Ụkpụrụ nka na ụzụ na usoro nke LED Epitaxial Wafers

Site na ụkpụrụ ọrụ nke LED, o doro anya na ihe epitaxial wafer bụ ihe bụ isi nke LED. N'ezie, isi ihe optoelectronic dị ka ogologo wavelength, nchapụta na voltaji na-aga n'ihu bụ ihe epitaxial na-ekpebi nke ukwuu. Teknụzụ wafer Epitaxial na akụrụngwa dị oke mkpa na usoro nrụpụta, yana Metal-Organic Chemical Vapor Deposition (MOCVD) bụ ụzọ bụ isi maka itolite obere kristal dị mkpa nke III-V, ogige II-VI, yana alloys ha. N'okpuru bụ ụfọdụ usoro ọdịnihu na teknụzụ wafer LED epitaxial.

1. Mmelite nke usoro uto nke nzọụkwụ abụọ

Ka ọ dị ugbu a, mmepụta azụmahịa na-eji usoro uto nke ụzọ abụọ, ma ọnụ ọgụgụ nke ihe ndị nwere ike ibunye n'otu oge dị oke. Ọ bụ ezie na sistemụ 6-wafer tozuru oke, igwe na-ejikwa ihe dị ka wafer 20 ka na-arụ ọrụ. Ịbawanye ọnụ ọgụgụ nke wafer na-edugakarị n'otu n'otu zuru oke na akwa epitaxial. Mmepe n'ọdịnihu ga-elekwasị anya na ntụzịaka abụọ:

• Teknụzụ na-emepe emepe nke na-enye ohere ịkwanye ihe ndị ọzọ n'otu ọnụ ụlọ mmeghachi omume, na-eme ka ha dabara adaba maka mmepụta nnukwu na mbelata ọnụ ahịa.
• Na-aga n'ihu ngwa ngwa akpaghị aka, nke a na-emegharị otu wafer.

2. Teknụzụ Hydride Vapor Phase Epitaxy (HVPE).

Teknụzụ a na-enyere aka ito ngwa ngwa nke ihe nkiri gbara ọkpụrụkpụ nwere njupụta dị ala, nke nwere ike bụrụ ihe na-eme ka uto homoepitaxial na-eji ụzọ ndị ọzọ. Na mgbakwunye, ihe nkiri GaN kewapụrụ na mkpụrụ nwere ike bụrụ ihe ọzọ maka nnukwu ibe kristal GaN. Agbanyeghị, HVPE nwere ihe ndọghachi azụ, dị ka ihe isi ike na njikwa oke nha yana ikuku mmeghachi omume na-emebi emebi na-egbochi nkwalite ọzọ na ịdị ọcha ihe GaN.

Si-doped HVPE-GAN

(a) Ọdịdị nke Si-doped HVPE-GaN reactor; (b) Onyonyo nke 800 μm- Si-doped HVPE-GaN;

(c) Nkesa ntinye uche nke ebu n'efu tinyere dayameta nke Si-doped HVPE-GaN

3. Uto Epitaxial Nhọrọ ma ọ bụ Nkà na ụzụ Uto Epitaxial

Usoro a nwere ike ibelata njupụta dislocation ma melite ogo kristal nke GaN epitaxial layers. Usoro a gụnyere:

• Ịtụnye akwa akwa GaN na mkpụrụ kwesịrị ekwesị (sapphire ma ọ bụ SiC).
• Na-etinye akwa mkpuchi mkpuchi polycrystalline SiO₂ n'elu.
• Iji fotolithography na etching mepụta windo GaN na ibe ihe mkpuchi SiO₂.N'oge uto na-esote, GaN na-ebu ụzọ na-eto eto na windo wee na-etolite n'akụkụ akụkụ SiO₂.

XKH's GaN-on-Sapphire wafer

4. Pendeo-Epitaxy Technology

Usoro a na-ebelata nke ọma ntụpọ lattice nke lattice na ndakọrịta na-ekpo ọkụ n'etiti mkpụrụ na epitaxial oyi akwa, na-emewanyewanye ogo kristal GaN. Usoro ndị a gụnyere:

• Ịkwalite akwa akwa epitaxial GaN na mkpụrụ kwesịrị ekwesị (6H-SiC ma ọ bụ Si) na-eji usoro nzọụkwụ abụọ.
• Na-eme nhọrọ etching nke epitaxial oyi akwa ruo na mkpụrụ osisi, na-eke ogidi ọzọ (GaN/ihe nchekwa / mkpụrụ) na akụkụ trenchi.
• Na-eto eto GaN ọzọ, nke na-agbatị n'akụkụ akụkụ nke ogidi GaN mbụ, kwụsịtụrụ n'elu trenches.Ebe ọ bụ na ejighị ihe nkpuchi, nke a na-ezere kọntaktị n'etiti GaN na ihe nkpuchi.

XKH's GaN-on-Silicon wafer

5. Mmepe nke UV LED Epitaxial Materials Short-Wavelength

Nke a na-atọ ntọala siri ike maka ọkụ ọkụ na-acha ọcha phosphor nke UV. Ọtụtụ phosphor dị elu nwere ike inwe obi ụtọ site na ọkụ UV, na-enye arụmọrụ dị elu karịa usoro YAG: Ce dị ugbu a, si otú ahụ na-aga n'ihu na-arụ ọrụ LED ọcha.

6. Multi-Quantum Well (MQW) Chip Technology

N'ihe owuwu MQW, a na-etinye ihe adịghị ọcha dị iche iche n'oge uto nke oyi akwa na-enwupụta ìhè iji mepụta olulu mmiri dị iche iche. Nchikota nke foton ndị a na-esi na olulu mmiri ndị a na-emepụta ìhè ọcha ozugbo. Usoro a na-eme ka arụmọrụ dị ọkụ dịkwuo mma, na-ebelata ọnụ ahịa, ma na-eme ka nkwakọ ngwaahịa dị mfe na njikwa sekit, n'agbanyeghị na ọ na-enye nnukwu nsogbu ọrụ aka.

7. Mmepe nke "Photon Recycling" Technology

Na Jenụwarị 1999, Sumitomo nke Japan mepụtara LED ọcha site na iji ihe ZnSe. Teknụzụ ahụ gụnyere ịmalite ihe nkiri CdZnSe dị mkpa na mkpụrụ nke otu kristal ZnSe. Mgbe ọkụ na-enwu, ihe nkiri ahụ na-ewepụta ìhè na-acha anụnụ anụnụ, nke na-emekọrịta ihe na mkpụrụ osisi ZnSe iji mepụta ìhè edo edo na-akwado, na-ebute ìhè ọcha. N'otu aka ahụ, ụlọ ọrụ nyocha Photonics nke Mahadum Boston dokọtara ogige semiconductor AlInGaP na GaN-LED na-acha anụnụ anụnụ iji wepụta ìhè ọcha.

8. Igwe ọkụ Epitaxial Wafer Process Flow

① Nrụpụta Wafer Epitaxial:
Mkpụrụ → Nhazi nhazi → ihe nchekwa oyi akwa → N-ụdị GaN oyi akwa → MQW ìhè-emitting oyi akwa uto → P-ụdị GaN oyi akwa uto → Annealing → Nnwale (photoluminescence, X-ray) → Epitaxial wafer

② Nrụpụta Chip:
Epitaxial wafer → Nkpuchi mkpuchi na imepụta ihe → Photolithography → Ion etching → N-ụdị electrode (deposition, annealing, etching) → P-ụdị electrode (deposition, annealing, etching) → Dicing → Chip nyochaa na grading.

ZMSH's GaN-on-SiC wafer