Ụzọ bụ isi maka itolite silicon carbide single crystals gụnyere Physical Vapor Transport (PVT), Top-Seeded Solution Growth (TSSG), na High-Temperature Chemical Vapor Deposition (HT-CVD).

N'ime ndị a, usoro PVT aghọwo usoro bụ isi maka mmepụta mmepụta ihe n'ihi nhazi ngwa ngwa ya dị mfe, ịdị mfe nke ịrụ ọrụ na njikwa, yana obere akụrụngwa na ụgwọ ọrụ.

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Isi Nka na ụzụ nke SiC Crystal Growth Iji Ụzọ PVT

Iji tolite kristal silicon carbide site na iji usoro PVT, a ga-ejikwa nlezianya chịkwaa ọtụtụ akụkụ teknụzụ:

1. Ịdị ọcha nke ihe eserese n'ubi okpomọkụ
   Ihe graphite a na-eji na kristal na-eto ọkụ ga-enwerịrị ihe achọrọ ịdị ọcha. Ọdịnaya adịghị ọcha na akụrụngwa graphite kwesịrị ịdị n'okpuru 5 × 10⁻⁻, yana maka ikpuchi mmetụta n'okpuru 10 × 10⁻⁻. Kpọmkwem, ọdịnaya nke boron (B) na aluminom (Al) ga-adị n'okpuru 0.1 × 10⁻⁶.

2. Polarity nke kristal mkpụrụ ziri ezi
   Data empirical na-egosi na C-ihu (0001) dabara adaba maka kristal 4H-SiC na-eto eto, ebe Si-face (0001) kwesịrị ekwesị maka uto 6H-SiC.

3. Ojiji nke kristal Mkpụrụ Off-Axis
   Mkpụrụ dịpụrụ adịpụ nwere ike gbanwee nha nha nha nha, belata ntụpọ kristal, ma kwalite ogo kristal ka mma.

4. Usoro kristal a pụrụ ịdabere na ya
   Njikọ dị mma n'etiti kristal mkpụrụ na ihe njide dị mkpa maka nkwụsi ike n'oge uto.

5. Idokwa nkwụsi ike nke Interface Uto
   N'oge okirikiri uto kristal niile, interface uto ga-adịgide adịgide iji hụ na mmepe kristal dị elu.

 

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Teknụzụ Core dị na SiC Crystal Growth

1. Teknụzụ Doping maka ntụ ntụ SiC

Doping SiC ntụ ntụ na cerium (Ce) nwere ike ime ka uto nke otu polytype dị ka 4H-SiC kwụsie ike. Omume egosila na Ce doping nwere ike:

• Mmụba ọnụego uto nke kristal SiC;

• Melite nghazi kristal maka uto otu na ntụzịaka karịa;

• Belata adịghị ọcha na ntụpọ;

• Kwụsị corrosion azụ nke kristal;

• Melite ọnụego mkpụrụ kristal otu.

2. Njikwa Axial na Radial Thermal Gradients

Axial okpomọkụ gradients na-emetụta polytype kristal na ọnụego uto. Ihe gradient nke dị obere nwere ike iduga ntinye polytype yana mbelata ibuga ihe n'oge uzuoku. Ịkwalite ma axial na radial gradients dị oke mkpa maka uto kristal ngwa ngwa na kwụsiri ike na ịdị mma na-agbanwe agbanwe.

3. Teknụzụ njikwa Basal Plane Dislocation (BPD).

BPDs na-etolite tumadi n'ihi nrụgide shiee kariri ọnụ ụzọ dị oke egwu na kristal SiC, na-eme ka sistemu mwepu rụọ ọrụ. Dị ka BPD na-adabere na ntụzịaka uto, ha na-ebilite n'oge uto kristal na jụrụ oyi. Ibelata nchekasị dị n'ime nwere ike ibelata njupụta BPD nke ukwuu.

4. Njikwa oke nhazi nke vepor Phase

Ịbawanye ogo carbon-to-silicon na vapor phase bụ usoro egosipụtara maka ịkwalite uto otu ụdị polytype. Oke C/Si dị elu na-ebelata nchịkọta macrostep ma na-ejigide ihe nketa elu site na kristal mkpụrụ, si otú a na-egbochi nhazi nke ụdị polytypes na-achọghị.

5. Usoro Uto Uto Nchegbu

Nchegbu n'oge uto kristal nwere ike iduga na ụgbọ elu lattice gbagọrọ agbagọ, mgbawa, na njupụta BPD dị elu. Nrụrụ ndị a nwere ike ibuga n'ọkwa epitaxial ma nwee mmetụta na-adịghị mma maka ịrụ ọrụ ngwaọrụ.

Ọtụtụ atụmatụ iji belata nrụgide kristal gụnyere:

• Na-edozi nkesa ebe okpomọkụ na usoro usoro iji kwalite uto nha nha nso;

• Na-emezi atụmatụ crucible iji mee ka kristal na-eto n'efu na-enweghị mmachi arụ ọrụ;

• Ịkwalite nhazi nke mkpụrụ osisi iji belata mgbasawanye ọkụ ọkụ n'etiti mkpụrụ na graphite n'oge okpomọkụ, mgbe mgbe site na ịhapụ oghere 2 mm n'etiti mkpụrụ na njide;

• Na-emezi usoro mgbakasị ahụ, na-ekwe ka kristal daa na ọkụ ọkụ, na imezi ọnọdụ okpomọkụ na oge iji belata nrụgide dị n'ime.

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Ọnọdụ na teknụzụ uto SiC Crystal

1. Nnukwu kristal nha
SiC otu dayameta kristal abawanyela site na milimita ole na ole ruo 6-inch, 8-inch, na ọbụna wafer 12-inch. Nnukwu wafer na-akwalite nrụpụta mmepụta ma belata ọnụ ahịa, ebe ọ na-emezu ihe achọrọ nke ngwa ngwaọrụ dị elu.

2. Ogo kristal dị elu
kristal SiC dị elu dị mkpa maka ngwaọrụ arụ ọrụ dị elu. N'agbanyeghị mmụba dị ịrịba ama, kristal dị ugbu a ka na-egosipụta ntụpọ dị ka micropipes, dislocations, na adịghị ọcha, ihe niile nwere ike imebi arụmọrụ ngwaọrụ na ntụkwasị obi.

3. Mbelata ọnụ ahịa
Mmepụta kristal SiC ka dị oke ọnụ, na-egbochi nnabata sara mbara. Mbelata ọnụ ahịa site na usoro uto kachasị mma, ịbawanye arụmọrụ mmepụta yana ọnụ ala akụrụngwa dị oke mkpa maka ịgbasa ngwa ahịa.

4. Nrụpụta ọgụgụ isi
Site na ọganihu na ọgụgụ isi na nnukwu teknụzụ data, uto SiC kristal na-aga n'ihu na usoro ọgụgụ isi, na-akpaghị aka. Ihe mmetụta na sistemu njikwa nwere ike nyochaa ma mezie ọnọdụ uto n'oge dị adị, na-eme ka nkwụsi ike usoro na ịkọ amụma. Nchịkọta data nwere ike ibuli usoro paramita na ogo kristal.

Mmepe nke teknụzụ uto otu kristal SiC dị elu bụ isi elekwasị anya na nyocha ihe ihe semiconductor. Ka teknụzụ na-aga n'ihu, ụzọ kristal na-eto eto ga-aga n'ihu na-agbanwe ma na-emeziwanye, na-enye ntọala siri ike maka ngwa SiC na okpomọkụ dị elu, nke dị elu, na ngwa eletrik dị elu.