HPSI SiCOI wafer 4 6inch Hydropholic bonding

Nkọwa dị mkpirikpi:

A na-emepụta wafers dị elu nke ọkara mkpuchi (HPSI) 4H-SiCOI site na iji njikọ dị elu na teknụzụ dị nro. A na-emepụta wafers site na ijikọ 4H HPSI silicon carbide substrates na thermal oxide layers site na ụzọ isi abụọ: njikọ hydrophilic (direct) na njikọ na-arụ ọrụ n'elu. Nke ikpeazụ na-ewebata oyi akwa gbanwetụrụ n'etiti (dị ka silicon amorphous, aluminum oxide, ma ọ bụ titanium oxide) iji melite ogo njikọ yana belata afụ, ọkachasị dabara adaba maka ngwa anya. A na-enweta njikwa ịdị arọ nke oyi akwa silicon carbide site na ion dabere na SmartCut ma ọ bụ egweri na usoro polishing CMP. SmartCut na-enye nha nha nha anya dị elu (50nm-900nm nwere ± 20nm n'otu) mana ọ nwere ike bute ntakịrị mmebi kristal n'ihi ntinye ion, na-emetụta arụmọrụ ngwa ngwa. Echicha na CMP polishing na-ezere mmebi ihe ma bụrụ nke a na-ahọrọ maka ihe nkiri gbara ọkpụrụkpụ (350nm-500µm) na ngwa ngwa ma ọ bụ ngwa PIC, n'agbanyeghị na enweghị oke nha (± 100nm). Ọkọlọtọ 6-inch wafer na-egosipụta 1µm ± 0.1µm SiC oyi akwa na 3µm SiO2 oyi akwa n'elu 675µm Si mkpụrụ nwere ọmarịcha elu elu (Rq <0.2nm). Ndị a HPSI SiCOI wafers na-ebute MEMS, PIC, quantum, na ngwa ngwa n'ichepụta ihe dị mma yana ngbanwe usoro.

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Atụmatụ

Nchịkọta Njirimara SiCOI Wafer (Silicon Carbide-on-Insulator).

SiCOI wafers bụ mkpụrụ semiconductor ọgbọ ọhụrụ na-ejikọta Silicon Carbide (SiC) na oyi akwa mkpuchi, mgbe mgbe SiO₂ ma ọ bụ sapphire, iji melite arụmọrụ na ngwa eletrọnịkị, RF, na fotonics. N'okpuru bụ ntụle zuru ezu nke akụrụngwa ha ekewapụtara na ngalaba isi:

Ngwongwo	Nkọwa
Ihe mejupụtara	Silicon Carbide (SiC) oyi akwa jikọtara na ihe mkpuchi mkpuchi (nke a na-ahụkarị SiO₂ ma ọ bụ sapphire)
Ọdịdị kristal	Adị 4H ma ọ bụ 6H polytypes nke SiC, mara maka ịdị elu kristal na ịdị n'otu
Ngwongwo eletriki	Igwe ọkụ eletrik dị elu (~ 3 MV / cm), bandgap sara mbara (~ 3.26 eV maka 4H-SiC), obere ntanye dị ugbu a
Nrụpụta okpomọkụ	Igwe ọkụ dị elu (~ 300 W / m·K), na-eme ka ikpochapụ ọkụ dị mma
Dielectric Layer	Igwe mkpuchi mkpuchi (SiO₂ ma ọ bụ sapphire) na-enye ikewapụ eletriki ma na-ebelata ikike parasitic.
Ihe eji arụ ọrụ	Isi ike dị elu (~ 9 Mohs scale), ike ọrụ dị mma, na nkwụsi ike ọkụ
Emecha elu elu	Na-adịkarị ultra-dị nro na njupụta ntụpọ dị ala, dabara maka imepụta ngwaọrụ
Ngwa	Eletrọnịkị ike, ngwaọrụ MEMS, ngwaọrụ RF, ihe mmetụta chọrọ oke okpomọkụ na nnabata voltaji

SiCOI wafers (Silicon Carbide-on-Insulator) na-anọchi anya ihe nrụpụta semiconductor dị elu, nke nwere akwa silicon carbide (SiC) dị elu nke jikọtara ya na akwa mkpuchi mkpuchi, ọkachasị silicon dioxide (SiO₂) ma ọ bụ sapphire. Silicon carbide bụ semiconductor obosara-bandgap mara maka ikike ya iguzogide elu voltaji na oke okpomọkụ, yana ezigbo ọkụ ọkụ na ike siri ike nke igwe dị elu, na-eme ka ọ dị mma maka ngwa eletrọnịkị dị elu, ugboro ugboro na okpomọkụ dị elu.

Igwe mkpuchi mkpuchi na SiCOI wafers na-enye ikewapụ ọkụ eletrik dị irè, na-ebelata ike nke parasitic na ọnya mmiri n'etiti ngwaọrụ, si otú a na-eme ka arụmọrụ ngwaọrụ na ntụkwasị obi dịkwuo elu. A na-asachapụ elu wafer ahụ nke ọma iji nweta ịdị nro nke nwere obere ntụpọ, na-egbo mkpa siri ike nke imepụta ngwaọrụ obere na nano.

Ọdịdị ihe a abụghị naanị na-eme ka njirimara eletriki nke ngwaọrụ SiC dịkwuo mma kamakwa ọ na-eme ka njikwa okpomọkụ na nkwụsi ike nke ígwè ọrụ dịkwuo elu. N'ihi ya, a na-eji Wafers SiCOI eme ihe n'ọtụtụ ebe na ngwa eletriki ike, akụrụngwa redio (RF), ihe mmetụta microelectromechanical (MEMS), na ọkụ eletrik dị elu. N'ozuzu, SiCOI wafers na-ejikọta ihe pụrụ iche anụ ahụ nke silicon carbide na uru ikewapụ eletriki nke oyi akwa mkpuchi, na-enye ntọala dị mma maka ọgbọ na-esote ngwaọrụ semiconductor na-arụ ọrụ dị elu.

Ngwa SiCOI wafer

Ngwa eletrọnịkị ike

Igwe ọkụ dị elu na ike dị elu, MOSFETs, na diodes

Rite uru site na bandgap sara mbara nke SiC, voltaji ndakpọ dị elu na nkwụsi ike ọkụ

Mbelata ike na-efunahụ yana nkwalite arụmọrụ na sistemụ ntụgharị ike

Ngwa ugboro redio (RF).

transistor na amplifiers dị elu

Ike parasitic dị ala n'ihi oyi akwa mkpuchi na-akwalite arụmọrụ RF

Kwesịrị ekwesị maka nkwukọrịta 5G na sistemụ radar

Sistemụ Microelectromechanical (MEMS)

Ihe mmetụta na ihe na-eme ihe na-arụ ọrụ na gburugburu ebe ọjọọ

Ike n'igwe na inertness kemịkalụ na-agbatị ndụ ngwaọrụ

Gụnyere ihe mmetụta nrụgide, accelerometers, na gyroscopes

Igwe eletrọnịkị dị elu

Eletrọnịkị maka ụgbọ ala, ikuku ikuku na ngwa ụlọ ọrụ mmepụta ihe

Na-arụ ọrụ ntụkwasị obi na okpomọkụ dị elu ebe silicon dara

Ngwa fotonic

Njikọ na optoelectronic components na insulator substrates

Na-enyere fotonic-chip aka na njikwa okpomọkụ emelitere

Ajụjụ&A nke SiCOI wafer

Ajụjụ:Kedu ihe bụ SiCOI wafer

A:SiCOI wafer na-anọchi anya Silicon Carbide-on-Insulator wafer. Ọ bụ ụdị mkpụrụ akụ semiconductor ebe a na-ejikọ obere silicon carbide (SiC) na oyi akwa mkpuchi, na-abụkarị silicon dioxide (SiO₂) ma ọ bụ mgbe ụfọdụ sapphire. Ihe owuwu a yitere n'echiche nke ọma na Silicon-on-Insulator (SOI) wafers mana ọ na-eji SiC kama silicon.