6 inch nke nwere otu kristal SiC nke na-eduzi ihe mejupụtara polycrystalline SiC Dayameta 150mm Ụdị P nke ụdị N
Teknụzụ paramita
| Nha: | 6 inch |
| Dayameta: | 150 mm |
| Ọkpụrụkpụ: | 400-500 μm |
| Paramita Ihe Nkiri SiC nke Monocrystalline | |
| Ụdị polytype: | 4H-SiC ma ọ bụ 6H-SiC |
| Ntinye uche nke Doping: | 1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³ |
| Ọkpụrụkpụ: | 5-20 μm |
| Nguzogide Mpempe akwụkwọ: | 10-1000 Ω/sq |
| Njem Elektrọn: | 800-1200 cm²/V |
| Njem Oghere: | 100-300 cm²/V |
| Polycrystalline SiC Buffer Layer Paramita | |
| Ọkpụrụkpụ: | 50-300 μm |
| Ọgbakọ okpomọkụ: | 150-300 W/m·K |
| Paramita Substrate nke Monocrystalline SiC | |
| Ụdị polytype: | 4H-SiC ma ọ bụ 6H-SiC |
| Ntinye uche nke Doping: | 1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³ |
| Ọkpụrụkpụ: | 300-500 μm |
| Nha ọka: | > 1 mm |
| Ọdịdị Elu: | < 0.3 mm RMS |
| Njirimara Mekaniki na Ọkụ Eletriki | |
| Ike: | 9-10 Mohs |
| Ike Mkpakọ: | 3-4 GPA |
| Ike ọdụdọ: | 0.3-0.5 GPA |
| Ike nke Ubi Mgbasa: | > 2 MV/cm |
| Ngụkọta oke ndidi: | > 10 Maazị |
| Nguzogide Mmetụta Ihe Omume Otu: | > 100 MeV·cm²/mg |
| Ọgbakọ okpomọkụ: | 150-380 W/m·K |
| Oke okpomọkụ ọrụ: | -55 ruo 600°C |
Njirimara Ndị Dị Mkpa
SiC monocrystalline nke dị sentimita isii na-eduzi ihe mejupụtara SiC nke nwere polycrystalline na-enye nguzozi pụrụ iche nke nhazi ihe na arụmọrụ, na-eme ka ọ dabara adaba maka gburugburu ụlọ ọrụ mmepụta ihe siri ike:
1.Ọdịmma Ọnụ Ahịa: Isi polycrystalline SiC na-ebelata ọnụ ahịa nke ukwuu ma e jiri ya tụnyere SiC monocrystalline zuru oke, ebe oyi akwa monocrystalline SiC na-arụ ọrụ na-eme ka arụmọrụ dị mma maka ngwaọrụ, nke dị mma maka ngwa ndị na-emetụta ọnụ ahịa.
2. Njirimara Eletriki Pụrụ Iche: Oyi akwa SiC monocrystalline na-egosipụta ngagharị dị elu (>500 cm²/V·s) na njupụta ntụpọ dị ala, na-akwado ọrụ ngwaọrụ ugboro ugboro na ike dị elu.
3. Nkwụsi Ike Okpomọkụ Dị Elu: Nguzogide okpomọkụ dị elu nke SiC (> 600°C) na-eme ka ihe mejupụtara ya nọgide na-adị ike n'okpuru ọnọdụ dị oke njọ, na-eme ka ọ dabara adaba maka ụgbọ ala eletrik na ngwa moto ụlọ ọrụ mmepụta ihe.
Nha Wafer nke dị sentimita 4.6: Ma e jiri ya tụnyere ihe ndị e ji SiC nke dị sentimita 4 mee, usoro nke dị sentimita 6 na-eme ka mkpụrụ chip mụbaa ihe karịrị pasent 30, na-ebelata ọnụ ahịa ngwaọrụ kwa nkeji.
5. Nhazi Nhazi: Ụdị N ma ọ bụ ụdị P nke e tinyere tupu oge eruo na-ebelata usoro ntinye ion na mmepụta ngwaọrụ, na-eme ka arụmọrụ mmepụta na mmepụta dịkwuo mma.
6. Njikwa Okpomọkụ Kachasị Elu: Nhazi okpomọkụ nke ntọala polycrystalline SiC (~120 W/m·K) na-abịaru nso na nke monocrystalline SiC, na-edozi nsogbu nke mwepụ okpomọkụ na ngwaọrụ ike dị elu nke ọma.
Àgwà ndị a na-etinye SiC monocrystalline nke dị sentimita isii n'elu ihe mejupụtara SiC polycrystalline dị ka ngwọta asọmpi maka ụlọ ọrụ dịka ike mmeghari ohuru, njem ụgbọ okporo ígwè, na ikuku.
Ngwa Ndị Isi
A na-etinye SiC monocrystalline nke dị sentimita isii n'ime ihe mejupụtara polycrystalline SiC nke ọma n'ọtụtụ ubi a na-achọsi ike:
1. Ike ụgbọ ala eletriki: A na-eji ya na MosfET na diodes SiC voltaji dị elu iji melite arụmọrụ inverter ma gbasaa oke batrị (dịka ọmụmaatụ, ụdị Tesla, BYD).
2. Nduzi Moto Ụlọ Ọrụ: Na-eme ka modulu ike dị elu, nke na-agbanwe ugboro ugboro, na-ebelata oriri ike na igwe dị arọ na turbines ikuku.
3. Igwe Inverters Photovoltaic: Ngwaọrụ SiC na-eme ka arụmọrụ mgbanwe anyanwụ ka mma (>99%), ebe ihe mejupụtara ya na-ebelatakwa ọnụ ahịa sistemụ.
4. Ụgbọ okporo ígwè: A na-etinye ya na ihe ntụgharị traction maka sistemụ ụgbọ okporo ígwè na ụgbọ okporo ígwè dị elu, na-enye ike iguzogide voltaji dị elu (> 1700V) na ihe ndị dị obere.
5. Oghere: Ọ dị mma maka sistemụ ike satịlaịtị na sekit njikwa injin ụgbọelu, nke nwere ike iguzogide oke okpomọkụ na radieshon.
N'ọrụ mmepụta ihe bara uru, SiC monocrystalline nke dị sentimita isii nke na-eduzi ihe na polycrystalline SiC composite substrate dakọtara nke ọma na usoro ngwaọrụ SiC ọkọlọtọ (dịka ọmụmaatụ, lithography, etching), nke na-achọghị itinye ego ọzọ na isi obodo.
Ọrụ XKH
XKH na-enye nkwado zuru oke maka SiC monocrystalline nke dị sentimita isii na polycrystalline SiC composite substrate, na-ekpuchi R&D ruo mmepụta oke:
1. Nhazi: Okpukpu oyi akwa monocrystalline a na-agbanwe agbanwe (5–100 μm), ntinye ọgwụ (1e15–1e19 cm⁻³), na nhazi kristal (4H/6H-SiC) iji mezuo ihe dị iche iche achọrọ maka ngwaọrụ.
2. Nhazi Wafer: Nnweta nke substrates dị sentimita isii n'obosara yana ọrụ ịcha azụ na ọrụ metalization maka njikọta plug-and-play.
3.Nkwenye teknụzụ: Gụnyere nyocha kristal XRD, nnwale mmetụta Hall, na nha iguzogide okpomọkụ iji mee ka asambodo ihe dị ngwa ngwa.
4. Nhazi ngwa ngwa: Ihe nlele nke dị sentimita 2 ruo 4 (otu usoro ahụ) maka ụlọ ọrụ nyocha iji mee ka usoro mmepe dị ngwa.
5. Nyocha na Nhazi Mmebi: Ngwọta ọkwa ihe maka ihe ịma aka nhazi (dịka ọmụmaatụ, ntụpọ oyi akwa epitaxial).
Ọrụ anyị bụ ịmepụta SiC monocrystalline nke dị sentimita isii n'elu ihe mejupụtara SiC polycrystalline dị ka ihe ngwọta kachasị mma maka ngwa eletrọniki ike SiC, na-enye nkwado site na nhazi prototyping ruo na mmepụta olu.
Mmechi
SiC monocrystalline nke dị sentimita isii n'elu ihe mejupụtara SiC nke polycrystalline na-enweta nguzozi dị elu n'etiti arụmọrụ na ọnụ ahịa site na nhazi ngwakọ mono/polycrystalline ọhụrụ ya. Ka ụgbọ ala eletrik na-amụba ma na-aga n'ihu na Industry 4.0, ihe a na-enye ntọala ihe eji arụ ọrụ a pụrụ ịdabere na ya maka ngwa eletrọniki ike ọgbọ na-abịa. XKH na-anabata mmekorita iji nyochaa ike nke teknụzụ SiC.








