Ọkụ uto SiC Ingot maka nnukwu dayameta SiC Crystal TSSG/LPE

Nkọwa dị mkpirikpi:

Igwe ọkụ ọkụ silicon carbide ingot nke mmiri mmiri nke XKH na-eji teknụzụ TSSG na-eduga ụwa na teknụzụ LPE (Liquid Phase Epitaxy), emebere ya maka uto kristal SiC dị elu. Usoro TSSG na-enyere aka itolite nke 4-8 inch nnukwu dayameta 4H/6H-SiC ingots site na gradient okpomoku ziri ezi na njikwa ọsọ mkpụrụ, ebe usoro LPE na-eme ka uto nke SiC epitaxial na-achịkwa n'obere okpomọkụ, ọkachasị dabara adaba maka akwa epitaxial nwere ntụpọ dị ala. A na-etinye usoro ihe ọkụkụ nke silicon carbide ingot nke mmiri mmiri nke ọma na mmepụta mmepụta ihe nke kristal SiC dị iche iche gụnyere ụdị 4H / 6H-N na ụdị mkpuchi 4H / 6H-SEMI, na-enye ngwọta zuru oke site na ngwa na usoro.

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Atụmatụ

Ụkpụrụ ọrụ

The isi ụkpụrụ nke mmiri mmiri-phase silicon carbide ingot uto na-agụnye igbari elu-ọcha SiC akụrụngwa na ọla a wụrụ awụ (eg, Si, Cr) na 1800-2100 ° C na-etolite jupụta ngwọta, sochiri na-achịkwa directional uto nke SiC otu kristal na mkpụrụ kristal site kpọmkwem okpomọkụ gradient na supersaturation ụkpụrụ. Teknụzụ a dabara adaba maka imepụta ịdị ọcha dị elu (> 99.9995%) 4H/6H-SiC otu kristal nwere njupụta ntụpọ dị ala (<100/cm²), na-ezute ihe ndị achọrọ maka ngwa elektrọn ike na ngwaọrụ RF. Usoro uto nke mmiri mmiri na-eme ka njikwa ziri ezi nke ụdị conductivity kristal (ụdị N/P) na mgbochi site na nhazi ngwọta kachasị mma na oke uto.

Ngwa ndị isi

1. Sistemụ Crucible Pụrụ Iche: Elu-ọcha graphite / tantalum composite crucible, okpomọkụ na-eguzogide> 2200 ° C, na-eguzogide SiC gbazee corrosion.

2. Usoro ikpo ọkụ nke ọtụtụ mpaghara: Nkwekọrịta na-eguzogide / induction kpo oku na njikwa okpomọkụ nke ± 0.5 ° C (1800-2100 ° C nso).

3. Sistemụ Motion nkenke: njikwa mechiri emechi abụọ maka ntụgharị mkpụrụ (0-50rpm) na ibuli (0.1-10mm / h).

4. Usoro nchịkwa ikuku: Nchekwa argon / nitrogen dị elu, nrụgide ọrụ na-agbanwe agbanwe (0.1-1atm).

5. Sistemụ Njikwa ọgụgụ isi: PLC + ụlọ ọrụ na-arụ ọrụ PC ejighi ọrụ njikwa na nleba anya nleba anya uto oge.

6. Sistemụ jụrụ oyi nke ọma: Nhazi mmiri jụrụ oyi na-eme ka ọrụ kwụsie ike ogologo oge.

TSSG vs. ntụnyere LPE

Njirimara	Usoro TSSG	Usoro LPE
Okpomọkụ uto	2000-2100C	1500-1800C
Ọnụego uto	0.2-1mm / h	5-50μm / h
Nha kristal	4-8 sentimita asatọ	50-500μm epi-layers
Ngwa isi	Nkwadebe mkpụrụ	Epi-layers ngwaọrụ ike
Njupụta	<500/cm²	<100/cm²
Ụdị Polytype dabara adaba	4H/6H-SiC	4H/3C-SiC

Ngwa igodo

1. Ike Eletrọnịkị: 6-inch 4H-SiC substrates maka 1200V + MOSFETs / diodes.

2. 5G RF Ngwaọrụ: Semi-insulating SiC substrates maka base station PAs.

3. Ngwa EV: Ultra-thick (> 200μm) epi-layers for automotive-grade modules.

4. Ndị ntụgharị PV: Ihe ndị na-adịghị ala ala na-enyere> 99% ngbanwe arụmọrụ.

Isi Uru

1. Teknụzụ kacha elu
1.1 Ejikọtara ọtụtụ usoro imewe
SiC ingot usoro uto nke mmiri mmiri na-ejikọta TSSG na teknụzụ uto kristal LPE. Sistemụ TSSG na-eji uto mkpụrụ osisi na-eto eto na mgbaze gbazee na njikwa gradient okpomọkụ (ΔT≤5 ℃ / cm), na-eme ka uto kwụsiri ike nke 4-8 inch nnukwu dayameta SiC ingots nwere otu-agba ọsọ nke 15-20kg maka kristal 6H/4H-SiC. Sistemụ LPE na-eji ihe mgbaze kachasị mma (Si-Cr alloy system) na njikwa supersaturation (± 1%) na-eto eto epitaxial dị elu nke nwere njupụta ntụpọ <100/cm² na obere okpomọkụ (1500-1800 ℃).

1.2 Sistemụ Njikwa ọgụgụ isi
Ejiri ya na njikwa uto smart smart nke ọgbọ nke anọ na-egosipụta:
• Nleba anya n'ime ọnọdụ dị iche iche (400-2500nm ogologo ikuku)
• Nchọpụta ọkwa mgbaze nke dabere na laser (± 0.01mm nkenke)
• njikwa aka mechiri emechi dabere na dayameta nke CCD (<± 1mm fluctuation)
• Nkwalite oke uto nke AI kwadoro (nchekwa 15% ike)

2. Uru Ịrụ Ọrụ Usoro
2.1 Ụzọ TSSG Isi Ike
• Ikike dị ukwuu: Na-akwado uto kristal 8-inch yana otu nha dayameta>99.5%
• crystallinity dị elu: Njupụta nchụpụ <500/cm², njupụta micropipe <5/cm²
• Doping edo edo: <8% n-ụdị resistivity mgbanwe (wafer 4-inch)
• Ọnụego uto kachasị mma: 0.3-1.2mm / h na-agbanwe agbanwe, 3-5 × ngwa ngwa karịa ụzọ vapo-phase

2.2 Ụzọ LPE Isi Ike
• Epitaxy ntụpọ dị obere: Njupụta steeti ihu <1×10¹¹cm⁻²·eV⁻¹
• Njikwa ọkpụrụkpụ nke ọma: 50-500μm epi-layers na <± 2% ọkpụrụkpụ ọdịiche.
• Obere okpomọkụ arụmọrụ: 300-500 ℃ ala karịa CVD usoro
• Mkpokọta ihe owuwu dị mgbagwoju anya: Na-akwado pn junctions, superlatices, wdg.

3. Mmepụta arụmọrụ Uru
3.1 Njikwa ọnụ ahịa
• 85% akụrụngwa itinye n'ọrụ (vs. 60% omenala)
• 40% oriri ume ala (tụnyere HVPE)
• 90% akụrụngwa uptime (modular imewe na-ebelata downtime)

3.2 Nkwenye mma
• 6σ njikwa usoro (CPK>1.67)
• Nchọpụta ntụpọ n'ịntanetị (mkpebi 0.1μm)
• Nchọta data na-arụ ọrụ zuru oke (ihe dị ka 2000+ ezigbo oge)

3.3 scalability
• Dakọtara na 4H/6H/3C polytypes
• Upgradeable ka 12-inch usoro modul
• Na-akwado SiC/GaN hetero-mmekota

4. Ụlọ ọrụ Ngwa Uru
4.1 Ngwaọrụ Ike
• Mgbanwe ndị na-eguzogide obere (0.015-0.025Ω·cm) maka ngwaọrụ 1200-3300V
• Mgbochi nke ọkara mkpuchi (>10⁸Ω·cm) maka ngwa RF

4.2 Teknụzụ na-apụta
• Nkwukọrịta ọnụọgụgụ: Mkpọtụ mkpọtụ dị ala (1/f mkpọtụ<-120dB)
• Mpaghara dị oke egwu: kristal na-eguzogide radieshon (<5% mmebi mgbe 1 × 10¹⁶n/cm² irradiation gasịrị)

Ọrụ XKH

1. Akụrụngwa ahaziri ahazi: nhazi usoro TSSG / LPE ahaziri.
2. Usoro Ọzụzụ: Comprehensive oru ọzụzụ mmemme.
3. Nkwado mgbe-ahịa: 24/7 nzaghachi teknụzụ na mmezi.
4. Ngwọta Turnkey: Ọrụ ụdịdị dị iche iche site na ntinye iji hazie nkwado.
5. Ihe ntinye: 2-12 inch SiC substrates/epi-wafers dị.

Isi uru gụnyere:
• Ruo 8-inch kristal ike uto.
• Nkwekọrịta nkwụghachi ụgwọ <0.5%.
• Oge ngwa ngwa> 95%.
• 24/7 nkwado teknụzụ.