6inch HPSI SiC mkpụrụ wafer Silicon Carbide Semi-akparị SiC wafers
Teknụzụ uto PVT Silicon Carbide Crystal SiC
Ụzọ uto dị ugbu a maka SiC otu kristal gụnyere atọ ndị a: usoro mmiri mmiri, usoro ntinye mmiri kemịkalụ dị elu, na usoro njem ụgbọ mmiri anụ ahụ (PVT). N'ime ha, usoro PVT bụ teknụzụ kachasị nyocha na tozuru oke maka uto kristal SiC, yana ihe isi ike ya bụ:
(1) SiC otu kristal na elu okpomọkụ nke 2300 Celsius C n'elu mechiri emechi graphite ụlọ imecha " siri ike - gas - siri ike" mgbanwe recrystallisation usoro, uto okirikiri dị ogologo, siri ike ịchịkwa, na-adịkarị mfe microtubules, inclusions na ndị ọzọ ntụpọ.
(2) Silicon carbide otu kristal, gụnyere ihe karịrị 200 ụdị kristal dị iche iche, ma mmepụta nke izugbe naanị otu ụdị kristal, dị mfe na-emepụta kristal ụdị mgbanwe na uto usoro n'ihi na multi-ụdị inclusions ntụpọ, na nkwadebe usoro nke otu kpọmkwem crystal ụdị siri ike ịchịkwa nkwụsi ike nke usoro, dị ka ihe atụ, ugbu a mainstream nke 4H-ụdị.
(3) Silicon carbide otu kristal uto thermal ubi enwere gradient okpomọkụ, nke na-ebute usoro uto kristal enwere nrụgide dị n'ime obodo na mgbakasị ahụ, mmejọ na ntụpọ ndị ọzọ kpatara.
(4) Silicon carbide otu kristal uto usoro kwesịrị ijidesi ike iwebata nke mpụga adịghị ọcha, iji nweta a dị oke ọcha ọkara mkpuchi kristal ma ọ bụ directionally doped conductive crystal. Maka ihe ndị nwere obere silicon carbide substrates ejiri na ngwaọrụ RF, a ga-enweta akụrụngwa eletriki site na ijikwa oke adịghị ọcha yana ụdị ntụpọ ntụpọ dị na kristal.
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