2 inch Silicon Carbide Wafers 6H ma ọ bụ 4H N-ụdị ma ọ bụ Semi-Insulating SiC Substrates
Ngwaahịa akwadoro
4H SiC wafer N-ụdị
Dayameta: 2 inch 50.8mm | 4 anụ ọhịa 100mm | 6 inch 150mm
Nhazi: gbanyụọ axis 4.0˚ chere ihu <1120> ± 0.5˚
Nguzogide: <0.1 ohm.cm
Ihe siri ike: Si-face CMP Ra <0.5nm, C-face polish optical Ra <1 nm
4H SiC wafer Semi-insulating
Dayameta: 2 inch 50.8mm | 4 anụ ọhịa 100mm | 6 inch 150mm
Nhazi: na axis {0001} ± 0.25˚
Nguzogide:>1E5 ohm.cm
Ihe siri ike: Si-face CMP Ra <0.5nm, C-face polish optical Ra <1 nm
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