Seramiki silicon carbide dị elu (SiC) apụtala dị ka ihe dị mma maka ihe dị mkpa na semiconductor, aerospace, na ụlọ ọrụ kemịkalụ n'ihi ike okpomọkụ ha pụrụ iche, nkwụsi ike kemịkalụ, na ike igwe. Site na mmụba nke ọchịchọ maka ngwaọrụ seramiki arụmọrụ dị elu, obere mmetọ, mmepe nke teknụzụ nkwadebe dị irè na nke a na-agbanwe agbanwe maka seramiki SiC dị elu aghọwo ihe a na-elekwasị anya n'ụwa niile. Akwụkwọ a na-enyocha usoro nkwadebe dị mkpa ugbu a maka seramiki SiC dị elu, gụnyere recrystallization sintering, pressureless sintering (PS), hot pressing (HP), spark plasma sintering (SPS), na mmepụta mgbakwunye (AM), na-elekwasị anya na ịtụle usoro sintering, paramita isi, ihe onwunwe, na ihe ịma aka ndị dị ugbu a nke usoro ọ bụla.
Ngwa nke seramiiki SiC n'ọhịa ndị agha na injinia
Ugbu a, a na-eji ihe ndị dị na seramiiki SiC dị ọcha nke ukwuu eme ihe n'ihe gbasara imepụta silicon wafer, na-esonye na usoro dị mkpa dịka oxidation, lithography, etching, na ion implantation. Site na ọganihu nke teknụzụ wafer, mmụba nke nha wafer aghọwo ihe dị mkpa. Nha wafer a na-ahụkarị ugbu a bụ 300 mm, na-enweta nguzozi dị mma n'etiti ọnụ ahịa na ikike mmepụta. Agbanyeghị, dịka iwu Moore si dị, mmepụta nke wafers 450 mm dịlarị na atụmatụ. Wafers buru ibu na-achọkarị ike nhazi dị elu iji guzogide mgbagọ na mgbanwe, na-akwalite mmụba nke ọchịchọ maka akụkụ seramiiki SiC buru ibu, siri ike, na ịdị ọcha dị elu. N'afọ ndị na-adịbeghị anya, mmepụta mgbakwunye (mbipụta 3D), dị ka teknụzụ prototyping ngwa ngwa nke na-achọghị ebu, egosipụtala nnukwu ikike n'ịmepụta akụkụ seramiiki SiC dị mgbagwoju anya n'ihi owuwu ya-site-layer na ikike imewe mgbanwe, na-adọta uche zuru ụwa ọnụ.
Akwụkwọ a ga-enyocha usoro nkwadebe ise a na-anọchite anya maka seramiiki SiC dị ọcha nke ọma - imegharị sintelaịza, imegharị sintelaịza na-enweghị nrụgide, imegharị ọkụ, imegharị sintelaịza na-egbu egbu, na imepụta ihe mgbakwunye - na-elekwasị anya na usoro imegharị sintelaịza ha, atụmatụ nhazi usoro, njirimara arụmọrụ ihe, na atụmanya ojiji ụlọ ọrụ mmepụta ihe.
Ihe achọrọ maka ihe eji emepụta silicon carbide dị ọcha
I. Ịmegharị Sintering
Carbide silicon e ji aka mee (RSiC) bụ ihe e ji SiC dị ọcha nke a kwadebere n'enweghị ihe na-eme ka sintering dị elu n'okpomọkụ dị elu nke 2100–2500°C. Kemgbe Fredriksson chọpụtara ihe na-eme ka sintering dị ọhụrụ na ngwụcha narị afọ nke 19, RSiC enwetala nlebara anya dị ukwuu n'ihi oke ọka dị ọcha ya na enweghị usoro iko na ihe ndị na-adịghị ọcha. N'okpomọkụ dị elu, SiC na-egosipụta nrụgide uzuoku dị elu, usoro sintering ya na-agụnyekarị usoro evaporation-condensation: obere mkpụrụ na-apụ apụ ma na-etinyeghachi n'elu mkpụrụ ndị buru ibu, na-akwalite uto olu na njikọ kpọmkwem n'etiti mkpụrụ, si otú a na-eme ka ike ihe dịkwuo mma.
Na 1990, Kriegesmann kwadebere RSiC na njupụta dị 79.1% site na iji ihe nkedo slip na 2200°C, ebe akụkụ obe ahụ na-egosi obere nhazi nke nwere mkpụrụ osisi siri ike na oghere. Mgbe nke ahụ gasịrị, Yi na ndị otu ya jiri ihe nkedo gel kwadebe ahụ ndụ ndụ ma sachaa ha na 2450°C, na-enweta seramiiki RSiC nwere njupụta buru ibu nke 2.53 g/cm³ na ike flexural nke 55.4 MPa.
Mbibi nke SEM nke RSiC
Ma e jiri ya tụnyere SiC dị oke arọ, RSiC nwere obere njupụta (ihe dị ka 2.5 g/cm³) na ihe dị ka 20% oghere oghere, na-egbochi arụmọrụ ya na ngwa siri ike dị elu. Ya mere, imeziwanye njupụta na njirimara mekanikal nke RSiC abụrụla isi ihe nyocha. Sung na ndị otu ya tụrụ aro ịbanye silicon agbazere agbaze n'ime kọmpat agwakọtara carbon/β-SiC ma na-emegharị ya na 2200°C, na-ewulite usoro netwọk nke mejupụtara ọka α-SiC dị nkọ. RSiC nke a rụpụtara nwetara njupụta nke 2.7 g/cm³ na ike flexural nke 134 MPa, na-eme ka usoro kwụsie ike dị mma na okpomọkụ dị elu.
Iji mee ka njupụta dịkwuo mma, Guo na ndị otu ya jiri teknụzụ polymer infiltration na pyrolysis (PIP) mee ihe maka ọtụtụ ọgwụgwọ nke RSiC. Site na iji ngwọta PCS/xylene na SiC/PCS/xylene slurries dị ka ndị na-abanye n'ime mmiri, mgbe usoro PIP 3-6 gasịrị, njupụta nke RSiC ka mma nke ukwuu (ruo 2.90 g/cm³), yana ike flexural ya. Na mgbakwunye, ha tụrụ aro atụmatụ cyclic ijikọta PIP na recrystallization: pyrolysis na 1400°C wee soro recrystallization na 2400°C, na-ewepụ ihe mgbochi nke irighiri ihe ma na-ebelata porosity. Ihe RSiC ikpeazụ nwetara njupụta nke 2.99 g/cm³ na ike flexural nke 162.3 MPa, na-egosi arụmọrụ zuru oke pụrụ iche.
Foto SEM nke mgbanwe microstructure nke RSiC a kpụchara akpụcha mgbe usoro polima impregnation na pyrolysis (PIP) - recrystallization gasịrị: Mbido RSiC (A), mgbe usoro PIP-recrystallization mbụ gasịrị (B), na mgbe usoro nke atọ gasịrị (C)
II. Ịsa Sintering n'enweghị nrụgide
A na-eji ntụ ntụ SiC dị elu nke na-adịghị emetụ n'ahụ (SiC) eme ihe seramiiki, nke a na-akpọ silicon carbide (SiC), nke a na-eji ntụ ntụ SiC dị ọcha nke ukwuu, eme ihe, a na-etinyekwa obere ihe enyemaka sintering, ma tinye ya n'ime ikuku na-adịghị emetụ n'ahụ ma ọ bụ oghere ikuku na 1800–2150°C. Usoro a dabara adaba maka imepụta akụkụ seramiiki buru ibu na nke dị mgbagwoju anya. Agbanyeghị, ebe ọ bụ na SiC nwere njikọ chiri anya, ọnụọgụ mgbasa ya dị ala nke ukwuu, na-eme ka disenfication sie ike na-enweghị ihe enyemaka sintering.
Dabere na usoro sintering, enwere ike kewaa sintering enweghị nrụgide ụzọ abụọ: sintering mmiri-usoro sintering (PLS-SiC) na sintering siri ike na-enweghị nrụgide (PSS-SiC).
1.1 PLS-SiC (Mmiri-Oge Sintering)
A na-etinyekarị PLS-SiC n'okpuru 2000°C site na itinye ihe dị ka 10 wt.% nke ihe enyemaka eutectic sintering (dịka Al₂O₃, CaO, MgO, TiO₂, na rare-earth oxides RE₂O₃) iji mepụta usoro mmiri mmiri, na-akwalite nhazi nke ihe na nnyefe oke iji nweta njupụta. Usoro a dabara adaba maka seramiiki SiC nke ụlọ ọrụ mmepụta ihe, mana enwebeghị akụkọ ọ bụla gbasara SiC dị ọcha nke a na-enweta site na sintering nke mmiri mmiri.
1.2 PSS-SiC (Ịkpọcha ihe siri ike)
PSS-SiC gụnyere njupụta siri ike na okpomọkụ karịrị 2000°C yana ihe dị ka 1 wt.% nke ihe mgbakwunye. Usoro a dabere na mgbasa atọm na nhazi ọka nke okpomọkụ dị elu na-akwalite iji belata ike elu ma nweta njupụta. Sistemụ BC (boron-carbon) bụ ngwakọta mgbakwunye a na-ahụkarị, nke nwere ike ibelata ike ókè ọka ma wepụ SiO₂ na elu SiC. Agbanyeghị, ihe mgbakwunye BC ọdịnala na-ewebata ihe ndị na-adịghị ọcha fọdụrụ, na-ebelata ịdị ọcha SiC.
Site n'ịchịkwa ọdịnaya mgbakwunye (B 0.4 wt.%, C 1.8 wt.%) na ịgbaze na 2150°C ruo awa 0.5, e nwetara seramiiki SiC dị ọcha nke nwere ịdị ọcha nke 99.6 wt.% na njupụta dị ka 98.4%. Akụkụ obere ihe owuwu ahụ gosiri mkpụrụ kọlụm (ụfọdụ gafere 450 µm n'ogologo), yana obere oghere na ókèala ọka na obere ihe graphite n'ime mkpụrụ. Seramiiki ndị ahụ gosipụtara ike flexural nke 443 ± 27 MPa, modulus na-agbanwe agbanwe nke 420 ± 1 GPa, na ọnụọgụ mgbasa okpomọkụ nke 3.84 × 10⁻⁶ K⁻¹ n'ogo okpomọkụ ụlọ ruo 600°C, na-egosi arụmọrụ zuru oke.
Nhazi obere nke PSS-SiC: (A) Foto SEM mgbe emechara mmacha na ihe e ji achọ mma NaOH; (BD) Foto BSD mgbe emechara mmacha na ihe e ji achọ mmacha
III. Ịpịcha ihe na-ekpo ọkụ
Ịpịnye ọkụ (HP) sintering bụ usoro njupụta nke na-etinye okpomọkụ na nrụgide otuaxial n'otu oge na ihe ntụ ntụ n'okpuru ọnọdụ okpomọkụ dị elu na nrụgide dị elu. Nrụgide dị elu na-egbochi mmepe oghere nke ukwuu ma na-egbochi uto ọka, ebe okpomọkụ dị elu na-akwalite njikọ ọka na nhazi nke ihe owuwu dị oke njọ, na-emesịa mepụta seramiiki SiC dị elu, dị ọcha. N'ihi ọdịdị ntụziaka nke ịpịnye, usoro a na-akpali anisotropy ọka, na-emetụta ihe onwunwe igwe na iyi.
Seramiki SiC dị ọcha siri ike ịgbaze na-enweghị ihe mgbakwunye, nke chọrọ sintering nrụgide dị elu. Nadeau na ndị otu ya kwadebere SiC siri ike nke ọma na-enweghị ihe mgbakwunye na 2500°C na 5000 MPa; Sun na ndị otu ya nwetara ihe β-SiC buru ibu na ike Vickers nke ruru 41.5 GPa na 25 GPa na 1400°C. Site na iji nrụgide GPa 4, e mepụtara seramiki SiC nwere njupụta dị nso nke ihe dị ka 98% na 99%, ike nke 35 GPa, na modulus elastic nke 450 GPa na 1500°C na 1900°C, n'otu n'otu. Ntụ ntụ SiC nke micron na 5 GPa na 1500°C wetara seramiki nwere ike nke 31.3 GPa na njupụta dị nso nke 98.4%.
Ọ bụ ezie na nsonaazụ ndị a na-egosi na nrụgide dị elu nwere ike ime ka ihe ndị na-enweghị mgbakwunye ghara ịdị irè, mgbagwoju anya na ọnụ ahịa dị elu nke akụrụngwa achọrọ na-egbochi ojiji ụlọ ọrụ mmepụta ihe. Ya mere, n'ime nkwadebe bara uru, a na-ejikarị ihe mgbakwunye ma ọ bụ ntụ ntụ mee ihe iji mee ka ike sintering dịkwuo elu.
Site na itinye resin phenolic 4 wt.% dị ka ihe mgbakwunye na sintering na 2350°C na 50 MPa, e nwetara seramiiki SiC nwere ọnụego njupụta nke 92% na ịdị ọcha nke 99.998%. Site na iji obere ego mgbakwunye (boric acid na D-fructose) na sintering na 2050°C na 40 MPa, e kwadebere SiC dị ọcha nke ukwuu nke nwere njupụta dị iche iche >99.5% na ọdịnaya B fọdụrụ nke naanị 556 ppm. Foto SEM gosiri na, ma e jiri ya tụnyere ihe nlele ndị na-enweghị nrụgide, ihe nlele ndị a na-agbanye ọkụ nwere obere mkpụrụ, obere oghere, na njupụta dị elu. Ike flexural bụ 453.7 ± 44.9 MPa, modulus ndị na-agbanwe agbanwe ruru 444.3 ± 1.1 GPa.
Site n'ịgbatị oge ijide ihe na 1900°C, nha ọka mụbara site na 1.5 μm ruo 1.8 μm, ike ikuku mụbakwara site na 155 ruo 167 W·m⁻¹·K⁻¹, ebe ọ na-emekwa ka iguzogide nchara plasma dịkwuo mma.
N'okpuru ọnọdụ okpomọkụ nke 1850°C na 30 MPa, ịpị ọkụ na ngwa ngwa nke ntụ ntụ SiC a gwakọtara agwakọta na annealed na-emepụta seramiiki β-SiC siri ike nke ọma na-enweghị ihe mgbakwunye ọ bụla, yana njupụta nke 3.2 g/cm³ na okpomọkụ sintering dị ala karịa usoro ọdịnala. Seramiiki ndị ahụ gosipụtara ike nke 2729 GPa, ike mgbawa nke 5.25–5.30 MPa·m^1/2, yana ezigbo iguzogide creep (ọnụọgụ creep nke 9.9 × 10⁻¹⁰ s⁻¹ na 3.8 × 10⁻⁹ s⁻¹ na 1400°C/1450°C na 100 MPa).
(A) Foto SEM nke elu a kpụchara akpụcha; (B) Foto SEM nke elu mgbawa; (C, D) Foto BSD nke elu a kpụchara akpụcha
N'ime nnyocha mbipụta 3D maka seramiiki piezoelectric, slurry seramiiki, dịka isi ihe na-emetụta nhazi na arụmọrụ, abụrụla isi ihe a na-elekwasị anya n'ime obodo na mba ụwa. Ọmụmụ ihe ndị a na-eme ugbu a na-egosi na paramita dịka nha ntụ ntụ, viscosity slurry, na ọdịnaya siri ike na-emetụta nke ukwuu àgwà nhazi na njirimara piezoelectric nke ngwaahịa ikpeazụ.
Nnyocha achọpụtala na ihe ndị e ji seramiiki mee nke e ji ntụ barium titanate nke micron-, submicron-, na nano-sized na-egosi nnukwu ọdịiche na usoro stereolithography (dịka ọmụmaatụ, LCD-SLA). Ka nha ihe ndị ahụ na-ebelata, viscosity nke slurry na-abawanye nke ukwuu, yana ntụ nano-sized na-emepụta slurries nwere viscosities ruru ọtụtụ ijeri mPa·s. Slurries nwere ntụ micron-sized na-adịkarị mfe delamination na peeling n'oge mbipụta, ebe ntụ submicron na nano-sized na-egosipụta àgwà nhazi kwụsiri ike karị. Mgbe a gbasasịrị okpomọkụ dị elu, ihe atụ seramiiki ndị a nwetara nwetara njupụta nke 5.44 g/cm³, ihe dị ka piezoelectric coefficient (d₃₃) nke ihe dị ka 200 pC/N, na ihe ndị na-ebelata mfu, na-egosipụta njirimara nzaghachi electromechanical dị mma.
Na mgbakwunye, na usoro micro-stereolithography, ịhazi ọdịnaya siri ike nke slurries ụdị PZT (dịka ọmụmaatụ, 75 wt.%) nyere ahụ ndị a gbanyere mkpọrọgwụ na njupụta nke 7.35 g/cm³, na-enweta usoro piezoelectric nke ruru 600 pC/N n'okpuru ubi eletriki poling. Nnyocha na nkwụghachi mgbanwe obere-scale mere ka izi ezi nke nhazi dịkwuo mma, na-eme ka izi ezi nke geometric dịkwuo elu ruo 80%.
Nnyocha ọzọ e mere na seramiiki PMN-PT nke e ji piezoelectric mee gosiri na ihe siri ike na-emetụta nhazi seramiiki na ihe onwunwe eletriki nke ukwuu. Na ihe siri ike nke ruru 80%, ihe ndị sitere na ya na-apụta ngwa ngwa na seramiiki; ka ihe siri ike na-amụba ruo 82% na karịa, ihe ndị sitere na ya na-apụ n'anya nwayọ nwayọ, ihe owuwu seramiiki ahụ wee dị ọcha karịa, yana arụmọrụ ka mma nke ukwuu. Na 82%, seramiiki ahụ gosipụtara ihe onwunwe eletriki kacha mma: ihe na-adịgide adịgide nke 730 pC/N, ikike dị n'etiti 7226, na mfu dielectric nke naanị 0.07.
Na nchịkọta, nha ihe ndị dị n'ime ya, ọdịnaya siri ike, na ihe ndị dị n'ime ya nke ihe ndị e ji seramiiki mee anaghị emetụta nkwụsi ike na izi ezi nke usoro mbipụta ahụ kamakwa ọ na-ekpebi njupụta na nzaghachi piezoelectric nke ahụ ndị e ji sintered mee kpọmkwem, na-eme ka ha bụrụ ihe dị mkpa maka inweta seramiiki piezoelectric nke 3D ebipụtara nke ọma.
Isi usoro nke mbipụta LCD-SLA 3D nke ihe nlele BT/UV
Njirimara nke seramiiki PMN-PT nwere ọdịnaya siri ike dị iche iche
IV. Spark Plasma Sintering
Spark plasma sintering (SPS) bụ teknụzụ sintering dị elu nke na-eji pulsed current na mechanical pressure eme ihe n'otu oge na-etinye na ntụ iji nweta njupụta ngwa ngwa. N'ime usoro a, current na-ekpo ọkụ ozugbo ebu na ntụ ahụ, na-emepụta okpomọkụ na plasma Joule, na-eme ka sintering dị irè n'ime obere oge (karịsịa n'ime nkeji iri). Okpomọkụ ngwa ngwa na-akwalite mgbasa elu, ebe mwepụ ọkụ na-enyere aka iwepụ gas ndị a na-etinye na oyi akwa oxide site na elu ntụ, na-eme ka arụmọrụ sintering ka mma. Mmetụta elektrọnik nke ubi elektrọnik na-akpata na-emekwa ka mgbasa atomic dịkwuo mma.
Ma e jiri ya tụnyere ịpị ọkụ nkịtị, SPS na-eji okpomọọkụ kpọmkwem, na-eme ka njupụta dị n'okpomọkụ dị ala ma na-egbochi uto ọka nke ọma iji nweta obere ihe owuwu dị mma na nke yiri ibe ha. Dịka ọmụmaatụ:
- Na-enweghị ihe mgbakwunye, iji ntụ ntụ SiC e gwepịara egwepịa dị ka ihe e ji esi nri, ịgbaze na okpomọkụ 2100°C na 70 MPa ruo nkeji iri atọ nyere ihe nlele nwere njupụta 98%.
- Nchacha na okpomọkụ 1700°C na 40 MPa ruo nkeji iri mepụtara cubic SiC nwere njupụta 98% na nha ọka dị naanị 30–50 nm.
- Iji ntụ ntụ SiC granular 80 µm na sintering na 1860°C na 50 MPa ruo nkeji ise mere ka e nwee seramiiki SiC dị elu nke nwere njupụta 98.5%, ike siri ike nke Vickers nke 28.5 GPa, ike flexural nke 395 MPa, na ike mgbawa nke 4.5 MPa·m^1/2.
Nnyocha microstructural gosiri na ka okpomọkụ sintering mụbara site na 1600°C ruo 1860°C, porosity ihe ahụ belatara nke ukwuu, na-eru nso njupụta zuru oke na okpomọkụ dị elu.
Ọdịdị obere nke seramiiki SiC e tinyere n'ọkụ dị iche iche: (A) 1600°C, (B) 1700°C, (C) 1790°C na (D) 1860°C
V. Mmepụta ihe mgbakwunye
Mmepụta ihe mgbakwunye (AM) egosila nnukwu ike n'ịmepụta ihe seramiiki dị mgbagwoju anya n'ihi usoro owuwu ya nke oyi akwa site na oyi akwa. Maka seramiiki SiC, emepụtala ọtụtụ teknụzụ AM, gụnyere binder jetting (BJ), 3DP, selective laser sintering (SLS), direct ink writing (DIW), na stereolithography (SL, DLP). Agbanyeghị, 3DP na DIW nwere obere nkenke, ebe SLS na-ebute nrụgide okpomọkụ na mgbawa. N'ụzọ dị iche, BJ na SL na-enye uru ka ukwuu n'ịmepụta seramiiki dị ọcha, nke dị oke nkenke.
- Binder Jetting (BJ)
Teknụzụ BJ gụnyere ịgbasa ihe njikọ n'ime ntụ ntụ site n'otu oyi akwa ruo na nke ọzọ, wee mechaa debinding na sintering iji nweta ngwaahịa seramiiki ikpeazụ. Ijikọta BJ na mmiri kemịkalụ (CVI), e mepụtara seramiiki SiC dị ọcha nke ukwuu, nke zuru oke nke ọma. Usoro a gụnyere:
① Ịmepụta ahụ akwụkwọ ndụ akwụkwọ ndụ SiC seramiiki site na iji BJ.
② Ịme ka CVI dị ike na 1000°C na 200 Torr.
③ Seramiiki SiC ikpeazụ nwere njupụta nke 2.95 g/cm³, ike okpomọkụ nke 37 W/m·K, na ike flexural nke 297 MPa.
Ihe osise eserese nke mbipụta ihe nrapado (BJ). (A) Ihe nlereanya nhazi kọmputa (CAD), (B) eserese eserese nke ụkpụrụ BJ, (C) mbipụta SiC site na BJ, (D) njupụta nke SiC site na ntinye anwụrụ kemịkalụ (CVI)
- Stereolithography (SL)
SL bụ teknụzụ seramiiki nke dabere na UV na-agwọ ọrịa nke nwere oke nkenke na ikike imepụta ihe owuwu dị mgbagwoju anya. Usoro a na-eji ihe ndị na-eme ka seramiiki dị nro nke nwere ọdịnaya siri ike na obere viscosity iji mepụta ahụ akwụkwọ ndụ seramiiki 3D site na photopolymerization, wee soro ya debinding na sintering okpomọkụ dị elu iji nweta ngwaahịa ikpeazụ.
Site na iji ihe ruru 35% SiC slurry, e ji ihe ruru 3D green bodies dị elu mee ihe n'okpuru ọkụ UV 405 nm ma mee ka ha dịkwuo mma site na ọkụ polymer na 800°C na ọgwụgwọ PIP. Nsonaazụ gosiri na ihe nlele e ji ihe ruru 35% slurry mee nwetara njupụta dị ka 84.8%, na-arụ ọrụ karịa otu njikwa 30% na 40%.
Site n'iwebata SiO₂ lipophilic na phenolic epoxy resin (PEA) iji gbanwee slurry ahụ, arụmọrụ photopolymerization ka mma nke ọma. Mgbe a gbasasịrị ya na 1600°C ruo awa 4, a gbanwere SiC nke ọma, ya na oxygen ikpeazụ nke naanị 0.12%, nke na-eme ka e nwee ike imepụta seramiiki SiC dị ọcha nke ukwuu, nke nwere nhazi dị mgbagwoju anya na-enweghị oxidation ma ọ bụ usoro ntinye tupu ịbanye.
Ihe osise nke usoro mbipụta akwụkwọ na usoro sintering ya. Ọdịdị nke ihe nlele ahụ mgbe ọ kpọrọ nkụ na (A) 25°C, pyrolysis na (B) 1000°C, na sintering na (C) 1600°C.
Site n'ịmepụta ihe ndị na-eme ka ihe dị nro nke Si₃N₄ dị nro maka mbipụta 3D stereolithography na iji usoro ịka nká na-adịghị mma na okpomọkụ dị elu, e kwadebere seramiiki Si₃N₄ nwere njupụta echiche 93.3%, ike nrụgide nke 279.8 MPa, na ike flexural nke 308.5–333.2 MPa. Nnyocha chọpụtara na n'okpuru ọnọdụ nke ọdịnaya siri ike nke vol. 45% na oge ikpughe sekọnd 10, enwere ike nweta ahụ ndụ ndụ otu oyi akwa nwere nkenke ọgwụgwọ ọkwa IT77. Usoro iwepụ obere okpomọkụ nwere ọnụego okpomọkụ nke 0.1 °C/min nyere aka mepụta ahụ ndụ ndụ na-enweghị mgbawa.
Ịkpọchi ihe bụ isi ihe na-emetụta arụmọrụ ikpeazụ na stereolithography. Nnyocha na-egosi na itinye ihe enyemaka ịkpụ ihe nwere ike ime ka njupụta seramiiki na njirimara igwe dịkwuo mma. Site na iji CeO₂ dị ka ihe enyemaka ịkpụ ihe na teknụzụ ọkụ eletrik na-enyere aka na ịkụ ihe iji kwadebe seramiiki Si₃N₄ dị elu, achọpụtara na CeO₂ na-ekewapụ na ókèala ọka, na-akwalite mmịpụta na njupụta ókè ọka. Seramiiki ndị a rụpụtara gosipụtara ike Vickers nke HV10/10 (1347.9 ± 2.4) na ike mgbawa nke (6.57 ± 0.07) MPa·m¹/². Site na MgO–Y₂O₃ dị ka ihe mgbakwunye, e mere ka nha nhata nke seramiiki dịkwuo mma, na-eme ka arụmọrụ dịkwuo mma. Na ngụkọta ọkwa doping nke 8 wt.%, ike flexural na conductivity okpomọkụ ruru 915.54 MPa na 59.58 W·m⁻¹·K⁻¹, n'otu n'otu.
VI. Mmechi
Na nchịkọta, seramiiki silicon carbide (SiC) dị ọcha, dịka ihe seramiiki injinia pụrụ iche, egosila ohere sara mbara maka ojiji na semiconductors, aerospace, na akụrụngwa dị oke njọ. Akwụkwọ a nyochachara ụzọ nkwadebe ise a na-ahụkarị maka seramiiki SiC dị ọcha nke ukwuu - recrystallization sintering, sintering na-enweghị nrụgide, hot pressure, spark plasma sintering, na mmepụta mgbakwunye - yana mkparịta ụka zuru ezu gbasara usoro njupụta ha, nhazi paramita dị mkpa, arụmọrụ ihe, na uru na oke dị iche iche.
O doro anya na usoro dị iche iche nke ọ bụla nwere njirimara pụrụ iche n'ihe gbasara irute ịdị ọcha dị elu, njupụta dị elu, usoro mgbagwoju anya, na ohere ụlọ ọrụ mmepụta ihe. Karịsịa, teknụzụ mmepụta ihe mgbakwunye egosila ike siri ike n'ịmepụta ihe ndị dị mgbagwoju anya na nke ahaziri ahazi, yana ihe ịga nke ọma na mpaghara ndị dị n'okpuru dịka stereolithography na binder jetting, na-eme ka ọ bụrụ ntụziaka mmepe dị mkpa maka nkwadebe seramiiki SiC dị ọcha.
Nnyocha n'ọdịnihu gbasara nkwadebe seramiiki SiC dị ọcha kwesịrị inyocha nke ọma, na-akwalite mgbanwe site na ụlọ nyocha gaa na ngwa injinia buru ibu, nke a pụrụ ịtụkwasị obi nke ukwuu, si otú a na-enye nkwado ihe dị mkpa maka mmepụta akụrụngwa dị elu na teknụzụ ozi ọgbọ na-abịa.
XKH bụ ụlọ ọrụ teknụzụ dị elu nke pụrụ iche na nyocha na mmepụta nke ihe seramiiki dị elu. Ọ raara onwe ya nye inye ngwọta ahaziri maka ndị ahịa n'ụdị seramiiki silicon carbide dị elu (SiC). Ụlọ ọrụ ahụ nwere teknụzụ nkwadebe ihe dị elu na ikike nhazi ziri ezi. Azụmaahịa ya gụnyere nyocha, mmepụta, nhazi ziri ezi, na ọgwụgwọ elu nke seramiiki SiC dị elu, na-emezu ihe achọrọ siri ike nke semiconductor, ike ọhụrụ, aerospace na mpaghara ndị ọzọ maka ihe seramiiki dị elu. Site na iji usoro sintering tozuru okè na teknụzụ nrụpụta mgbakwunye, anyị nwere ike inye ndị ahịa ọrụ otu nkwụsị site na nhazi usoro ihe, nhazi usoro dị mgbagwoju anya ruo na nhazi ziri ezi, na-ahụ na ngwaahịa ndị ahụ nwere ihe onwunwe igwe dị mma, nkwụsi ike okpomọkụ na iguzogide nchara.
Oge ozi: Julaị-30-2025