4inch SiC Epi wafer maka MOS ma ọ bụ SBD
Epitaxy na-ezo aka na uto nke oyi akwa nke otu ihe kristal dị elu n'elu mkpụrụ osisi silicon carbide. N'ime ha, uto nke gallium nitride epitaxial oyi akwa na obere mkpuchi silicon carbide mkpụrụ a na-akpọ heterogeneous epitaxy; A na-akpọ uto nke silicon carbide epitaxial oyi akwa n'elu ihe na-eduzi mkpụrụ akụ silicon carbide a na-akpọ epitaxy homogenous.
Epitaxial dị n'usoro ihe eji eme ihe chọrọ maka uto nke oyi akwa na-arụ ọrụ, na-ekpebikarị arụmọrụ nke mgbawa na ngwaọrụ ahụ, ọnụ ahịa nke 23%. Ụzọ bụ isi nke SiC thin film epitaxy n'oge a gụnyere: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), mmiri mmiri epitaxy (LPE), na pulsed laser deposition and sublimation (PLD).
Epitaxy bụ njikọ dị oke egwu na ụlọ ọrụ niile. Site na-eto eto GaN epitaxial layers na obere ihe mkpuchi silicon carbide, a na-emepụta GaN epitaxial wafers dabere na silicon carbide, nke enwere ike ịmekwu n'ime ngwaọrụ GaN RF dị ka transistors elektrọn dị elu (HEMTs);
Site na-eto eto silicon carbide epitaxial oyi akwa na conductive mkpụrụ iji nweta silicon carbide epitaxial wafer, na na epitaxial oyi akwa na imewe nke Schottky diodes, gold-oxygen ọkara ubi mmetụta transistors, mkpuchi ọnụ ụzọ ámá bipolar transistors na ndị ọzọ ike ngwaọrụ, otú àgwà nke epitaxial na arụmọrụ nke ngwaọrụ dị oke mmetụta na mmepe nke ụlọ ọrụ na-arụkwa ọrụ dị oke egwu.