SOI (Silicon-On-Insulator) wafersna-anọchi anya ihe semiconductor pụrụ iche nke na-egosipụta oyi akwa silicon dị nro nke kpụrụ n'elu oyi akwa oxide mkpuchi. Ọdịdị Sanwichi a pụrụ iche na-enye nkwalite arụmọrụ dị ukwuu maka ngwaọrụ semiconductor.
Ihe mejupụtara:
Igwe oyi akwa (Silicon kacha elu):
Ọkpụrụkpụ sitere na ọtụtụ nanometers ruo micrometers, na-eje ozi dị ka oyi akwa na-arụ ọrụ maka imepụta transistor.
Okwụnye oxide liri (igbe):
Igwe mkpuchi silicon dioxide (oke 0.05-15μm) nke na-ewepụ oyi akwa ngwaọrụ n'ụzọ eletrik.
Ngwa ala:
Nnukwu silicon (100-500μm gbara ọkpụrụkpụ) na-enye nkwado igwe.
Dị ka teknụzụ usoro nkwadebe si dị, a na-ekewa ụzọ usoro ihe eji eme ihe nke SOI silicon wafers dị ka: SIMOX (teknụzụ kewapụ ikuku oxygen), BESOI (teknụzụ na-ekekọta thinning), na Smart Cut (teknụzụ nke nwere ọgụgụ isi).
SIMOX (Technology injection kewapụrụ oxygen) bụ usoro na-agụnye ịgbanye ion oxygen dị elu n'ime ihe ndị na-emepụta silicon iji mepụta oyi akwa nke silicon dioxide, bụ nke a na-etinye ya n'ọnọdụ okpomọkụ dị elu iji mezie ntụpọ lattice. Isi ya bụ ntụ ntụ oxygen ion kpọmkwem iji mepụta ikuku oxygen e liri.
BESOI (teknụzụ na-ejikọta ọnụ) gụnyere ijikọ wafer silicon abụọ wee mee ka otu n'ime ha sie ike site na igwe igwe na etching kemịkalụ iji mepụta usoro SOI. Isi ihe dị na njikọ na thinning.
Smart Cut (Teknụzụ Exfoliation nwere ọgụgụ isi) na-etolite oyi akwa exfoliation site na ntụtụ hydrogen ion. Mgbe njikọta ahụ gasịrị, a na-eme ọgwụgwọ okpomọkụ iji kpochapụ wafer silicon na oyi akwa hydrogen ion, na-akpụ akwa silicon dị nro. Isi ihe bụ isi iyi hydrogen injection.
Ugbu a, enwere teknụzụ ọzọ a maara dị ka SIMBOND (teknụzụ inje oxygen injection bonding technology), nke Xinao mepụtara. N'ezie, ọ bụ ụzọ na-ejikọta ikewa ikuku oxygen na teknụzụ njikọ. N'ụzọ nkà na ụzụ a, a na-eji ikuku oxygen agbanyere dị ka oyi akwa mgbochi na-ebelata, na oyi ikuku oxygen e liri n'ezie bụ oyi akwa oxidation. Ya mere, ọ n'out oge mma parameters dị ka uniformity nke elu silicon na àgwà nke e liri oxygen oyi akwa.
SOI silicon wafers nke ụzọ teknụzụ dị iche iche arụpụtara nwere oke arụmọrụ dị iche iche ma dabara adaba maka ọnọdụ ngwa dị iche iche.
Ndị na-esonụ bụ nchịkọta nchịkọta nke uru arụmọrụ nke SOI silicon wafers, jikọtara ya na njirimara ọrụ ha na ihe ngosi ngwa n'ezie. Tụnyere na nnukwu silicon omenala, SOI nwere uru dị ukwuu na nguzozi ọsọ na ike oriri. (PS: arụmọrụ nke 22nm FD-SOI dị nso na nke FinFET, ọnụ ahịa ya na-ebelata site na 30%).
Arụmọrụ Uru | Ụkpụrụ nka nka | Ngosipụta akọwapụtara | Ihe ngosi ngwa a na-ahụkarị |
Ike Parasitic dị ala | Igwe mkpuchi mkpuchi (igbe) na-egbochi njikọta ụgwọ n'etiti ngwaọrụ na mkpụrụ | Ọsọ mgbanwe mụbara site na 15%-30%, ike oriri belatara site na 20%-50% | 5G RF, ibe nzikọrịta ozi dị elu |
Mbelata ntapu ugbu a | Igwe mkpuchi mkpuchi na-egbochi mgbapu ụzọ dị ugbu a | Mwepu nke ugbu a belatara>90%, ndụ batrị agbatịkwuru | Ngwa IoT, igwe eletrọnịkị na-eyi |
Ike Radiation emelitere | Igwe mkpuchi mkpuchi na-egbochi mkpokọta ụgwọ radieshon kpatara | Nkwenye radieshon meziri 3-5x, belata iwe iwe otu mmemme | Ụgbọ elu, akụrụngwa ụlọ ọrụ nuklia |
Njikwa mmetụta ọwa dị mkpụmkpụ | oyi akwa silicon dị mkpa na-ebelata nnyonye anya ọkụ eletrik n'etiti igbapu na isi iyi | Nkwụsi ike voltaji ọnụ ụzọ emelitere, slope subthreshold kachasị mma | Mpempe mgbagha dị elu (<14nm) |
Njikwa okpomọkụ emelitere | Igwe mkpuchi mkpuchi na-ebelata njikọ njikọ ikuku | 30% obere mkpokọta okpomọkụ, 15-25°C dị ala na-arụ ọrụ okpomọkụ | 3D ICs, akpaaka eletrọnịkị |
Nkwalite ugboro ugboro dị elu | Mbelata ikike parasitic yana nkwalite mbugharị ụgbọ | 20% obere igbu oge, na-akwado> nhazi akara ngosi 30GHz | Nkwukọrịta mmWave, ibe satịlaịtị comm |
Mgbanwe imewe abawanyela | Enweghị ọgwụ doping nke ọma achọrọ, na-akwado echiche azụ | 13%-20% obere usoro usoro, 40% njupụta njikọ dị elu | Ngwakọta-ngwaahịa ICs, Sensọ |
Mgbochi mgbochi | Igwe mkpuchi mkpuchi na-ekewapụ njikọ PN parasitic | Ọnụ ụzọ nkwụsị nke ugbu a abawanyela ruo>100mA | Igwe ọkụ dị elu |
N'ịchịkọta, uru bụ isi nke SOI bụ: ọ na-agba ọsọ ọsọ ma na-arụ ọrụ ike karị.
N'ihi njirimara arụmọrụ ndị a nke SOI, ọ nwere ngwa obosara na mpaghara chọrọ arụmọrụ ugboro ugboro na arụmọrụ ike ike.
Dị ka egosiri n'okpuru ebe a, dabere na oke mpaghara ngwa dabara na SOI, enwere ike ịhụ na RF na ngwaọrụ ike bụ ọnụ ọgụgụ ka ukwuu nke ahịa SOI.
Ubi ngwa | Oke ahịa |
RF-SOI (Ugboro redio) | 45% |
Ike SOI | 30% |
FD-SOI (Emebiela kpamkpam) | 15% |
Ngwa ngwa SOI | 8% |
Ihe mmetụta SOI | 2% |
Site na uto nke ahịa dị ka nkwurịta okwu mkpanaka na ịnya ụgbọ ala kwụụrụ onwe ya, a na-atụkwa anya na wafers silicon na SOI ga-ejigide ọnụego uto.
XKH, dị ka onye na-emepụta ihe ọhụrụ na teknụzụ wafer Silicon-On-Insulator (SOI), na-ebuga ngwọta SOI zuru oke site na R&D na mmepụta olu site na iji usoro nrụpụta ụlọ ọrụ na-eduga. Pọtụfoliyo anyị zuru oke gụnyere 200mm / 300mm SOI wafers na-agbasa RF-SOI, Power-SOI na FD-SOI variants, yana njikwa ịdị mma siri ike na-eme ka njiri arụ ọrụ pụrụ iche (ọkpụrụkpụ ịdị n'otu n'ime ± 1.5%). Anyị na-enye ihe ngwọta ahaziri ahazi nke nwere olulu oxide e liri (BOX) sitere na 50nm ruo 1.5μm yana nkọwapụta resistivity dị iche iche iji mezuo ihe achọrọ. N'ịkwado afọ 15 nke nka nka na ụdọ ọkọnọ zuru ụwa ọnụ siri ike, anyị na-enye ntụkwasị obi na-enye ndị nrụpụta ihe nrụpụta SOI dị elu dị elu n'ụwa niile, na-eme ka ihe ọhụrụ dị mma na nkwukọrịta 5G, ngwa elektrọnik na ngwa ọgụgụ isi.
Oge nzipu: Eprel-24-2025