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Gịnị kpatara SiC na-ekpuchi ọkara karịa SiC na-eduzi?
SiC nke na-egbochi ihe mgbochi nwere ike iguzogide ihe dị elu karịa, nke na-ebelata mmiri na-agbapụta n'ime ngwaọrụ voltaji dị elu na nke na-agbagharị ugboro ugboro. SiC nke na-eduzi ihe na-adabara adaba maka ngwa ebe achọrọ ike eletrik. -
Enwere ike iji wafer ndị a mee ihe maka uto epitaxial?
Ee, a na-eji akwa wafer ndị a eme ihe nke ọma ma hazie ha maka MOCVD, HVPE, ma ọ bụ MBE, yana ọgwụgwọ elu na njikwa ntụpọ iji hụ na akwa epitaxial dị mma. -
Kedu ka esi eme ka wafer dị ọcha?
Usoro nhicha ụlọ klaasị-100, nhicha ultrasonic nke nwere ọtụtụ nzọụkwụ, na nkwakọ ngwaahịa nke nwere nitrogen na-ekwe nkwa na wafers ndị ahụ enweghị ihe ruru unyi, ihe fọdụrụ, na obere ọkọ. -
Kedu oge ndu maka iwu?
A na-ebuga ihe nlele n'ime ụbọchị azụmahịa 7-10, ebe a na-ebuga iwu mmepụta n'ime izu 4-6, dabere na nha wafer akọwapụtara na atụmatụ omenala. -
Ị nwere ike ịnye ụdị pụrụ iche?
Ee, anyị nwere ike ịmepụta ihe ndị e ji aka rụọ n'ụdị dị iche iche dịka windo planar, oghere V, lensị okirikiri, na ihe ndị ọzọ.
Ihe mkpuchi silicon carbide (SiC) nke na-eme ka ọ dị ọcha nke ukwuu maka iko Ar
Ihe osise zuru ezu
Nchịkọta Ngwaahịa nke Wafers SiC nke Semi-Insulating
E mepụtara Wafer SiC dị ọcha nke nwere ọkara-mkpuchi maka ngwa eletrọniki ike dị elu, ihe mejupụtara RF/mikrowev, na ngwa optoelectronic. E ji kristal 4H- ma ọ bụ 6H-SiC dị elu mepụta wafer ndị a, site na iji usoro uto Physical Vapor Transport (PVT) a nụchara anụcha, wee soro ya mee ka a na-agbaze ụgwọ ọrụ miri emi. Ihe si na ya pụta bụ wafer nwere ihe ndị a pụrụ iche:
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Nguzogide Dị Elu nke Uhie: ≥1×10¹² Ω·cm, nke na-ebelata mmiri na-agbapụta n'ime ngwaọrụ mgbanwe voltaji dị elu.
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Oghere Band sara mbara (~3.2 eV): Na-eme ka arụmọrụ dị mma n'ebe okpomọkụ dị elu, ebe dị elu, na ebe radieshon siri ike.
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Oke Ọkụ Na-eme Ka Ọ Dị Mma: >4.9 W/cm·K, na-enye mwepụ okpomọkụ dị irè n'ọrụ ike dị elu.
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Ike Mekaniki Kachasị Elu: Site na ike Mohs nke 9.0 (nke abụọ karịa dayamọnd), obere mgbasawanye okpomọkụ, na nkwụsi ike kemịkalụ siri ike.
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Elu Dị Mfe Atọm: Ra < 0.4 nm na njupụta ntụpọ < 1/cm², nke dị mma maka imepụta MOCVD/HVPE epitaxy na micro-nano.
Nha dị: Nha ọkọlọtọ gụnyere 50, 75, 100, 150, na 200 mm (2"–8"), yana dayameta ahaziri ahazi ruo 250 mm.
Oke ọkpụrụkpụ: 200–1,000 μm, nwere ike ịnagide ±5 μm.
Usoro Mmepụta nke Wafers SiC nke Semi-Insulating
Nkwadebe ntụ ntụ SiC dị elu
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Ihe Mmalite: Ntụ ntụ SiC nke ọkwa 6N, nke e ji ọtụtụ usoro ihe mkpofu na ọgwụgwọ okpomọkụ mee ka ọ dị ọcha, na-ahụ na mmetọ ígwè dị ala (Fe, Cr, Ni < 10 ppb) na obere ihe ndị e tinyere na polycrystalline.
Uto Kristal nke Otu-Kristal nke PVT gbanwetụrụ
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Gburugburu Ebe Obibi: Ihe dị nso na oghere ikuku (10⁻³–10⁻² Torr).
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Okpomọkụ: Graphite crucible a na-ekpo ọkụ ruo ~2,500 °C site na iji usoro okpomọkụ a na-achịkwa nke ΔT ≈ 10–20 °C/cm.
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Nhazi Gas na Crucible: Ihe ndị na-ekewapụ ihe mkpuchi na oghere dị iche iche a haziri ahazi na-eme ka uzuoku dị otu ma gbochie nuklita achọghị.
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Nri na ntụgharị dị ike: Ịmegharị ntụ ntụ SiC na ntụgharị kristal site n'oge ruo n'oge na-eme ka njupụta nke ntụpọ dị ala (<3,000 cm⁻²) na nhazi 4H/6H na-aga n'ihu.
Mbelata ụgwọ dị omimi
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Mmiri hydrogen: A na-eme ya n'ime ikuku H₂ n'okpomọkụ dị n'etiti 600–1,400 °C iji mee ka ọnyà dị n'ime ala rụọ ọrụ ma mee ka ndị na-ebu ya kwụsie ike.
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N'agbanyeghị otu esi eji ọgwụ eme ihe (Nhọrọ): Ntinye nke Al (onye na-anabata) na N (onye na-enye onyinye) n'oge uto ma ọ bụ CVD mgbe uto gasịrị iji mepụta ụzọ abụọ kwụsiri ike nke onye na-enye onyinye na onye na-anabata, na-akwalite oke iguzogide.
Ịchacha nke ọma na Ịchacha ọtụtụ ọkwa
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Ịkwa ákwà na waya Daịamọnd: A gbubiri Wafers ruo ọkpụrụkpụ nke 200–1,000 μm, na-enweghị mmebi dị nta na ndidi nke ±5 μm.
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Usoro Ịkwanye Ihe: Ihe ndị na-eme ka diamond dị nro ma dị nro na-ewepụ mmebi osisi, na-akwadebe wafer maka ịchacha.
Ịkpụcha ihe na-eme ka ihe dị n'ime kemịkalụ (CMP)
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Mgbasa Ozi Na-eme Ka Ọcha: Nano-oxide (SiO₂ ma ọ bụ CeO₂) slurry n'ime mmiri alkaline dị nro.
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Njikwa Usoro: Ịchacha obere nrụgide na-ebelata oke ike, na-eme ka oke ike nke RMS dị 0.2–0.4 nm ma na-ewepụ obere ihe ndị na-akpacha.
Nhicha na Nkwakọ ngwaahịa ikpeazụ
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Nhicha Ultrasonic: Usoro nhicha ọtụtụ nzọụkwụ (ihe mgbaze organic, ọgwụgwọ acid/base, na ịsacha mmiri deionized) n'ime gburugburu ebe a na-ehicha ụlọ Class-100.
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Mkpuchi na Nkwakọ ngwaahịa: Ịkpọcha Wafer site na iji nitrogen ehichapụ, mechie ya na akpa nchekwa jupụtara na nitrogen ma tinye ya n'ime igbe mpụta nke na-egbochi mgbanwe, nke na-eme ka mmiri ghara ịdị.
Nkọwapụta nke Wafer SiC Semi-Insulating
| Arụmọrụ Ngwaahịa | Ọkwa P | Ọkwa D |
|---|---|---|
| I. Paramita kristal | I. Paramita kristal | I. Paramita kristal |
| Ụdị kristal | 4H | 4H |
| Ndekọ Refractive a | >2.6 @589nm | >2.6 @589nm |
| Ọnụego Ntinye a | ≤0.5% @450-650nm | ≤1.5% @450-650nm |
| Mbufe MP a (Ekpuchighị ya) | ≥66.5% | ≥66.2% |
| Haze a | ≤0.3% | ≤1.5% |
| Ntinye Polytype a | Anabataghị ya | Mpaghara mkpokọta ≤20% |
| Njupụta nke paịpụ micropipe a | ≤0.5 /cm² | ≤2 /cm² |
| Oghere dị n'akụkụ anọ a | Anabataghị ya | Enweghị |
| Ntinye akụkụ a | Anabataghị ya | Enweghị |
| Ntinye MP a | Anabataghị ya | Enweghị |
| II. Paramita Mekaniki | II. Paramita Mekaniki | II. Paramita Mekaniki |
| Dayameta | 150.0 mm +0.0 mm / -0.2 mm | 150.0 mm +0.0 mm / -0.2 mm |
| Nhazi Elu | {0001} ±0.3° | {0001} ±0.3° |
| Ogologo Dị larịị nke Mbụ | Ọkpụkpọ | Ọkpụkpọ |
| Ogologo Dị larịị nke Abụọ | Enweghị ụlọ nke abụọ | Enweghị ụlọ nke abụọ |
| Nhazi ọkwa | <1-100> ±2° | <1-100> ±2° |
| Nkuku Ọkwa | 90° +5° / -1° | 90° +5° / -1° |
| Omimi Ọkwa | 1 mm site na nsọtụ +0.25 mm / -0.0 mm | 1 mm site na nsọtụ +0.25 mm / -0.0 mm |
| Ọgwụgwọ Elu | Ihu C, Ihu Si: Ịchacha Kemo-Mechanical Polishing (CMP) | Ihu C, Ihu Si: Ịchacha Kemo-Mechanical Polishing (CMP) |
| Ọnụ Wafer | Chamfered (Gburugburu) | Chamfered (Gburugburu) |
| Ike Elu (AFM) (5μm x 5μm) | Si-ihu, C-ihu: Ra ≤ 0.2 nm | Si-ihu, C-ihu: Ra ≤ 0.2 nm |
| Ọkpụrụkpụ a (Tropel) | 500.0 μm ± 25.0 μm | 500.0 μm ± 25.0 μm |
| LTV (Tropel) (40mm x 40mm) a | ≤ 2 μm | ≤ 4 μm |
| Mgbanwe ọkpụrụkpụ zuru oke (TTV) a (Tropel) | ≤ 3 μm | ≤ 5 μm |
| Ụta (Uru zuru oke) a (Tropel) | ≤ 5 μm | ≤ 15 μm |
| Warp a (Tropel) | ≤ 15 μm | ≤ 30 μm |
| III. Paramita Elu | III. Paramita Elu | III. Paramita Elu |
| Chip/Notch | Anabataghị ya | ≤ 2 pcs, ogologo na obosara nke ọ bụla ≤ 1.0 mm |
| Kpụọ a (Si-face, CS8520) | Ogologo ya niile ≤ 1 x Dayameta | Ogologo ya niile ≤ 3 x Dayameta |
| Mkpụrụ akụkụ a (Si-ihu, CS8520) | ≤ 500 pcs | Enweghị |
| Mgbawa | Anabataghị ya | Anabataghị ya |
| Mmetọ a | Anabataghị ya | Anabataghị ya |
Ngwa dị mkpa nke Wafers SiC Semi-Insulating
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Eletrọniki Ike Dị Elu: MOSFETs nke dabeere na SiC, Schottky diodes, na modulu ike maka ụgbọ ala eletrik (EVs) na-erite uru site na ikike SiC dị ala na-eguzogide na ike voltaji dị elu.
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RF na Ngwa Ngwa Ngwa: Arụmọrụ ugboro ugboro na iguzogide radieshon nke SiC dị mma maka amplifiers isi 5G, modulu radar, na nkwukọrịta satịlaịtị.
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Optoelectronics: UV-LED, blue-laser diode, na photodetectors na-eji ihe ndị na-eme ka SiC dị nro na atomic maka uto epitaxial otu.
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Mmetụta Gburugburu Ebe Obibi Dị Oke: Nkwụsi ike nke SiC na okpomọkụ dị elu (>600 °C) na-eme ka ọ dị mma maka ihe mmetụta na gburugburu ebe siri ike, gụnyere turbine gas na ihe nchọpụta nuklia.
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Ụgbọelu na Nchekwa: SiC na-enye ike eletriki ike na satịlaịtị, sistemụ ngwa agha, na ngwa eletrọniki ụgbọelu.
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Nnyocha Dị Elu: Ngwọta ahaziri ahazi maka kọmputa quantum, micro-optics, na ngwa nyocha pụrụ iche ndị ọzọ.
Ajụjụ Ndị A Na-ajụkarị
Gbasara anyị
XKH bụ ọkachamara n'ihe gbasara mmepe teknụzụ dị elu, mmepụta, na ire nke iko anya pụrụ iche na ihe kristal ọhụrụ. Ngwaahịa anyị na-enye ngwa eletrọnịkị anya, ngwa eletrọnịkị ndị ahịa, na ndị agha. Anyị na-enye ihe ndị mejupụtara anya Sapphire, mkpuchi anya ekwentị mkpanaaka, seramiiki, LT, Silicon Carbide SIC, Quartz, na wafers kristal semiconductor. Site na ahụmịhe ọkachamara na ngwa ọgbara ọhụrụ, anyị na-eme nke ọma na nhazi ngwaahịa na-abụghị ọkọlọtọ, na-achọ ịbụ ụlọ ọrụ teknụzụ dị elu nke ihe optoelectronic.
