8inch SiC Production ọkwa wafer 4H-N SiC mkpụrụ

Nkọwa dị mkpirikpi:

A na-eji 8-inch SiC substrates na ngwaọrụ eletrọnịkị dị elu, dị ka MOSFET ike (Metal Oxide Semiconductor Field Effect Transistor), Schottky diodes na ngwaọrụ semiconductor ike ndị ọzọ.

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Tebụl na-esonụ na-egosi nkọwapụta nke 8inch SiC wafers:

8inch N-ụdị SiC DSP Species
Nọmba	Ihe	Nkeji	Mmepụta	Nyocha	Dummy
1:paramita
1.1	polytype	--	4H	4H	4H
1.2	nghazi elu	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2: Igwe ọkụ eletrik
2.1	dopant	--	n-ụdị Nitrogen	n-ụdị Nitrogen	n-ụdị Nitrogen
2.2	resistivity	ohm · cm	0.015-0.025	0.01-0.03	NA
3: Mechanical paramita
3.1	dayameta	mm	200±0.2	200±0.2	200±0.2
3.2	ọkpụrụkpụ	μm	500± 25	500± 25	500± 25
3.3	Ntuzi aka notch	°	[1-100]±5	[1-100]±5	[1-100]±5
3.4	Omimi Ọkwa	mm	1-1.5	1-1.5	1-1.5
3.5	LTV	μm	≤5 (10mm*10mm)	≤5 (10mm*10mm)	≤10 (10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Ụta	μm	-25-25	-45-45	-65-65
3.8	Warp	μm	≤30	≤50	≤70
3.9	AFM	nm	≤0.2	≤0.2	≤0.2
4:Ihe owuwu
4.1	njupụta micropipe	ihe / cm2	≤2	≤10	≤50
4.2	ígwè ọdịnaya	atom / cm2	≤1E11	≤1E11	NA
4.3	TSD	ihe / cm2	≤500	≤1000	NA
4.4	BPD	ihe / cm2	≤2000	≤5000	NA
4.5	TED	ihe / cm2	≤7000	≤10000	NA
5.Front àgwà
5.1	n'ihu	--	Si	Si	Si
5.2	elu imecha	--	Si-ihu CMP	Si-ihu CMP	Si-ihu CMP
5.3	urughuru	ea/wafer	≤100 (nha≥0.3μm)	NA	NA
5.4	ọkọ	ea/wafer	≤5, ngụkọta ogologo≤200mm	NA	NA
5.5	Ọnụ ibe / indents / mgbawa / ntụpọ / mmetọ	--	Ọ dịghị	Ọ dịghị	NA
5.6	Mpaghara polytype	--	Ọ dịghị	Mpaghara ≤10%	Mpaghara ≤30%
5.7	akara n'ihu	--	Ọ dịghị	Ọ dịghị	Ọ dịghị
6:Ala azụ
6.1	azụ imecha	--	C-ihu MP	C-ihu MP	C-ihu MP
6.2	ọkọ	mm	NA	NA	NA
6.3	Akụkụ ntụpọ azụ ibe / indents	--	Ọ dịghị	Ọ dịghị	NA
6.4	Azụ isi ike	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Akara azụ	--	Ọkwa	Ọkwa	Ọkwa
7: onu
7.1	onu	--	Chamfer	Chamfer	Chamfer
8: ngwugwu
8.1	nkwakọ ngwaahịa	--	Epi-njikere na agụụ nkwakọ ngwaahịa	Epi-njikere na agụụ nkwakọ ngwaahịa	Epi-njikere na agụụ nkwakọ ngwaahịa
8.2	nkwakọ ngwaahịa	--	Multi-wafer ngwugwu cassette	Multi-wafer ngwugwu cassette	Multi-wafer ngwugwu cassette