Omenala N Ụdị SiC Mkpụrụ Mkpụrụ Dia153/155mm Maka Eletrọnịkị Ike



Ewebata
Mkpụrụ mkpụrụ osisi Silicon Carbide (SiC) na-eje ozi dị ka ihe ntọala maka semiconductor nke ọgbọ nke atọ, nke a na-ahụ anya site na nrụpụta ọkụ ha na-enweghị atụ, ike mgbaka ọkụ eletrik dị elu, na ngagharị elektrọn dị elu. Ngwongwo ndị a na-eme ka ha dị mkpa maka ngwa eletrọnịkị ike, ngwaọrụ RF, ụgbọ ala eletrik (EV) na ngwa ume ọhụrụ. XKH bụ ọkachamara na R&D na mmepụta nke mkpụrụ osisi SiC dị elu, na-eji usoro uto kristal dị elu dị ka ụgbọ njem ikuku anụ ahụ (PVT) na nnukwu ọkụ ọkụ kemịkalụ kemịkalụ (HTCVD) iji hụ na ịdị mma nke ụlọ ọrụ na-eduga.
XKH na-enye 4-inch, 6-inch, na 8-inch SiC mkpụrụ mkpụrụ na ụdị N-ụdị doping nwere ike ịhazi ya, na-enweta ọkwa mgbochi nke 0.01-0.1 Ω·cm na njupụta nke dislocation n'okpuru 500 cm⁻², na-eme ka ha dị mma maka nrụpụta MOSFETs, Schottky Barrier Diodes. Usoro mmepụta anyị kwụkọtara ọnụ na-ekpuchi uto kristal, slicing wafer, polishing, na nyocha, yana ikike imepụta kwa ọnwa karịa wafers 5,000 iji gboo ihe dị iche iche nke ụlọ ọrụ nyocha, ndị na-emepụta semiconductor na ụlọ ọrụ ume ọhụrụ.
Na mgbakwunye, anyị na-enye azịza ahaziri ahazi, gụnyere:
Nhazi nhazi kristal (4H-SiC, 6H-SiC)
Doping pụrụ iche (aluminom, nitrogen, boron, wdg)
Nchacha nke ọma (Ra <0.5 nm)
XKH na-akwado nhazi ihe nlere dabere na nlere anya, ndụmọdụ teknụzụ, na obere ihe nleba anya iji wepụta ngwọta mkpụrụ osisi SiC kachasị mma.
Usoro nka
Silicon carbide mkpụrụ wafer | |
Ụdị Poly | 4H |
Njehie nhazi ihu elu | 4° chere ihu <11-20>±0.5º |
Nguzogide | nhazi |
Dayameta | 205 ± 0.5mm |
Ọkpụrụkpụ | 600± 50μm |
Isi ike | CMP, Ra≤0.2nm |
Njupụta Micropipe | ≤1 ea/cm2 |
Ọkpụkpụ | ≤5, ngụkọta ogologo≤2* dayameta |
Iberibe ibe/indents | Ọ dịghị |
Akara laser n'ihu | Ọ dịghị |
Ọkpụkpụ | ≤2, ngụkọta ogologo≤ Dayameta |
Iberibe ibe/indents | Ọ dịghị |
Mpaghara polytype | Ọ dịghị |
Akara laser azụ | 1mm (site na n'elu elu) |
Ọnụ | Chamfer |
Nkwakọ ngwaahịa | Multi-wafer cassette |
Ngwakọta mkpụrụ SiC - Njirimara isi
1. Njirimara Anụ ahụ Pụrụ Iche
· High thermal conductivity (~ 490 W / m·K), nke ukwuu karịrị silicon (Si) na gallium arsenide (GaAs), na-eme ka ọ dị mma maka ikpo ọkụ ngwaọrụ dị elu.
· Ike nbibi (~ 3 MV / cm), na-eme ka arụ ọrụ kwụsiri ike n'okpuru ọnọdụ voltaji dị elu, dị oke mkpa maka ndị na-atụgharị EV na modul ike mmepụta ihe.
Bandgap sara mbara (3.2 eV), na-ebelata mmiri iyi na oke okpomọkụ yana ịkwalite ntụkwasị obi ngwaọrụ.
2. Ogo kristal dị elu
Teknụzụ uto ngwakọ PVT + HTCVD na-ebelata ntụpọ micropipe, na-edobe njupụta nbipu n'okpuru 500 cm⁻².
Wafer ụta/warp <10 μm na elu roughness Ra <0.5 nm, na-eme ka ndakọrịta na lithography dị elu na usoro ntinye ihe nkiri dị mkpa.
3. Nhọrọ Doping dị iche iche
Ụdị N (Nitrogen-doped): Nguzogide dị ala (0.01-0.02 Ω·cm), kachasị maka ngwaọrụ RF dị elu.
· P-ụdị (Aluminum-doped): Kwesịrị ekwesị maka ike MOSFET na IGBT, na-eme ka ndị na-ebu ụgbọ elu dịkwuo mma.
SiC Semi-insulating (Vanadium-doped): Resistivity> 10⁵ Ω·cm, ahaziri maka modul n'ihu 5G RF.
4. Environmental kwụsie ike
· Nguzogide okpomọkụ dị elu (> 1600 ° C) na ike radieshon, dabara maka ikuku ikuku, akụrụngwa nuklia na gburugburu ebe ndị ọzọ dị oke egwu.
Ngwa mkpụrụ SiC - Ngwa nke izizi
1. Igwe ọkụ eletrik
Ụgbọ ala eletriki (EV): A na-eji chaja na bọọdụ (OBC) na ndị inverters na-emeziwanye arụmọrụ ma belata mkpa njikwa okpomọkụ.
Sistemụ Ike nrụpụta ọrụ: Na-eme ka ndị na-atụgharị fotovoltaic na grids smart, na-enweta> 99% nrụpụta ike ntụgharị.
2. Ngwaọrụ RF
· 5G Base Stations: Semi-insulating SiC substrates na-enyere GaN-on-SiC RF ike amplifiers, na-akwado mgbasa ozi dị elu, ike dị elu.
Nkwukọrịta Satellite: Àgwà ndị dị ala na-efu na-eme ka ọ dị mma maka ngwaọrụ ebili mmiri millimeter.
3. Nchekwa ume ọhụrụ & Ike
· Ike anyanwụ: SiC MOSFETs na-akwalite arụmọrụ ntụgharị DC-AC ka ọ na-ebelata ụgwọ ọrụ.
Sistemụ Nchekwa Ike (ESS): Na-ebuli ndị ntụgharị bidirectional ma gbasaa ogologo ndụ batrị.
4. Nchekwa & Aerospace
Sistemụ Radar: A na-eji ngwaọrụ SiC dị elu na radar AESA (Active Electronically Scanned Array).
· Njikwa ike ụgbọ elu: Ngwa SiC na-eguzogide radieshon dị oke egwu maka ọrụ omimi oghere.
5. Nnyocha & Teknụzụ na-apụta
Ịgbakọ Quantum: SiC dị ọcha na-enyere aka nyocha nyocha qubit.
· Ihe mmetụta okpomọkụ dị elu: A na-etinye ya na nyocha mmanụ na nlekota ngwa ngwa nuklia.
Mkpụrụ mkpụrụ SiC - Ọrụ XKH
1. Ịnweta Chain Uru
· Nrụpụta n'ụzọ kwụ ọtọ: njikwa zuru oke site na ntụ ntụ SiC dị ọcha ruo na wafers, na-eme ka oge ndu nke izu 4-6 maka ngwaahịa ọkọlọtọ.
Ịsọ asọmpi ọnụ: Akụ na ụba nke ọnụ ọgụgụ na-enyere 15-20% ọnụ ahịa dị ala karịa ndị asọmpi, na nkwado maka nkwekọrịta ogologo oge (LTAs).
2. Ọrụ nhazi
· Nhazi kristal: 4H-SiC (ọkọlọtọ) ma ọ bụ 6H-SiC (ngwa ndị pụrụ iche).
· Nkwalite nke doping: N-ụdị N-ụdị/P-ụdị/ihe mkpuchi nke ọkara.
polishing dị elu: CMP polishing na epi-njikere elu ọgwụgwọ (Ra <0.3 nm).
3. Nkwado nka na ụzụ
Nnwale nlele efu: Gụnyere XRD, AFM na akụkọ nha mmetụta Ụlọ Nzukọ.
Enyemaka ịme anwansị ngwaọrụ: Na-akwado uto epitaxial na njikarịcha imewe ngwaọrụ.
4. Nzaghachi ngwa ngwa
· Prototyping dị ala: usoro kacha nta nke wafer 10, ewepụtara n'ime izu atọ.
· Ngwa ngwa zuru ụwa ọnụ: Mmekọrịta ya na DHL na FedEx maka nnyefe site n'ọnụ ụzọ ruo n'ọnụ ụzọ.
5. Nkwenye mma
· Nyochaa usoro zuru oke: Ekpuchi topography X-ray (XRT) yana nyocha njupụta ntụpọ.
· Asambodo mba ụwa: Dabara na IATF 16949 (ọkwa ụgbọ ala) na ụkpụrụ AEC-Q101.
Mmechi
Mkpụrụ mkpụrụ SiC nke XKH na-eme nke ọma n'ịdị mma kristal, nkwụsi ike n'usoro ọkọnọ, na mgbanwe nhazi, na-eje ozi elektrọnik ike, nkwukọrịta 5G, ike mmeghari ohuru na teknụzụ nchekwa. Anyị na-aga n'ihu n'ihu 8-inch SiC mass-production technology iji kwalite ụlọ ọrụ semiconductor ọgbọ nke atọ gaa n'ihu.