Ngwaahịa
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Usoro nhazi ihu elu nke mkpanaka laser kristal titanium-doped sapphire
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ụdị mmepụta ọkwa 500um ọkpụrụkpụ
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Ugboro abụọ na-eme ka ọ bụrụ ọkwa ọkwa ọkwa mbụ.
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200mm 8inch GaN na sapphire Epi-layer wafer mkpụrụ
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Sapphire tube KY Method all transperent customizable
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6 inch Conductive SiC Composite Substrate 4H Dayameta 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling akụrụngwa maka iko mkpọ mmiri ọkpụrụkpụ≤20mm
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Microjet laser technology akụrụngwa wafer ịcha SiC ihe nhazi
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Silicon carbide diamond waya ịkpụ igwe 4/6/8/12 inch SiC ingot nhazi
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Usoro CVD maka imepụta akụrụngwa SiC dị ọcha na ọkụ ọkụ silicon carbide na 1600 ℃
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Silicon carbide na-eguzogide ogologo ọkụ kristal na-eto 6/8/12 inch SiC ingot crystal PVT usoro
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Ugboro abụọ ọdụ square igwe monocrystalline silicon mkpanaka nhazi 6/8/12 inch elu flatness Ra≤0.5μm