SiC wafer's abtract
Silicon carbide (SiC) wafers abụrụla mkpụrụ nke nhọrọ maka ike dị elu, nke dị elu na ngwa elektrọn dị elu n'ofe ụgbọ ala, ike mmeghari ohuru, na ngalaba ikuku. Pọtụfoliyo anyị na-ekpuchi isi ụdị polytypes na atụmatụ doping-nitrogen-doped 4H (4H-N), ọkara-insulating dị elu (HPSI), nitrogen-doped 3C (3C-N), na p-ụdị 4H / 6H (4H / 6H-P) - enyere na ọkwa atọ dị mma: PRIME (na-emepe emepe nke ọma) Nnwale usoro), na Nchọgharị (ụdị epi oyi akwa na profaịlụ doping maka R&D). Dayameta nke wafer dị 2 ″, 4″, 6″, 8″, na 12″ iji dabara ma ngwaọrụ ihe nketa yana akwa akwa dị elu. Anyị na-ewetakwa boules monocrystalline na kristal mkpụrụ gbakwasara ahụ nke ọma iji kwado uto kristal n'ime ụlọ.
Anyị 4H-N wafers na-egosipụta njupụta nke ụgbọ ala site na 1 × 10¹⁶ ruo 1 × 10¹⁹ cm⁻³ na ihe mgbochi nke 0.01-10 Ω·cm, na-ebuga agagharị elektrọn dị mma na ubi mmebi n'elu 2 MV / cm - dị mma maka Schottky diodes, na JSFET. Mpempe akwụkwọ HPSI gafere 1 × 10¹² Ω·cm resistivity nwere njupụta micropipe dị n'okpuru 0.1 cm⁻², na-ahụ na ntapu nke ntanaka maka RF na ngwaọrụ ngwa ndakwa nri. Cubic 3C-N, dị n'ụdị 2″ na 4″, na-enyere heteroepitaxy aka na silicon ma na-akwado ngwa fotonic na MEMS. P-ụdị 4H/6H-P wafers, doped na aluminom ka 1×10¹⁶–5×10¹⁸ cm⁻³, na-akwado mmeju ngwaọrụ architectures.
PRIME wafers na-enweta polishing kemịkalụ-igwe ruo <0.2 nm RMS ihu adịghị mma, nha nha nha n'okpuru 3 µm, na ụta <10 µm. Ihe ntinye DUMMY na-eme ngwa ngwa mgbakọ na ule nkwakọ ngwaahịa, ebe nyocha nyocha na-egosipụta ọkpụrụkpụ epi-layer nke 2-30 µm na bespoke doping. A na-akwado ngwaahịa niile site na X-ray diffraction (mgbatị mgbanaka <30 arcsec) na Raman spectroscopy, na ule eletriki - nha Ụlọ Nzukọ, profaịlụ C-V, na nyocha micropipe-n'ịhụ na JEDEC na SEMI kwadoro.
A na-etolite olulu ruo dayameta 150 mm site na PVT na CVD nwere njupụta dislocation n'okpuru 1 × 10³ cm⁻² yana ọnụ ọgụgụ micropipe dị ala. A na-egbutu kristal mkpụrụ n'ime 0.1º nke axis c-axis iji kwe nkwa uto mmeghari na nnukwu mịka mkpụrụ.
Site na ijikọta ọtụtụ polytypes, ụdị doping dị iche iche, akara ule dị mma, nha wafer, yana n'ime ụlọ na mmepụta mkpụrụ-kristal, ikpo okwu SiC anyị na-edozi ụdọ ọkọnọ ma na-eme ka mmepe ngwaọrụ maka ụgbọ ala eletrik, grids smart, na ngwa gburugburu ebe obibi siri ike.
SiC wafer's abtract
Silicon carbide (SiC) wafers abụrụla mkpụrụ nke nhọrọ maka ike dị elu, nke dị elu na ngwa elektrọn dị elu n'ofe ụgbọ ala, ike mmeghari ohuru, na ngalaba ikuku. Pọtụfoliyo anyị na-ekpuchi isi ụdị polytypes na atụmatụ doping-nitrogen-doped 4H (4H-N), ọkara-insulating dị elu (HPSI), nitrogen-doped 3C (3C-N), na p-ụdị 4H / 6H (4H / 6H-P) - enyere na ọkwa atọ dị mma: PRIME (na-emepe emepe nke ọma) Nnwale usoro), na Nchọgharị (ụdị epi oyi akwa na profaịlụ doping maka R&D). Dayameta nke wafer dị 2 ″, 4″, 6″, 8″, na 12″ iji dabara ma ngwaọrụ ihe nketa yana akwa akwa dị elu. Anyị na-ewetakwa boules monocrystalline na kristal mkpụrụ gbakwasara ahụ nke ọma iji kwado uto kristal n'ime ụlọ.
Anyị 4H-N wafers na-egosipụta njupụta nke ụgbọ ala site na 1 × 10¹⁶ ruo 1 × 10¹⁹ cm⁻³ na ihe mgbochi nke 0.01-10 Ω·cm, na-ebuga agagharị elektrọn dị mma na ubi mmebi n'elu 2 MV / cm - dị mma maka Schottky diodes, na JSFET. Mpempe akwụkwọ HPSI gafere 1 × 10¹² Ω·cm resistivity nwere njupụta micropipe dị n'okpuru 0.1 cm⁻², na-ahụ na ntapu nke ntanaka maka RF na ngwaọrụ ngwa ndakwa nri. Cubic 3C-N, dị n'ụdị 2″ na 4″, na-enyere heteroepitaxy aka na silicon ma na-akwado ngwa fotonic na MEMS. P-ụdị 4H/6H-P wafers, doped na aluminom ka 1×10¹⁶–5×10¹⁸ cm⁻³, na-akwado mmeju ngwaọrụ architectures.
PRIME wafers na-enweta polishing kemịkalụ-igwe ruo <0.2 nm RMS ihu adịghị mma, nha nha nha n'okpuru 3 µm, na ụta <10 µm. Ihe ntinye DUMMY na-eme ngwa ngwa mgbakọ na ule nkwakọ ngwaahịa, ebe nyocha nyocha na-egosipụta ọkpụrụkpụ epi-layer nke 2-30 µm na bespoke doping. A na-akwado ngwaahịa niile site na X-ray diffraction (mgbatị mgbanaka <30 arcsec) na Raman spectroscopy, na ule eletriki - nha Ụlọ Nzukọ, profaịlụ C-V, na nyocha micropipe-n'ịhụ na JEDEC na SEMI kwadoro.
A na-etolite olulu ruo dayameta 150 mm site na PVT na CVD nwere njupụta dislocation n'okpuru 1 × 10³ cm⁻² yana ọnụ ọgụgụ micropipe dị ala. A na-egbutu kristal mkpụrụ n'ime 0.1º nke axis c-axis iji kwe nkwa uto mmeghari na nnukwu mịka mkpụrụ.
Site na ijikọta ọtụtụ polytypes, ụdị doping dị iche iche, akara ule dị mma, nha wafer, yana n'ime ụlọ na mmepụta mkpụrụ-kristal, ikpo okwu SiC anyị na-edozi ụdọ ọkọnọ ma na-eme ka mmepe ngwaọrụ maka ụgbọ ala eletrik, grids smart, na ngwa gburugburu ebe obibi siri ike.
Foto SiC wafer
6inch 4H-N ụdị akwụkwọ data SiC wafer
| 6 inch SiC wafers mpempe akwụkwọ | ||||
| Oke | Nkeji ala | Z ọkwa | P ọkwa | D ọkwa |
| Dayameta | 149.5-150.0 mm | 149.5-150.0 mm | 149.5-150.0 mm | |
| Ọkpụrụkpụ | 4H-N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Ọkpụrụkpụ | 4H-SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Usoro Wafer | Gbanyụọ axis: 4.0° chere ihu <11-20> ±0.5° (4H-N); Na axis: <0001> ± 0.5° (4H-SI) | Gbanyụọ axis: 4.0° chere ihu <11-20> ±0.5° (4H-N); Na axis: <0001> ± 0.5° (4H-SI) | Gbanyụọ axis: 4.0° chere ihu <11-20> ±0.5° (4H-N); Na axis: <0001> ± 0.5° (4H-SI) | |
| Njupụta Micropipe | 4H-N | ≤ 0.2 cm⁻² | ≤2 cm⁻² | ≤ 15 cm⁻² |
| Njupụta Micropipe | 4H-SI | ≤ 1 cm⁻² | ≤5 cm ² | ≤ 15 cm⁻² |
| Nguzogide | 4H-N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Nguzogide | 4H-SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1 × 10⁵ Ω·cm | |
| Nhazi Flat nke izizi | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Ogologo Flat nke izizi | 4H-N | 47.5 mm ± 2.0 mm | ||
| Ogologo Flat nke izizi | 4H-SI | Ọkwa | ||
| Mwepu ihu | 3 mm | |||
| Warp/LTV/TTV/Ụta | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Isi ike | Polish | Ra ≤ 1 nm | ||
| Isi ike | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Ọnụ mgbawa | Ọ dịghị | Ogologo ngụkọta ≤ 20 mm, otu ≤ 2 mm | ||
| Efere Hex | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 0.1% | Mpaghara mkpokọta ≤ 1% | |
| Mpaghara Polytype | Ọ dịghị | Mpaghara mkpokọta ≤ 3% | Mpaghara mkpokọta ≤ 3% | |
| Mgbakwunye carbon | Mpaghara mkpokọta ≤ 0.05% | Mpaghara mkpokọta ≤ 3% | ||
| Ọkpụkpụ n'elu | Ọ dịghị | Ogologo ngụkọta ≤ 1 × dayameta wafer | ||
| ibe ibe | Ọnweghị nke enyere ikike ≥ 0.2 mm obosara & omimi | Ruo 7 ibe, ≤ 1 mm nke ọ bụla | ||
| TSD (Mgbasa nke eriri eriri) | ≤500 cm⁻² | N/A | ||
| BPD (Ntugharị ụgbọ elu) | ≤ 1000 cm⁻² | N/A | ||
| Mmetọ Elu | Ọ dịghị | |||
| Nkwakọ ngwaahịa | Multi-wafer cassette ma ọ bụ otu akpa wafer | Multi-wafer cassette ma ọ bụ otu akpa wafer | Multi-wafer cassette ma ọ bụ otu akpa wafer | |
4inch 4H-N ụdị akwụkwọ data SiC wafer
| Mpempe akwụkwọ data SiC wafer 4inch | |||
| Oke | Mmepụta MPD efu | Ọkọlọtọ Mmepụta Ọkachamara (P Ọkwa) | Ngụsị akwụkwọ (D grade) |
| Dayameta | 99.5 mm-100.0 mm | ||
| Ọkpụrụkpụ (4H-N) | 350 µm± 15 µm | 350 µm±25 µm | |
| Ọkpụrụkpụ (4H-Si) | 500 µm± 15 µm | 500 µm±25 µm | |
| Usoro Wafer | Gbanyụọ axis: 4.0° chere ihu <1120> ± 0.5° maka 4H-N; Na axis: <0001> ± 0.5° maka 4H-Si | ||
| Njupụta Micropipe (4H-N) | ≤0.2 cm⁻² | ≤2 cm ² | ≤15 cm ² |
| Njupụta Micropipe (4H-Si) | ≤1 cm ² | ≤5 cm ² | ≤15 cm ² |
| Nguzogide (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Nguzogide (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Nhazi Flat nke izizi | [10-10] ±5.0° | ||
| Ogologo Flat nke izizi | 32.5 mm ± 2.0 mm | ||
| Ogologo Flat nke abụọ | 18.0 mm ± 2.0 mm | ||
| Nhazi Flat nke abụọ | Silicon na-eche ihu: 90° CW site na isi larịị ± 5.0° | ||
| Mwepu ihu | 3 mm | ||
| LTV/TTV/Bow Warp | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Isi ike | Polish Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Edge cracks Site na nnukwu ọkụ ọkụ | Ọ dịghị | Ọ dịghị | Ogologo mkpokọta ≤10 mm; otu ogologo ≤2 mm |
| Efere Hex Site na Ìhè Dị Elu | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤0.1% |
| Mpaghara Polytype Site n'ìhè dị elu | Ọ dịghị | Mpaghara mkpokọta ≤3% | |
| Ntinye Carbon Anya Anya | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤3% | |
| Silicon dị n'elu Scratches Site na nnukwu ọkụ ọkụ | Ọ dịghị | Ogologo ngụkọta ≤1 dayameta wafer | |
| Chips Edge Site na Ìhè Dị Elu | Ọnweghị nke enyere ikike ≥0.2 mm obosara na omimi | 5 kwere, ≤1 mm nke ọ bụla | |
| Mmetọ Silicon dị n'elu site na ọkụ ọkụ dị elu | Ọ dịghị | ||
| Mkpọsa nke eriri eriri | ≤500 cm ² | N/A | |
| Nkwakọ ngwaahịa | Multi-wafer cassette ma ọ bụ otu akpa wafer | Multi-wafer cassette ma ọ bụ otu akpa wafer | Multi-wafer cassette ma ọ bụ otu akpa wafer |
4inch HPSI ụdị SiC data mpempe akwụkwọ
| 4inch HPSI ụdị SiC data mpempe akwụkwọ | |||
| Oke | Ọkwa mmepụta MPD efu (ọkwa Z) | Ọkọlọtọ Mmepụta Ọkachamara (P Ọkwa) | Ngụsị akwụkwọ (D grade) |
| Dayameta | 99.5-100.0 mm | ||
| Ọkpụrụkpụ (4H-Si) | 500 µm ± 20 µm | 500 µm ± 25 µm | |
| Usoro Wafer | Gbanyụọ axis: 4.0 ° gaa na <11-20> ± 0.5° maka 4H-N; Na axis: <0001> ± 0.5° maka 4H-Si | ||
| Njupụta Micropipe (4H-Si) | ≤1 cm ² | ≤5 cm ² | ≤15 cm ² |
| Nguzogide (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Nhazi Flat nke izizi | (10-10) ±5.0° | ||
| Ogologo Flat nke izizi | 32.5 mm ± 2.0 mm | ||
| Ogologo Flat nke abụọ | 18.0 mm ± 2.0 mm | ||
| Nhazi Flat nke abụọ | Silicon na-eche ihu: 90° CW site na isi larịị ± 5.0° | ||
| Mwepu ihu | 3 mm | ||
| LTV/TTV/Bow Warp | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Ihu ihu (C ihu) | Polish | Ra ≤1 nm | |
| Ihe isi ike (Si ihu) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Edge cracks Site na nnukwu ọkụ ọkụ | Ọ dịghị | Ogologo mkpokọta ≤10 mm; otu ogologo ≤2 mm | |
| Efere Hex Site na Ìhè Dị Elu | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤0.1% |
| Mpaghara Polytype Site n'ìhè dị elu | Ọ dịghị | Mpaghara mkpokọta ≤3% | |
| Ntinye Carbon Anya Anya | Mpaghara mkpokọta ≤0.05% | Mpaghara mkpokọta ≤3% | |
| Silicon dị n'elu Scratches Site na nnukwu ọkụ ọkụ | Ọ dịghị | Ogologo ngụkọta ≤1 dayameta wafer | |
| Chips Edge Site na Ìhè Dị Elu | Ọnweghị nke enyere ikike ≥0.2 mm obosara na omimi | 5 kwere, ≤1 mm nke ọ bụla | |
| Mmetọ Silicon dị n'elu site na ọkụ ọkụ dị elu | Ọ dịghị | Ọ dịghị | |
| Mgbasa nke eriri eriri | ≤500 cm ² | N/A | |
| Nkwakọ ngwaahịa | Multi-wafer cassette ma ọ bụ otu akpa wafer | ||
Oge nzipu: Jun-30-2025