Ngwa SiC Dia200mm 4H-N na HPSI Silicon carbide
4H-N na HPSI bụ polytype nke silicon carbide (SiC), nwere usoro lattice kristal nke nwere nkeji hexagonal mejupụtara carbon anọ na atọm silicon anọ. Ihe owuwu a na-enye ihe ahụ ezigbo ngagharị elektrọn yana njirimara voltaji ndakpọ. N'ime ụdị SiC niile, 4H-N na HPSI ka a na-ejikarị eme ihe n'ọhịa nke eletriki eletrik n'ihi nha eletrọn ya na oghere oghere yana ịdị elu thermal conductivity.
Mpụta nke 8inch SiC substrates na-anọchite anya ọganihu dị ukwuu maka ụlọ ọrụ semiconductor ike. Ihe semiconductor dabere na silicon ọdịnala na-enweta mbelata dị ukwuu na arụmọrụ n'okpuru ọnọdụ dị oke egwu dị ka oke okpomọkụ na oke voltaji, ebe mkpụrụ SiC nwere ike idowe ọmarịcha arụmọrụ ha. E jiri ya tụnyere obere mkpụrụ, 8inch SiC substrates na-enye mpaghara nhazi otu akụkụ buru ibu, nke na-atụgharị na nrụpụta nrụpụta dị elu yana ọnụ ala dị ala, dị oke mkpa maka ịkwọ ụgbọ ala usoro azụmahịa nke teknụzụ SiC.
Teknụzụ uto maka mkpụrụ akụ silicon carbide (SiC) 8inch chọrọ ezigbo oke na ịdị ọcha. Ogo nke mkpụrụ osisi na-emetụta arụmọrụ nke ngwaọrụ ndị na-esote, yabụ ndị nrụpụta ga-eji teknụzụ dị elu were hụ na kristal zuru oke na njupụta ntụpọ dị ala nke ihe ndị ahụ. Nke a na-agụnye usoro mgbagwoju anya vapor deposition (CVD) na usoro uto kristal ziri ezi na igbutu. 4H-N na HPSI SiC substrates ka a na-ejikarị eme ihe n'ọhịa nke eletriki eletrik, dị ka ndị na-agbanwe ike dị elu, traction inverters maka ụgbọ ala eletrik, na usoro ume ọhụrụ.
Anyị nwere ike ịnye 4H-N 8inch SiC mkpụrụ, akara ule dị iche iche nke mkpụrụ osisi wafers. Anyị nwekwara ike ịhazi nhazi dịka mkpa gị siri dị. Nnọọ ajụjụ!