha dabara adaba maka ngwa ike dị elu dịka ụgbọ ala eletrik, sistemụ ike mmeghari ohuru, na draịva moto ụlọ ọrụ mmepụta ihe.
Ọsọ Mgbanwe Ngwa Ngwa: Ngwaọrụ SiC nwere ikike ịgbanwe ngwa ngwa, nke na-enyere aka belata mfu ike na nha sistemụ, na-eme ka ha dị mma maka ngwa ugboro ugboro.
Q2: Kedu ihe bụ isi eji SiC wafers eme ihe n'ụlọ ọrụ ụgbọala?
A2:
N'ime ụlọ ọrụ ụgbọ ala, a na-ejikarị wafer SiC eme ihe na:
Ụgbọala eletriki (EV) Powertrains: Ihe ndị dabere na SiC dịkandị na-agbanwe ihenaike MOSFETmelite arụmọrụ na arụmọrụ nke powertrains ụgbọ ala eletrik site n'ime ka ọsọ mgbanwe ngwa ngwa na njupụta ike dị elu. Nke a na-eduga na ndụ batrị dị ogologo na arụmọrụ ka mma nke ụgbọ ala n'ozuzu ya.
Chaja Ndị Dị n'ObodoNgwaọrụ SiC na-enyere aka imeziwanye arụmọrụ nke sistemụ chaja n'ime ụgbọ site n'inyere aka ime ka oge chaja ngwa ngwa na njikwa okpomọkụ ka mma, nke dị oke mkpa maka EVs iji kwado ọdụ chaja ike dị elu.
Sistemụ Njikwa Batrị (BMS)Teknụzụ SiC na-eme ka arụmọrụ nkesistemụ njikwa batrị, na-enye ohere maka njikwa voltaji ka mma, njikwa ike dị elu, na ndụ batrị dị ogologo.
Ndị na-agbanwe DC-DCA na-eji wafer SiC eme ihe naNdị na-agbanwe DC-DCiji gbanwee ike DC dị elu ka ọ bụrụ ike DC dị ala nke ọma, nke dị oke mkpa n'ụgbọala eletrik iji jikwaa ike site na batrị gaa na akụkụ dị iche iche dị n'ụgbọala ahụ.
Arụmọrụ kachasị elu nke SiC na ngwa voltaji dị elu, okpomọkụ dị elu, na arụmọrụ dị elu na-eme ka ọ dị mkpa maka mgbanwe ụlọ ọrụ ụgbọala gaa na mmegharị eletrik.
Ngwaahịa Ndị Yiri Ya
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