SiC ceramic tray plate graphite nwere mkpuchi CVD SiC maka akụrụngwa

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Shanghai Xinkehui New Materials Co., Ltd. na-arụpụta Φ380mm-Φ600mm semiconductor etching disk, wafer bearing disk, silicon carbide tray, SIC tray, silicon carbide tray, ICP etching tray, etching tray, silicon carbide dị ọcha> 99.9%, SIC tray ndụ ọrụ ndụ. bụ okpukpu anọ nke tray CVD dabeere na graphite, iji ogologo oge na-enweghị nrụrụ, Nguzogide ruo FH acid, gbadoro ụkwụ H2So4 corrosion.

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Silicon carbide ceramics na-adịghị na-eji na mkpa ihe nkiri ntinye ogbo, dị ka epitaxy ma ọ bụ MOCVD, ma ọ bụ na wafer nhazi, na obi nke wafer na-ebu trays maka MOCVD na mbụ doro anya na deposition gburugburu ebe obibi, ya mere na-eguzogide nke ukwuu. okpomọkụ na corrosion. Ndị na-ebu mkpuchi na-ekpuchi SiC na-enwekwa conductivity dị elu na okpomọkụ dị mma na nkesa nkesa.

Dị ọcha Chemical Vapor Deposition Silicon Carbide (CVD SiC) wafer ndị na-ebu maka nhazi elu igwe igwe Organic Chemical Vapor Deposition (MOCVD).

Ndị na-ebu CVD SiC dị ọcha dị elu karịa ndị na-ebu wafer ndị a na-eji eme ihe na usoro a, nke bụ graphite ma kpuchie ya na oyi akwa CVD SiC. Ndị a na-ebu graphite mkpuchi mkpuchi enweghị ike iguzogide oke okpomọkụ (1100 ruo 1200 degrees Celsius) chọrọ maka ntinye GaN nke nchapụta dị elu nke na-acha anụnụ anụnụ na nke ọcha. Okpomọkụ dị elu na-eme ka mkpuchi ahụ mepụta obere pinholes nke usoro kemịkalụ na-emebi graphite dị n'okpuru. Ahụhụ graphite ahụ na-apụ apụ ma metọọ GaN, na-eme ka a dochie ihe mkpuchi wafer ahụ.

CVD SiC nwere ịdị ọcha nke 99.999% ma ọ bụ karịa ma nwee conductivity thermal dị elu yana nguzogide ujo. Ya mere, ọ nwere ike iguzogide okpomọkụ dị elu na gburugburu ebe obibi siri ike nke nrụpụta ọkụ ọkụ dị elu. Ọ bụ ihe siri ike monolithic nke na-erute njupụta nke usoro ihe ọmụma, na-emepụta ihe ndị dị ntakịrị, ma na-egosipụta oke nrụrụ na mgbochi mbuze. Ihe nwere ike gbanwee opacity na conductivity na-enweghị iwebata adịghị ọcha ọla. Ndị na-ebu wafer na-abụkarị sentimita 17 na dayameta ma nwee ike ijide ihe ruru 40 2-4 inch wafer.