Site na ụkpụrụ ọrụ nke LEDs, o doro anya na ihe epitaxial wafer bụ isi ihe dị na LED. N'ezie, ihe epitaxial na-ekpebi paramita optoelectronic dị mkpa dịka ogologo oge, nchapụta, na voltaji n'ihu. Teknụzụ na akụrụngwa Epitaxial wafer dị oke mkpa na usoro mmepụta, yana Metal-Organic Chemical Vapor Deposition (MOCVD) bụ ụzọ bụ isi maka itolite akwa kristal dị gịrịgịrị nke III-V, II-VI compounds, na alloys ha. N'okpuru ebe a bụ ụfọdụ usoro n'ọdịnihu na teknụzụ epitaxial wafer LED.
1. Mmezi nke Usoro Uto Nzọụkwụ Abụọ
Ugbu a, mmepụta azụmaahịa na-eji usoro uto nke nzọụkwụ abụọ, mana ọnụọgụ nke substrates enwere ike ibu n'otu oge pere mpe. Ọ bụ ezie na sistemụ wafer isii etolitela, igwe na-ejikwa ihe dị ka wafer 20 ka na-emepe emepe. Ịba ụba ọnụọgụ wafer na-edugakarị na enweghị otu nha na akwa epitaxial. Mmepe n'ọdịnihu ga-elekwasị anya n'akụkụ abụọ:
- Mmepụta teknụzụ ndị na-enye ohere ibu ọtụtụ ihe ndị dị n'ime otu ụlọ mmeghachi omume, na-eme ka ha dịkwuo mma maka mmepụta buru ibu na mbelata ọnụ ahịa.
- Ịkwalite akụrụngwa nwere ike imegharị otu wafer nke nwere ike ịrụ ọrụ nke ọma.
2. Teknụzụ Hydride Vapor Phase Epitaxy (HVPE)
Teknụzụ a na-eme ka ihe nkiri ndị dị oke ibu na-eto ngwa ngwa nke nwere obere njupụta nke ihe na-apụ apụ, nke nwere ike ịbụ ihe ndị e ji eme ka ha too site na iji ụzọ ndị ọzọ. Na mgbakwunye, ihe nkiri GaN nke e kewapụrụ na ihe ndị dị n'okpuru nwere ike ịbụ ihe ọzọ maka obere chips otu-kristal nke GaN. Agbanyeghị, HVPE nwere ihe ndọghachi azụ, dịka ihe isi ike na njikwa ọkpụrụkpụ ziri ezi na gas mmeghachi omume na-emebi emebi nke na-egbochi mmezi ọzọ na ịdị ọcha nke ihe GaN.
HVPE-GaN nke ejiri Si-doped mee
(a) Nhazi nke ihe nrụpụta HVPE-GaN nke Si-doped; (b) Foto nke HVPE-GaN nke Si-doped dị 800 μm dị arọ;
(c) Nkesa nke mkpokọta ihe na-ebufe n'efu n'akụkụ dayameta nke HVPE-GaN nke Si-doped
3. Nkà na ụzụ Epitaxial nke nhọrọ ma ọ bụ nke sitere n'akụkụ
Usoro a nwere ike ibelata njupụta nke mgbanwe ma melite ịdị mma kristal nke akwa epitaxial GaN. Usoro a gụnyere:
- Ịtinye oyi akwa GaN n'elu ihe kwesịrị ekwesị (sapphire ma ọ bụ SiC).
- Itinye ihe mkpuchi ihu polycrystalline SiO₂ n'elu.
- Iji fotolithography na etching mepụta windo GaN na mpempe ihe mkpuchi SiO₂.N'oge uto na-esote, GaN na-eto na mbụ n'elu windo wee too n'akụkụ n'elu mpempe SiO₂.
Wafer GaN-on-Sapphire nke XKH
4. Nkà na ụzụ Pendeo-Epitaxy
Usoro a na-ebelata ntụpọ lattice nke lattice na enweghị ike ijikọ na okpomọkụ n'etiti substrate na epitaxial layer na-akpata nke ukwuu, na-eme ka ịdị mma nke GaN kristal dịkwuo mma. Usoro ndị a gụnyere:
- Ịkụ oyi akwa epitaxial GaN n'elu ihe kwesịrị ekwesị (6H-SiC ma ọ bụ Si) site na iji usoro nzọụkwụ abụọ.
- Ịmepụta ihe e ji ahọpụta oyi akwa epitaxial ruo na substrate, na-emepụta ogidi ndị ọzọ (GaN/buffer/substrate) na usoro trenchi.
- Ịkọpụta akwa GaN ndị ọzọ, nke na-agbatị n'akụkụ site na mgbidi nke ogidi GaN mbụ, nke kwụgidere n'elu olulu mmiri.Ebe ọ bụ na anaghị eji ihe mkpuchi ihu eme ihe ọ bụla, nke a na-ezere ịkpọtụrụ ihe mkpuchi ihu na GaN.
Wafer GaN-na-Silicon nke XKH
5. Mmepe nke ihe ndị dị mkpụmkpụ UV LED Epitaxial Materials
Nke a na-atọ ntọala siri ike maka LED ọcha nke dabere na phosphor nke UV na-akpali akpali. Ọtụtụ phosphor ndị dị elu nwere ike ịnụ ụtọ site na ìhè UV, na-enye arụmọrụ na-enwu enwu karịa sistemụ YAG:Ce dị ugbu a, si otú a na-eme ka arụmọrụ LED ọcha dịkwuo mma.
6. Teknụzụ Chip Multi-Quantum (MQW)
N'ime ụlọ MQW, a na-etinye ihe ndị na-adịghị ọcha dị iche iche n'oge uto nke oyi akwa na-ewepụta ìhè iji mepụta olulu mmiri dị iche iche. Njikọta nke photons sitere na olulu mmiri ndị a na-emepụta ìhè ọcha ozugbo. Usoro a na-eme ka arụmọrụ na-enwu nke ọma, na-ebelata ọnụ ahịa, ma na-eme ka nkwakọ ngwaahịa na njikwa sekit dị mfe, ọ bụ ezie na ọ na-eweta ihe ịma aka teknụzụ ka ukwuu.
7. Mmepe nke Teknụzụ "Photon Recycling"
Na Jenụwarị 1999, Sumitomo nke Japan mepụtara LED ọcha site na iji ihe ZnSe. Teknụzụ a gụnyere ịkụpụta ihe nkiri dị gịrịgịrị CdZnSe na ihe mkpuchi otu kristal ZnSe. Mgbe ejiri ọkụ eletrik mee ya, ihe nkiri ahụ na-ewepụta ìhè anụnụ anụnụ, nke na-emekọrịta ihe na ihe mkpuchi ZnSe iji mepụta ìhè odo odo agbakwunyere, nke na-eme ka ìhè ọcha pụta. N'otu aka ahụ, Ụlọ Ọrụ Nnyocha Photonics nke Mahadum Boston tinyere ihe mejupụtara AlInGaP semiconductor na GaN-LED na-acha anụnụ anụnụ iji mepụta ìhè ọcha.
8. Usoro Wafer Epitaxial nke LED
① Ịmepụta Wafer Epitaxial:
Ihe ndị dị n'okpuru ala → Nhazi ihe owuwu → Mmụba oyi akwa nchekwa → Mmụba oyi akwa GaN ụdị N → MQW Mmụba oyi akwa na-ewepụta ìhè → Mmụba oyi akwa GaN ụdị P → Mmụba oyi akwa GaN ụdị → Mwepụ → Nnwale (photoluminescence, X-ray) → Epitaxial wafer
② Mmepụta Chip:
Wafer Epitaxial → Nhazi na imepụta ihe mkpuchi ihu → Fotolithography → Ion etching → N-ụdị elektrọd (ntinye, annealing, etching) → P-ụdị elektrọd (ntinye, annealing, etching) → Dicing → Nnyocha na nhazi chip.
Wafer GaN-na-SiC nke ZMSH
Oge ozi: Julaị-25-2025


