Silicon carbide diamond waya ịkpụ igwe 4/6/8/12 inch SiC ingot nhazi

Igwe na-egbutu silicon carbide diamond waya 4/6/8/12 inch SiC ingot nhazi onyonyo egosipụtara

Nkọwa dị mkpirikpi:

Igwe eji egbutu silicon carbide Diamond Wire bụ ụdị ngwa nhazi dị elu nke a raara nye na silicon carbide (SiC) ingot slice, na-eji teknụzụ Diamond Wire Saw, site na waya diamond na-agba ọsọ ọsọ (akara dayameta 0.1 ~ 0.3mm) na SiC ingot multi-waya ịkpụ, iji nweta ọkwa dị elu, nkwadebe wafer dị ala. A na-eji ngwa ahụ eme ihe na SiC power semiconductor (MOSFET/SBD), ngwaọrụ redio ugboro ugboro (GaN-on-SiC) na nhazi mkpụrụ ngwaọrụ optoelectronic, bụ isi akụrụngwa na yinye ụlọ ọrụ SiC.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Ụkpụrụ ọrụ:

1. Ingot fixation: SiC ingot (4H / 6H-SiC) na-edozi n'elu ikpo okwu ịkpụ site na ntinye iji hụ na ọnọdụ ziri ezi (± 0.02mm).

2. Diamond line ije: diamond akara (electroplated diamond ahụ n'elu) na-eduzi wheel usoro maka elu-ọsọ mgbasa (akara ọsọ 10 ~ 30m / s).

3. Ịcha nri: a na-enye ingot nri n'akụkụ ntụziaka ahụ, a na-egbutu eriri diamond n'otu oge na ọtụtụ ahịrị ndị yiri ya (100 ~ 500 ahịrị) iji mepụta ọtụtụ wafers.

4. Ntu oyi na mgbawa mgbawa: fesa coolant (mmiri deionized + ihe mgbakwunye) na mpaghara ịkpụ iji belata mmebi okpomọkụ ma wepụ ibe.

Igodo akara:

1. Ịcha ọsọ: 0.2 ~ 1.0mm / min (dabere na ntụziaka kristal na ọkpụrụkpụ nke SiC).

2. Line esemokwu: 20 ~ 50N (oke dị mfe imebi akara, oke ala na-emetụta ịcha ziri ezi).

3.Wafer ọkpụrụkpụ: ọkọlọtọ 350 ~ 500μm, wafer nwere ike iru 100μm.

Isi atụmatụ:

(1) Mbelata izi ezi
Nlegide ịdị arọ: ± 5μm (@350μm wafer), dị mma karịa ịkpụ ngwa agha nkịtị (± 20μm).

Ọdịiche dị n'elu: Ra <0.5μm (enweghị ihe egweri ọzọ achọrọ iji belata ọnụọgụ nhazi na-esote).

Warpage: <10μm (belata ihe isi ike nke polishing na-esote).

(2) Nhazi arụmọrụ
Mbelata ọtụtụ akara: ịkpụ 100 ~ 500 iberibe n'otu oge, na-abawanye ikike mmepụta 3 ~ 5 ugboro (vs. Single line cut).

Ndụ ahịrị: Ahịrị diamond nwere ike belata 100 ~ 300km SiC (dabere na ike ingot na njikarịcha usoro).

(3) Nhazi mmebi dị ala
Njiji ihu: <15μm (mbelata ọdịnala>50μm), kwalite mkpụrụ wafer.

oyi akwa mmebi nke dị n'okpuru ala: <5μm (belata iwepụ polishing).

(4) Nchekwa gburugburu ebe obibi na akụ na ụba
Enweghị mmetọ ngwa agha: Mbelata ego mkpofu mmiri mmiri na-efu efu ma e jiri ya tụnyere igbutu ngwa agha.

Iji ihe eji eme ihe: Mbelata mfu <100μm/ cutter, na-echekwa akụrụngwa SiC.

Mmetụta ịkpụ:

1. Wafer àgwà: ọ dịghị macroscopic cracks n'elu, ole na ole microscopic ntụpọ (nchịkwa dislocation ndọtị). Nwere ike ịbanye ozugbo na njikọ polishing siri ike, belata usoro usoro ahụ.

2. Nkwekọrịta: nkwụsịtụ nke wafer na batch bụ <± 3%, kwesịrị ekwesị maka mmepụta akpaghị aka.

3.Applicability: Nkwado 4H / 6H-SiC ingot ịkpụ, dakọtara na conductive / ọkara mkpuchi ụdị.

Nkọwa nka nka:

Nkọwapụta	Nkọwa
Akụkụ (L × W × H)	2500x2300x2500 ma ọ bụ hazie
Nha nha ihe nhazi	4, 6, 8, 10, 12 inch nke silicon carbide
Ịdị njọ nke elu	Ra≤0.3u
Nkezi ọsọ ọnwụ	0.3mm/min
Ibu	5,5t
Ịcha usoro ntọala nzọụkwụ	≤30 nzọụkwụ
mkpọtụ akụrụngwa	≤80dB
Steel waya esemokwu	0 ~ 110N (0.25 waya esemokwu bụ 45N)
Ọsọ waya ígwè	0 ~ 30m/S
Mkpokọta ike	50kw
Dayameta waya diamond	≥0.18mm
Kwụsị ire ụtọ	≤0.05mm
Ịcha na imebi ọnụego	≤1% (ma e wezụga n'ihi ihe mmadụ kpatara, ihe silicon, ahịrị, mmezi na ihe ndị ọzọ)

Ọrụ XKH:

XKH na-enye dum usoro ọrụ nke silicon carbide diamond waya ọnwụ igwe, gụnyere ngwá nhọrọ (waya dayameta / waya ọsọ kenha), usoro mmepe (ịcha parameter njikarịcha), consumables ọkọnọ (diamond waya, ndu wheel) na mgbe-sales nkwado (nrụzi akụrụngwa, igbucha àgwà analysis), iji nyere ndị ahịa aka nweta nnukwu mkpụrụ (> 95%), ọnụ ala SiC wafer uka mmepụta. Ọ na-enyekwa nkwalite ahaziri ahazi (dị ka igbutu ultra-thin, loading akpaghị aka na nbudata) yana oge ụzọ izu 4-8.