Wafer SiC Epi nke dị sentimita 4 maka MOS ma ọ bụ SBD

Epitaxy na-ezo aka na uto nke oyi akwa nke ihe kristal dị elu karịa n'elu ihe mkpuchi silicon carbide. N'ime ha, uto nke gallium nitride epitaxial oyi akwa na ihe mkpuchi silicon carbide semi-insulating a na-akpọ heterogeneous epitaxy; uto nke oyi akwa silicon carbide epitaxial n'elu ihe mkpuchi silicon carbide conductive a na-akpọ homogeneous epitaxy.

Epitaxial kwekọrọ na ihe achọrọ maka imepụta ngwaọrụ maka uto nke isi ihe eji arụ ọrụ, na-ekpebikarị arụmọrụ nke mgbawa na ngwaọrụ ahụ, ọnụ ahịa ya bụ 23%. Ụzọ ndị bụ isi nke SiC thin film epitaxy n'oge a gụnyere: kemịkalụ vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), na pulsed laser deposition and sublimation (PLD).

Epitaxy bụ njikọ dị oke mkpa n'ime ụlọ ọrụ niile. Site n'ịkọpụta oyi akwa epitaxial GaN na ihe ndị na-egbochi silicon carbide, a na-emepụta wafer epitaxial GaN dabere na silicon carbide, nke enwere ike ime ka ọ bụrụ ngwaọrụ GaN RF dị ka transistors electron mobility high (HEMTs);

Site n'ịkọpụta oyi akwa silicon carbide epitaxial na substrate conductive iji nweta silicon carbide epitaxial wafer, na na epitaxial oyi akwa na mmepụta nke Schottky diodes, gold-oxygen ọkara-field effect transistors, insulated gate bipolar transistors na ngwaọrụ ike ndị ọzọ, yabụ àgwà nke epitaxial na arụmọrụ nke ngwaọrụ ahụ nwere nnukwu mmetụta na mmepe nke ụlọ ọrụ ahụ na-arụkwa ọrụ dị oke mkpa.