4inch 6inch 8inch SiC Crystal Growth Furnace maka Usoro CVD

Nkọwa dị mkpirikpi:

XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition Sistemu na-eji teknụzụ ikuku ikuku kemịkalụ na-eduga ụwa, emebere ya maka uto kristal SiC dị elu. Site na njikwa ziri ezi nke usoro usoro gụnyere mgbaba gas, okpomọkụ na nrụgide, ọ na-eme ka uto kristal SiC na-achịkwa na 4-8 inch substrates. Usoro CVD a nwere ike ịmepụta ụdị kristal SiC dị iche iche gụnyere ụdị 4H / 6H-N na ụdị mkpuchi 4H / 6H-SEMI, na-enye ngwọta zuru oke site na ngwa na usoro. Sistemu ahụ na-akwado ihe uto chọrọ maka wafers 2-12 inch, na-eme ka ọ dabara adaba maka nrụpụta oke elektrọnik na ngwaọrụ RF.

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Atụmatụ

Ụkpụrụ ọrụ

Ụkpụrụ bụ isi nke usoro CVD anyị gụnyere mgbaka okpomọkụ nke silicon-nwere (dịka, SiH4) na carbon-nwere (dịka, C3H8) gases na-ebu ụzọ na okpomọkụ dị elu (nke 1500-2000 Celsius C), na-etinye SiC otu kristal na mkpụrụ site na mmeghachi omume kemịkalụ gas. Teknụzụ a dabara adaba maka imepụta ịdị ọcha dị elu (> 99.9995%) 4H / 6H-SiC otu kristal nwere njupụta ntụpọ dị ala (<1000/cm²), na-ezute ihe ndị siri ike chọrọ maka ngwa elektrọn ike na ngwaọrụ RF. Site na njikwa ziri ezi nke ihe mejupụtara gas, ọnụego na-asọpụta na gradient okpomọkụ, usoro ahụ na-enyere aka ịhazi ụkpụrụ ziri ezi nke ụdị conductivity kristal (ụdị N / P) na mgbochi.

Ụdị Sistemu na Nka nka

Ụdị Sistemu	Oke okpomọkụ	Atụmatụ igodo	Ngwa
CVD dị elu	1500-2300C	Igwe ọkụ induction graphite, ±5°C otu okpomọkụ	Nnukwu SiC kristal uto
Hot-Filament CVD	800-1400°C	Tungsten filament kpo oku, 10-50μm / h ọnụego nkwụnye ego	SiC oké epitaxy
VPE CVD	1200-1800C	Multi-mpaghara okpomọkụ akara,>80% gas itinye n'ọrụ	Mmepụta epi-wafer uka
PECVD	400-800C	Plasma emelitere, ọnụego nkwụnye ego 1-10μm / h	Ihe nkiri SiC dị obere obere

Njirimara teknụzụ isi

1. Advanced okpomọkụ Control System
Igwe ọkụ ahụ nwere sistemu ikpo ọkụ na-eguzogide ọtụtụ mpaghara nwere ike idowe okpomọkụ ruo 2300C yana otu ± 1°C n'ofe ụlọ niile na-eto eto. A na-enweta njikwa ọkụ nke ọma site na:
Mpaghara kpo oku 12 na-achịkwa onwe ya.
Nlebanya thermocouple ejighi ya (ụdị C W-Re).
Real-oge thermal profile mmezi algọridim.
Mgbidi ụlọ nke mmiri jụrụ oyi maka njikwa gradient thermal.

2. Nnyefe gas na teknụzụ ngwakọta
Sistemụ nkesa gas nke anyị nwere na-eme ka agwakọta precursor kacha mma yana nnyefe otu:
Ndị na-ahụ maka ịgbasa uka nwere izi ezi ± 0.05sccm.
Multi-point gas injection ọtụtụ.
Nlebanya ihe mejupụtara gas dị n'ime ọnọdụ (FTIR spectroscopy).
Nkwụghachi ụgwọ na-erugharị akpaka n'oge okirikiri uto.

3. Nkwalite ogo kristal
Usoro a na-etinye ọtụtụ ihe ọhụrụ iji melite ogo kristal:
Ihe njide mkpụrụ na-atụgharị (0-100rpm nwere ike ime).
Teknụzụ njikwa oke oke oke.
Usoro nleba anya ntụpọ n'ime ebe (UV laser agbasasị).
Nkwụghachi ụgwọ nrụgide akpaaka n'oge uto.

4. Usoro akpaaka na njikwa
N'ụzọ zuru ezu akpaghị aka usoro ogbugbu.
Nkwalite oke uto ozugbo AI.
Nleba anya na nyocha nyocha.
Ihe ndekọ data paramita 1000+ (echekwara maka afọ 5).

5. Nchekwa na ntụkwasị obi atụmatụ
Nchekwa okpomọkụ karịrị okpukpu atọ.
Sistemụ mkpochapụ ihe mberede akpaaka.
Nhazi nhazi ọkwa seismic.
98.5% nkwa oge oge.

6. Scalable Architecture
Nhazi modular na-enye ohere nkwalite ikike.
Dakọtara na nha wafer 100mm ruo 200mm.
Na-akwado nhazi nke kwụ ọtọ na nke kwụ ọtọ.
Ngwa mgbanwe ngwa ngwa maka mmezi.

7. Ike arụmọrụ
30% oriri ike dị ala karịa sistemụ ndị yiri ya.
Usoro mgbake ọkụ na-ejide 60% nke ikpo ọkụ.
Algọridim usoro oriri gas kachasị mma.
Achọrọ akụrụngwa LEED.

8. Ihe dị iche iche
Na-eto ụdị ụdị SiC niile (4H, 6H, 3C).
Na-akwado ma conductive na ọkara mkpuchi variants.
Na-anabata atụmatụ doping dị iche iche (ụdị N-ụdị, ụdị P).
Dakọtara na ihe mbido ọzọ (dịka TMS, TES).

9. Vacuum System Performance
Nrụgide ntọala: <1×10⁻ Torr
Ọnụ ego nkwụsị: <1×10⁻ Torr·L/sekọnd
Ọsọ mgbapụta: 5000L / s (maka SiH₄)

Njikwa nrụgide akpaaka n'oge okirikiri uto
Nkọwapụta nka nka zuru oke na-egosiputa ikike sistemu anyị imepụta kristal SiC nke nyocha-ọkwa na mmepụta nke nwere nguzosi ike nke ụlọ ọrụ na-eduga. Nchikota njikwa nkenke, nleba anya dị elu, na injinia siri ike na-eme ka usoro CVD a bụrụ nhọrọ kacha mma maka ma R&D na ngwa nrụpụta olu na ngwa eletrọnịkị ike, ngwaọrụ RF, yana ngwa semiconductor ndị ọzọ dị elu.

Uru ndị bụ isi

1. Ọganihu Crystal dị elu
• Njupụta dị obere ka <1000/cm² (4H-SiC)
• Ịdị n'otu doping <5% (wafer 6-inch)
• Crystal dị ọcha> 99.9995%

2. Ikike mmepụta nke nnukwu
• Na-akwado uto wafer ruo 8-inch
• Ịdị n'otu dayameta>99%
• Ọdịiche nke ịdị arọ <± 2%

3. Usoro njikwa ziri ezi
• izi ezi njikwa okpomọkụ ±1°C
• Izi ezi njikwa ikuku gas ± 0.1sccm
• izi ezi njikwa nrụgide ±0.1Torr

4. Ike arụmọrụ
• 30% na-arụ ọrụ ike karịa usoro ndị a na-emekarị
• Ọnụego uto ruru 50-200μm / h
• Oge ngwa ngwa> 95%

Ngwa igodo

1. Ngwa eletrọnịkị ike
Ihe ntinye 6-inch 4H-SiC maka 1200V+ MOSFETs/diodes, na-ebelata ngbanwe mgbanwe site na 50%.

2. 5G nkwukọrịta
Mgbochi SiC na-ekpuchi ọkara (resistivity> 10⁸Ω·cm) maka ọdụ ọdụ PA, yana mfu ntinye <0.3dB na> 10GHz.

3. Ụgbọ ala ume ọhụrụ
Modul SiC-ọkwa ụgbọ ala na-agbatị oke EV site na 5-8% wee belata oge nchaji site na 30%.

4. Ndị ntụgharị PV
Ihe ndị na-enweghị ntụpọ na-akwalite nrụpụta ntụgharị karịa 99% ma na-ebelata nha sistemụ site na 40%.

Ọrụ XKH

1. Ọrụ nhazi
Sistemụ CVD 4-8 inch ahaziri.
Na-akwado uto nke ụdị 4H / 6H-N, ụdị mkpuchi 4H / 6H-SEMI, wdg.

2. Nkwado nka na ụzụ
Ọzụzụ zuru oke maka ịrụ ọrụ na njikarịcha usoro.
24/7 nzaghachi teknụzụ.

3. Ngwọta Turnkey
Ọrụ ngwụcha ruo ọgwụgwụ site na nrụnye ruo na nhazi nkwado.

4. Ngwongwo ihe
2-12 inch SiC substrates/epi-wafers dị.
Na-akwado 4H/6H/3C polytypes.

Isi ihe dị iche gụnyere:
Ruo 8 inch nke uto kristal ike.
20% ngwa ngwa uto ọnụego karịa nkezi ụlọ ọrụ.
98% ntụkwasị obi sistemụ.
Ngwungwu sistemụ njikwa ọgụgụ isi zuru oke.