Njikọ Hydropholic HPSI SiCOI 4 nke dị sentimita isii

Nkọwa Dị Mkpirikpi:

A na-eji teknụzụ njikọta dị elu na ịchacha akwa 4H-SiCOI emepụta wafers semi-insulating dị elu (HPSI) 4H-SiCOI. A na-eji njikọ 4H HPSI silicon carbide eme ihe site na ijikọ ihe ndị dị na 4H HPSI silicon carbide na oyi akwa thermal oxide site na ụzọ abụọ dị mkpa: njikọ hydrophilic (kpọmkwem) na njikọ ejiri mee ihe n'elu. Nke ikpeazụ na-ewebata oyi akwa agbanwere agbanwe (dị ka amorphous silicon, aluminum oxide, ma ọ bụ titanium oxide) iji melite mma njikọ ma belata afụ, karịsịa dabara adaba maka ngwa anya. A na-enweta njikwa ọkpụrụkpụ nke oyi akwa silicon carbide site na SmartCut ma ọ bụ igweri na usoro polishing CMP dabere na ion. SmartCut na-enye nha nha ọkpụrụkpụ dị elu (50nm–900nm nwere nha nha ±20nm) mana ọ nwere ike ibute obere mmebi kristal n'ihi ntinye ion, na-emetụta arụmọrụ ngwaọrụ anya. Ịgweri na CMP polishing na-ezere mmebi ihe ma a na-ahọrọ ya maka ihe nkiri siri ike (350nm–500µm) na ngwa quantum ma ọ bụ PIC, mana na obere nha nha ọkpụrụkpụ (±100nm). Wafers nke dị sentimita isii nkịtị nwere oyi akwa SiC nke dị sentimita 1µm ±0.1µm n'elu oyi akwa SiO2 nke dị sentimita 3µm n'elu ihe ndị dị na Si nke dị sentimita 675µm, nwere ezigbo ire ụtọ n'elu (Rq < 0.2nm). Wafers HPSI SiCOI ndị a na-enye MEMS, PIC, quantum, na ngwaọrụ anya, ha na-ejikwa ezigbo ihe na mgbanwe usoro arụ ọrụ.


atụmatụ

Nchịkọta nke Njirimara SiCOI Wafer (Silicon Carbide-on-Insulator)

Wafers SiCOI bụ ihe e ji emepụta semiconductor ọhụrụ nke na-ejikọta Silicon Carbide (SiC) na oyi akwa mkpuchi, nke na-abụkarị SiO₂ ma ọ bụ sapphire, iji melite arụmọrụ na eletrọniki ike, RF, na photonics. N'okpuru ebe a bụ nkọwa zuru ezu nke ihe onwunwe ha nke e kewara n'ime ngalaba dị mkpa:

Akụ na ụba

Nkọwa

Ihe mejupụtara ihe Oyi akwa Silicon Carbide (SiC) nke ejikọtara na ihe mkpuchi (karịsịa SiO₂ ma ọ bụ sapphire)
Ọdịdị kristal Dịka ọ dị na ụdị SiC 4H ma ọ bụ 6H, a maara ya maka ịdị mma kristal dị elu na ịdị n'otu.
Njirimara Ọdụdọ Eletriki Ọdụ eletriki nwere ike imebi nke ọma (~3 MV/cm), oghere band sara mbara (~3.26 eV maka 4H-SiC), obere ọkụ eletrik na-agbapụta
Ọgbakọ okpomọkụ Oke ike okpomọkụ (~300 W/m·K), nke na-eme ka okpomọkụ dị mma
Dielectric Layer Ihe mkpuchi (SiO₂ ma ọ bụ sapphire) na-enye ikewapụ eletriki ma na-ebelata ikike parasitic
Njirimara Mekaniki Ike siri ike (~ 9 Mohs scale), ike igwe dị mma, na nkwụsi ike okpomọkụ
Mmecha Elu Ọ na-adịkarị mma nke ukwuu ma nwee obere ntụpọ, dị mma maka imepụta ngwaọrụ
Ngwa Ngwaọrụ eletrọniki ike, ngwaọrụ MEMS, ngwaọrụ RF, ihe mmetụta chọrọ oke okpomọkụ na oke voltaji

Wafers SiCOI (Silicon Carbide-on-Insulator) na-anọchite anya usoro ihe owuwu semiconductor dị elu, nke nwere akwa dị gịrịgịrị nke silicon carbide (SiC) nke ejikọtara na oyi akwa mkpuchi, nke a na-akpọkarị silicon dioxide (SiO₂) ma ọ bụ sapphire. Silicon carbide bụ semiconductor sara mbara nke a maara maka ikike ya iguzogide voltaji dị elu na okpomọkụ dị elu, yana njikwa okpomọkụ dị mma na ike igwe dị elu, na-eme ka ọ dị mma maka ngwa eletrọniki dị elu, ugboro ugboro, na okpomọkụ dị elu.

 

Ihe mkpuchi dị na wafers SiCOI na-enye ikewapụ eletriki dị irè, na-ebelata ikike parasitic na mmiri na-agbapụta n'etiti ngwaọrụ, si otú a na-eme ka arụmọrụ na ntụkwasị obi nke ngwaọrụ ahụ dịkwuo mma. A na-eme ka elu wafer ahụ dị ọcha nke ọma iji nweta ịdị nro nke ukwuu na obere ntụpọ, na-emezu ihe siri ike nke imepụta ngwaọrụ micro- na nano.

 

Nhazi ihe a abụghị naanị na ọ na-eme ka njirimara eletriki nke ngwaọrụ SiC ka mma kamakwa ọ na-eme ka njikwa okpomọkụ na nkwụsi ike igwe dịkwuo mma. N'ihi ya, a na-eji wafer SiCOI eme ihe nke ukwuu na eletrọniki ike, ihe ndị mejupụtara redio ugboro ugboro (RF), ihe mmetụta microelectromechanical systems (MEMS), na eletrọniki okpomọkụ dị elu. N'ozuzu, wafer SiCOI na-ejikọta ihe pụrụ iche nke silicon carbide na uru nkewapụ eletriki nke oyi akwa insulator, na-enye ntọala zuru oke maka ọgbọ ọzọ nke ngwaọrụ semiconductor arụmọrụ dị elu.

Ngwa wafer SiCOI

Ngwaọrụ Eletrọniki Ike

Mgbanwe voltaji dị elu na nke dị elu, MOSFETs, na diode

Rite uru site na nnukwu bandgap nke SiC, voltaji mgbawa dị elu, na nkwụsi ike okpomọkụ

Mbelata mfu ike na mmezi arụmọrụ na sistemụ mgbanwe ike

 

Ihe ndị mejupụtara ugboro redio (RF)

Transistors na amplifiers ugboro ugboro dị elu

Ike parasitic dị ala n'ihi oyi akwa mkpuchi na-eme ka arụmọrụ RF dịkwuo mma

Dabara adaba maka sistemụ nkwukọrịta 5G na radar

 

Sistemụ Microelectromechanical (MEMS)

Sensọ na ihe na-eme ihe na-arụ ọrụ na gburugburu ebe siri ike

Ike nke igwe na ike kemịkalụ na-agbatị ndụ ngwaọrụ ahụ ruo ogologo oge

Gụnyere ihe mmetụta nrụgide, accelerometers, na gyroscopes

 

Eletrọniki Okpomọkụ Dị Elu

Ngwa eletrọniki maka ụgbọ ala, aerospace, na ụlọ ọrụ mmepụta ihe

Na-arụ ọrụ nke ọma n'okpomọkụ dị elu ebe silicon na-ada ada

 

Ngwaọrụ Photonic

Njikọta na ihe ndị dị na optoelectronic na ihe mkpuchi ihe

Na-eme ka photonics dị na chip rụọ ọrụ site na njikwa okpomọkụ ka mma

Ajụjụ na Azịza nke wafer SiCOI

Q:Gịnị bụ wafer SiCOI

A:Wafer SiCOI na-anọchite anya wafer Silicon Carbide-on-Insulator. Ọ bụ ụdị ihe owuwu semiconductor ebe a na-ejikọta obere oyi akwa silicon carbide (SiC) na akwa mkpuchi, nke na-abụkarị silicon dioxide (SiO₂) ma ọ bụ mgbe ụfọdụ sapphire. Nhazi a yiri nke a na wafer Silicon-on-Insulator (SOI) a ma ama mana ọ na-eji SiC kama silicon.

Foto

Wafer SiCOI04
Achịcha SiCOI05
Wafer SiCOI09

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