N-ụdị SiC na Si Composite Substrates Dia6inch

Nkọwa dị mkpirikpi:

N-ụdị SiC na Si mejupụtara ihe mejupụtara bụ ihe semiconductor mejupụtara oyi akwa nke n-ụdị silicon carbide (SiC) nke edobere na mkpụrụ silicon (Si).

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等级Ọkwa	Ị	P级	D级
	Obere BPD ọkwa	Ọkwa mmepụta	Ngụsị akwụkwọ
直径Dayameta	150.0 mm± 0.25mm
厚度Ọkpụrụkpụ	500 μm± 25μm
晶片方向Usoro Wafer	Gbanyụọ axis: 4.0° chere ihu <11-20> ±0.5°maka 4H-N Na axis: <0001>±0.5°maka 4H-SI
主定位边方向Flat nke izizi	{10-10}±5.0°
主定位边长度Ogologo Flat nke izizi	47.5 mm± 2.5 mm
边缘Mwepu ihu	3 mm
总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp	≤15μm /≤40μm/≤60μm
微管密度和基面位错MPD&BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Nguzogide	≥1E5 Ω·cm
表面粗糙度Isi ike	Polish Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Ọ dịghị		Ogologo ngụkọta ≤10mm, otu ogologo≤2mm
Mgbawa site na nnukwu ọkụ ọkụ
六方空洞（强光灯观测）*	Mpaghara mkpokọta ≤1%		Mpaghara mkpokọta ≤5%
Hex Plates site na nnukwu ọkụ ọkụ
多型(强光灯观测)*	Ọ dịghị		Mpaghara mkpokọta≤5%
Mpaghara Polytype site na nnukwu ọkụ ọkụ
划痕(强光灯观测)*&	3 scratches ka 1 × wafer dayameta		5 scratches ka 1× wafer dayameta
Ntucha site na nnukwu ọkụ ọkụ	ngụkọta ogologo		ngụkọta ogologo
崩边# Agba mgbawa	Ọ dịghị		5 kwere, ≤1 mm nke ọ bụla
表面污染物（强光灯观测）	Ọ dịghị
Mmetọ site na nnukwu ọkụ ọkụ