Mkpụrụ
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Indium Antimonide (InSb) wafers N ụdị P ụdị Epi dị njikere ewepụghị Te doped ma ọ bụ Ge doped 2inch 3inch 4inch ọkpụrụkpụ Indium Antimonide (InSb) wafers
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SiC wafer 4H-N 6H-N HPSI 4H-ọkara 6H-ọkara 4H-P 6H-P 3C ụdị 2inch 3inch 4inch 6inch 8inch
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sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY Usoro nwere ike ịhazi ya
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GaAs dị elu epitaxial wafer substrate gallium arsenide wafer ike laser wavelength 905nm maka ọgwụgwọ ọgwụgwọ laser.
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vetikal cavity surface emission laser wavelength 940nm otu njikọ.
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2inch 3inch 4inch InP epitaxial wafer substrate APD light detector maka fiber optic nkwukọrịta ma ọ bụ LiDAR
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mgbanaka sapphire ejiri ihe sapphire sịntetik mee nghọta na ike Mohs nwere ike ịhazi ya nke 9
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2 inch Sic silicon carbide substrate 6H-N Ụdị 0.33mm 0.43mm polishing akụkụ abụọ nke elu okpomọkụ conductivity dị ala ike oriri.
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mgbanaka sapphire niile nke ejiri sapphire mebere ya nke ọma site na ihe sapphire mebere ụlọ nyocha.
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Sapphire ingot dia 4inch × 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens nwere nghọta dị elu Al2O3 BK7 JGS1 JGS2 Ngwa ngwa anya ihe.
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SiC mkpụrụ 3inch 350um ọkpụrụkpụ HPSI ụdị Prime Grade dummmy ọkwa