Ngwaahịa
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SiC seramiiki chuck tray seramiiki mmiri ara iko nke ziri ezi machining ahaziri
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Enwere ike iji usoro sapphire fiber dayameta 75-500μm LHPG mee ihe maka ihe mmetụta sapphire fiber dị elu.
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Sapphire eriri otu kristal Al₂O₃ elu ngwa anya transmittance agbaze ebe 2072℃ nwere ike iji maka laser window ihe.
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Enwere ike iji mkpụrụ osisi sapphire emebere PSS 2inch 4inch 6inch ICP akọrọ etching maka ibe LED.
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Obere tebụl laser ọkpọ ọkpọ 1000W-6000W kacha nta oghere 0.1MM nwere ike iji metal iko seramiiki ihe.
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Sapphire thermocouple tube ngwaahịa ụlọ ọrụ mmepụta ihe na-eji Single kristal Al2O3
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Igwe na-egwupụta ihe laser dị elu maka sapphire ceramic material gem bearing nozzle drilling
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Sapphire otu kristal Al2O3 ibu ọkụ KY usoro Kyropoulos mmepụta nke kristal sapphire dị elu.
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2 inch 4 inch 6 inch Patterned Sapphire Substrate (PSS) nke a na-akụ ihe GaN nwere ike iji maka ọkụ ọkụ.
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4H-N/6H-N SiC Wafer Reasearch mmepụta Dummy grade Dia150mm Silicon carbide substrate
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Monocrystalline silicon ibu ọkụ monocrystalline silicon ingot eto akụrụngwa akụrụngwa okpomọkụ ruo 2100 ℃
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Igwe ọkụ na-eto eto kristal Czochralski otu ọkụ kristal CZ iji too wafer sapphire dị elu.