Usoro CVD maka imepụta ihe eji arụ ọrụ SiC dị ọcha nke ukwuu n'ime ọkụ silikọn carbide na 1600℃

Nkọwa Dị Mkpirikpi:

Ọkụ mmepụta Silicon carbide (SiC) (CVD). Ọ na-eji teknụzụ Chemical Vapor Deposition (CVD) nye ₄ gas silicon sources (dịka SiH₄, SiCl₄) n'ebe okpomọkụ dị elu ebe ha na-emeghachi omume na isi iyi carbon (dịka C₃H₈, CH₄). Ngwaọrụ dị mkpa maka ịkụ kristal silicon carbide dị ọcha na substrate (graphite ma ọ bụ mkpụrụ SiC). A na-ejikarị teknụzụ a eme ihe maka ịkwadebe SiC single crystal substrate (4H/6H-SiC), nke bụ isi akụrụngwa maka imepụta semiconductor ike (dịka MOSFET, SBD).

Zitere anyị ozi-e

atụmatụ

Ụkpụrụ ọrụ:

1. Ntinye ihe na-ebute ụzọ. A na-agwakọta gas silikọn (dịka SiH₄) na gas carbon (dịka C₃H₈) n'ogo ma tinye ha n'ime ụlọ mmeghachi omume.

2. Oke okpomọkụ na-agbawa agbawa: N'oge okpomọkụ dị elu nke 1500~2300℃, gas na-agbawa agbawa na-emepụta atọm Si na C na-arụ ọrụ.

3. Mmeghachi omume elu: A na-etinye atọm Si na C n'elu ihe ndị dị n'elu ala iji mepụta oyi akwa kristal SiC.

4. Mmụba kristal: Site na njikwa nke ọnọdụ okpomọkụ, mmiri gas na nrụgide, iji nweta uto ntụzịaka n'akụkụ axis c ma ọ bụ axis a.

Isi paramita:

· Okpomọkụ: 1600~2200℃ (>2000℃ maka 4H-SiC)

· Nrụgide: 50~200mbar (nrụgide dị ala iji belata nukliọta gas)

· Oke gas: Si/C≈1.0~1.2 (iji zere nsogbu mmụba Si ma ọ bụ C)

Isi atụmatụ:

(1) Ogo kristal
Njupụta ntụpọ dị ala: njupụta microtubule < 0.5cm ⁻², njupụta dislocation < 10⁴ cm⁻².

Njikwa ụdị polycrystalline: nwere ike itolite 4H-SiC (isi iyi), 6H-SiC, 3C-SiC na ụdị kristal ndị ọzọ.

(2) Arụmọrụ akụrụngwa
Okpomọkụ dị elu: ọkụ ọkụ graphite ma ọ bụ ikpo ọkụ iguzogide, okpomọkụ > 2300℃.

Njikwa otu: mgbanwe okpomọkụ ±5℃, ọnụego uto 10~50μm/h.

Sistemụ gas: Igwe nhazi oke ọkụ dị elu (MFC), ịdị ọcha gas ≥99.999%.

(3) Uru teknụzụ
Ịdị ọcha dị elu: Njupụta nke adịghị ọcha n'azụ <10¹⁶ cm⁻³ (N, B, wdg).

Nnukwu nha: Kwado uto SiC nke 6 "/8".

(4) Oriri ike na ọnụ ahịa
Oke oriri ike (200 ~ 500kW·h kwa ọkụ), nke ruru 30% ~ 50% nke ọnụ ahịa mmepụta nke ihe SiC substrate.

Ngwa ndị bụ isi:

1. Ihe nchekwa semiconductor ike: SiC MOSFETs maka imepụta ụgbọala eletrik na inverters fotovoltaic.

2. Ngwaọrụ Rf: Ebe isi 5G GaN-on-SiC epitaxial substrate.

3. Ngwaọrụ gburugburu ebe obibi dị oke egwu: ihe mmetụta okpomọkụ dị elu maka ikuku na ọkụ eletrik nuklia.

Nkọwapụta teknụzụ:

Nkọwapụta	Nkọwa
Nha (L × W × H)	4000 x 3400 x 4300 mm ma ọ bụ hazie ya
Dayameta nke ụlọ ọkụ	1100mm
Ike ibugo	50kg
Oke oghere dị n'ime oghere	10-2Pa (awa 2 mgbe mgbapụta molekul malitere)
Ọnụọgụ mmụba nke nrụgide ụlọ	≤10Pa/h (mgbe a gbasasịrị ya)
Mkpuchi ọkụ dị ala na-ebuli ihe mkpuchi ahụ elu	1500mm
Usoro ikpo ọkụ	Ikpo ọkụ n'ime induction
Okpomọkụ kachasị elu n'ime ọkụ	2400°C
Ike ọkụ	2X40kW
Ntụle okpomọkụ	Nha okpomọkụ infrared agba abụọ
Oke okpomọkụ	900~3000℃
Izi ezi njikwa okpomọkụ	±1°C
Oke nrụgide njikwa	1~700mba
Izi ezi nke njikwa nrụgide	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Usoro nbugo	Ibu ibu dị ala;
Nhazi nhọrọ	Ebe a na-atụ ihe dị ka okpukpu abụọ nke okpomọkụ, na-ebudata forklift.

Ọrụ XKH:

XKH na-enye ọrụ zuru oke maka ọkụ CVD silicon carbide, gụnyere nhazi akụrụngwa (imewe mpaghara okpomọkụ, nhazi sistemụ gas), mmepe usoro (njikwa kristal, njikarịcha ntụpọ), ọzụzụ teknụzụ (ọrụ na mmezi) na nkwado mgbe erechara ahịa (inye akụkụ ndị ọzọ nke ihe ndị dị mkpa, nchọpụta anya) iji nyere ndị ahịa aka inweta mmepụta oke SiC substrate dị elu. Ma nye ọrụ nkwalite usoro iji melite mmepụta kristal na arụmọrụ uto mgbe niile.