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Nduzi zuru oke maka Wafer Silicon Carbide/SiC Wafer

Nchịkọta nke SiC wafer

 Wafesị silicon carbide (SiC)Aghọọla ihe a na-ahọrọ maka ngwa eletrọnịkị nwere ike dị elu, ugboro ugboro, na okpomọkụ dị elu n'ofe ngalaba ụgbọ ala, ike mmeghari ohuru, na ikuku. Pọtụfoliyo anyị na-ekpuchi ụdị dị iche iche na atụmatụ doping—4H-N nke a na-etinye na nitrogen (4H-N), semi-insulating dị elu (HPSI), 3C-N nke a na-etinye na nitrogen (3C-N), na ụdị p 4H/6H (4H/6H-P)—nke a na-enye na ọkwa dị mma atọ: PRIME (nke a na-eme ka ọ dị mma nke ọma, ihe ndị e ji ngwaọrụ rụọ), DUMMY (nke a na-etinye ma ọ bụ nke a na-anaghị amịcha maka nnwale usoro), na RESEARCH (akwa epi omenala na profaịlụ doping maka R&D). Dayameta wafer dị 2″, 4″, 6″, 8″, na 12″ iji dabara na ngwaọrụ ochie na ihe ndị dị elu. Anyị na-enyekwa monocrystalline boules na kristal mkpụrụ ndị a kapịrị ọnụ iji kwado uto kristal n'ime ụlọ.

Wafers 4H-N anyị nwere njupụta ndị na-ebu site na 1 × 10¹⁶ ruo 1 × 10¹⁹ cm⁻³ na nguzogide nke 0.01–10 Ω·cm, na-enye ohere ngagharị elektrọn dị mma na mgbawa n'elu 2 MV/cm—nke dị mma maka Schottky diodes, MOSFETs, na JFETs. Ihe ndị HPSI na-eme karịrị 1 × 10¹² Ω·cm resisivity yana njupụta micropipe n'okpuru 0.1 cm⁻², na-eme ka obere ntapu mmiri dị maka ngwaọrụ RF na microwave. Cubic 3C-N, dị na ụdị 2″ na 4″, na-eme ka heteroepitaxy na silicon na-akwado ngwa photonic na MEMS ọhụrụ. Wafers P-ụdị 4H/6H-P, nke ejiri aluminom mee ruo 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, na-eme ka usoro nhazi ngwaọrụ ndị ọzọ dị mfe.

A na-eme ka wafer SiC, PRIME dị ka wafers na-eme ka kemịkalụ na usoro dị ọcha ruo <0.2 nm RMS dị nro, oke ọkpụrụkpụ ya dị n'okpuru 3 µm, ma gbaa ya gburugburu <10 µm. Ihe ndị e ji mee ihe na-eme ka nnwale nhazi na nkwakọ ngwaahịa dị ngwa ngwa, ebe wafers RESEARCH nwere ọkpụrụkpụ oyi akwa nke 2–30 µm na doping ahaziri ahazi. Ngwaahịa niile nwere asambodo site na X-ray diffraction (rocking curve <30 arcsec) na Raman spectroscopy, yana ule eletriki—nhazi Hall, C–V profiling, na micropipe scanning—na-eme ka JEDEC na SEMI kwekọọ.

A na-akụ obere osisi ruo dayameta 150 mm site na PVT na CVD, njupụta nke mkpọda n'okpuru 1 × 10³ cm⁻², ọ dịkwa obere ọnụọgụ micropipe. A na-egbutu kristal mkpụrụ n'ime 0.1° nke axis c iji hụ na a ga-enwe ike itolite ọzọ ma nweta nnukwu mkpụrụ.

Site na ijikọta ọtụtụ ụdị dị iche iche, ụdị doping dị iche iche, ọkwa dị mma, nha wafer SiC, na mmepụta boule na mkpụrụ-kristal n'ime ụlọ, ikpo okwu SiC substrate anyị na-eme ka usoro ọkọnọ dị mfe ma na-eme ka mmepe ngwaọrụ maka ụgbọ ala eletrik, grid smart, na ngwa gburugburu ebe obibi sie ike.

Nchịkọta nke SiC wafer

 Wafesị silicon carbide (SiC)Aghọọla ihe a na-ahọrọ maka ngwa eletrọniki dị elu, nke na-adị elu, na nke na-ekpo ọkụ n'ofe ngalaba ụgbọ ala, ike mmeghari ohuru, na nke ikuku. Pọtụfoliyo anyị na-ekpuchi ụdị dị iche iche na atụmatụ doping—4H-N nke a na-etinye na nitrogen), nke na-eme ka ihe dị ọcha dị elu (HPSI), nke a na-etinye na nitrogen (3C-N), na nke p-type 4H/6H (4H/6H-P)—nke a na-enye na ọkwa atọ dị mma: SiC waferPRIME (ihe e ji ígwè rụọ nke ọma, nke e ji ngwaọrụ rụọ), DUMMY (a na-eteghị ma ọ bụ na-anaghị achacha maka nnwale usoro), na RESEARCH (akwa epi omenala na profaịlụ doping maka R&D). Dayameta SiC Wafer dị 2″, 4″, 6″, 8″, na 12″ iji dabara na ngwaọrụ ochie na ihe ndị dị elu. Anyị na-enyekwa monocrystalline boules na kristal mkpụrụ ndị a haziri nke ọma iji kwado uto kristal n'ime ụlọ.

Wafers 4H-N SiC anyị nwere njupụta ndị na-ebu ihe site na 1 × 10¹⁶ ruo 1 × 10¹⁹ cm⁻³ na nguzogide nke 0.01–10 Ω·cm, na-enye ohere ngagharị elektrọn dị mma na mgbawa n'elu 2 MV/cm—ọ dị mma maka diodes Schottky, MOSFETs, na JFETs. Ihe ndị HPSI na-eme karịrị 1 × 10¹² Ω·cm resisivity yana njupụta micropipe n'okpuru 0.1 cm⁻², na-eme ka obere ntapu mmiri dị maka ngwaọrụ RF na microwave. Cubic 3C-N, dị na ụdị 2″ na 4″, na-eme ka heteroepitaxy na silicon na-akwado ngwa photonic na MEMS ọhụrụ. Wafers SiC ụdị P-4H/6H-P, nke ejiri aluminom mee ruo 1 × 10¹⁶–5×10¹⁸ cm⁻³, na-eme ka usoro nhazi ngwaọrụ ndị ọzọ dị mfe.

A na-eme ka wafer SiC wafer PRIME dị ọcha site na kemịkalụ ruo na oke elu RMS nke <0.2 nm, oke ọkpụrụkpụ ya dị n'okpuru 3 µm, ma gbaa ya gburugburu <10 µm. Ihe ndị e ji mee ihe na-eme ka nnwale nhazi na nkwakọ ngwaahịa dị ngwa ngwa, ebe wafer RESEARCH nwere ọkpụrụkpụ oyi akwa nke 2–30 µm na doping ahaziri ahazi. Ngwaahịa niile nwere asambodo site na X-ray diffraction (rocking curve <30 arcsec) na Raman spectroscopy, yana ule eletriki—nhazi Hall, C–V profiling, na micropipe scanning—na-eme ka JEDEC na SEMI kwekọọ.

A na-akụ obere osisi ruo dayameta 150 mm site na PVT na CVD, njupụta nke mkpọda n'okpuru 1 × 10³ cm⁻², ọ dịkwa obere ọnụọgụ micropipe. A na-egbutu kristal mkpụrụ n'ime 0.1° nke axis c iji hụ na a ga-enwe ike itolite ọzọ ma nweta nnukwu mkpụrụ.

Site na ijikọta ọtụtụ ụdị dị iche iche, ụdị doping dị iche iche, ọkwa dị mma, nha wafer SiC, na mmepụta boule na mkpụrụ-kristal n'ime ụlọ, ikpo okwu SiC substrate anyị na-eme ka usoro ọkọnọ dị mfe ma na-eme ka mmepe ngwaọrụ maka ụgbọ ala eletrik, grid smart, na ngwa gburugburu ebe obibi sie ike ngwa ngwa.

Foto nke SiC wafer

Mpempe akwụkwọ data nke ụdị wafer SiC nke 4H-N nke dị sentimita 6

 

Mpempe akwụkwọ data wafers SiC nke dị sentimita 6
Paramita Nkebi-Paramita Ọkwa Z Ọkwa P Ọkwa D
Dayameta   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Ọkpụrụkpụ 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Ọkpụrụkpụ 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Nhazi Wafer   N'akụkụ axis: 4.0° gaa <11-20> ±0.5° (4H-N); N'akụkụ axis: <0001> ±0.5° (4H-SI) N'akụkụ axis: 4.0° gaa <11-20> ±0.5° (4H-N); N'akụkụ axis: <0001> ±0.5° (4H-SI) N'akụkụ axis: 4.0° gaa <11-20> ±0.5° (4H-N); N'akụkụ axis: <0001> ±0.5° (4H-SI)
Njupụta nke paịpụ micropipe 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Njupụta nke paịpụ micropipe 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Nguzogide 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Nguzogide 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Nhazi Ala Dị Elu nke Mbụ   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Ogologo Dị larịị nke Mbụ 4H‑N 47.5 mm ± 2.0 mm    
Ogologo Dị larịị nke Mbụ 4H‑SI Ọkpụkpọ    
Mwepu nke Ọnụọgụ     3 mm  
Warp/LTV/TTV/Bọọlụ   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Isi ike Ndị Poland Ra ≤ 1 nm    
Isi ike CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Mgbawa Ọnụ   Ọ dịghị   Ogologo mkpokọta ≤ 20 mm, otu ≤ 2 mm
Efere Hex   Mpaghara mkpokọta ≤ 0.05% Mpaghara mkpokọta ≤ 0.1% Mpaghara mkpokọta ≤ 1%
Ebe Polytype   Ọ dịghị Mpaghara mkpokọta ≤ 3% Mpaghara mkpokọta ≤ 3%
Ihe ndị metụtara kabọn   Mpaghara mkpokọta ≤ 0.05%   Mpaghara mkpokọta ≤ 3%
Mkpọcha Elu   Ọ dịghị   Ogologo mkpokọta ≤ 1 × dayameta wafer
Ibe Ọkụkọ   A naghị ekwe ka ọ bụrụ ≥ obosara na omimi nke 0.2 mm   Ruo ibe asaa, ≤ 1 mm nke ọ bụla
TSD (Mwepụ nke ihe mkpuchi eriri)   ≤ 500 cm⁻²   Enweghị
BPD (Mwepụ nke Ebe Ntọala)   ≤ 1000 cm⁻²   Enweghị
Mmetọ Elu   Ọ dịghị    
Nkwakọ ngwaahịa   Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer

Mpempe akwụkwọ data nke ụdị wafer SiC nke 4H-N nke dị sentimita 4

 

Mpempe akwụkwọ data nke wafer SiC nke dị sentimita 4
Paramita Mmepụta MPD efu Ọkwa Mmepụta Ọkọlọtọ (Ọkwa P) Akara D (Ọkwa D)
Dayameta 99.5 mm–100.0 mm
Ọkpụrụkpụ (4H-N) 350 µm±15 µm   350 µm±25 µm
Ọkpụrụkpụ (4H-Si) 500 µm±15 µm   500 µm±25 µm
Nhazi Wafer N'akụkụ axis: 4.0° gaa <1120> ±0.5° maka 4H-N; N'akụkụ axis: <0001> ±0.5° maka 4H-Si    
Njupụta nke paịpụ micropipe (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Njupụta nke paịpụ micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Nguzogide (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Nguzogide (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Nhazi Ala Dị Elu nke Mbụ   [10-10] ±5.0°  
Ogologo Dị larịị nke Mbụ   32.5 mm ±2.0 mm  
Ogologo Dị larịị nke Abụọ   18.0 mm ±2.0 mm  
Nhazi nke Abụọ nke Dị larịị   Ihu silicon dị elu: 90° CW site na prime flat ±5.0°  
Mwepu nke Ọnụọgụ   3 mm  
LTV/TTV/Bọọlụ Egbugbere Egbugbere ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Isi ike Ra nke Poland ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Mgbawa Ọkụ Site na Ọkụ Ike Dị Elu Ọ dịghị Ọ dịghị Ogologo mkpokọta ≤10 mm; ogologo otu ≤2 mm
Efere Hex Site na Ìhè Dị Ike Mpaghara mkpokọta ≤0.05% Mpaghara mkpokọta ≤0.05% Mpaghara mkpokọta ≤0.1%
Ebe Polytype Site na Ọkụ Dị Ike Ọ dịghị   Mpaghara mkpokọta ≤3%
Ihe Ndị A Na-ahụ Anya Banyere Carbon Mpaghara mkpokọta ≤0.05%   Mpaghara mkpokọta ≤3%
Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike Ọ dịghị   Ogologo mkpokọta ≤1 dayameta wafer
Iberibe Edge site na High Intensity Light Ọ dịghị ihe e kwere ka ≥0.2 mm obosara na omimi   5 e kwere, ≤1 mm nke ọ bụla
Mmetọ Elu Silikọn Site na Ìhè Dị Ike Ọ dịghị    
Mwepụ nke skru eri ≤500 cm⁻² Enweghị  
Nkwakọ ngwaahịa Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer

Mpempe akwụkwọ data nke ụdị HPSI SiC wafer nke dị sentimita 4

 

Mpempe akwụkwọ data nke ụdị HPSI SiC wafer nke dị sentimita 4
Paramita Ọkwa Mmepụta MPD efu (Ọkwa Z) Ọkwa Mmepụta Ọkọlọtọ (Ọkwa P) Akara D (Ọkwa D)
Dayameta   99.5–100.0 mm  
Ọkpụrụkpụ (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Nhazi Wafer N'akụkụ dị n'akụkụ: 4.0° gaa <11-20> ±0.5° maka 4H-N; N'akụkụ dị n'akụkụ: <0001> ±0.5° maka 4H-Si
Njupụta nke paịpụ micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Nguzogide (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Nhazi Ala Dị Elu nke Mbụ (10-10) ±5.0°
Ogologo Dị larịị nke Mbụ 32.5 mm ±2.0 mm
Ogologo Dị larịị nke Abụọ 18.0 mm ±2.0 mm
Nhazi nke Abụọ nke Dị larịị Ihu silicon dị elu: 90° CW site na prime flat ±5.0°
Mwepu nke Ọnụọgụ   3 mm  
LTV/TTV/Bọọlụ Egbugbere Egbugbere ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Isi ike (ihu C) Ndị Poland Ra ≤1 nm  
Isi ike (Ihu Si) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Mgbawa Ọkụ Site na Ọkụ Ike Dị Elu Ọ dịghị   Ogologo mkpokọta ≤10 mm; ogologo otu ≤2 mm
Efere Hex Site na Ìhè Dị Ike Mpaghara mkpokọta ≤0.05% Mpaghara mkpokọta ≤0.05% Mpaghara mkpokọta ≤0.1%
Ebe Polytype Site na Ọkụ Dị Ike Ọ dịghị   Mpaghara mkpokọta ≤3%
Ihe Ndị A Na-ahụ Anya Banyere Carbon Mpaghara mkpokọta ≤0.05%   Mpaghara mkpokọta ≤3%
Ọkpụkpọ Elu Silikọn Site na Ìhè Dị Ike Ọ dịghị   Ogologo mkpokọta ≤1 dayameta wafer
Iberibe Edge site na High Intensity Light Ọ dịghị ihe e kwere ka ≥0.2 mm obosara na omimi   5 e kwere, ≤1 mm nke ọ bụla
Mmetọ Elu Silikọn Site na Ìhè Dị Ike Ọ dịghị   Ọ dịghị
Mgbasa nke Skrọ Eriri ≤500 cm⁻² Enweghị  
Nkwakọ ngwaahịa   Kaseti nwere ọtụtụ wafer ma ọ bụ otu wafer  

Ngwa SiC wafer

 

  • Modulu Ike SiC Wafer maka Ndị Na-agbanwe EV
    MOSFET na diodes nke dabere na SiC wafer nke e wuru na SiC wafer substrates dị elu na-enye mfu mgbanwe dị oke ala. Site na iji teknụzụ SiC wafer, modulu ike ndị a na-arụ ọrụ na voltaji na okpomọkụ dị elu, na-eme ka inverters traction dị irè karị. Ijikọta wafer SiC na ọkwa ike na-ebelata ihe achọrọ maka oyi na akara ụkwụ, na-egosipụta ikike zuru oke nke mmepụta wafer SiC.

  • Ngwaọrụ RF na 5G dị elu na Wafer SiC
    Ihe ndị na-eme ka amplifiers na swiitị RF rụọ na nyiwe SiC wafer nke na-ekpuchi ihe na-egosi ike okpomọkụ dị elu na voltaji mmebi. Ihe ndị na-eme ka SiC wafer dị na-ebelata mfu dielectric na ugboro GHz, ebe ike ihe SiC wafer na-enye ohere maka ọrụ kwụsiri ike n'okpuru ọnọdụ okpomọkụ dị elu na ike dị elu - na-eme ka SiC wafer bụrụ ihe a họọrọ maka ọdụ ntọala 5G na sistemụ radar nke ọgbọ na-esote.

  • Ihe ndị na-emepụta optoelectronic na LED sitere na SiC Wafer
    LED ndị a na-acha anụnụ anụnụ na UV nke a na-akọ n'elu SiC wafer substrates na-erite uru site na nhazi lattice dị mma na mwepụ okpomọkụ. Iji wafer SiC nke a na-egbuke egbuke nke C-face na-eme ka akwa epitaxial dị otu, ebe ike dị na SiC wafer na-eme ka wafer dị nro ma nwee ike ịchekwa ngwa a pụrụ ịtụkwasị obi. Nke a na-eme ka wafer SiC bụrụ ikpo okwu a na-ahụkarị maka ngwa LED dị ike ma dị ogologo ndụ.

Ajụjụ na Azịza nke SiC wafer

1. A: Kedu ka esi emepụta wafer SiC?


A:

A na-emepụta wafer SiCNzọụkwụ zuru ezu

  1. Wafers SiCNkwadebe Ihe Ndị E Ji Arụ Ọrụ

    • Jiri ntụ ntụ SiC nke ọkwa ≥5N (ihe na-adịghị ọcha ≤1 ppm).
    • Ghichaa ma sie ya tupu oge eruo iji wepụ ihe ndị fọdụrụ na carbon ma ọ bụ nitrogen.

  1. SiCNkwadebe Mkpụrụ Crystal

    • Were otu iberibe kristal 4H-SiC, bee ya n'akụkụ 〈0001〉 ruo ~10 × 10 mm².

    • Nchacha ziri ezi ruo na Ra ≤0.1 nm na akara nhazi kristal.

  2. SiCUto PVT (Njem Uzuoku Anụ Ahụ)

    • Ibu graphite crucible: ala ya na ntụ ntụ SiC, n'elu ya na kristal mkpụrụ.

    • Gbapụ ruo 10⁻³–10⁻⁵ Torr ma ọ bụ azụ azụ na helium dị ọcha nke ukwuu na 1 atm.

    • Kpoo ebe a na-esi enweta okpomọkụ ruo 2100–2300 ℃, debe mpaghara mkpụrụ ahụ ka ọ dị jụụ ruo 100–150 ℃.

    • Jikwaa ọnụego uto na 1–5 mm/h iji hazie ogo na mmepụta.

  3. SiCỊkpọchi Ingot

    • Tinye SiC ingot ahụ n'ime ite ọkụ ruo 1600-1800 ℃ ruo awa 4-8.

    • Ebumnuche: belata nrụgide okpomọkụ ma belata njupụta dislocation.

  4. SiCỊcha Wafer

    • Jiri waya diamond bee ingot ahụ n'ime wafers dị ọkpụrụkpụ nke 0.5–1 mm.

    • Belata mkpọtụ na ike dị n'akụkụ iji zere obere mgbawa.

  5. SiCWaferỊgweri na Ịchacha

    • Ịkpụcha ihe siri ikeiji wepụ mmebi osisi e ji akwọ osisi (ike ruru 10–30 µm).

    • Ịkpụcha nke ọmaiji nweta ịdị larịị ≤5 µm.

    • Ịchacha Kemịkalụ na Mechanical Polishing (CMP)iru ihe dị ka enyo (Ra ≤0.2 nm).

  6. SiCWaferNhicha na Nnyocha

    • Nhicha Ultrasonicna ngwọta Piranha (H₂SO₄: H₂O₂), mmiri DI, wee IPA.

    • XRD/Raman spectroscopyiji kwado ụdị polytype (4H, 6H, 3C).

    • Interferometryiji tụọ nha dị larịị (<5 µm) na ogologo (<20 µm).

    • Nnyocha isi anọiji nwalee iguzogide (dịka ọmụmaatụ HPSI ≥10⁹ Ω·cm).

    • Nnyocha ntụpọn'okpuru igwe onyonyo ọkụ polarized na ihe nnwale ọkọ.

  7. SiCWaferNhazi na Nhazi

    • Hazie wafers site na ụdị polytype na ụdị eletriki:

      • Ụdị N-4H-SiC (4H-N): njupụta nke ihe na-ebu 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC Elu Dị Ọcha Semi-Mkpuchi (4H-HPSI): iguzogide ≥10⁹ Ω·cm

      • Ụdị N-6H-SiC (6H-N)

      • Ndị ọzọ: 3C-SiC, ụdị P, wdg.

  8. SiCWaferNkwakọ ngwaahịa na Mbupu

    • Tinye ya n'ime igbe wafer dị ọcha, nke na-enweghị uzuzu.

    • Dee igbe ọ bụla na dayameta, ọkpụrụkpụ, ụdị polytype, ọkwa resistive, na nọmba ogbe.

      Wafers SiC

2. Ajụjụ: Kedu uru dị na wafer SiC karịa wafer silicon?


A: Ma e jiri ya tụnyere wafer silicon, wafer SiC na-enyere aka:

  • Ọrụ voltaji dị elu(>1,200 V) nke nwere obere mgbochi ọkụ.

  • Nkwụsi ike okpomọkụ dị elu(>300 °C) na njikwa okpomọkụ ka mma.

  • Ọsọ mgbanwe ngwa ngwayana obere mfu mgbanwe, na-ebelata oyi na nha nke sistemụ na ndị na-agbanwe ike.

4. Ajụjụ: Kedu ntụpọ ndị a na-ahụkarị na-emetụta mmepụta na arụmọrụ SiC wafer?


A: Nsogbu ndị bụ isi dị na wafers SiC gụnyere obere paịpụ, basal plane dislocations (BPDs), na scratches elu. Micropipes nwere ike ibute ọdịda ngwaọrụ dị egwu; BPDs na-abawanye iguzogide n'oge na-aga; na scratches elu na-eduga na mgbawa wafer ma ọ bụ uto epitaxial na-adịghị mma. Ya mere, nyocha siri ike na mbelata ntụpọ dị mkpa iji mee ka mmepụta wafer SiC dịkwuo elu.

Oge ozi: Juun-30-2025
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