Ụdị SiC ụdị P-ụdị SiC wafer Dia2inch ngwaahịa ọhụrụ

Nkọwa dị mkpirikpi:

2 inch P-Type Silicon Carbide (SiC) Wafer na 4H ma ọ bụ 6H polytype. Ọ nwere ihe ndị yiri ya dị ka N-ụdị Silicon Carbide (SiC) wafer, dị ka elu okpomọkụ na-eguzogide, elu thermal conductivity, elu eletriki conductivity, wdg P-ụdị SiC mkpụrụ a na-ejikarị eme ihe maka nrụpụta ike ngwaọrụ, karịsịa mmepụta nke Insulated. Ọnụ ụzọ ámá bipolar transistors (IGBT). Nhazi nke IGBT na-agụnyekarị njikọ PN, ebe P-ụdị SiC nwere ike ịba uru maka ịchịkwa omume nke ngwaọrụ.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Ụdị silicon carbide substrates na-ejikarị eme ngwaọrụ ike, dị ka Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, nke bụ mgbanyụ ọkụ. MOSFET = IGFET (metal oxide semiconductor field effect tube, ma ọ bụ ihe mgbochi transistor ụdị ámá mkpuchi). BJT (Bipolar Junction Transistor, nke a makwaara dị ka transistor), bipolar pụtara na enwere ụdị elektrọn abụọ na ndị na-ebu oghere na-etinye aka na usoro nhazi na-arụ ọrụ, n'ozuzu enwere njikọ PN na-etinye aka na nhazi.

Ụdị 2-inch p-ụdị silicon carbide (SiC) wafer dị na 4H ma ọ bụ 6H polytype. O nwere ihe ndị yiri ya na ụdị n-ụdị silicon carbide (SiC) wafers, dị ka oke okpomọkụ na-eguzogide, elu okpomọkụ conductivity, na elu eletriki conductivity. Ụdị SiC nke p-ụdị a na-ejikarị eme ihe n'ịmepụta ngwaọrụ ike, karịsịa maka ịmepụta transistor bipolar (IGBTs). Nhazi nke IGBT na-agụnyekarị njikọ PN, ebe p-ụdị SiC bara uru maka ịchịkwa omume nke ngwaọrụ ahụ.