SiC silicon carbidengwaọrụ na-ezo aka na ngwaọrụ nke silicon carbide dị ka akụrụngwa.
Dị ka dị iche iche na-eguzogide Njirimara, ọ na-ekewa n'ime conductive silicon carbide ike ngwaọrụ naọkara mkpuchi silicon carbideNgwa RF.
Ụdị ngwaọrụ na ngwa nke silicon carbide
Isi uru nke SiC karịrịSi ihebụ:
SiC nwere oghere eriri ugboro 3 karịa nke Si, nke nwere ike ibelata ntapu ma welie nnabata okpomọkụ.
SiC nwere 10 ugboro mgbawa ike ubi Si, nwere ike melite njupụta ugbu a, arụ ọrụ ugboro, iguzogide voltaji ike na ibelata on-apụ ọnwụ, ọzọ dabara maka elu voltaji ngwa.
SiC nwere okpukpu abụọ nke saturation eletrọn nke Si, yabụ ọ nwere ike ịrụ ọrụ n'ogo dị elu.
SiC nwere okpukpu 3 nke ikuku okpomọkụ nke Si, ịrụ ọrụ nkwụsị ọkụ ka mma, nwere ike ịkwado njupụta ike dị elu ma belata ihe ọkụ ọkụ chọrọ, na-eme ka ngwaọrụ ahụ dị ọkụ.
Mkpụrụ mkpụrụ osisi na-eme ihe
Ihe na-arụ ọrụ: Site n'iwepụ adịghị ọcha dị iche iche na kristal, karịsịa adịghị ọcha larịị larịị, iji nweta ihe dị n'ime ime elu resistivity nke kristal.
Na-eduzisilicon carbide mkpụrụSiC wafer
Ngwa ike silicon carbide na-arụ ọrụ bụ site na uto nke silicon carbide epitaxial Layer na mkpụrụ ihe na-eduzi, a na-ahazi akwụkwọ mpempe akwụkwọ silicon carbide epitaxial, gụnyere mmepụta nke Schottky diodes, MOSFET, IGBT, wdg, nke a na-ejikarị na ụgbọ ala eletrik, ike fotovoltaic. ọgbọ, ụzọ ụgbọ oloko, ebe data, chaja na akụrụngwa ndị ọzọ. Uru arụmọrụ bụ ndị a:
Emelitere njirimara nrụgide dị elu. Ike mgbawa ọkụ eletrik nke silicon carbide karịrị okpukpu 10 nke silicon, nke na-eme ka nguzogide dị elu nke ngwaọrụ silicon carbide dị elu karịa nke ngwaọrụ silicon.
Mma elu okpomọkụ àgwà. Silicon carbide nwere conductivity okpomọkụ dị elu karịa silicon, nke na-eme ka ikpo ọkụ ngwaọrụ dị mfe na njedebe na-arụ ọrụ okpomọkụ dị elu. Igwe ọkụ dị elu nwere ike iduga mmụba dị ukwuu na njupụta ike, ebe ị na-ebelata ihe ndị a chọrọ na usoro jụrụ oyi, nke mere na njedebe nwere ike ịdị arọ karị ma dị ntakịrị.
Oriri ike dị ala. ① Silicon carbide ngwaọrụ nwere obere na-eguzogide na obere na-efu; (2) Mwepu nke ngwaọrụ silicon carbide dị ugbu a na-ebelata nke ukwuu karịa nke ngwaọrụ silicon, si otú a na-ebelata ọnwụ ike; ③ Enweghị ihe ọhụụ ọdụdụ dị ugbu a na usoro ntụgharị nke ngwaọrụ silicon carbide, na ngbanwe mgbanwe dị ala, nke na-eme ka mgbanwe mgbanwe nke ngwa bara uru dị ukwuu.
Mkpụrụ SiC nwere ọkara mkpuchi
Mkpụrụ SiC nke nwere ọkara mkpuchi: A na-eji N doping iji chịkwaa nguzogide nke ngwaahịa ndị na-eduzi n'ụzọ ziri ezi site n'ịkọba mmekọrịta kwekọrọ n'etiti ntinye nitrogen doping, ọnụego uto na kristal resistivity.
Ihe dị elu dị ọcha ọkara mkpuchi ihe
A na-eme ka ngwaọrụ RF nke silicon carbon nke nwere obere mkpuchi mkpuchi site na na-eto eto gallium nitride epitaxial oyi akwa na obere silicon carbide mkpụrụ iji dozie mpempe akwụkwọ silicon nitride epitaxial, gụnyere HEMT na ngwaọrụ gallium nitride RF ndị ọzọ, nke a na-ejikarị na nkwukọrịta 5G, nkwukọrịta ụgbọ ala, ngwa nchekwa, nnyefe data, ikuku.
Ọnụego eletrọn juru eju nke silicon carbide na ihe gallium nitride bụ 2.0 na 2.5 ugboro nke silicon n'otu n'otu, yabụ ugboro ọrụ silicon carbide na gallium nitride ngwaọrụ karịrị nke ngwaọrụ silicon ọdịnala. Otú ọ dị, gallium nitride ihe onwunwe nwere mwepu nke ogbenye okpomọkụ na-eguzogide, mgbe silicon carbide nwere ezigbo okpomọkụ na-eguzogide na thermal conductivity, nke nwere ike mejupụta maka ogbenye okpomọkụ iguzogide nke gallium nitride ngwaọrụ, otú ụlọ ọrụ na-ewere ọkara insulated silicon carbide dị ka mkpụrụ. , na gan epitaxial oyi akwa na-eto na silicon carbide mkpụrụ iji rụpụta ngwaọrụ RF.
Ọ bụrụ na enwere mmebi iwu, kọntaktị hichapụ
Oge nzipu: Jul-16-2024