Ka ọ dị ugbu a, ụlọ ọrụ anyị nwere ike ịga n'ihu na-enye obere ogbe nke 8inchN ụdị SiC wafers, ọ bụrụ na ị nwere mkpa nlele, biko nweere onwe gị ịkpọtụrụ m. Anyị nwere ụfọdụ wafer dị njikere ibupu.
N'ihe gbasara ihe semiconductor, ụlọ ọrụ ahụ emeela nnukwu ọganihu na nyocha na mmepe nke nnukwu kristal SiC. Site na iji kristal mkpụrụ nke ya mgbe ọtụtụ agba nke dayameta gbasaa, ụlọ ọrụ ahụ etolitela kristal 8-inch N-ụdị SiC nke ọma, nke na-edozi nsogbu ndị siri ike dị ka ubi okpomọkụ na-enweghị isi, mgbawa kristal na nkesa gas na-ekesa akụrụngwa na-eto eto. 8-inch SIC kristal, ma na-eme ka uto nke kristal SIC buru ibu na teknụzụ nhazi kwụụrụ onwe yana njikwa. Mee ka nnukwu asọmpi ụlọ ọrụ ahụ dị na ụlọ ọrụ mkpụrụ kristal SiC. N'otu oge ahụ, ụlọ ọrụ na-arụsi ọrụ ike na-akwalite ìgwè nke nkà na ụzụ na usoro nke nnukwu size silicon carbide mkpụrụ nkwadebe nnwale akara, na-ewusi teknuzu mgbanwe na ulo oru mmekota na upstream na downstream ubi, na collaborates na ndị ahịa ka mgbe niile iterate ngwaahịa arụmọrụ, na nkwonkwo. na-akwalite ngwa ngwa nke ngwa mmepụta ihe nke silicon carbide.
| 8inch N-ụdị SiC DSP Species | |||||
| Nọmba | Ihe | Nkeji | Mmepụta | Nyocha | Dummy |
| 1. Parameters | |||||
| 1.1 | polytype | -- | 4H | 4H | 4H |
| 1.2 | nghazi elu | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2. Igwe ọkụ eletrik | |||||
| 2.1 | dopant | -- | n-ụdị Nitrogen | n-ụdị Nitrogen | n-ụdị Nitrogen |
| 2.2 | resistivity | ohm · cm | 0.015-0.025 | 0.01-0.03 | NA |
| 3. Mechanical paramita | |||||
| 3.1 | dayameta | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | ọkpụrụkpụ | μm | 500± 25 | 500± 25 | 500± 25 |
| 3.3 | Ntuzi aka notch | ° | [1-100]±5 | [1-100]±5 | [1-100]±5 |
| 3.4 | Omimi Ọkwa | mm | 1-1.5 | 1-1.5 | 1-1.5 |
| 3.5 | LTV | μm | ≤5 (10mm*10mm) | ≤5 (10mm*10mm) | ≤10 (10mm*10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Ụta | μm | -25-25 | -45-45 | -65-65 |
| 3.8 | Warp | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | ≤0.2 | ≤0.2 | ≤0.2 |
| 4. Ihe owuwu | |||||
| 4.1 | njupụta micropipe | ihe / cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | ígwè ọdịnaya | atom / cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | ihe / cm2 | ≤500 | ≤1000 | NA |
| 4.4 | BPD | ihe / cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | TED | ihe / cm2 | ≤7000 | ≤10000 | NA |
| 5. Mma mma | |||||
| 5.1 | n'ihu | -- | Si | Si | Si |
| 5.2 | elu imecha | -- | Si-ihu CMP | Si-ihu CMP | Si-ihu CMP |
| 5.3 | urughuru | ea/wafer | ≤100 (nha≥0.3μm) | NA | NA |
| 5.4 | ọkọ | ea/wafer | ≤5, ngụkọta ogologo≤200mm | NA | NA |
| 5.5 | Ọnụ ibe / indents / mgbawa / ntụpọ / mmetọ | -- | Ọ dịghị | Ọ dịghị | NA |
| 5.6 | Mpaghara polytype | -- | Ọ dịghị | Mpaghara ≤10% | Mpaghara ≤30% |
| 5.7 | akara n'ihu | -- | Ọ dịghị | Ọ dịghị | Ọ dịghị |
| 6. Azụ àgwà | |||||
| 6.1 | azụ imecha | -- | C-ihu MP | C-ihu MP | C-ihu MP |
| 6.2 | ọkọ | mm | NA | NA | NA |
| 6.3 | Akụkụ ntụpọ azụ ibe / indents | -- | Ọ dịghị | Ọ dịghị | NA |
| 6.4 | Azụ isi ike | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Akara azụ | -- | Ọkwa | Ọkwa | Ọkwa |
| 7. Egwu | |||||
| 7.1 | onu | -- | Chamfer | Chamfer | Chamfer |
| 8. ngwugwu | |||||
| 8.1 | nkwakọ ngwaahịa | -- | Epi-njikere na agụụ nkwakọ ngwaahịa | Epi-njikere na agụụ nkwakọ ngwaahịa | Epi-njikere na agụụ nkwakọ ngwaahịa |
| 8.2 | nkwakọ ngwaahịa | -- | Multi-wafer ngwugwu cassette | Multi-wafer ngwugwu cassette | Multi-wafer ngwugwu cassette |
Oge nzipu: Eprel-18-2023