2inch 3inch 4inch InP epitaxial wafer substrate APD light detector maka fiber optic nkwukọrịta ma ọ bụ LiDAR

2inch 3inch 4inch InP epitaxial wafer substrate APD ihe nchọpụta ọkụ maka nkwukọrịta fiber optic ma ọ bụ onyonyo egosipụtara LiDAR

Nkọwa dị mkpirikpi:

InP epitaxial substrate bụ ihe ndabere maka imepụta APD, na-abụkarị ihe semiconductor etinyebere na mkpụrụ site na teknụzụ uto epitaxial. Ihe ndị a na-ejikarị eme ihe gụnyere silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), wdg, nwere ezigbo fotoelectric. The APD photodetector bụ ụdị pụrụ iche nke fotodetector nke na-eji avalanche photoelectric mmetụta welie akara ngosi. Mgbe foton mere na APD, a na-emepụta ụzọ abụọ electron-hole. Mmụba nke ndị na-ebu ndị a n'okpuru ọrụ nke ọkụ eletrik nwere ike iduga n'ịmepụta ndị ọzọ na-ebu, "mmetụta oke mmiri", nke na-eme ka mmepụta ihe dị ugbu a dịkwuo elu.
Epitaxial wafers nke MOCvD toro bụ ihe na-elekwasị anya na ngwa diode fotodetection nke oke oke mmiri. Ejiri U-InGaAs ihe nwere doping ndabere <5E14 kwadoro oyi akwa mmịpụta. Ihe oyi akwa na-arụ ọrụ nwere ike iji InP ma ọ bụ InAlAslayer. InP epitaxial substrate bụ ihe bụ isi maka imepụta APD, nke na-ekpebi arụmọrụ nke ihe nchọpụta anya. APD photodetector bụ ụdị fotodetector nwere mmetụta dị elu, nke a na-ejikarị na nzikọrịta ozi, nghọta na mpaghara onyonyo.

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Isi ihe dị na mpempe akwụkwọ laser Epitaxial InP gụnyere

1. Band ọdịiche e ji mara: InP nwere warara gbalaga ọdịiche, nke kwesịrị ekwesị maka ogologo-efegharị efegharị infrared ìhè nchọpụta, karịsịa na wavelength nso nke 1.3μm ka 1.5μm.
2. Ọrụ anya: InP epitaxial film nwere ezigbo ọrụ anya, dị ka ike ọkụ na mpụta quantum arụmọrụ na dị iche iche wavelengths. Dịka ọmụmaatụ, na 480 nm, ike na-egbuke egbuke na arụ ọrụ nke mpụga bụ 11.2% na 98.8%, n'otu n'otu.
3. Ihe na-ebu ibu: InP nanoparticles (NPs) na-egosipụta àgwà ire ere okpukpu abụọ n'oge uto epitaxial. A na-ekwu na oge ire ere ngwa ngwa bụ ịgbanye ndị na-ebu ibu n'ime oyi akwa InGaAs, ebe oge ire ere ngwa ngwa na-ejikọta ya na nchikota ụgbọelu na InP NP.
4. Ụdị okpomọkụ dị elu: AlGaInAs / InP quantum well material nwere arụmọrụ dị mma na okpomọkụ dị elu, nke nwere ike igbochi nkwụsị iyi nke ọma ma melite àgwà okpomọkụ dị elu nke laser.
5. Usoro mmepụta: InP epitaxial sheets na-etolitekarị na mkpụrụ site na molecular beam epitaxy (MBE) ma ọ bụ metal-organic chemical vapor deposition (MOCVD) teknụzụ iji nweta ihe nkiri dị elu.
Njirimara ndị a na-eme ka InP laser epitaxial wafers nwere ngwa dị mkpa na nkwurịta okwu fiber optic, nkesa igodo quantum na nchọpụta anya anya.

Ngwa ndị bụ isi nke InP laser epitaxial tablet gụnyere

1. Photonics: A na-eji lasers InP na ndị na-achọpụta ihe n'ọtụtụ ebe na nkwukọrịta anya, ebe data, imaging infrared, biometrics, 3D sensing na LiDAR.

2. Nzikọrịta ozi: Ihe InP nwere ngwa dị mkpa na ntinye aka dị ukwuu nke lasers ogologo ogologo ogologo nke silicon, karịsịa na nkwukọrịta eriri anya.

3. Infrared lasers: Ngwa nke InP-based quantum well lasers na etiti infrared band (dị ka 4-38 microns), gụnyere gas sensing, ihe mgbawa nchọpụta na infrared imaging.

4. Silicon photonics: Site na teknụzụ njikọta dị iche iche, a na-ebufe laser InP na mkpụrụ sitere na silicon iji mepụta ikpo okwu njikọta optoelectronic multifunctional silicon optoelectronic.

5.High arụmọrụ laser: A na-eji ihe InP na-emepụta lasers dị elu, dị ka InGaAsP-InP transistor lasers na ogologo nke 1.5 microns.

XKH na-enye wafers Epitaxial InP ahaziri ahazi na akụkụ dị iche iche na ọkpụrụkpụ, na-ekpuchi ngwa dị iche iche dị ka nkwukọrịta anya, sensọ, ọdụ ọdụ 4G / 5G, wdg. A na-arụpụta ngwaahịa XKH site na iji ngwa MOCVD dị elu iji hụ na arụmọrụ dị elu na ntụkwasị obi. N'ihe gbasara logistics, XKH nwere ọtụtụ ụzọ isi iyi mba ụwa, nwere ike ijikwa ọnụ ọgụgụ nke iwu na-agbanwe agbanwe, ma nye ọrụ ndị bara uru dị ka thinning, nkewa, wdg. àgwà na oge nnyefe. Mgbe mbata, ndị ahịa nwere ike nweta nkwado teknụzụ zuru oke na ọrụ ire ere iji hụ na etinyere ngwaahịa ahụ nke ọma.