Igwe ịkpụ waya silikọn carbide diamond 4/6/8/12 inch nhazi ingot SiC

Igwe ịkpụ waya silikọn carbide nke nwere waya diamond 4/6/8/12 inch nhazi ingot SiC nke a na-egosipụta Foto a na-egosi

Nkọwa Dị Mkpirikpi:

Igwe ịkpụ waya silikon carbide Diamond bụ ụdị ngwa nhazi dị elu nke raara nye silicon carbide (SiC) ingot slice, na-eji teknụzụ Diamond Wire Saw, site na waya diamond na-agagharị ọsọ ọsọ (dayameta ahịrị 0.1 ~ 0.3mm) ruo na SiC ingot multi-waya cut, iji nweta nkwadebe wafer dị oke mma, nke na-emebi emebi nke ọma. A na-eji ngwa a eme ihe nke ukwuu na semiconductor ike SiC (MOSFET/SBD), ngwaọrụ redio ugboro ugboro (GaN-on-SiC) na nhazi substrate ngwaọrụ optoelectronic, bụ akụrụngwa dị mkpa na usoro ụlọ ọrụ SiC.

Zitere anyị ozi-e

atụmatụ

Ụkpụrụ ọrụ:

1. Ndozi Ingot: A na-etinye SiC ingot (4H/6H-SiC) n'elu ikpo okwu ịkpụ site na ihe nkwụnye ahụ iji hụ na ọnọdụ ya ziri ezi (±0.02mm).

2. Mmegharị ahịrị dayamọnd: ahịrị dayamọnd (ihe ndị e ji elektrọnik mee n'elu) na-eji sistemụ wiil nduzi eme ihe maka mgbasa ọsọ dị elu (ọsọ ahịrị 10 ~ 30m/s).

3. Nri ịkpụ: a na-enye ingot n'akụkụ ebe a na-ahazi ya, a na-ebipụkwa ahịrị dayamọnd n'otu oge na ọtụtụ ahịrị ndị yiri ya (ahịrị 100-500) iji mepụta ọtụtụ wafers.

4. Ịwepụ oyi na mgbawa: Fesa ihe na-ekpo ọkụ (mmiri e tinyere n'ọkụ + ihe mgbakwunye) n'ebe a na-egbutu ya iji belata mmebi okpomọkụ ma wepụ iberibe ahụ.

Isi paramita:

1. Ọsọ ịcha: 0.2~1.0mm/min (dabere na ntụziaka kristal na ọkpụrụkpụ nke SiC).

2. Nsogbu ahịrị: 20~50N (oke elu dị mfe ịgbaji ahịrị, oke obere mmetụta nke izi ezi nke ịkpụ).

3. Ọkpụrụkpụ Wafer: ọkọlọtọ 350 ~ 500μm, wafer nwere ike iru 100μm.

Isi atụmatụ:

(1) Izi ezi nke ịcha
Ntachi obi: ±5μm (@350μm wafer), ọ ka mma karịa ịkpụ ihe e ji kpụọ ngwa agha nkịtị (±20μm).

Ọdịdị elu: Ra<0.5μm (ọ dịghị mkpa ịkpụcha ọzọ iji belata ọnụọgụ nhazi na-esote).

Mkpụgharị: <10μm (belata ihe isi ike nke ịchacha ihe na-esote).

(2) Nhazi arụmọrụ
Ịkpụcha ọtụtụ ahịrị: ịkpụcha iberibe 100 ~ 500 n'otu oge, na-eme ka ikike mmepụta dịkwuo elu ugboro 3 ~ 5 (ma e jiri ya tụnyere ịkpụcha otu ahịrị).

Ndụ ahịrị: Ahịrị diamond nwere ike ịkpụ SiC 100 ~ 300km (dabere na ike ingot na nhazi usoro).

(3) Nhazi mmebi dị ala
Mbibi nke akụkụ: <15μm (mkpụcha ọdịnala> 50μm), melite mmepụta wafer.

Oyi akwa mmebi n'okpuru ala: <5μm (belata mwepụ nke ihe na-eme ka ọ dị ọcha).

(4) Nchedo gburugburu ebe obibi na akụ na ụba
Enweghị mmetọ simenti: Mbelata ọnụ ahịa mkpofu mmiri ihe mkpofu ma e jiri ya tụnyere ịkpụ simenti.

Ojiji ihe: Mbelata ihe na-efu <100μm/ ihe e ji egbutu ihe, na-echekwa ihe ndị e ji SiC mee.

Mmetụta ịcha:

1. Ọdịdị Wafer: enweghị mgbawa macroscopic n'elu, obere ntụpọ microscopic (mgbatị dislocation a na-achịkwa). Nwere ike ịbanye ozugbo na njikọ polishing siri ike, belata usoro usoro ahụ.

2. Nkwekọ: njupụta ọkpụrụkpụ nke wafer dị na ogbe ahụ bụ <±3%, nke dabara adaba maka mmepụta akpaaka.

3. Ntinye aka: Kwado ịkpụ ingot 4H/6H-SiC, dakọtara na ụdị conductive/ọkara mkpuchi.

Nkọwapụta teknụzụ:

Nkọwapụta	Nkọwa
Nha (L × W × H)	2500x2300x2500 ma ọ bụ hazie ya
Nhazi nha ihe onwunwe dị iche iche	4, 6, 8, 10, 12 sentimita asatọ nke silicon carbide
Ọdịdị elu siri ike	Ra≤0.3u
Ọsọ mbelata nkezi	0.3mm/min
Ibu	5.5t
Nzọụkwụ nhazi usoro ịkpụcha	Nzọụkwụ ≤30
Mkpọtụ akụrụngwa	≤80 dB
Nsogbu waya ígwè	0~110N(Nkwenye waya 0.25 bụ 45N)
Ọsọ waya ígwè	0~30m/S
Ike zuru oke	50kw
Dayameta waya dayamọnd	≥0.18mm
Nkwụsị ịdị larịị	≤0.05mm
Ọnụego mbelata na ịgbaji	≤1% (ma e wezụga ihe mmadụ mere, ihe eji eme silicon, eriri, mmezi na ihe ndị ọzọ)

Ọrụ XKH:

XKH na-enye ọrụ usoro niile nke igwe ịkpụ waya diamond silicon carbide, gụnyere nhọrọ akụrụngwa (dayameta waya/ngwakọ ọsọ waya), mmepe usoro (nhazi paramita ịkpụ), inye ihe oriri (waya diamond, wiil nduzi) na nkwado mgbe erechara ahịa (ndozi akụrụngwa, nyocha mma ịkpụ), iji nyere ndị ahịa aka inweta nnukwu mkpụrụ (>95%), mmepụta oke wafer SiC dị ọnụ ala. Ọ na-enyekwa nkwalite ahaziri ahazi (dịka ịkpụ dị oke mkpa, ibu na ibupu akpaaka) na oge ndu izu 4-8.