6inch HPSI SiC mkpụrụ wafer Silicon Carbide Semi-akparị SiC wafers

6inch HPSI SiC mkpụrụ wafer Silicon Carbide Semi na-akparị SiC wafers egosipụtara

Nkọwa dị mkpirikpi:

Otu kristal SiC wafer dị elu (Silicon Carbide sitere na SICC) gaa na ụlọ ọrụ eletrọnịkị na optoelectronic. 3inch SiC wafer bụ ihe na-esote ọgbọ semiconductor, ihe mkpuchi silicon-carbide wafers nke dayameta 3-inch. Ezubere wafers maka imepụta ike, RF na ngwaọrụ optoelectronics.

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Teknụzụ uto PVT Silicon Carbide Crystal SiC

Ụzọ uto dị ugbu a maka SiC otu kristal gụnyere atọ ndị a: usoro mmiri mmiri, usoro ntinye mmiri kemịkalụ dị elu, na usoro njem ụgbọ mmiri anụ ahụ (PVT). N'ime ha, usoro PVT bụ teknụzụ kachasị nyocha na tozuru oke maka uto kristal SiC, yana ihe isi ike ya bụ:

(1) SiC otu kristal na okpomọkụ dị elu nke 2300 Celsius C n'elu ụlọ graphite mechiri emechi iji mezue usoro ntọghata " siri ike - gas - siri ike ", usoro ntughari na-eto eto dị ogologo, siri ike ịchịkwa, na-adịkarị mfe microtubules, inclusions na ntụpọ ndị ọzọ.

(2) Silicon carbide otu kristal, gụnyere ihe karịrị 200 ụdị kristal dị iche iche, ma mmepụta nke izugbe naanị otu ụdị kristal, dị mfe imepụta ụdị mgbanwe kristal na usoro uto nke na-ebute ntụpọ ụdị inclusions dị iche iche, usoro nkwadebe nke otu. Ụdị kristal kpọmkwem na-esiri ike ịchịkwa nkwụsi ike nke usoro ahụ, dịka ọmụmaatụ, isi ihe dị ugbu a nke ụdị 4H.

(3) Silicon carbide otu kristal uto thermal ubi enwere gradient okpomọkụ, nke na-ebute usoro uto kristal enwere nrụgide dị n'ime obodo na mgbakasị ahụ, mmejọ na ntụpọ ndị ọzọ kpatara.

(4) Silicon carbide otu kristal uto usoro kwesịrị ijidesi ike iwebata nke mpụga adịghị ọcha, iji nweta a dị oke ọcha ọkara mkpuchi kristal ma ọ bụ directionally doped conductive crystal. Maka ihe ndị nwere obere silicon carbide substrates ejiri na ngwaọrụ RF, a ga-enweta akụrụngwa eletriki site na ijikwa oke adịghị ọcha yana ụdị ntụpọ ntụpọ dị na kristal.