Ọkụ SiC Ingot Growth maka Usoro SiC Crystal TSSG/LPE buru ibu

Okpomọkụ SiC Ingot maka Usoro SiC Crystal TSSG/LPE buru ibu Foto a na-egosipụta

Nkọwa Dị Mkpirikpi:

Okpokoro ọkụ silicon carbide ingot nke XKH na-eji teknụzụ TSSG (Top-Seeded Solution Growth) na LPE (Liquid Phase Epitaxy) kacha elu n'ụwa, nke e mere kpọmkwem maka uto kristal SiC dị elu. Usoro TSSG na-eme ka uto nke ingots 4H/6H-SiC buru ibu nke dị sentimita 4-8 site na nhazi okpomọkụ ziri ezi na njikwa ọsọ mbuli mkpụrụ, ebe usoro LPE na-eme ka uto a na-achịkwa nke oyi akwa epitaxial SiC dị mfe na okpomọkụ dị ala, karịsịa dabara adaba maka oyi akwa epitaxial dị oke njọ. E tinyela usoro uto silicon carbide ingot mmiri mmiri a nke ọma na mmepụta ụlọ ọrụ nke kristal SiC dị iche iche gụnyere ụdị 4H/6H-N na ụdị mkpuchi 4H/6H-SEMI, na-enye ngwọta zuru oke site na akụrụngwa ruo na usoro.

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atụmatụ

Ụkpụrụ Ọrụ

Isi ihe dị mkpa nke uto ingot silicon carbide nke mmiri mmiri gụnyere ịgbari ihe ndị dị ọcha nke SiC dị elu n'ime ọla ndị a gbazere agbaze (dịka ọmụmaatụ, Si, Cr) na 1800-2100°C iji mepụta ngwọta juru eju, nke na-esote uto ntụziaka nke kristal otu SiC na kristal mkpụrụ site na nhazi okpomọkụ ziri ezi na nhazi supersaturation. Teknụzụ a dabara adaba karịsịa maka imepụta kristal otu 4H/6H-SiC dị ọcha (>99.9995%) nwere obere njupụta ntụpọ (<100/cm²), na-emezu ihe achọrọ siri ike maka ngwa eletrọnịkị ike na ngwaọrụ RF. Sistemụ uto mmiri mmiri na-enye ohere njikwa ziri ezi nke ụdị conductivity kristal (ụdị N/P) na resistive site na nhazi ngwọta na paramita uto kachasị mma.

Isi Ihe Ndị Dị Mkpa

1. Sistemụ Crucible Pụrụ Iche: Igwe graphite/tantalum dị ọcha nke ukwuu, okpomọkụ na-eguzogide >2200°C, na-eguzogide nchara agbaze SiC.

2. Sistemụ Ọkụ nke Mpaghara Dị Iche Iche: Igwe ọkụ jikọtara ọnụ nke iguzogide/ịkpọ oku site na ijikọta ya na njikwa okpomọkụ nke ±0.5°C (oke 1800-2100°C).

3. Sistemụ Nrụgharị Nkịtị: Njikwa mkpọchi abụọ maka ntụgharị mkpụrụ (0-50rpm) na ibuli elu (0.1-10mm/h).

4. Sistemụ Njikwa Ikuku: Nchedo argon/nitrogen dị ọcha nke ukwuu, nrụgide ọrụ a na-agbanwe agbanwe (0.1-1atm).

5. Sistemụ Njikwa Ọgụgụ Isi: PLC+ njikwa PC ụlọ ọrụ mmepụta ihe na-enweghị ọrụ yana nlekota nhazi uto n'oge.

6. Sistemụ Jụụ Dị Irè: Nhazi mmiri oyi nke e nyere ọkwa na-eme ka ọrụ ya sie ike ruo ogologo oge.

Ntụnyere TSSG na LPE

Àgwà	Usoro TSSG	Usoro LPE
Okpomọkụ Uto	2000-2100°C	1500-1800°C
Ọnụego uto	0.2-1mm/h	5-50μm/h
Nha kristal	Ingots nke 4-8 sentimita asatọ	50-500μm epi-layer
Ngwa Isi	Nkwadebe ihe ndị dị n'okpuru ala	Ngwa ike epi-layer
Njupụta ntụpọ	<500/cm²	<100/cm²
Ụdị Polytypes Kwesịrị Ekwesị	4H/6H-SiC	4H/3C-SiC

Ngwa Ndị Dị Mkpa

1. Igwe Elektrọniki Ike: ihe ndị dị sentimita isii nke 4H-SiC maka 1200V+ MOSFET/diodes.

2. Ngwaọrụ RF 5G: Ihe ndị na-eme ka SiC ghara ịgbachi nkịtị maka PA ọdụ isi.

3. Ngwa EV: Akwa epi dị oke ọkpụrụkpụ (>200μm) maka modulu ọkwa ụgbọala.

4. PV Inverters: Ihe ndị nwere obere ntụpọ na-eme ka arụmọrụ ntụgharị dị elu karịa 99%.

Uru Isi

1. Ike Teknụzụ
1.1 Nhazi Ọtụtụ Ụzọ Agbakwunyere
Sistemụ uto SiC ingot a nke mmiri mmiri na-ejikọta teknụzụ uto kristal TSSG na LPE ọhụrụ. Sistemụ TSSG na-eji uto ngwọta dị elu nke nwere njikọ mgbaze na njikwa ọnọdụ okpomọkụ (ΔT≤5℃/cm), na-eme ka uto kwụsiri ike nke ingots SiC buru ibu nke 4-8 inch yana mkpụrụ nke 15-20kg maka kristal 6H/4H-SiC. Sistemụ LPE na-eji nhazi ihe mgbaze kachasị mma (Si-Cr alloy alloy) na njikwa supersaturation (±1%) iji too akwa epitaxial dị elu nke nwere njupụta ntụpọ <100/cm² na obere okpomọkụ (1500-1800℃).

1.2 Sistemụ Njikwa Ọgụgụ Isi
Ejiri njikwa uto smart nke ọgbọ nke anọ mee ihe, nke gụnyere:
• Nlekota dị iche iche n'ime ebe (oke ogologo ebili mmiri 400-2500nm)
• Nchọpụta ọkwa agbaze nke dabere na laser (± 0.01mm nkenke)
• Njikwa mkpọchi-akara nke dabeere na CCD (<±1mm mgbanwe)
• Nhazi nke paramita uto nke AI na-akwado (15% nchekwa ike)

2. Uru Arụmọrụ Usoro
2.1 Usoro TSSG Ike Isi
• Ikike nha buru ibu: Na-akwado uto kristal ruo sentimita 8 na nha nhata nke dayameta karịrị 99.5%.
• Mkpuchi kristal dị elu: Njupụta mgbanwe <500/cm², njupụta paịpụ obere <5/cm²
• Nha nhata nke doping: <8% mgbanwe n-ụdị resisivity (wafers 4-inch)
• Ọkwa uto kachasị mma: Enwere ike ịgbanwe 0.3-1.2mm/h, 3-5× ngwa ngwa karịa usoro nke usoro vapor

2.2 Usoro LPE Ike Isi
• Epitaxy nwere ntụpọ dị oke ala: Njupụta ọnọdụ njikọ <1×10¹¹cm⁻²·eV⁻¹
• Njikwa ọkpụrụkpụ kpọmkwem: 50-500μm epi-layers nwere mgbanwe ọkpụrụkpụ <±2%
• Arụmọrụ okpomọkụ dị ala: 300-500℃ dị ala karịa usoro CVD
• Mgbagwoju anya nke nhazi: Na-akwado njikọ pn, superlattices, wdg.

3. Uru nke Mmepụta Mmepụta
3.1 Njikwa Ọnụ Ahịa
• 85% ojiji ihe eji emepụta ihe (ma e jiri ya tụnyere 60% nkịtị)
• Ojiji ike dị ala karịa pasentị iri anọ (ma e jiri ya tụnyere HVPE)
• Oge ọrụ akụrụngwa 90% (nhazi modular na-ebelata oge ọrụ)

3.2 Nkwa Ogo
• Njikwa usoro 6σ (CPK>1.67)
• Nchọpụta ntụpọ n'ịntanetị (mkpebi 0.1μm)
• Nchọgharị data zuru oke (paịmatị oge 2000+)

3.3 Nhazi
• Dakọtara na ụdị 4H/6H/3C
• Enwere ike imelite ya na modulu usoro nke sentimita iri na abụọ
• Na-akwado njikọta SiC/GaN hetero-integration

4. Uru Ngwa Ụlọ Ọrụ
4.1 Ngwaọrụ Ike
• Ihe ndị na-anaghị eguzogide ọgwụ (0.015-0.025Ω·cm) maka ngwaọrụ 1200-3300V
• Ihe ndị na-egbochi ihe mkpuchi ọkara (>10⁸Ω·cm) maka ngwa RF

4.2 Teknụzụ Ndị Na-apụta
• Nkwukọrịta kwantum: Ihe ndị na-eme ka mkpọtụ dị obere nke ukwuu (mkpọtụ 1/f <-120dB)
• Gburugburu ebe dị oke njọ: Kristal ndị na-anaghị eguzogide radieshon (<5% mmebi mgbe 1×10¹⁶n/cm² radieshon gasịrị)

Ọrụ XKH

1. Ngwaọrụ ahaziri ahazi: Nhazi sistemụ TSSG/LPE ahaziri ahazi.
2. Ọzụzụ Usoro: Mmemme ọzụzụ teknụzụ zuru oke.
3. Nkwado Mgbe Ahịa Gasịrị: Nzaghachi teknụzụ na mmezi ya awa iri abụọ na anọ n'ụbọchị asaa.
4. Ngwọta Turnkey: Ọrụ zuru oke site na ntinye ruo na nkwenye usoro.
5. Ngwakọta ihe: E nwere ihe ndị dị na SiC/epi-wafers nke dị sentimita 2-12.

Uru dị mkpa gụnyere:
• Ike itolite kristal ruo sentimita asatọ.
• Nha nhata nke iguzogide <0.5%.
• Oge ọrụ akụrụngwa >95%.
• Nkwado teknụzụ awa iri abụọ na anọ n'ụbọchị asaa.