Ọgbọ mbụ Ọgbọ nke abụọ ihe semiconductor nke atọ

Ihe Semiconductor esitela n'ọgbọ atọ na-agbanwe agbanwe:

 

1st Gen (Si / Ge) tọrọ ntọala nke ọgbara ọhụrụ,

2nd Gen (GaAs/InP) mebiri ihe mgbochi optoelectronic na nke dị elu iji mee ka mgbanwe ozi dị ike,

3rd Gen (SiC/GaN) na-alụ ọgụ ike na ihe ịma aka gburugburu ebe obibi, na-eme ka nnọpụiche carbon na oge 6G.

 

Ọganiihu a na-ekpughe mgbanwe ngbanwe site n'ichegharị gaa na ọkachamara na sayensị ihe onwunwe.

Ihe Semiconductor

1. Semiconductors nke ọgbọ mbụ: Silicon (Si) na Germanium (Ge)

 

Ihe ndabere akụkọ ihe mere eme

Na 1947, Bell Labs chepụtara transistor germanium, na-aka akara mmalite nke oge semiconductor. Ka ọ na-erule n'afọ 1950, silicon ji nwayọọ nwayọọ dochie germanium dị ka ntọala nke sekit agbakwunyere (ICs) n'ihi oyi akwa oxide kwụsiri ike (SiO₂) na ọtụtụ ihe nchekwa eke.

 

Njirimara ihe

Bandgap:

Germanium: 0.67eV (bandgap dị warara, ọ na-adịkarị mfe ịpụpụ ugbu a, arụ ọrụ oke ọkụ na-adịghị mma).

 

Silicon: 1.12eV (bandgap na-apụtaghị ìhè, dabara adaba maka sekit mgbagha mana enweghị ike ịmịpụta ọkụ).

 

Ⅱ,Uru nke Silicon:

Dị ka o kwesịrị ịdị, na-etolite oxide dị elu (SiO₂), na-enye aka imepụta MOSFET.

Ọnụ ala dị ala na ụwa bara ụba (~ 28% nke ihe mejupụtara crustal).

 

Ⅲ,Oke:

Mkpagharị eletrọn dị ala (naanị 1500 cm²/(V·s)), na-amachibido ịrụ ọrụ ugboro ugboro.

Voltaji na-adịghị ike / nnabata okpomọkụ (okpomọkụ kachasị arụ ọrụ. ~ 150°C).

 

Ngwa igodo

 

Ⅰ,Sekit agbakwunyere (IC):

CPUs, ibe ebe nchekwa (dịka, DRAM, NAND) dabere na silicon maka njupụta dị elu.

 

Ọmụmaatụ: Intel's 4004 (1971), microprocessor azụmahịa mbụ, jiri teknụzụ silicon 10μm.

 

Ⅱ,Ngwaọrụ ike:

Thyristors oge ochie na MOSFET obere voltaji (dịka ọmụmaatụ, ike PC) dabere na silicon.

 

Ihe ịma aka & Agaghị agabiga

 

E wepụrụ Germanium n'ihi ntanye na enweghị ike ikpo ọkụ. Agbanyeghị, oke silicon na optoelectronics na ngwa ike dị elu kpalitere mmepe nke semiconductor na-esote.

Semiconductors nke ọgbọ nke abụọ: Gallium Arsenide (GaAs) na Indium Phosphide (InP)

ndabere mmepe

N'ime 1970s-1980s, ubi na-apụta dị ka nkwukọrịta mkpanaka, netwọk fiber optic, na teknụzụ satịlaịtị mere ka a na-achọsi ike maka ngwa ngwa ngwa ngwa na ngwa ngwa optoelectronic. Nke a butere ọganihu nke semiconductor bandgap kpọmkwem dị ka GaAs na InP.

Njirimara ihe

Bandgap & Arụmọrụ Optoelectronic:

GaAs: 1.42eV (bandgap kpọmkwem, na-enye ọkụ ọkụ-nke dị mma maka lasers/LED).

InP: 1.34eV (ka mma maka ngwa ogologo ogologo ogologo, dịka, 1550nm fiber-optic Communication).

Mbugharị eletrọn

GaAs na-enweta 8500 cm²/(V·s), silicon karịrị nke ukwuu (1500 cm²/(V·s)), na-eme ka ọ dị mma maka nhazi akara mgbama GHz.

Ọdịmma

lIhe ndị na-agbaji agbagọ: O siri ike imepụta karịa silicon; Wafers GaAs na-eri 10 × karịa.

lEnweghị oxide obodo: N'adịghị ka silicon's SiO₂, GaAs/InP enweghị oxides kwụsiri ike, na-egbochi nrụpụta IC dị elu.

Ngwa igodo

lRF n'ihu-ngwugwu:

Igwe nkwuba ike mkpanaaka (PAs), transceivers satịlaịtị (dịka, transistor HEMT dabere na GaAs).

lOptoelectronics:

Laser diodes (CD/DVD draịva), LEDs (red/infrared), eriri-optic modul (InP lasers).

lIgwe Igwe Oghere Anyanwụ:

Mkpụrụ ndụ GaA na-enweta 30% arụmọrụ (vs. ~ 20% maka silicon), dị oke mkpa maka satịlaịtị. 

lNkịtị teknụzụ

Ọnụ ego dị elu na-egbochi GaAs/InP na ngwa niche dị elu, na-egbochi ha ịchụpụ ikike silicon na ibe mgbagha.

Semiconductors ọgbọ nke atọ (Wide-Bandgap Semiconductors): Silicon Carbide (SiC) na Gallium Nitride (GaN)

Ndị ọkwọ ụgbọ ala teknụzụ

Mgbanwe nke ike: Ụgbọ ala eletrik na ntinye grid ume ọhụrụ na-achọ ngwaọrụ ike na-arụ ọrụ nke ọma.

Mkpa Ugboro dị elu: nkwukọrịta 5G na sistemụ radar chọrọ ugboro ole dị elu na njupụta ike.

Mpaghara dị oke egwu: Aerospace na ngwa moto ụlọ ọrụ na-achọ ihe ndị nwere ike iguzogide okpomọkụ karịrị 200°C.

Njirimara ihe onwunwe

Uru Bandgap sara mbara:

lSiC: Bandgap nke 3.26eV, ike mgbaka ọkụ eletrik 10 × nke silicon, nke nwere ike iguzogide voltaji karịa 10kV.

lGaN: Bandgap nke 3.4eV, ngagharị elektrọn nke 2200 cm²/(V·s), na-eme nke ọma na arụmọrụ ugboro ugboro.

Njikwa okpomọkụ:

SiC's thermal conductivity ruru 4.9 W / (cm · K), okpukpu atọ karịa silicon, na-eme ka ọ dị mma maka ngwa ike dị elu.

Ihe ịma aka

SiC: Ọganihu otu kristal dị nwayọ chọrọ okpomọkụ karịa 2000 Celsius, na-ebute ntụpọ wafer na ọnụ ahịa dị elu (ihe dị ka 6-inch SiC wafer bụ 20 × dị ọnụ karịa silicon).

GaN: Enweghị mkpụrụ ndụ eke, na-achọkarị heteroepitaxy na sapphire, SiC, ma ọ bụ silicon, na-eduga n'okwu na-adakọghị ọnụ.

Ngwa igodo

Igwe eletrọnịkị ike:

Ndị ntụgharị EV (dịka ọmụmaatụ, Tesla Model 3 na-eji SiC MOSFETs, na-emeziwanye arụmọrụ site na 5–10%).

Ọdụdọ / ihe nkwụnye ọkụ na-ebu ngwa ngwa (ngwaọrụ GaN na-eme ka 100W+ chaja ngwa ngwa ma na-ebelata nha site na 50%).

Ngwa RF:

5G base station amplifiers (GaN-on-SiC PAs na-akwado ugboro mmWave).

Rada ndị agha (GaN na-enye 5 × ike njupụta nke GaAs).

Optoelectronics:

UV LEDs (ihe AlGaN eji eme ọgwụ mgbochi na ịchọpụta ogo mmiri).

Ọnọdụ ụlọ ọrụ na Outlook Ọdịnihu

SiC na-achịkwa ahịa ike dị elu, yana modul-ọkwa ụgbọ ala ugbua na-arụpụta oke, n'agbanyeghị na ọnụ ahịa ka bụ ihe mgbochi.

GaN na-agbasa ngwa ngwa na ngwa eletrọnịkị ndị ahịa (ịchaji ngwa ngwa) yana ngwa RF, na-aga n'ihu na wafer 8-inch.

Ihe na-apụta dị ka gallium oxide (Ga₂O₃, bandgap 4.8eV) na diamond (5.5eV) nwere ike ịmepụta "ọgbọ nke anọ" nke semiconductor, na-ebugharị oke voltaji gafere 20kV.

Ịdịkọ ọnụ na Mmekọrịta nke Ọgbọ Semiconductor

Mmeju, ọ bụghị nnọchi:

Silicon ka na-achịkwa na mgbanaka mgbagha na ngwa eletrọnịkị ndị ahịa (95% nke ahịa semiconductor zuru ụwa ọnụ).

GaAs na InP bụ ọkachamara na niche dị elu na optoelectronic.

SiC/GaN enweghị ike dochie anya na ike na ngwa mmepụta ihe.

Ọmụmaatụ njikọta teknụzụ:

GaN-on-Si: Na-ejikọta GaN na ngwa silicon dị ọnụ ala maka ịcha ngwa ngwa yana ngwa RF.

Ngwakọ ngwakọ SiC-IGBT: Melite arụmọrụ ntụgharị grid.

Ọdịnihu Ọdịnihu:

Ngwakọta dị iche iche: Ijikọta ihe (dịka ọmụmaatụ, Si + GaN) na otu mgbawa iji dozie arụmọrụ na ọnụ ahịa.

Ngwa bandgap dị obosara (dịka ọmụmaatụ, Ga₂O₃, diamond) nwere ike mee ka ultra-high voltaji (> 20kV) na ngwa mgbako quantum.

Mmepụta metụtara

GaAs laser epitaxial wafer 4 inch 6 inch

1 (2)

 

12 inch SIC mkpụrụ silicon carbide praịm ọkwa dayameta 300mm nnukwu nha 4H-N dabara maka mgbasa ọkụ ngwaọrụ dị elu

12inch Sic wafer 1

 


Oge nzipu: Mee-07-2025