N-ụdị SiC na Si Composite Substrates Dia6inch
| 等级Ọkwa | Ị | P级 | D级 |
| Obere BPD ọkwa | Ọkwa mmepụta | Ngụsị akwụkwọ | |
| 直径Dayameta | 150.0 mm± 0.25mm | ||
| 厚度Ọkpụrụkpụ | 500 μm± 25μm | ||
| 晶片方向Usoro Wafer | Gbanyụọ axis: 4.0° chere ihu <11-20> ±0.5°maka 4H-N Na axis: <0001>±0.5°maka 4H-SI | ||
| 主定位边方向Flat nke izizi | {10-10}±5.0° | ||
| 主定位边长度Ogologo Flat nke izizi | 47.5 mm± 2.5 mm | ||
| 边缘Mwepu ihu | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm/≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Nguzogide | ≥1E5 Ω·cm | ||
| 表面粗糙度Isi ike | Polish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Ọ dịghị | Ogologo ngụkọta ≤10mm, otu ogologo≤2mm | |
| Mgbawa site na nnukwu ọkụ ọkụ | |||
| 六方空洞（强光灯观测）* | Mpaghara mkpokọta ≤1% | Mpaghara mkpokọta ≤5% | |
| Hex Plates site na nnukwu ọkụ ọkụ | |||
| 多型(强光灯观测)* | Ọ dịghị | Mpaghara mkpokọta≤5% | |
| Mpaghara Polytype site na nnukwu ọkụ ọkụ | |||
| 划痕(强光灯观测)*& | 3 scratches ka 1 × wafer dayameta | 5 scratches ka 1× wafer dayameta | |
| Ntucha site na nnukwu ọkụ ọkụ | ngụkọta ogologo | ngụkọta ogologo | |
| 崩边# Agba mgbawa | Ọ dịghị | 5 kwere, ≤1 mm nke ọ bụla | |
| 表面污染物（强光灯观测） | Ọ dịghị | ||
| Mmetọ site na nnukwu ọkụ ọkụ | |||
Eserese zuru ezu
