Ụdị SiC Ingot 4H Dia 4inch 6inch Ọkpụrụkpụ 5-10mm Nchọpụta / Dummy Grade

Nkọwa dị mkpirikpi:

Silicon Carbide (SiC) apụtala dị ka ihe bụ isi na ngwa eletrọnịkị na ngwa optoelectronic dị elu n'ihi akụrụngwa ọkụ, ọkụ na igwe dị elu. The 4H-SiC Ingot, dị na dayameta nke 4-inch na 6-inch nke nwere ọkpụrụkpụ nke 5-10 mm, bụ ngwaahịa ntọala maka nyocha na ebumnuche mmepe ma ọ bụ dị ka ihe nkpuchi. Emebere ingot a iji nye ndị nyocha na ndị nrụpụta ihe nrụpụta SiC dị elu dabara adaba maka imepụta ngwaọrụ, ọmụmụ nnwale, ma ọ bụ nhazi na usoro nnwale. Site na nhazi kristal hexagonal pụrụ iche, 4H-SiC ingot na-enye ohere dị ukwuu na ngwa eletrọnịkị ike, ngwaọrụ dị elu na sistemu na-eguzogide radieshon.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Njirimara

1. Crystal Structure na nghazi
Ụdị poly: 4H (ihe owuwu hexagonal)
Lattice Constant:
a = 3.073 Å
c = 10.053 Å
Nhazi: Ọ na-adịkarị [0001] (C-plane), mana nghazi ndị ọzọ dịka [11\overline{2}0] (A-plane) dịkwa ma arịọ ya.

2. Akụkụ anụ ahụ
Dayameta:
Nhọrọ ọkọlọtọ: 4 inch (100 mm) na 6 sentimita (150 mm)
Ọkpụrụkpụ:
Dị na nso nke 5-10 mm, customizable dabere na ngwa chọrọ.

3. Ngwa eletriki
Ụdị Doping: Dị na intrinsic (ọkara mkpuchi), n-ụdị (doped na nitrogen), ma ọ bụ p-ụdị (doped na aluminum ma ọ bụ boron).

4. Thermal na Mechanical Njirimara
Thermal Conductivity: 3.5-4.9 W / cm · K na ụlọ okpomọkụ, na-enyere ndị magburu onwe okpomọkụ dissipation.
Isi ike: Mohs nha 9, na-eme SiC nke abụọ naanị na diamond na isi ike.

Oke	Nkọwa	Nkeji
Uzo uto	Ụgbọ njem ụgbọ elu anụ ahụ (PVT)
Dayameta	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Ụdị poly	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Ntuzi ihu ihu	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (ndị ọzọ)	ogo
Ụdị	Ụdị N
Ọkpụrụkpụ	5-10 / 10-15 / >15	mm
Nhazi Flat nke izizi	(10-10) ± 5.0˚	ogo
Ogologo Flat nke izizi	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Nhazi Flat nke abụọ	90˚ CCW sitere na nghazi ± 5.0˚	ogo
Ogologo Flat nke abụọ	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Ọ dịghị (150 mm)	mm
Ọkwa	Nchọpụta / Dummy

Ngwa

1. Nnyocha na mmepe

Nchọpụta-ọkwa 4H-SiC ingot dị mma maka ụlọ akwụkwọ agụmakwụkwọ na ụlọ ọrụ mmepụta ihe lekwasịrị anya na mmepe ngwaọrụ dabere na SiC. Ogo kristal ya dị elu na-enyere nnwale ziri ezi na akụrụngwa SiC, dị ka:
Ọmụmụ ngagharị nke ụgbọelu.
Usoro njiri mara ntụpọ na mbelata.
Nkwalite usoro uto epitaxial.

2. Dummy Substrate
A na-eji dummy-grade ingot eme ihe n'ọtụtụ ebe na nnwale, nhazigharị, na ngwa prototyping. Ọ bụ ụzọ dị ọnụ ala maka:
Usoro nhazi nhazi n'ime mwepu ọkụ ọkụ kemịkalụ (CVD) ma ọ bụ nkwụnye ọkụ nke anụ ahụ (PVD).
Ịtụle etching na polishing usoro na gburugburu n'ichepụta.

3. Igwe ọkụ eletrik
N'ihi nnukwu bandgap ya na ịdị elu thermal conductivity, 4H-SiC bụ isi nkuku maka ngwa eletrọnịkị ike, dịka:
MOSFET voltaji dị elu.
Schottky Barrier Diodes (SBDs).
Ntugharị Ubi-Effect Transistor (JFETs).
Ngwa gụnyere ihe ntụgharị ụgbọ ala eletrik, ihe ntụgharị anyanwụ, na grid smart.

4. Ngwaọrụ ndị na-eme ihe dị elu
Mbugharị eletrọn dị elu nke ihe ahụ yana mfu ike dị ala mere ka ọ dabara maka:
transistors Frequency Radio (RF).
Sistemụ nkwurịta okwu ikuku, gụnyere akụrụngwa 5G.
Ngwa ikuku na nchekwa nchekwa chọrọ sistemụ radar.

5. Radiation-Resistant Systems
Nguzogide 4H-SiC sitere na mmebi radieshon na-eme ka ọ dị mkpa na gburugburu ebe siri ike dịka:
Akụrụngwa nyocha oghere.
Ngwá ọrụ nlekota ike nuklia.
Igwe eletrọnịkị-ọkwa agha.

6. Teknụzụ na-apụta
Ka teknụzụ SiC na-aga n'ihu, ngwa ya na-aga n'ihu na-eto eto na mpaghara dịka:
Photonics na nyocha mgbakọ na mwepụ.
Mmepe nke LEDs dị elu na ihe mmetụta UV.
Nchikota n'ime akụkụ obosara-bandgap semiconductor heterostructures.
Uru nke 4H-SiC Ingot
Ọcha dị elu: Emepụtara n'okpuru ọnọdụ siri ike iji belata adịghị ọcha na njupụta ntụpọ.
Scalability: Dị na ma 4-inch na 6-inch dayameta iji kwado ụkpụrụ ụlọ ọrụ na mkpa nyocha.
Ntughari: Enwere ike ime ka ụdị doping dị iche iche na ntụzịaka iji mezuo ihe achọrọ ngwa ngwa.
Arụmọrụ siri ike: Igwe ọkụ na nkwụsi ike nke igwe dị elu n'okpuru ọnọdụ ọrụ dị oke egwu.

Mmechi

The 4H-SiC ingot, ya na ihe ya pụrụ iche na ngwa dịgasị iche iche, na-eguzo n'ihu n'ihu nke ihe ọhụrụ maka ngwa eletriki na optoelectronics na-esote. Ma ejiri ya maka nyocha agụmakwụkwọ, prototyping ụlọ ọrụ mmepụta ihe, ma ọ bụ imepụta ngwaọrụ dị elu, ingots ndị a na-enye ikpo okwu a pụrụ ịdabere na ya maka ịkwanye oke teknụzụ. Site na nha ndị nwere ike ịhazigharị, doping, na nhazi, 4H-SiC ingot bụ ahaziri iji gboo mkpa na-agbanwe agbanwe nke ụlọ ọrụ semiconductor.
Ọ bụrụ na ị nwere mmasị ịmụtakwu ma ọ bụ ịtụnye iwu, biko nweere onwe gị iru maka nkọwa zuru ezu na ndụmọdụ teknụzụ.