GaAs dị elu epitaxial wafer substrate gallium arsenide wafer ike laser wavelength 905nm maka ọgwụgwọ ọgwụgwọ laser.

Nkọwa dị mkpirikpi:

Akwụkwọ mpempe akwụkwọ laser nke GaAs na-ezo aka na otu ihe nkiri kristal dị mkpa nke kpụrụ site na teknụzụ uto epitaxial na mkpụrụ gallium arsenide (GaAs), nke a na-eji arụpụta ngwaọrụ optoelectronic dị ka lasers.
GaAs 905 ike lasers na GaAs dị elu epitaxy ibe bụ lasers dabere na gallium arsenide (GaAs) ihe ma na-eji ya n'ọtụtụ ebe. A na-ejikarị MOCVD epitaxial wafer na diode laser dị elu. A na-eji InGaAs quantum nke ọma dị ka oyi akwa na-arụ ọrụ. A na-enyocha wafer epitaxial site na PL, XRD, ECV na ụzọ ule ndị ọzọ. GaAs 905 ike lasers na GaAs dị elu epitaxy chips na-ejikarị eme ihe na ahụike, ụlọ ọrụ mmepụta ihe, nchọpụta sayensị na mpaghara ndị ọzọ n'ihi arụmọrụ dị elu, mmepụta ike dị elu na arụmọrụ ọkụ dị mma, ma nwee uru ahịa dị mkpa na ikike ọrụ aka.

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Isi ihe dị na mpempe akwụkwọ epitaxial laser GaAs gụnyere:

1.High electron mobility: Gallium arsenide nwere elu electron ngagharị, nke na-eme GaAs laser epitaxial wafers nwere ezigbo ngwa na ngwa ngwa ngwa ngwa na ngwa ngwa ngwa ngwa.
2.Direct bandgap mgbanwe luminescence: Dị ka ihe kpọmkwem bandgap ihe onwunwe, gallium arsenide nwere ike rụọ ọrụ nke ọma na-agbanwe ọkụ eletrik na ike ọkụ na optoelectronic ngwaọrụ, na-eme ka ọ dị mma maka mmepụta nke lasers.
3.Wavelength: GaAs 905 lasers na-arụ ọrụ na 905 nm, na-eme ka ha dị mma maka ọtụtụ ngwa, gụnyere biomedicine.
4.High arụmọrụ: na elu fotoelectric mgbanwe arụmọrụ, ọ nwere ike n'ụzọ dị irè tọghata eletriki n'ime laser mmepụta.
5.High ike mmepụta: Ọ nwere ike nweta mmepụta ike dị elu ma dị mma maka ihe ngosi ngwa nke chọrọ ọkụ ọkụ siri ike.
6.Good thermal arụmọrụ: GaAs ihe nwere ezigbo conductivity thermal, na-enyere aka belata arụ ọrụ okpomọkụ nke laser ma melite nkwụsi ike.
7.Wide tunability: Enwere ike imezi ike mmepụta site n'ịgbanwe mbanye ugbu a iji mee mgbanwe dị iche iche chọrọ ngwa.

Ngwa ndị bụ isi nke mbadamba ihe epitaxial laser GaAs gụnyere:

1. Nkwukọrịta eriri anya: GaAs laser epitaxial sheet nwere ike iji rụpụta lasers na nkwurịta okwu fiber optic iji nweta mgbasa ozi ngwa anya dị elu na ogologo oge.

2. Ngwa ụlọ ọrụ: N'ime ụlọ ọrụ mmepụta ihe, GaAs laser epitaxial sheets nwere ike iji mee ihe maka nhazi laser, akara laser na ngwa ndị ọzọ.

3. VCSEL: Vertical cavity surface emitting laser (VCSEL) bụ ihe dị mkpa ubi ngwa nke GaAs laser epitaxial mpempe akwụkwọ, nke a na-ejikarị na ngwa nkwurịta okwu, ngwa anya nchekwa na anya anya.

4. Infrared na ebe ntụpọ: GaAs laser epitaxial sheet nwekwara ike iji mepụta laser infrared, ndị na-emepụta ihe na ngwaọrụ ndị ọzọ, na-arụ ọrụ dị mkpa na nchọpụta infrared, ngosi ọkụ na ubi ndị ọzọ.

Nkwadebe nke akwụkwọ GaAs laser epitaxial na-adabere na teknụzụ uto epitaxial, gụnyere metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxial (MBE) na ụzọ ndị ọzọ. Usoro ndị a nwere ike chịkwaa n'ụzọ ziri ezi nke ọkpụrụkpụ, ihe mejupụtara na nhazi kristal nke oyi akwa epitaxial iji nweta akwụkwọ mpempe akwụkwọ laser GaAs dị elu.

XKH na-enye nhazi nke akwụkwọ GaAs epitaxial n'ụdị dị iche iche na ọkpụrụkpụ, na-ekpuchi ọtụtụ ngwa na nkwukọrịta anya, VCSEL, infrared na ìhè ntụpọ. A na-eji ngwá ọrụ MOCVD dị elu arụpụta ngwaahịa XKH iji hụ na arụmọrụ dị elu na ntụkwasị obi. N'ihe gbasara ngwa agha, XKH nwere ọtụtụ ụzọ isi iyi nke mba ụwa, nke nwere ike ijikwa ọnụ ọgụgụ nke iwu na-agbanwe agbanwe, ma nye ọrụ ndị bara uru dị ka nhazigharị na nkewa. Usoro nnyefe nke ọma na-eme ka nnyefe n'oge ma zute ihe ndị ahịa chọrọ maka ịdị mma na oge nnyefe. Ndị ahịa nwere ike nweta nkwado teknụzụ zuru oke na ọrụ ire ere mgbe ha rutere iji hụ na etinyere ngwaahịa ahụ nke ọma.